Abstract: Embodiments of the present disclosure relate to a SRAM (static random access memory) bit cell. More particularly, embodiments of the present disclosure relate to a single port, 8T SRAM cell with write enhance pass gate transistors. Particularly, two write enhance pass gate transistors are parallelly connected with the pass gate transistors in a standard 6T SRAM cell. The write enhance pass gate transistors are independently controlled from the pass gate transistor using a write enhance word line. In some embodiments, the single port, 8T SRAM cell according to the present disclosure may be implemented by stacked complementary FETs. Empty or dummy PMOS transistors in a standard 6T stacked CFET SRAM cell are used as pass gate transistors or write enhance pass gate transistors.

Abstract: A membrane for a closed system transfer device including a material having 40-50% styrenic block copolymer, 0-10% polypropylene, and 45-60% by weight of mineral oil. The membrane may be utilized in any component of a closed system transfer device or system, such as a syringe adapter, patient connector, vial adapter, IV bag spike, etc. The membrane may also be utilized in scenarios where the cannula of the syringe adapter punctures the membrane and remains in the punctured position for an extended period of time, such as one hour or greater.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A semiconductor device having improved leakage current characteristics includes a semiconductor substrate with first and second nitride-based semiconductor layers so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region. A doped III-V nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer. The doped layer has a substantially inverted trapezoidal cross-sectional shape with a longer inverted trapezoid base as an upper surface of the doped III-V nitride-based semiconductor layer and a width of the cross-sectional shape decreasing as the distance away from the upper surface increases. A gate electrode is disposed on or above the doped III-V semiconductor layer and positioned on or above the longer inverted trapezoid base. At least two source/drain (S/D) electrodes are disposed over the second nitride-based semiconductor layer.

Abstract: A pressure sensor includes a substrate, a pressure sensing element, a first signal line, a second signal line, an elastomer, and an opposite substrate. The pressure sensing element includes a first resistor and a second resistor connected in series, a third resistor and a fourth resistor connected in series, a first switch component, and a second switch component. The first and the second resistor are connected in parallel to the third and the fourth resistor. The first switch component is electrically connected between the first and the second resistor. The second switch component is electrically connected between the third and the fourth resistor. The first signal line is electrically connected between the first and the fourth resistor. The second signal line is electrically connected between the second and the third resistor. The elastomer includes a cavity. The first resistor to the fourth resistor overlap with the cavity.

Abstract: An antenna system includes a first antenna element and a second antenna element. The first antenna element includes a first ground element, a first radiation element, a second radiation element, and a third radiation element. The first radiation element has a first feeding point. The second radiation element is coupled to the first ground element. The third radiation element is coupled to the first ground element. The third radiation element is adjacent to the first radiation element and the second radiation element. The second antenna element includes a second ground element, a fourth radiation element, a fifth radiation element, and a sixth radiation element. The fourth radiation element has a second feeding point. The fifth radiation element is adjacent to the fourth radiation element. The fifth radiation element is coupled through the sixth radiation element to the second ground element.

Abstract: A seat belt locking buckle may include a locking buckle and a buckle clip. The locking buckle has a connecting hole at one end to be inserted by the buckle clip; the locking buckle is pivotally connected to a pulling member which is adapted to engage with and secure the buckle clip, and the buckle clip comprises a first penetrated portion at one end, and an elongated tongue portion at the other end to form a horizontal T-shape. Two sides of the tongue are non-parallel to form two sloping edges respectively, and two sloping edges taper gradually from the first penetrated portion toward the end of the tongue to form the tongue in tapered shape, and a hook hole is formed on the narrow end of the tongue to fasten the pulling member thereon.

Abstract: A radiography diagnosis device includes a casing having an opening, a first shielding structure, a dose measuring unit, a transmission-type X-ray source module, and an image receiving assembly. The first shielding structure is disposed in the casing and forms a shielded space located between the transmission-type X-ray source module and the image receiving assembly and corresponding to the opening. An object to be detected is adapted to enter the shielded space through the opening. The transmission-type X-ray source module is disposed in the casing and adapted to provide an X-ray toward the object to be detected in the shielded space. The image receiving assembly is disposed in the casing. During image capturing, the X-ray generated by the transmission-type X-ray source module is received by the dose measuring unit, and the image receiving assembly receives the X-ray passing through the object to be detected at the same time.

Abstract: A method is provided and includes several operations: arranging multiple channels extending in a first direction; arranging, in accordance with multiple weights of multiple macros, a first portion of the macro closer to a centroid of a core region of an integrated circuit than a second portion of the macros; and arranging the macros on opposite sides of the channels. The macros have multiple pins coupled to the channels interposed between the macros.

