Abstract: An electronic device and a method of controlling an electronic device are provided. The electronic device includes a first transistor having a first resistor, second resistor, first transistor, and second transistor. The second resistor is connected to the first resistor. The first transistor is connected to the first resistor in parallel and has a first bulk. The second transistor is connected to the second resistor in parallel and has a second bulk. The first bulk of the first transistor receives a first voltage and the first bulk of the second transistor receives a second voltage. The first voltage and the second voltage are different.

Abstract: A semiconductor circuit and a semiconductor device for determining a status of a fuse element are provided. The semiconductor circuit includes a configurable reference resistor unit with a first terminal receiving a first power signal and a second terminal electrically coupled to the fuse element. The semiconductor circuit also includes a first switching circuit electrically connecting the configurable reference resistor unit and the fuse element and a latch circuit for reading an evaluation signal of a first node between the configurable reference resistor unit and the fuse element.

Abstract: The present application discloses a method for preparing a semiconductor device including an electronic fuse control circuit. The method includes providing a chip including an electronic fuse control circuit, wherein the electronic fuse control circuit includes a program voltage pad, a fuse element, a latch, a plurality of resistor selection pads, and a plurality of bonding option units. The method further includes providing a substrate including a first voltage bonding pad and a plurality of second voltage bonding pads, disposing the chip on the substrate, bonding the first voltage bonding pad to the program voltage pad, and bonding at least one of the plurality of second voltage bonding pads to at least one of the plurality of resistor selection pads.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a decoupling capacitor structure, and an electronic component. The decoupling capacitor structure is disposed on the substrate. The electronic component is disposed on the decoupling capacitor structure and electrically connected to the decoupling capacitor structure. The electronic component is stacked over the decoupling capacitor structure.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a decoupling capacitor structure, and an electronic component. The decoupling capacitor structure is disposed on the substrate. The electronic component is disposed on the decoupling capacitor structure and electrically connected to the decoupling capacitor structure. The electronic component is stacked over the decoupling capacitor structure.

Abstract: An electronic device including a phase detector is provided. The phase detector includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a first equalizer device. The first transistor has a first input terminal configured to receive a first signal. The second transistor has a second input terminal configured to receive a second signal. The third transistor is electrically connected to the first transistor and has a first output terminal. The fourth transistor is electrically connected to the second transistor and has a second output terminal. The first equalizer device is connected between the first output terminal and the second input terminal.

Abstract: An electronic device and phase detector are provided. The phase detector includes a first input terminal, a second input terminal, a first input buffer, and a second input buffer. The first input buffer is electrically connected to the first input terminal. The second input buffer is electrically connected to the second input terminal.

Abstract: A WBGA package and a method of manufacturing a WBGA package are provided. The WBGA package includes a first substrate having a first through hole and a second substrate having a second through hole over the first through hole of the first substrate. The WBGA package also includes an electronic component having an active surface over the second through hole of the second substrate.

Abstract: An electronic device including a phase detector is provided. The phase detector includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a first equalizer device. The first transistor has a first input terminal configured to receive a first signal. The second transistor has a second input terminal configured to receive a second signal. The third transistor is electrically connected to the first transistor and has a first output terminal. The fourth transistor is electrically connected to the second transistor and has a second output terminal. The first equalizer device is connected between the first output terminal and the second input terminal.

Abstract: An electronic device and phase detector are provided. The phase detector includes a first input terminal, a second input terminal, a first input buffer, and a second input buffer. The first input buffer is electrically connected to the first input terminal. The second input buffer is electrically connected to the second input terminal.

Abstract: A WBGA package and a method of manufacturing a WBGA package are provided. The WBGA package includes a first substrate having a first through hole and a second substrate having a second through hole over the first through hole of the first substrate. The WBGA package also includes an electronic component having an active surface over the second through hole of the second substrate.

Abstract: An electronic device and a method of controlling an electronic device are provided. The electronic device includes a first transistor having a first resistor, second resistor, first transistor, and second transistor. The second resistor is connected to the first resistor. The first transistor is connected to the first resistor in parallel and has a first bulk. The second transistor is connected to the second resistor in parallel and has a second bulk. The first bulk of the first transistor receives a first voltage and the first bulk of the second transistor receives a second voltage. The first voltage and the second voltage are different.

Abstract: A bonding pad structure and a method of manufacturing a bonding pad structure are provided. The bonding pad structure includes a carrier, a first conductive layer disposed over the carrier, a second conductive layer disposed on the first conductive layer and contacting the first conductive layer, and a third conductive layer disposed on the second conductive layer and contacting the second conductive layer. The bonding pad structure also includes a first passivation layer disposed on the first conductive layer and contacting at least one of the first conductive layer or the second conductive layer. An upper surface of the third conductive layer facing away from the carrier is exposed from the first passivation layer.

Abstract: A bonding pad structure and a method of manufacturing a bonding pad structure are provided. The bonding pad structure includes a carrier, a first conductive layer disposed over the carrier, a second conductive layer disposed on the first conductive layer and contacting the first conductive layer, and a third conductive layer disposed on the second conductive layer and contacting the second conductive layer. The bonding pad structure also includes a first passivation layer disposed on the first conductive layer and contacting at least one of the first conductive layer or the second conductive layer. An upper surface of the third conductive layer facing away from the carrier is exposed from the first passivation layer.

Abstract: A semiconductor package includes a package substrate, a semiconductor chip and a plurality of bonding wires. The package substrate includes a connection pad. The semiconductor chip is disposed over the package substrate and includes a chip pad, a bonding pad, and a redistribution layer. The bonding pad is closer to a periphery of the semiconductor chip than the chip pad. The redistribution layer is connected between the chip pad and the bonding pad. The bonding wires are connected in parallel between the connection pad and the bonding pad.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure extending along a first direction and electrically connected to a first transistor, a second gate structure extending along the first direction and electrically connected to a second transistor, a first active region extending along a second direction different from the first direction and across the first gate structure and the second gate structure, and a first conductive element extending along the second direction and disposed on the first active region. The first conductive element is electrically connected to the first active region. The first conductive element is electrically connected to the first active region, such that a short circuit between the first active region and the third transistor is formed. The first gate structure and the first active region form a first fuse element, and the second gate structure and the first active region form a second fuse element.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, a bonding wire, and a fixing feature. The electronic component is disposed on the substrate. The bonding wire includes a first terminal connected to the electronic component and a second terminal connected to the substrate. The fixing feature is disposed on the substrate. The bonding wire is at least partially disposed on the fixing feature.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate. The method also includes attaching an electronic component to the substrate. The method further includes attaching a fixing feature to an upper surface of the electronic component. In addition, the method includes forming a bonding wire connecting the substrate and the electronic component. The bonding wire is at least partially disposed on the fixing feature.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure extending along a first direction and electrically connected to a first transistor, a second gate structure extending along the first direction and electrically connected to a second transistor, a first active region extending along a second direction different from the first direction and across the first gate structure and the second gate structure, and a first conductive element extending along the second direction and disposed on the first active region. The first conductive element is electrically connected to the first active region. The first conductive element is electrically connected to the first active region, such that a short circuit between the first active region and the third transistor is formed. The first gate structure and the first active region form a first fuse element, and the second gate structure and the first active region form a second fuse element.

Abstract: A semiconductor device includes a substrate; an electronic component disposed on the substrate; a bonding wire comprising a first terminal connected to the electronic component and a second terminal connected to the substrate; and a supporter disposed between the first terminal and the second terminal of the bonding wire.