Abstract: Method of controlling a driver strength and a termination impedance of a signal line of an interface, wherein the driver sends an output signal as an alternating voltage with a frequency, wherein the signal line is terminated with a termination impedance, wherein the driver strength is changed depending on a changing of the frequency of the output signal.

Abstract: The invention relates to a memory with a memory array with memory cells, with an input/output circuit which is connected to the memory cells and which interchanges data with the memory cells, with an output register which is connected to the input/output circuit, with the output register being used to output data via a data output, having an input register which is connected to a data input and to the input/output circuit, with the data input and the input register being used to input data into the memory cells, with test data being written to the output register in a test mode. The invention furthermore relates to a process for testing a memory and to a memory module.

Abstract: Transfer switching devices, which supplement unidirectional input switching arrangements or pad circuits are employed to route an internal test signal to the input of an input driver in the unidirectional input switching arrangement and to couple the internal test signal to an internal switching logic unit. The transfer switching devices are controlled via a multiplexer unit, which can be programmed directly using boundary scan registers. The present invention allows all unidirectional pad circuits or input drivers to be tested in the course of a reduced I/O test method for semiconductor circuits, in which testing internal circuits in the semiconductor circuit involves only a subset of the signal connections associated with the input drivers being coupled to a test apparatus.

Abstract: The invention relates to a semiconductor memory apparatus having at least one clock input contact for inputting an external clock signal, at least one clock output contact for outputting a data read clock signal for reading data stored in the semiconductor memory apparatus, at least one data contact for outputting data stored in the semiconductor memory apparatus, at least one phase adjustment device which is designed for approximately adjusting a phase of the data read clock signal on the basis of a phase of the external clock signal at least one phase difference test device which is designed for approximately detecting a phase difference between the phase of the data read clock signal and the phase of the external clock signal and for outputting a test result on the basis of the detected phase difference.

Abstract: An electrical circuit can be described with a reference model that has a plurality of states and a plurality of state transitions. Acceptable and/or unacceptable instruction sets are predefined for each state. Acceptable and unacceptable instruction sets are generated randomly in succession from the reference model and applied to a mapping of the electrical circuit for processing. By comparing the instruction sets processed by the mapping of the electrical circuit with the instruction sets determined from the reference model, conclusive information relating to the mapping of the electrical circuit is obtained.

Abstract: The invention relates to a method for reading data from a semiconductor memory, said method comprising the following steps in this order: providing at least one first memory bank and at least one shadow memory bank which are each designed to store a multiplicity of binary data items, the same data as in the first memory bank being stored in the shadow memory bank; receiving a command for reading data which are to be read from the first memory bank; utilizing a state checking device of the semiconductor memory to check whether the first memory bank is in an open memory bank state, and, if the first memory bank is in the open memory bank state, reading the data which are to be read from the at least one shadow memory bank, and, if the first memory bank is not in the open memory bank state, reading the data which are to be read from the first memory bank, the open memory state being such a memory state of the memory bank which does not allow the data which are to be read to be read without previously closing an

Abstract: Memory apparatus having a short word line cycle time and method for operating a memory apparatus. One embodiment provides a memory apparatus comprising at least one cell array having a multiplicity of memory cells, with each of the memory cells having an associated word line and an associated bit line; a control device which has a signaling connection to the word lines and to the bit lines and is configured to read data stored in the memory cells and to write data to the memory cells; wherein the control device is configured to execute a destructive read command (DRD) for reading data from at least one of the memory cells, comprising: electrically biasing a bit line associated with the at least one memory cell, opening a word line associated with the at least one memory cell, and destructively reading data stored in the at least one memory cell.

Abstract: An integrated circuit produced from non-monocrystalline semiconductors, including a plurality of transistors, all of the transistors being of the same type, and at least two timer signal inputs, wherein the timer signals fed to the different inputs are temporally non-overlapping signals.

Abstract: The invention relates to a semiconductor memory apparatus having at least one clock input contact for inputting an external clock signal, at least one clock output contact for outputting a data read clock signal for reading data stored in the semiconductor memory apparatus, at least one data contact for outputting data stored in the semiconductor memory apparatus, at least one phase adjustment device which is designed for approximately adjusting a phase of the data read clock signal on the basis of a phase of the external clock signal at least one phase difference test device which is designed for approximately detecting a phase difference between the phase of the data read clock signal and the phase of the external clock signal and for outputting a test result on the basis of the detected phase difference.

Abstract: For testing or for characterizing output drivers of output circuits of high-speed semiconductor memory devices under conditions close to an application, scan elements are provided at the inputs of the output circuits. The scan elements in each case have a register function and are cascaded to form a scan chain. Via the scan chain, test data signals are applied to the inputs of the output circuits whilst bypassing a memory cell array of the semiconductor memory devices. The characterization of data signals of the high-speed semiconductor memory devices that are output by the output circuits requires only a test memory controller not connected to the data signal terminals and a passive load simulation of the application memory controller.

