Abstract: Described herein are modified thermoplastic polyurethanes, methods of reactively extruding the modified thermoplastic polyurethanes, and methods of using the modified thermoplastic polyurethanes. The modified thermoplastic polyurethanes are micro-crosslinked through reaction with a functional polyolefin, have significantly improved tensile strength and elongation compared to unmodified thermoplastic polyurethanes, and may be extruded.

Abstract: Five-side mold protection for semiconductor packages is described. In an illustrative, non-limiting embodiment, a semiconductor package may include: a substrate comprising a top surface, a bottom surface, and four sidewalls; an electrical component comprising a backside and a frontside, where the frontside of the electrical component is coupled to the top surface of the substrate; and a molding compound, where the molding compound encapsulates the backside of the electrical component and the four sidewalls of the substrate.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: An integrated circuit device includes a digitally controlled oscillator (DCO), two charge-sharing capacitors, two charge-sharing switches, two pre-charge switches, and two DACs. The DCO has a first inverter and a second inverter. A first charge-sharing capacitor has a first terminal coupled to an input terminal of the first inverter through a first charge-sharing switch. A first DAC has an output terminal coupled to the first terminal of the first charge-sharing capacitor through a first pre-charge switch. A second charge-sharing capacitor has a first terminal coupled to an input terminal or an output terminal of the second inverter through a second charge-sharing switch. A second DAC has an output terminal coupled to the first terminal of the second charge-sharing capacitor through a second pre-charge switch.

Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall. The structure also includes a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure further includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.

Abstract: The present invention provides a probing system, which utilizes a suction nozzle to suck a wafer in probing. A relative distance between the suction nozzle and the probes can be adjusted according the conditions of the probing system, so the system extends the usage life.

Abstract: Described herein are modified thermoplastic polyurethanes, methods of reactively extruding the modified thermoplastic polyurethanes, and methods of using the modified thermoplastic polyurethanes. The modified thermoplastic polyurethanes are mi-cro-crosslinked through reaction with a functional polyolefin, have significantly improved tensile strength and elongation compared to unmodified thermoplastic polyurethanes, and may be extruded.

Abstract: A testing substrate includes a substrate and a first build-up structure. The substrate has a first surface and a second surface opposite to each other. The substrate includes a first conductive pattern. The first conductive pattern includes a plurality of conductive connectors, and each conductive connector penetrates the substrate from the first surface to the second surface of the substrate. The first build-up structure is arranged on the first surface. The first build-up structure has a second conductive pattern. The first conductive pattern is electrically connected to the second conductive pattern, and the size of the first conductive pattern is larger than or equal to the size of the second conductive pattern. A manufacturing method of the testing substrate and a probe card are also provided.

Abstract: The present invention relates to silicon-based powders and a method for producing the silicon-based powders. The method for producing the silicon-based powders includes a hydrolysis step of a silicon precursor having an alkoxy group, a condensation step and a drying step. By a specific weight ratio of water to the silicon precursor having the alkoxy group and a silicon precursor having a secondary amino group and an alkyl group, in the method for producing the silicon-based powders, the condensation step can be performed without organic solvents, and a modification on silicon-based gels can be performed to enhance a safety of processes and a hydrophobicity of the resulted silicon-based powders, and decrease a thermal conductivity and a bulk density of the resulted silicon-based powders.

Abstract: The present invention provides a probe card. A module cap, on the probe card substrate, is designed to have a chute and the probe module can be installed on or uninstalled from the module cap via the chute. That simplifies the operations of assembling and disassembling the probe card and avoids positioning error.

Abstract: The present invention relates to a fiber composite material and a method for producing the fiber composite material. The method for producing the fiber composite material includes a hydrolysis step of a silicon precursor having an alkoxy group, an in-situ condensation step and a drying step. A specific silicon precursor having a secondary amino group and alkyl groups is used therein, as well as a specific weight ratio of the silicon precursor to a fiber material, the in-situ condensation step can be performed in the absence of organic solvents in the method for producing the fiber composite material, and a hydrophobic modification on silicon-based gels can be performed, thereby simplifying the process, decreasing a thermal conductivity of the resulted fiber composite material and preventing drop dust of the resulted fiber composite material.

Abstract: An electronic device is provided, including a housing, a first slot, a second slot, and a circuit board. The first and second slots are formed on the housing and spaced apart from each other. The circuit board is disposed in the housing and includes a first antenna structure and a second antenna structure. The first antenna structure has a Z-shaped conductive body, and the second antenna structure includes a microstrip portion and a base portion. The base portion is electrically connected to the conductive body, and the microstrip portion is spaced apart from the base portion.

Abstract: A safety belt buckle includes a buckle body, a plurality of latch plates, and a dustproof cover. The buckle body includes a base having a plurality of insertion slots. The dustproof cover is mounted on the base and has a plurality of passages. Each of the latch plates has a locking portion inserted through one of the passages of the dustproof cover into one of the insertion slots of the base. The locking portion has a clamping section arranged between each of the latch plates and the base. The clamping section of each of the latch plates seals one of the passages of the dustproof cover and stops one of the insertion slots of the base. The locking portion of each of the latch plates is clamped by one of the passages of the dustproof cover.

Abstract: A safety belt latch assembly includes an adjusting section, a snap-fit piece, and a strap winding bar. The adjusting section is provided with an opening and two side plates. Each of the side plates of the adjusting section is provided with an elongate slot. The snap-fit piece has a first end provided with a torsion portion twisted from the adjusting section, with a torsion angle of ninety degrees (90°) being defined between the snap-fit piece and the adjusting section. The snap-fit piece has a second end provided with a fastening portion having a fastening hole. The strap winding bar is provided with two contact portions. Each of the contact portions of the strap winding bar is inserted into the elongate slot of one of the side plates of the adjusting section.

Abstract: An injection device is disclosed herein. The injection device is utilized to inject a liquid onto a test area of a semiconductor element. The injection device includes a base, a reservoir, a first testing pipe, a cleaning pipe and a liquid-draining pipe. The reservoir set on the base is provided with at least one connecting port and a dropping port, wherein the dropping port is against the test area of the semiconductor element. The first testing pipe, the cleaning pipe and the liquid-draining pipe are connected to at least one connecting port, wherein a first liquid is injected from the first testing pipe into the reservoir, and wherein the a cleaning liquid is injected from the cleaning pipe into the reservoir to clean the reservoir and the test area. The dropping port is utilized to drain off the first testing liquid and the cleaning liquid in the reservoir. A semiconductor testing system utilizing the injection device and its testing method are also provided herein.

Abstract: A safety belt buckle includes a buckle body, a plurality of latch plates, and a dustproof cover. The buckle body includes a base having a plurality of insertion slots. The dustproof cover is mounted on the base and has a plurality of passages. Each of the latch plates has a locking portion inserted through one of the passages of the dustproof cover into one of the insertion slots of the base. The locking portion has a clamping section arranged between each of the latch plates and the base. The clamping section of each of the latch plates seals one of the passages of the dustproof cover and stops one of the insertion slots of the base. The locking portion of each of the latch plates is clamped by one of the passages of the dustproof cover.

Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall, and a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: An electronic device is provided, including a housing, a first slot, a second slot, and a circuit board. The first and second slots are formed on the housing and spaced apart from each other. The circuit board is disposed in the housing and includes a first antenna structure and a second antenna structure. The first antenna structure has a Z-shaped conductive body, and the second antenna structure includes a microstrip portion and a base portion. The base portion is electrically connected to the conductive body, and the microstrip portion is spaced apart from the base portion.

Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.