Abstract: Disclosed are a cathode active material for sodium-ion batteries and a preparation method therefor and an application thereof. The cathode active material has a chemical formula of NaxNiyFezMngMhAmO2, where M is selected from the group consisting of Ti, Al, Mg, Ca, Zr, Y, Zn, Nb, W and combinations thereof, A is selected from the group consisting of B, P, C and combinations thereof, 0.80?x?1.40, 0.05?y?0.95, 0.05?z?0.95, 0.05?g?0.95, 0.01?h?0.50, and 0.01?m?0.30. By adding M and A elements to the ternary iron-manganese-nickel cathode active material for sodium-ion batteries, and controlling the ratio of all elements, the present disclosure can achieve the formation of a perfect layered single-crystal structure of the cathode active material for sodium-ion batteries, with large particles, ultimately achieving the stability of the active material, and when used in sodium-ion batteries, it can significantly improve the cycling performance at high temperatures while ensuring high gram capacity.

Abstract: An embedded circuit board, made without gas bubbles or significant internal gaps according to a manufacturing method which is provided, includes an inner layer assembly, an embedded element, and first and second insulating elements. The inner layer assembly comprises a first main portion with opposing first and second surfaces and a first groove not extending to the second surface is positioned at the first surface. A first opening penetrates the second surface, and the first opening and the first groove are connected. The first groove carries electronic elements for embedment. The first insulating element covers the first surface and a surface of the embedded element away from the second surface. The second insulating element covers the second surface and extends into the first opening to be in contact with the embedded element.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes an interconnect structure overlying a semiconductor substrate and comprising a conductive wire. A passivation structure overlies the interconnect structure. An upper conductive structure overlies the passivation structure and comprises a first conductive layer, a dielectric layer, and a second conductive layer. The first conductive layer is disposed between the dielectric layer and the passivation structure. The second conductive layer extends along a top surface of the dielectric layer and penetrates through the first conductive layer and the passivation structure to the conductive wire.

Abstract: An apparatus for processing ultrasound scan data comprises a processor configured to obtain three-dimensional ultrasound scan data for a volume including a region of interest in a subject, the processor is further configured to: provide the three-dimensional ultrasound scan data for display to the user by providing for display to the user a first two-dimensional view of the region of interest in a predetermined direction such that the first two-dimensional view intersects the first boundary; and upon receiving, via the user interface, a user input indicating a location of the first boundary in the first two-dimensional view of the region of interest, generate a second two-dimensional view of the region of interest corresponding to the slice at the first boundary on basis of the indicated location, and providing for display to the user the second two-dimensional view of the region of interest.

Abstract: An approach for managing data set access based on data set relevance. The approach monitors data set access activities associated with a user. The approach detects access of a first data set by the user. The approach determines a group of data sets associated with the first data set based on a data set mapping associated with the user. The approach recalls one or more data sets of the group of data sets from a slower storage device to a faster storage device.

Abstract: Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a substrate, a bottom electrode disposed over the substrate, a top electrode disposed over the bottom electrode, and a phase change layer disposed between the top electrode and the bottom electrode. The phase change layer is a laminated structure comprising a first layer of phase change material and a second layer of phase change material alternatingly stacked, and the first layer of phase change material is chemically different from the second layer of phase change material, wherein the first layer of phase change material has a first thickness that is less than a second thickness of the second layer of phase change material.

Abstract: 1. Various embodiments of the present disclosure are directed towards a ferroelectric random-access memory (FeRAM) cell or some other suitable type of memory cell comprising a bottom-electrode interface structure. The memory cell further comprises a bottom electrode, a switching layer over the bottom electrode, and a top electrode over the switching layer. The bottom-electrode interface structure separates the bottom electrode and the switching layer from each other. Further, the interface structure is dielectric and is configured to block or otherwise resist metal atoms and/or impurities in the bottom electrode from diffusing to the switching layer. By blocking or otherwise resisting such diffusion, leakage current may be decreased. Further, endurance of the memory cell may be increased.

Abstract: The present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. One or more lower interconnects are disposed within a lower inter-level dielectric (ILD) structure over the substrate. A plasma induced damage (PID) mitigation layer is disposed over the lower ILD structure. The PID mitigation layer has a porous structure including a metal. A first upper interconnect is laterally surrounded by an upper ILD structure over the PID mitigation layer. The first upper interconnect extends from over the PID mitigation layer to the one or more lower interconnects.

Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric random-access memory (FeRAM) cell or some other suitable type of memory cell comprising a bottom-electrode interface structure. The memory cell further comprises a bottom electrode, a switching layer over the bottom electrode, and a top electrode over the switching layer. The bottom-electrode interface structure separates the bottom electrode and the switching layer from each other. Further, the interface structure is dielectric and is configured to block or otherwise resist metal atoms and/or impurities in the bottom electrode from diffusing to the switching layer. By blocking or otherwise resisting such diffusion, leakage current may be decreased. Further, endurance of the memory cell may be increased.

Abstract: An animated emoticon generation method, a computer-readable storage medium, and a computer device are provided. The method includes: displaying an emoticon input panel on a chat page; detecting whether a video shooting event is triggered in the emoticon input panel; acquiring video data in response to detecting the video shooting event; obtaining an edit operation for the video data; processing video frames in the video data according to the edit operation to synthesize an animated emoticon; and adding an emoticon thumbnail corresponding to the animated emoticon to the emoticon input panel, the emoticon thumbnail displaying the animated emoticon to be used as a message on the chat page based on a user selecting the emoticon thumbnail in the emoticon input panel.

