Abstract: An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode.

Abstract: An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Abstract: An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Abstract: A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.

Abstract: An electroacoustic transducer has a piezoelectric layer, which is structured in such a way that, in the case of an alternating electric field applied in one spatial direction, an oscillation mode with oscillations in three spatial directions is excited.

Abstract: A metallization can be used for components working with acoustic waves. The metallization includes a base having a bottom layer comprising titanium, and an upper layer comprising copper. A top layer of the metallization disposed on the base comprises aluminum.

Abstract: An electroacoustic filter has improved low-pass characteristics. The filter includes a first electroacoustic converter, an electroacoustic element and a grid structure between the converter and the element. The grid structure is acoustically active in one frequency range that lies above the acoustically active frequency range of the first electroacoustic converter.

Abstract: The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.

Abstract: An electroacoustic component includes a substrate configured to carry acoustic waves. The electroacoustic component can be a guided bulk acoustic wave (GBAW) device, for example. A structured electric conductive layer is arranged on the substrate and an electrically dielectric layer (for example, aluminum oxide) is also arranged over the substrate.

Abstract: A method for producing an electric component including a dielectric layer on a substrate, includes the method steps of applying a metallic layer to the substrate and oxidizing the metallic layer to form a dielectric layer, wherein at least one partial region of the metallic layer is fully oxidized through the entire thickness of the layer.

Abstract: A component that operates with acoustic waves includes a substrate including a piezoelectric material, a first electrode plane in which bottom electrode structures including an acoustically active bottom electrode are arranged directly on the substrate, and a top electrode arranged above the bottom electrode plane and which is electrically conductively connected to the bottom electrode structures, wherein excitation of the acoustic waves during operation of the component is effected exclusively or predominantly through the bottom electrode structures.

Abstract: The invention concerns a component (B) operating with acoustic waves, in which the reflection and excitation are largely decoupled. For this purpose, a component comprises a dielectric (DL) which is arranged between an electrode finger (EF) and a piezoelectric substrate (PSU) and at least partially overlaps the electrode finger.

Abstract: The present invention relates to an electroacoustic transducer which is arranged in an acoustic track (AS) and on a piezoelectric substrate (11) and which has two electrodes (1, 2) which are arranged on the substrate (11) and which have interengaging electrode fingers (3, 4) for exciting acoustic waves. The electrode fingers (3, 4) of an electrode (1, 2) are interconnected. The transducer also has means for increasing the mass occupation in a central excitation region (ZAB) which runs parallel to the acoustic track (AS), and the mass occupation in the central excitation region (ZAB) is higher than in an edge region (RB) which adjoins the central excitation region (ZAB) from both sides.

Abstract: An acoustic wave component includes a layer system having a piezoelectric layer and a first metal layer arranged on the piezoelectric layer, a first resonator having a first electrode in the first metal layer, where the first metal layer includes electrode structures periodically arranged in a direction of propagation of a wave through the acoustic wave component, and a second resonator coupled to the first resonator and electrically isolated from the first resonator. The layer system includes a waveguide for guiding a guided bulk acoustic wave in a lateral direction of the acoustic wave component.

Abstract: A rotating motion sensor includes at least one electroacoustic resonator to stimulate a surface acoustic wave. The at least one electroacoustic resonator is configured so that rotation of the at least one electroacoustic resonator about an axis of rotation causes a change in resonance frequency of the at least one electroacoustic resonator. The at least one electroacoustic resonator includes oscillating structures configured to oscillate in a first direction that is a direction of propagation of the surface acoustic wave and/or a second direction that is transverse to the direction of propagation of the surface acoustic wave.

Abstract: An electroacoustic transducer has reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area, inner edge areas flanking the central excitation area, outer edge areas flanking the inner edge areas, and areas of the busbar flanking the outer edge areas. The longitudinal speed of the areas can be set so that the excitation profile of a piston mode is obtained.

Abstract: A metallization can be used for components working with acoustic waves. The metallization includes a base having a bottom layer comprising titanium, and an upper layer comprising copper. A top layer of the metallization disposed on the base comprises aluminum.

Abstract: Guided bulk acoustic wave devices and method for manufacturing guided bulk acoustic wave devices are provided. A guided bulk acoustic wave device includes a resonator structure with a piezoelectric layer, an electrode layer for exciting guided bulk acoustic waves and a wave guide layer. The thickness of the piezoelectric layer is less than or equal to 50 ?m.

Abstract: An electroacoustic component includes a carrier substrate and a piezosubstrate having piezoelectric properties. The electroacoustic component also includes a layer system between the carrier substrate and the piezosubstrate.

Abstract: An electroacoustic component includes a substrate that includes a quartz single crystal. The quartz single crystal has a first Euler angle ?: ?5°???5°, a second Euler angle ?, and a third Euler angle ?. A contiguous region of the quartz single crystal has the following vertices Pi(?i, ?i): (23°, 20°), (60°, 17°), (110°, 30°), (105°, 42°), (60°, 30°), (23°, 25°).