Abstract: Provided are electronic device including a variable resistance element and a method for fabricating an electronic device including a variable resistance element. The electronic device including a variable resistance element includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include cooling the substrate, before forming the magnetic correction layer such that the magnetic correction layer is formed over the cooled substrate.

Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a hole; a conductive pattern filled in the hole and having a top surface located at a level substantially same as a top surface of the interlayer dielectric layer; and an MTJ (Magnetic Tunnel Junction) structure formed over the conductive pattern to be coupled to the conductive pattern and including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein an upper portion of the conductive pattern includes a first amorphous region.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.

Abstract: Disclosed are an electronic device comprising a semiconductor memory. The semiconductor memory includes a variable resistance element including a free layer having a variable magnetization direction; a pinned layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the free layer includes: a first free layer adjacent to the tunnel barrier layer and having a perpendicular magnetic anisotropy at an interface with the tunnel barrier layer; and a second free layer spaced apart from the tunnel barrier layer by the first free layer and having a saturation magnetization lower than a saturation magnetization of the first free layer.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.

Abstract: Implementations of the disclosed technology provide an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a magnetic tunnel junction (MTJ) structure including a free layer having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer sandwiched between the free layer and the pinned layer; and an under layer located under the MTJ structure, wherein the under layer includes a first under layer including a silicon-based alloy, and a second under layer located on the first under layer and including a metal.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: A battery exchange station and a method of operating the battery exchange station are provided which can solve conventional problems, such as the unavailability of electricity stored in a battery, the difficulties in coping with changes in system operation, and the difficulties in utilizing renewable energy. The battery exchange station and the method of operating the battery exchange station allow for utilization of electricity stored in a battery and improve a system's operation and electricity demand conditions by charging a large-capacity battery with electricity coming from the system and providing the electricity stored in the large-capacity battery to the system.

Abstract: Certain aspects of the present disclosure generally relate to wireless communications. In some aspects, a wireless communication device may determine that the wireless communication device is configured to use a primary component carrier (PCC), a first secondary component carrier (SCC), and a second SCC for carrier aggregation. A primary cell may be associated with the PCC, a first secondary cell may be associated with the first SCC, and a second secondary cell may be associated with the second SCC. The first secondary cell may provide control information for the second secondary cell. The wireless communication device may monitor at least one of the first SCC or the second SCC. The wireless communication device may perform an action associated with the second secondary cell based, at least in part, on monitoring the at least one the first SCC or the second SCC.

Abstract: This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer.

Abstract: According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

Abstract: This disclosure provides techniques for managing antenna sharing on a multi-mode wireless device between coexisting cellular and WLAN modems operating on the same band. One of the modems can communicate a WLAN scanning parameter to another one of the modems, and the distribution of shared antennas between the cellular modem and the WLAN modem may be modified based at least in part on the communicated scanning parameter to accommodate a WLAN scan on channels in the shared band. The distribution of the shared antennas between the modems for the WLAN scan may additionally or alternatively be selected based at least in part on the source of a detected WLAN scanning trigger (e.g., whether the scan is triggered by an application of the wireless device or the WLAN modem of the wireless device).

Abstract: An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.

Abstract: Provided are a method, system, and non-transitory computer-readable medium for recommending a meeting place based on appointment information. The meeting placement recommendation method may include enrolling appointment information based on information received from a user terminal over a network; selecting affiliated stores based on location information including the enrolled appointment information; providing the appointment information to the selected affiliated stores, and providing an enrollment function of enrolling a counter offer associated with the appointment information to the affiliated stores, the enrollment function including a function that enables the affiliated stores to input and enroll recommendation information about at least one of a place, a product, and a service in association with the appointment information; and providing the recommendation information enrolled through the function to the user terminal.

Abstract: An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.

Abstract: A method of outputting notification of data reception in a device configured to transmit and receive data to and from an external device and a computer program recorded on a non-transitory computer-readable recording medium, which when executed by a processor, is configured to cause the device to perform the method are provided. The method includes receiving, by a processor of the device, data from the external device, determining, by the processor of the device, an importance of notification by recognizing at least one of a state of the device and surrounding circumstances of the device, and outputting. by the processor of the device, the notification of the data reception when the determined importance of the notification exceeds a first threshold value.

Abstract: Disclosed herein is an apparatus and method for providing music related information by searching audio DNA information related to music output through, for example, a TV. The method including: receiving an audio DNA and broadcasting information of broadcasted music; identifying, using the music search server, the broadcasted music by determining whether the received broadcasting information matches music information and broadcast time of one of a plurality of broadcasting programs or advertisements, and comparing, when the determining fails to match the broadcasted music, the received audio DNA with audio DNA of the music pieces to identify the broadcasted music; searching detailed information on music identified by the audio DNA searcher; and transmitting the detailed information search result.

Abstract: An electronic device is provided to include a semiconductor memory that includes: a substrate including a first region and a second region different from the first region; an interlayer dielectric layer formed over the substrate; a first conductive pattern located over the first region and formed in the interlayer dielectric layer, the first conductive pattern including a planarized top surface with a top surface of the interlayer dielectric layer; a second conductive pattern located over the second region and formed in the interlayer dielectric layer, the second conductive pattern including at least a portion recessed below a top surface of the interlayer dielectric layer; a variable resistance pattern formed over the interlayer dielectric layer the variable resistance pattern having a bottom surface coupled to the first conductive pattern and exhibiting different resistance values; and a capping layer pattern formed over the variable resistance pattern.

Abstract: Disclosed are an electronic device comprising a semiconductor memory and a method for fabricating the same, which enable the characteristics of a variable resistance element to be improved. The electronic device includes a semiconductor memory. The semiconductor memory includes a variable resistance element including a stack of a pinned layer, a tunnel barrier layer and a variable layer. The variable layer may include a material layer having a standard electrode potential higher than that of Fe. According to the electronic device including the semiconductor memory and the method for fabricating the same according to the implementation of the disclosed technology, the characteristics of the variable resistance element may be improved.