Abstract: The disclosure discloses a percussion and cutting composite drilling tool, which relates to the field of drilling equipment and is mainly used to solve the problems of low working efficiency and high wear rate of drill bit existed in breaking rocks only by cutting effect. The main structure comprises a PDC drill bit and a percussion drill bit, which is characterized by a percussion structure directly connected to the percussion drill bit. The disclosure provides a percussion and cutting composite drilling tool, which is suitable for strata under different geological conditions and has higher construction efficiency and lower bit wear.

Abstract: A battery assembly includes a circuit board and a battery cell. The circuit board includes a first dielectric layer, a second dielectric layer, an adhesive film, a bus bar, a first copper block, a fuse, and a second copper block. The adhesive film is located between the first dielectric layer and the second dielectric layer and includes cavities. The first copper block and the bus bar are on the first dielectric layer. The second copper block and the fuse are on the second dielectric layer. The circuit board is divided into heat dissipation areas and bending areas which are connected and alternately arranged, the heat dissipation areas and the bending areas enclose a holding groove. The bus bar and the first block copper are accommodated in the holding groove. The battery cell is accommodated in the holding groove. A battery module and a manufacturing method are also disclosed.

Abstract: An animated emoticon generation method, a computer-readable storage medium, and a computer device are provided. The method includes: displaying an emoticon input panel on a chat page; detecting whether a video shooting event is triggered in the emoticon input panel; acquiring video data in response to detecting the video shooting event; obtaining an edit operation for the video data; processing video frames in the video data according to the edit operation to synthesize an animated emoticon; and adding an emoticon thumbnail corresponding to the animated emoticon to the emoticon input panel, the emoticon thumbnail displaying the animated emoticon to be used as a message on the chat page based on a user selecting the emoticon thumbnail in the emoticon input panel.

Abstract: The present disclosure relates an integrated chip structure. The integrated chip structure includes a bottom electrode disposed within a dielectric structure over a substrate. A top electrode is disposed within the dielectric structure over the bottom electrode. A switching layer and an ion source layer are between the bottom electrode and the top electrode. A barrier structure is between the bottom electrode and the top electrode. The barrier structure includes a metal nitride configured to mitigate a thermal diffusion of metal during a high temperature fabrication process.

Abstract: In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a wafer chuck configured to hold a substrate. Further, a bell jar structure is arranged over the wafer chuck such that an opening of the bell jar structure faces the wafer chuck. A plasma coil is arranged over the bell jar structure. An oxygen source coupled to the processing chamber and configured to input oxygen gas into the processing chamber.

Abstract: A lithium-replenishing additive is provided. The lithium-replenishing additive includes a lithium-rich-material core and a shell layer disposed at the lithium-rich-material core. The lithium-rich-material core is made of a lithium-rich material with an average chemical formula of aNixMyO2 ·bLi2O, where 0.95?x?1, 0.01?y?0.05, 1?z?1.15, 0.8?a?1.1, 0.8?b?1.1, and the M includes one or more of copper (Cu), cobalt (Co), aluminum (Al), titanium (Ti), vanadium (V), zirconium (Zr), or iron (Fe). The shell layer includes a polymer layer. A preparing method of a lithium-replenishing additive and a lithium secondary battery are further provided.

Abstract: A flexible circuit board includes two first wiring boards, a first adhesive, and a first conductive structure. Each of the two first wiring boards includes a first bent portion, and two first bent portions of the two wiring boards is connected to each other. The first adhesive layer is sandwiched between the two first bent portions. The first conductive structure penetrates the two first bent portions and the first adhesive layer and electrically connects the two first bent portions.

Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric random-access memory (FeRAM) cell or some other suitable type of memory cell comprising a bottom-electrode interface structure. The memory cell further comprises a bottom electrode, a switching layer over the bottom electrode, and a top electrode over the switching layer. The bottom-electrode interface structure separates the bottom electrode and the switching layer from each other. Further, the interface structure is dielectric and is configured to block or otherwise resist metal atoms and/or impurities in the bottom electrode from diffusing to the switching layer. By blocking or otherwise resisting such diffusion, leakage current may be decreased. Further, endurance of the memory cell may be increased.

Abstract: A method for manufacturing a flexible circuit board includes providing a first laminated structure, the first laminated structure including two first wiring boards, a first adhesive layer sandwiched between the two first wiring boards, and a first conductive structure. The first conductive structure penetrates the two first wiring boards and the first adhesive layer and electrically connects the two first wiring boards. The first adhesive layer defines a first opening, the first opening includes a first edge away from the first conductive structure. The first laminated structure is cut along the first edge and then the two first wiring boards are unfolded. A flexible circuit board manufactured by such method is also disclosed.

Abstract: Aspects of the invention include generating a plurality of predictions that each define a plurality of future inputs for a model. A deviation curve is generated by determining a distance between each prediction of the plurality of predictions and a respective known data point of a plurality of known data points. One or more points in the deviation curve are sampled and the sampled points are compared to a low threshold and a high threshold. A judgement is determined for each prediction to determine whether the respective prediction will be accepted or denied as an input to the model. The future inputs for the model are modified based on the judgments.