Abstract: A method for forming a high electron mobility transistor includes the steps of forming an epitaxial stack on a substrate, forming a gate structure on the epitaxial stack, forming an insulating layer covering the epitaxial stack and the gate structure, forming a passivation layer on the insulating layer, forming an opening on the gate structure and through the passivation layer to expose the insulating layer, and removing a portion of the insulating layer through the opening to form an air gap between the gate structure and the passivation layer.

Abstract: An intelligent window allowing ventilation has an outer frame, a sliding frame, an upper locking rod, a lower locking rod, a driving module, a power supply module, and a switch assembly. The sliding frame is slidably mounted in the outer frame. The switch assembly controls the driving module to selectively drive the upper locking rod and the lower locking rod to two locking positions respectively, two ventilation positions respectively or two unlocking positions respectively. Since no handle is needed, an appearance of the intelligent window is neat and scenery outside the intelligent window would not be sheltered. In addition, by actuating the switch module to electrically drive the upper locking rod and the lower locking rod, a user is able to switch the intelligent window to a locked state, a ventilation state or a unlocked state. It is labor-saving and simple in operation.

Abstract: A data storage device includes a substrate including a number of contact pads and a number of passive component packages coupled to the contact pads. The data storage device further includes a memory controller coupled to the substrate, and one or more NAND die stacks coupled to the substrate and in electrical communication with the memory controller. One or more of the passive component packages include a first passive component, a second passive component electrically connected to the first passive component, and a first terminal coupled to the first passive component. The passive component packages further include a second terminal coupled to the second passive component, and a third terminal coupled to a common node of the first passive component and the second passive component.

Abstract: The present disclosure provides novel compounds, methods, and cell targeting mRNA vaccine formulations for targeted delivery, such as delivery to dendritic cells. The compound and formulation provided herein are designed to have a targeting moiety configured to provide selective delivery features specific for dendritic cells and a lipid tail for incorporated into the bilayer membrane of the formed lipid nanoparticle.

Abstract: A path preference determining method includes obtaining, by a first terminal, first information; and determining, by the first terminal, a path preference of a target application according to the first information.

Abstract: The present disclosure relates to novel compounds, methods, and cell-targeting formulations, e.g., a lipid nanoparticle (LNP) for targeted delivery to a tissue or a cell type. The compound and formulation provided herein are designed to have a targeting moiety configured to provide selective delivery features for the formulation and a lipid tail for being incorporated into the bilayer membrane of the formed lipid nanoparticle.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A membrane probe card includes probes each having a base electrically connected with a trace of a membrane wiring structure, and a probe tip protruding from the base. The base has a tip placement section and an extension section, which extend from a first side edge to a second side edge of the base in order. The probe tip is made by laser processing and electroplating, located at the tip placement section, and provided with a fixed end portion connected with the base in a way that the width of the tip placement section is greater than the width of the fixed end portion. A distance from a center of the probe tip to the first side edge is less than a distance from the center of the probe tip to the second side edge. As such, requirements of fine pitch and probe height may be achieved.

Abstract: An object detection system includes a projector that projects an original transmitted light on a scene containing an object; an adjustable device configured to shape the original transmitted light, thereby generating a shaped transmitted light; and an image capture device configured to capture an image from a reflected light from the scene. The original transmitted light is alternated with the shaped transmitted light, thereby resulting in an integrated image captured by the image capture device.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and the gate structure, and an air gap between the passivation layer and the gate structure. The gate structure includes a semiconductor gate layer and a metal gate layer on the semiconductor gate layer. The air gap is in direct contact with a sidewall of the passivation layer, a sidewall of the metal gate layer, a sidewall and a top surface of the semiconductor gate layer.

Abstract: Account delegation is provided. A request for access to a secure system using an owner's account is received from an applier via a browser supplement module on the applier's computing device. The request is communicated to the account owner via a browser supplement module on the account owner's computing device. Approval of the request is received from the account owner. The secure system is logged into using the account owner's credential. A connection to the applier's computing device is established to act as a proxy for communication between the secure system and the applier's computing device. Further provided herein are a computer system and a computer program product for performing the method.

Abstract: When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.

Abstract: An RSC determining method, a terminal, and a network side device are provided. The RSC determining method according to embodiments of this application includes: A terminal receives first policy information sent by a network side device, where the first policy information is used to indicate a target RSC; and the terminal determines the target RSC based on the first policy information.

Abstract: A multi-functional reconfigurable intelligence surface (MF-RIS) integrating signal reflection, refraction and amplification and energy harvesting and an application thereof are provided. The MF-RIS can support wireless signal reflection, refraction and amplification and energy harvesting on one surface, to amplify, reflect, or refract a signal through harvested energy, and further enhance effective coverage of wireless signals. When a signal model of the MF-RIS constructed in the present disclosure is applied to a multi-user wireless network, a non-convex optimization problem of jointly designing operation modes and parameters that include BS transmit beamforming, and different components and a deployment position of the MF-RIS is constructed with an objective of maximizing a sum rate (SR) of a plurality of users in an MF-RIS-assisted non-orthogonal multiple access network.

Abstract: Provided is a verification phantom. The verification phantom is provided with a slot for holding a film, wherein the slot includes a first slot and a second slot; an opening of the first slot and an opening of the second slot are both disposed on a first outer surface of the verification phantom; and an extraction groove is disposed at a junction, on the first outer surface, of the opening of the first slot and the opening of the second slot.

Abstract: A phase-change material switch may include a first interconnect-level dielectric, a heat spreader formed within the first interconnect-level dielectric, a second interconnect-level dielectric formed over the heat spreader, a phase change material element formed in or over the second interconnect-level dielectric, a first electrode and a second electrode in electrically conductive contact with the phase change material element, and a heating element coupled to the phase change material element and configured to supply a heat pulse to the phase change material element. The heat spreader may be located proximate to a first one of the phase change material element and the heating element, and the heat spreader may be smaller than the phase change material element. The heat spreader may be form using materials and processes similar to those used to form electrical interconnects, but unlike electrical interconnects, the heat spreader may be electrically isolated from electrical interconnects.

Abstract: A method includes forming a first portion of a spacer layer over a first fin and a second portion of the spacer layer over a second fin, performing a first etching process to recess the first portion of the spacer layer with respect to the second portion of the spacer layer to form first spacers on sidewalls of the first fin, subsequently performing a second etching process to recess the second portion of the spacer layer with respect to the first spacers to form second spacers on sidewalls of the second fin, where the second spacers are formed to a height greater than that of the first spacers, and forming a first epitaxial source/drain feature and a second epitaxial source/drain feature between the first spacers and the second spacers, respectively, where the first epitaxial source/drain feature is larger than that of the second epitaxial source/drain feature.

Abstract: The present disclosure relates to the technical field of computers, and relates to an image processing method and apparatus, and a computer readable storage medium.

Abstract: A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and covering the gate structure, and an air gap between the passivation layer and the gate structure.