Abstract: There is provided a bottom cover for being covered on an optical system. The bottom cover is attached in front of the optical engine. The bottom cover has a bottom surface for facing a working surface when the optical system is moving on the working surface, a first opening for emission light of the optical engine to go through and a second opening for reflected light from the working surface to go through. The bottom cover is further formed with guiding protrusions protruded out from the bottom surface toward the working surface and surrounding at least the second opening to guide soft materials on the working surface to away from the second opening.

Abstract: A duty cycle control circuit generates a duty cycle control signal for controlling the duty cycle of a DC-DC buck conversion signal. The duty cycle control circuit includes: a dual ramp generator for generating a first ramp signal and a second ramp signal having the same frequency and different phases; a first comparator for comparing the first ramp signal with a feedback signal to generate a first control signal; a second comparator for comparing the second ramp signal with the feedback signal to generate a second control signal; and a logical circuit for performing a first predetermined logical operation according to the first control signal and a first conduction-control signal to generate a first part of the duty cycle control signal, and performing a second predetermined logical operation according to the second control signal and a second conduction-control signal to generate a second part of the duty cycle control signal.

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Abstract: A semiconductor package includes a first package having a first side and a second side opposing the first side. The first package comprises a first electronic component and a second electronic component arranged in a side-by-side manner on the second side. A second package is mounted on the first side of the first package. The second package comprises a radiative antenna element. A connector is disposed on the second side.

Abstract: A visualization method for evaluating brain addiction traits, an apparatus, and a computer-readable storage medium are provided. The method includes the following. A visualization processing request is received from a client, where the visual processing request contains an image to-be-processed. The image to-be-processed is masked to obtain a perturbation image masked. The perturbation image is classified with a visualization processing model to obtain a classification result, and the classification result is calculated to obtain an evaluation value of the perturbation image, where the evaluation value of the perturbation image is less than an evaluation value of the image to-be-processed without masking. The visualization evaluation result is determined according to the evaluation value of the perturbation image. The visualization evaluation result is sent to the client.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.

Abstract: An automatic locking device for assembling a part to a workpiece is provided. The device includes a feeding mechanism, a fixture mechanism, a loading and unloading mechanism, a lifting mechanism, a rotating mechanism, and a locking mechanism. The feeding mechanism feeds the part to the fixture mechanism. The loading and unloading mechanism places the workpiece on the part. The lifting mechanism lifts up the fixture mechanism together with the part and the workpiece. The rotating mechanism rotates the fixture mechanism. The locking mechanism locks the part to the workpiece after the part and the workpiece are rotated by the rotating mechanism. The automatic locking device integrates multiple functions in a single station, reduces the number of the work stations and operatives, lowers the cost, and improves accuracy of the assembly. An assembling apparatus including the automatic locking device is also provided.

Abstract: Automatic process generation and recommendation can include extracting, in real time, features from user input to a computer. The features extracted can be compared with recorded features corresponding to a prior behavior. A user-intended action can be predicted in response to a match between the features extracted and the features corresponding to the prior behavior. A sequence of processor-executable actions corresponding to the prior behavior can be generated.

Abstract: A photolithographic apparatus includes a particle removing cassette, a pump and a compressor. The particle removing cassette includes a first slit that includes an array of parallel wind blade nozzles arranged along a length of the first slit, protruding from the first slit, and configured to eject and direct pressurized cleaning material to a patterning surface of a mask to remove debris particles on the patterning surface. The pump and the compressor are controlled by a controller to adjust a flow rate and a pressure of the pressurized cleaning material based on an amount of debris particles on the patterning surface of the mask.

Abstract: An electric curtain includes an upper beam, two curtain ropes, a curtain body and a lower beam. The upper beam includes a rotating shaft, a pivotal member, two rope winders, a controller and a wireless control unit installed inside the controller. The wireless control unit has the technical feature of receiving and matching with a wireless transmission communication protocol originated from the external, thereby allowing the electric curtain to achieve the effect of establishing the most optimal electrical conduction and wireless communication transmission between the two based on the external wireless transmission communication protocol selected and matched.

Abstract: A swirl structure-based exhaust aftertreatment device for an underground mining diesel vehicle comprises a water tank, a PM collection tank, an inlet tube, a high-speed rotary exhaust separator, an exhaust catalytic converter, a circulating NOx selective catalytic reduction system and an exhaust tube. The high-speed rotary exhaust separator comprises a Laval tube, a throat tube, a swirl tube and a first deposition tube. The concentration of toxic and harmful components in exhaust can be decreased below a concentration threshold, thus avoiding pipeline blockage caused by PM accumulation.

Abstract: A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.

Abstract: A wireless earpiece having no venting port extending from the interior of the earpiece housing to external to the housing on the side of the housing towards the earpiece wearer's ear. The earpiece has a housing defining a front cavity and a back cavity, the front cavity proximate a wearer's ear when the earpiece is positioned in the wearer's ear during use and the back cavity away from the wearer's ear when the earpiece is positioned in the wearer's ear. The earpiece has an audio output nozzle extending from the front cavity configured to extend at least partially within the wearer's ear. In some designs, the earpiece has no vent extending through the housing toward the wearer's ear when the earpiece is positioned in the wearer's ear, but may have a vent extending through the housing away from the wearer's ear when the earpiece is positioned in the wearer's ear.

Abstract: A semiconductor package structure includes a first redistribution layer, a first semiconductor die, a second semiconductor die, a bridge structure, and a plurality of conductive bumps. The first semiconductor die and the second semiconductor die are disposed over the first redistribution layer. The bridge structure is disposed under the first redistribution layer. The first semiconductor die is electrically coupled to the second semiconductor die through the first redistribution layer and the bridge structure. The conductive bumps are disposed under the first redistribution layer and are coupled to the first redistribution layer. The bridge structure is disposed between at least two of the conductive bumps.

Abstract: A semiconductor device includes a bottom electrode, a top electrode, a sidewall spacer, and a data storage element. The sidewall spacer is disposed aside the top electrode. The data storage element is located between the bottom electrode and the top electrode, and includes a ferroelectric material. The data storage element has a peripheral region which is disposed beneath the sidewall spacer and which has at least 60% of ferroelectric phase. A method for manufacturing the semiconductor device and a method for transforming a non-ferroelectric phase of a ferroelectric material to a ferroelectric phase are also disclosed.

Abstract: A camera module includes an imaging lens assembly, an image sensor and an optical plate. The image sensor is disposed on an image surface of the imaging lens assembly. The optical plate is disposed between the imaging lens assembly and the image sensor, and includes a substrate and at least one anti-reflection layer. The substrate has an object-side surface and an image-side surface, the object-side surface faces towards an object side, the image-side surface faces towards an image side, and the object-side surface is parallel with the image-side surface. The at least one anti-reflection layer is disposed on the object-side surface or the image-side surface of the substrate, the anti-reflection layer includes a nanocrystal structure layer and an optical-connecting layer, wherein the nanocrystal structure layer includes a metal oxide crystal, the optical-connecting layer connects the substrate and the nanocrystal structure layer.