Abstract: Memory systems and memory dies are provided. The memory system of the present disclosure includes a plurality of memory dies stacked within the memory system. Each memory die includes a numbering circuit configured to generate an output number signal according to an input number signal. The numbering circuit includes a plurality of calculating circuits coupled in series, each of the calculating circuits being configured to generate a first output bit and a second output bit. A current stage calculating circuit is configured to receive the first output bit from a previous stage calculating circuit and a corresponding bit of the input number signal to generate the first output bit and the second output bit, and the second output bit being output as a corresponding bit of the output number signal.

Abstract: A package structure and a method of manufacturing a package structure are provided. The package structure includes a first substrate, a first electronic component, a second substrate and a second electronic component. The first electronic component is disposed over a first through hole of the first substrate. The first electronic component is electrically connected to a first patterned circuit layer of the first substrate through an extending portion of the first patterned circuit layer extending beyond a sidewall of the first through hole. The second electronic component is disposed over a second through hole of the second substrate. The second electronic component is electrically connected to a second patterned circuit layer of the second substrate through an inner extending portion of the second patterned circuit layer extending beyond a sidewall of the second through hole.

Abstract: The present disclosure is related to a semiconductor package. The semiconductor package includes a substrate and a semiconductor chip. The substrate includes a window through a center portion of the substrate, in which the substrate has an inner sidewall surrounding the window and a conductive foil located on a top surface of the substrate, in which the conductive foil extends beyond the inner sidewall of the substrate. The semiconductor chip is located on the top surface of the substrate, in which the conductive foil is located between the substrate and the semiconductor chip, and the semiconductor chip has a bonding pad electrically connected to the conductive foil.

Abstract: A delay locked loop device is provided, which includes a receiver, a delay line, a frequency detection and control circuit, a phase detector, and a delay control circuit. The receiver compares an input clock signal and a reference voltage to generate a first signal, and generate a reference clock signal based on the input clock signal. The delay line delays the first signal to generate a second signal based on a delay control signal. The frequency detection and control circuit detects an operating frequency of the reference clock signal to generate an enable signal. The phase detector detects, in response to the enable signal, a phase difference between the reference clock signal and a feedback clock signal to generate a phase detection result. The delay control circuit is configured to generate the delay control signal for the delay line based on the phase detection result.

Abstract: A bonding pad structure and a method of manufacturing a bonding pad structure are provided. The bonding pad structure includes a carrier, a first conductive layer disposed over the carrier, a second conductive layer disposed on the first conductive layer and contacting the first conductive layer, and a third conductive layer disposed on the second conductive layer and contacting the second conductive layer. The bonding pad structure also includes a first passivation layer disposed on the first conductive layer and contacting at least one of the first conductive layer or the second conductive layer. An upper surface of the third conductive layer facing away from the carrier is exposed from the first passivation layer.

Abstract: A semiconductor device is provided, which includes a semiconductor die and a redistribution layer. The redistribution layer is formed on the semiconductor die, and includes a plurality of center pads, a plurality of edge pads, and a plurality of conductive wires electrically connecting the plurality of center pads to the plurality of edge pads. Each of the plurality of conductive wires comprises at least two turning points, and an inner angle at each turning point is greater than a predetermined angle.

Abstract: A memory device and a method for protecting the same are provided. The memory device includes: a random number generator, a counter, and a controller. The random number generator includes a first logic gate and a second logic gate configured to generate a first output and a second output, respectively, according to the address of the first word line and the address of the first accessed word line. The random number generator further includes a switch configured to select one of the first output and the second output to be a first number. The counter is configured to receive the first number and count down from the first number. The controller is configured to obtain an address of a second accessed word line being accessed when the counter counts down to zero, and refresh adjacent word lines of the second accessed word line during a second refresh cycle.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a decoupling capacitor structure, and an electronic component. The decoupling capacitor structure is disposed on the substrate. The electronic component is disposed on the decoupling capacitor structure and electrically connected to the decoupling capacitor structure. The electronic component is stacked over the decoupling capacitor structure.

Abstract: A package structure and a method of manufacturing a package structure are provided. The package structure includes a first substrate, a first electronic component, a second electronic component and a second substrate. The first electronic component is disposed over and electrically connected to the first substrate. An active surface of the first electronic component faces the first substrate. The second electronic component is disposed under and electrically connected to the first substrate. An active surface of the second electronic component faces the first substrate. The second substrate is disposed under and electrically connected to the first substrate. The second substrate defines a cavity for accommodating the second electronic component.

