Abstract: Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

Abstract: A method of removing a material from a surface includes providing a substrate comprising a material having a surface, contacting the surface with a polishing medium, applying a voltage to the substrate to remove material from the surface, and changing the voltage during the removing material from the surface. An electro-chemical mechanical polishing method includes providing a substrate having a surface, applying a platen to the surface, applying a first voltage to the substrate, rotating the platen and surface relative to each other at a first rotational speed, increasing to a second voltage, and decreasing to a second rotational speed.

Abstract: Methods and systems for removing materials from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes providing a microfeature workpiece having a substrate material and a conductive material that includes a refractory metal (e.g., tantalum, tantalum nitride, titanium, and/or titanium nitride). First and second electrodes are positioned in electrical communication with the conductive material via a generally organic and/or non-aqueous electrolytic medium. At least one of the electrodes is spaced apart from the workpiece. At least a portion of the conductive material is removed by passing an electrical current along an electrical path that includes the first electrode, the electrolytic medium, and the second electrode. Electrolytically removing the conductive material can reduce the downforce applied to the workpiece.

Abstract: Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

Abstract: Methods and apparatuses for removing material from a microfeature workpiece are disclosed. In one embodiment, the microfeature workpiece is contacted with a polishing surface of a polishing medium, and is placed in electrical communication with first and second electrodes, at least one of which is spaced apart from the workpiece. A polishing liquid is disposed between the polishing surface and the workpiece and at least one of the workpiece and the polishing surface is moved relative to the other. Material is removed from the microfeature workpiece and at least a portion of the polishing liquid is passed through at least one recess in the polishing surface so that a gap in the polishing liquid is located between the microfeature workpiece and the surface of the recess facing toward the microfeature workpiece.

Abstract: Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

Abstract: A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: Methods of selectively etching BPSG over TEOS are disclosed. In one embodiment, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. An etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etchant may be utilized to etch the TEOS layer. The second etchant may be less aggressive and, thus, not damage the components underlying the TEOS layer.

Abstract: Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material.