Abstract: An antenna system includes a first antenna element and a second antenna element. The first antenna element includes a first ground element, a first radiation element, a second radiation element, and a third radiation element. The first radiation element has a first feeding point. The second radiation element is coupled to the first ground element. The third radiation element is coupled to the first ground element. The third radiation element is adjacent to the first radiation element and the second radiation element. The second antenna element includes a second ground element, a fourth radiation element, a fifth radiation element, and a sixth radiation element. The fourth radiation element has a second feeding point. The fifth radiation element is adjacent to the fourth radiation element. The fifth radiation element is coupled through the sixth radiation element to the second ground element.

Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.

Abstract: A method is provided and includes several operations: forming a first group of macros in a first region, wherein the first group of macros are aligned with a first boundary of a channel that is coupled thereto through pins of the first group of macros; forming a second group of macros in the first region to align with a second boundary of the channel that is coupled thereto through pins of the second group of macros, wherein the first and second groups of macros are coupled to a first register; and forming a third group of macros in a second region different from the first region. A first macro and a second macro that are in the third group of macros are aligned with the first and second boundaries respectively. The third group of macros are coupled to a second register different from the first register.

Abstract: A semiconductor device includes a substrate, a first and a second nitride-based semiconductor layers, a doped nitride-based semiconductor layer, a gate electrode, a first and a second dielectric protection layers. The second nitride-based semiconductor layer has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The first and the second dielectric protection layers include oxygen. The first dielectric protection layer is conformal with a profile collectively constructed by the gate electrode, the doped nitride-based semiconductor layer, and the second nitride-based semiconductor layer. The second dielectric protection layer is in contact with the first dielectric protection layer. The first dielectric protection layer has an oxygen concentration less than that of the second dielectric protection layer.

Abstract: An integrated circuit device includes a digitally controlled oscillator (DCO), two charge-sharing capacitors, two charge-sharing switches, two pre-charge switches, and two DACs. The DCO has a first inverter and a second inverter. A first charge-sharing capacitor has a first terminal coupled to an input terminal of the first inverter through a first charge-sharing switch. A first DAC has an output terminal coupled to the first terminal of the first charge-sharing capacitor through a first pre-charge switch. A second charge-sharing capacitor has a first terminal coupled to an input terminal or an output terminal of the second inverter through a second charge-sharing switch. A second DAC has an output terminal coupled to the first terminal of the second charge-sharing capacitor through a second pre-charge switch.

Abstract: A method of forming a semiconductor device is provided. The method includes placing a semiconductor die and a leadframe on a carrier substrate. The semiconductor die includes a plurality of bond pads and the leadframe includes a plurality of leads. A first lead of the plurality of leads has a proximal end affixed to a first bond pad of the plurality of bond pads and a distal end placed on the carrier substrate. At least a portion of the semiconductor die and the leadframe is encapsulated with an encapsulant. The carrier substrate is separated from a first major side of the encapsulated semiconductor die and leadframe exposing a distal end portion of the first lead. A package substrate is applied on the first major side.

Abstract: A method of tracking immune cells to detect immune response. The method including steps of identifying a patient having a disease associated with an organ; administering biocompatible magnetic nanoparticles into the blood stream of the patient; and obtaining a magnetic resonance image of the organ. The presence of hyperintense or hypointense spots in the magnetic resonance image indicates immune response in the patient.

Abstract: A method is provided and includes several operations: arranging multiple channels extending in a first direction; arranging, in accordance with multiple weights of multiple macros, a first portion of the macro closer to a centroid of a core region of an integrated circuit than a second portion of the macros; and arranging the macros on opposite sides of the channels. The macros have multiple pins coupled to the channels interposed between the macros.

Abstract: A method includes receiving a semiconductor substrate. The semiconductor substrate has a top surface and includes a semiconductor element. Moreover, the semiconductor substrate has a fin structure formed thereon. The method also includes recessing the fin structure to form source/drain trenches, forming a first dielectric layer over the recessed fin structure in the source/drain trenches, implanting a dopant element into a portion of the fin structure beneath a bottom surface of the source/drain trenches to form an amorphous semiconductor layer, forming a second dielectric layer over the recessed fin structure in the source/drain trenches, annealing the semiconductor substrate, and removing the first and second dielectric layers. After the annealing and the removing steps, the method further includes further recessing the recessed fin structure to provide a top surface. Additionally, the method includes forming an epitaxial layer from and on the top surface.

Abstract: A multi-point buckle has a buckle, at least two latches and a plurality of dust jackets. The buckle has a plurality of tongue slots on a peripheral edge. Each of the latches has at least two tongues, and each tongue is capable of being inserted into one of the tongue slots of the buckle for locking. Each dust jacket has a through slot through two opposite ends for accepting one of the tongues. One of the two opposite ends of the dust jacket is a first abutting end, the first abutting end abutting an edge of the buckle when the one of the tongues and a corresponding tongue slot are locked together, and the first abutting end has a loop lip around an opening of the through slot for filling in between the tongue and the tongue slot and prevent dust from entering.