Abstract: The present disclosure is related to a semiconductor package. The semiconductor package includes a substrate and a semiconductor chip. The substrate includes a window through a center portion of the substrate, in which the substrate has an inner sidewall surrounding the window and a conductive foil located on a top surface of the substrate, in which the conductive foil extends beyond the inner sidewall of the substrate. The semiconductor chip is located on the top surface of the substrate, in which the conductive foil is located between the substrate and the semiconductor chip, and the semiconductor chip has a bonding pad electrically connected to the conductive foil.

Abstract: A package structure and a method of manufacturing a package structure are provided. The package structure includes a first substrate, a first electronic component, a second substrate and a second electronic component. The first electronic component is disposed over a first through hole of the first substrate. The first electronic component is electrically connected to a first patterned circuit layer of the first substrate through an extending portion of the first patterned circuit layer extending beyond a sidewall of the first through hole. The second electronic component is disposed over a second through hole of the second substrate. The second electronic component is electrically connected to a second patterned circuit layer of the second substrate through an inner extending portion of the second patterned circuit layer extending beyond a sidewall of the second through hole.

Abstract: A control unit in a memory and a method of controlling a memory are provided. The control unit includes a first input stage, a second input stage, a first output stage, and a second output stage. The first input stage is configured to receive a first signal and a second signal. The second input stage is configured to receive the first signal and the second signal. The first output stage is connected to the first input stage and configured to generate a first processed signal. The second output stage is connected to the second input stage and configured to generate a second processed signal. If the first signal and the second signal are identical, the first processed signal and the second processed signal are different.

Abstract: A label dispensing device includes a housing having a label outlet, a collection reel, a feeding reel, a driving mechanism and a peeling mechanism. The collection reel and the feeding reel are rotatably disposed in the housing. The driving mechanism drives one of the feeding reel and the collection reel for conveying a label strip from the feeding reel to the collection reel. The peeling mechanism is disposed in the housing and used to change a conveying direction of the label strip being pulled from the feeding reel towards the label outlet into a recycled direction intersected with the conveying direction from the peeling mechanism downwardly for peeling off one of label stickers from the label strip when the label sticker is passing the peeling mechanism.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, and an encapsulant. The substrate has a lower surface and an upper surface opposite to the lower surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate. The encapsulant includes a first portion penetrating the substrate at a central region of the substrate and a second portion penetrating the substrate at a peripheral region of the substrate.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, and an encapsulant. The substrate has a lower surface and an upper surface opposite to the lower surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate. The encapsulant includes a first portion penetrating the substrate at a central region of the substrate and a second portion penetrating the substrate at a peripheral region of the substrate.

Abstract: A memory device and a noise suppression method thereof are provided. An input receiving circuit of a memory circuit receives a data strobe differential signal pair. A noise suppression circuit provides a noise suppression resistor connected between an input terminal of the input receiving circuit and a ground voltage during a write data strobe signal off period before a write preamble period.

Abstract: A delay locked loop device is provided, which includes a receiver, a delay line, a frequency detection and control circuit, a phase detector, and a delay control circuit. The receiver compares an input clock signal and a reference voltage to generate a first signal, and generate a reference clock signal based on the input clock signal. The delay line delays the first signal to generate a second signal based on a delay control signal. The frequency detection and control circuit detects an operating frequency of the reference clock signal to generate an enable signal. The phase detector detects, in response to the enable signal, a phase difference between the reference clock signal and a feedback clock signal to generate a phase detection result. The delay control circuit is configured to generate the delay control signal for the delay line based on the phase detection result.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, an encapsulant, and a dam structure. The substrate has a lower surface and an upper surface opposite to the first surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate and has a portion penetrating the substrate. The dam structure vertically overlaps the portion of the encapsulant.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, an electronic component, an encapsulant, and a dam structure. The substrate has a lower surface and an upper surface opposite to the first surface. The electronic component is disposed on the upper surface of the substrate. The encapsulant is disposed on the upper surface of the substrate and has a portion penetrating the substrate. The dam structure vertically overlaps the portion of the encapsulant.

Abstract: A delay locked loop device is provided, which includes a receiver, a delay line, a frequency detection and control circuit, a phase detector, and a delay control circuit. The receiver compares an input clock signal and a reference voltage to generate a first signal, and generate a reference clock signal based on the input clock signal. The delay line delays the first signal to generate a second signal based on a delay control signal. The frequency detection and control circuit detects an operating frequency of the reference clock signal to generate an enable signal. The phase detector detects, in response to the enable signal, a phase difference between the reference clock signal and a feedback clock signal to generate a phase detection result. The delay control circuit is configured to generate the delay control signal for the delay line based on the phase detection result.