Abstract: The invention relates to a method for testing a semiconductor memory device, the semiconductor memory device being able to be operated in a normal operating mode and a test mode. The method for testing includes communicating test input data to be used for a test to the semiconductor memory device; storing the test input data in memory cells of a memory area of the semiconductor memory device; and reading out the stored test input data from the memory cells for carrying out a test in order to obtain test output data, the memory area in which the test input data are stored in the test mode being used for storing data in the normal operating mode. In addition, the invention relates to a semiconductor memory device and a system for testing a semiconductor memory device.

Abstract: The invention relates to a method for testing a memory device with the memory device being able to be operated in a normal operating mode and a test mode and comprising output driver, input driver, and data pads. The method comprises the steps of communicating test input data to be used for a test to the memory device, performing a test using the test input data in order to obtain test output data, the test data read out being passed via an output driver, at least one data pad, and an input driver, wherein the input drivers and output drivers are switched during the test in such a way as to enable data to be simultaneously read from and written to the memory device, and creating a data test result from the test output data. Furthermore, the invention relates to a memory device and a system for testing a memory device.

Abstract: Methods and apparatus for testing a semiconductor device. A testing interface is configured to interface with an external test apparatus and a device under test (DUT). In one embodiment, the testing interface receives test data and a test clock signal from the external test apparatus. The test data is clocked out of the testing interface and to the DUT according to the test clock signal. Further, the test clock signal is delayed by a period of time and then a delayed clock signal is issued to the device. The data previously written to the DUT is read out of the DUT and compared with the test data received from the external test apparatus. The period of time by which the test clock signal is delayed can be varied to achieve a desired timing.

Abstract: The invention relates to a semiconductor memory device, which can be operated in a normal operating mode and a test mode, comprising: data terminals and data clock terminals; input receivers for processing the signal arriving via the respective terminal, a respective input receiver being assigned to a data terminal and/or data clock terminal; at least one test circuit, a respective test circuit being assigned to an input receiver and the test circuit being designed for determining at least one predetermined property of the assigned input receiver.

Abstract: Memory apparatus having a short word line cycle time and method for operating a memory apparatus. One embodiment provides a memory apparatus comprising at least one cell array having a multiplicity of memory cells, with each of the memory cells having an associated word line and an associated bit line; a control device which has a signaling connection to the word lines and to the bit lines and is configured to read data stored in the memory cells and to write data to the memory cells; wherein the control device is configured to execute a destructive read command (DRD) for reading data from at least one of the memory cells, comprising: electrically biasing a bit line associated with the at least one memory cell, opening a word line associated with the at least one memory cell, and destructively reading data stored in the at least one memory cell.

Abstract: A method and a configuration for the output of bit error tables from semiconductor devices are described. A test control unit reads the bit error table from the memory device following a request from the test apparatus. Then, the bit error tables are transmitted sequentially to the test apparatus for further processing.

Abstract: Unidirectional input switching arrangements or pad circuits are supplemented by transfer switching devices employed to route an internal test signal to the input of an input driver in the unidirectional input switching arrangement and to couple it to an internal switching logic unit. The transfer switching devices are controlled via a multiplexer unit, which for its part can be programmed directly using boundary scan registers. The present invention allows all unidirectional pad circuits or input drivers to be tested in the course of a reduced I/O test method for semiconductor circuits, in which testing internal circuits in the semiconductor circuit involves only a subset of the signal connections associated with the input drivers being coupled to a test apparatus.

Abstract: The temperature of a semiconductor component is determined by way of a memory cell that includes a transistor and a capacitor. To that end, a signal is determined in dependence on a threshold voltage of the transistor and a value for the temperature of the transistor is determined in dependence on the signal.

Abstract: For testing or for characterizing output drivers of output circuits of high-speed semiconductor memory devices under conditions close to an application, scan elements are provided at the inputs of the output circuits. The scan elements in each case have a register function and are cascaded to form a scan chain. Via the scan chain, test data signals are applied to the inputs of the output circuits whilst bypassing a memory cell array of the semiconductor memory devices. The characterization of data signals of the high-speed semiconductor memory devices that are output by the output circuits requires only a test memory controller not connected to the data signal terminals and a passive load simulation of the application memory controller.

Abstract: A method and device for measuring voltage of an internal reference voltage source of an integrated semiconductor circuit, in particular, a DRAM, including the steps of comparing a reference voltage to an external comparison voltage with a comparator, forming a measured value for the reference voltage to be set in accordance with a comparison result, switching a commutator by a clock- or software-control to alternatively apply the reference voltage and the comparison voltage to the comparator inputs at the same time, varying one of the reference and comparison voltage to a setpoint voltage value until the comparator output changes its logic value at each commutator switched stage, buffering the voltage values present for each switched state when the logic value changes, forming an average value for the reference voltage from the stored voltage values, and setting the reference voltage as a function of the average value formed.