Abstract: An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source (11). The illumination system has a light distribution device (25) which receives light from the primary light source and, from this light, produces a two-dimensional intensity distribution which can be set variably in a pupil-shaping surface (31) of the illumination system. The light distribution device has at least one optical modulation device (20) having a two-dimensional array of individual elements (21) that can be controlled individually in order to change the angular distribution of the light incident on the optical modulation device. The device permits the variable setting of extremely different illuminating modes without replacing optical components.

Abstract: An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source (11). The illumination system has a light distribution device (25) which receives light from the primary light source and, from this light, produces a two-dimensional intensity distribution which can be set variably in a pupil-shaping surface (31) of the illumination system. The light distribution device has at least one optical modulation device (20) having a two-dimensional array of individual elements (21) that can be controlled individually in order to change the angular distribution of the light incident on the optical modulation device. The device permits the variable setting of extremely different illuminating modes without replacing optical components.

Abstract: A lithographic apparatus includes an illumination unit including a radiation source configured to generate a radiation bundle, an illumination optics with a numerical aperture NA0 and an aperture system; a projection lens having a first numerical aperture NAOB1; a support arranged between the illumination unit and the projection lens and configured to support a patterning device; a substrate support configured to support a substrate on which structures on the patterning device are imaged, wherein the first numerical aperture NAOB1 of the projection lens is smaller than the numerical aperture NA0 of the illumination unit.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: Illumination systems which are designed to illuminate a field in a field plane and simultaneously illuminate a pupil plane with radiation from a light source are disclosed.

Abstract: One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall.

Abstract: The invention relates to an optical device that includes (a) a first optical element with at least one first raster element, where the first raster element has a first axis, (b) a second optical element with at least one second raster element, where the second raster element has a second axis. The first raster element can be changed in its position relative to the second raster element, so that a distance between the first axis and the second axis is variable.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: The invention relates to a projection objective (6), in particular for applications in microlithography, serving to project an image of an object (3) arranged in an object plane (4) onto a substrate (18) arranged in an image plane (7). The projection objective (6) has an object-side-oriented part (10) which is arranged adjacent to the object plane (4) and includes a plurality of optical elements, and it also has an image-side-oriented part (11) of the objective which is arranged adjacent to the image plane (7) and includes a free space (16) serving to receive a fluid (13) and further includes at least a part of an optical end-position element (14) serving to delimit the free space (16) towards the object side. The projection objective (6) is operable in different modes of operation in which the free space (16) is filled with fluids (13) that differ in their respective indices of refraction.

Abstract: There is provided a multi-mirror-system for an illumination system, especially for lithography with wavelengths ?193 nm. The system includes light rays traveling along a light oath from an object plane to an image plane, and an arc-shaped field in the image plane, whereby a radial direction in the middle of the arc-shaped field defines a scanning direction. The first mirror and the second mirror are arranged in the light path in such a position and having such a shape, that the edge sharpness of the arc-shaped field in the image plane is smaller than 5 mm in the scanning direction. Furthermore, the light rays are impinging on the first mirror and the second mirror with incidence angles ?30° or ?60° relative to a surface normal of the first and second mirror.

Abstract: A mask having a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the period thickness in the mask plane is selected so that it is greater than the period thickness for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: An optical imaging system for a microlithography projection exposure system is used for imaging an object field arranged in an object plane of the imaging system into an image field arranged in an image plane of the imaging system. A projection objective or a relay objective to be used in the illumination system can be involved, in particular. The imaging system has a plurality of lenses that are arranged between the object plane and the image plane and in each case have a first lens surface and a second lens surface. At least one of the lenses is a double aspheric lens where the first lens surface and the second lens surface is an aspheric surface. Lenses of good quality that have the action of an asphere with very strong deformation can be produced in the case of double aspheric lenses with an acceptable outlay as regards the surface processing and testing of the lens surfaces.

Abstract: A beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus includes a first beam reshaping element having a first beam reshaping surface and a second beam reshaping element having a second beam reshaping surface which faces the first beam reshaping surface. The two beam reshaping surfaces are rotationally symmetrical with respect to an optical axis of the beam reshaping unit. At least the first beam reshaping surface has a concavely or convexly curved region.

Abstract: An optical beam transformation system has a sequence of optical elements arranged along an optical axis of the optical beam transformation system and designed for transforming an entrance light distribution striking an entrance surface of the optical beam transformation system into an exit light distribution emerging from an exit surface of the optical beam transformation system by radial redistribution of light intensity. The optical elements include a transformation element causing a radial redistribution of light intensity and having a transformation surface inclined to the optical axis and causing a polarization-selective reflection of a light distribution incident on the transformation surface according to an efficiency symmetry characteristic for the transformation surface.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: A projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n?1.6 at the operating wavelength.

Abstract: A microlithographic illumination system can include a light distribution device that can generate a two-dimensional intensity distribution in a first illumination plane. A first raster array of optical raster elements can generates a raster array of secondary light sources. A device with an additional optical effect can be disposed spatially adjacent to the two raster arrays. The device can be configured as an illumination angle variation device. The device can influence the intensity and/or the phase and/or the beam direction of the illumination light. The influence can be such that an intensity contribution of raster elements to the total illumination intensity can vary across the illumination field. This can enable the illumination intensity to be influenced across the illumination field in a defined manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different directions of illumination.