Abstract: The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor die, a package substrate and bonding wires. The semiconductor die has I/O pads arranged at an active side. The package substrate is provided with a first side attached to the active side of the semiconductor die and a second side facing away from the semiconductor die, and has an opening penetrating through the package substrate. The I/O pads are overlapped with the opening. A width of the opening at the second side of the package substrate is greater than a width of the opening at the first side of the package substrate. The bonding wires connect the I/O pads to the second side of the package substrate through the opening of the package substrate.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first substrate including a center region and an edge region distal from the center region, a first circuit layer positioned on the first substrate, a center power pad positioned in the first circuit layer and above the center region, an edge power pad positioned in the first circuit layer, above the edge region, and electrically coupled to the center power pad, a redistribution power pattern positioned above the first circuit layer and electrically coupled to the center power pad, and an edge power via positioned between the edge power pad and the redistribution power pattern, and electrically connecting the edge power pad and the redistribution power pattern. The first substrate, the center power pad, the edge power pad, the redistribution power pattern, and the edge power via together configure a first semiconductor die.

Abstract: A data receiving circuit is provided. The data receiving circuit includes a data input circuit, a latch circuit, and an equalizer. The data input circuit is configured to receive an input signal. The latch circuit is connected to the data input circuit and configured to output an output signal in response to the input signal. The equalizer is connected to the latch circuit and configured to provide a first voltage at a first node and a second voltage at a second node at an equalizing stage. The first voltage is different from the second voltage.

Abstract: A method includes following operations: a delay line delaying a first clock signal by a delay time to generate an output signal; a controller delaying the output signal by a first time interval to generate a first signal; the controller delaying the first clock signal by a second time interval shorter than the first time interval to generate a second clock signal; and the controller controlling the delay line according to the first signal and the second clock signal to adjust the delay time. A delay locked loop device is also disclosed herein.

Abstract: The present disclosure provides functional test equipment for a device under test and method of testing the device under test. The functional test equipment includes a first power supply, a second power supply and a relay system. The first power supply is configured to generate a first supply voltage. The second power supply is configured to generate a second supply voltage different from the first supply voltage. The relay system is configured to electrically couple the first power supply or the second power supply to the device under test, wherein the first supply voltage is applied to the device under test for a first duration and the second supply voltage is applied to the device under test for a second duration less than the first duration.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a plurality of fuse elements, a reference resistor unit, a first conductive terminal, a first switching circuit, and a second switching circuit. Each of the plurality of fuse elements has a first terminal and a second terminal. The reference resistor unit is configured to receive a first power signal and electrically couple with the first terminal of each of the plurality of fuse elements. The first conductive terminal is configured to receive a second power signal and is electrically connected to the second terminal of each of the plurality of fuse elements.

Abstract: A temperature delay device includes a first thermal sensor, a second thermal sensor, an inverter, and a latch circuit. The first thermal sensor is configured to measure a first temperature of a chip to output a first input signal. The second thermal sensor is configured to measure a second temperature of the chip to output a second input signal. The inverter is coupled to the first thermal sensor, and is configured to reverse the first input signal so as to output a third input signal. The latch circuit is coupled to the inverter and the second thermal sensor, and is configured to output an output signal according to the second input signal and the third input signal. The first temperature is different from the second temperature.

Abstract: The present disclosure provides a method of testing a testing device with a ground noise. The method includes coupling a device under test in series between a source and a ground in an automatic test equipment, coupling a ground bounce generator in series between the device under test and the ground, coupling the testing device to the device under test, providing a current by the source through the device under test and the ground bounce generator, controlling the ground bounce generator to generate the ground noise, and collecting a performance result of the testing device in the automatic test equipment.

Abstract: The present application provides a semiconductor die with decoupling capacitors and a manufacturing method of the semiconductor die. The semiconductor die includes first bonding pads, second bonding pads, bond metals and decoupling capacitors. The first bonding pads are coupled to a power supply voltage. The second bonding pads are coupled to a reference voltage. The bond metals are disposed on central portions of the first and second bonding pads. The decoupling capacitors are disposed under the first and second bonding pads, and overlapped with peripheral portions of the first and second bonding pads. The decoupling capacitors are in parallel connection with one another. First terminals of the decoupling capacitors are electrically connected to the first bonding pads, and second terminals of the decoupling capacitors are electrically connected to the second bonding pads.

Abstract: A electronic module includes a printed circuit board (PCB) substrate, a controller substrate, a controller, a memory device, and a heat spreader. The controller is disposed on the controller substrate. The memory device is disposed on the PCB substrate. The heat spreader is disposed on the controller and the memory device, in which the heat spreader has a first portion on the controller and a second portion on the memory device, and the heat spreader has a first opening between the first portion and the second portion.

Abstract: The present application provides a semiconductor package and a manufacturing method for the semiconductor package. The semiconductor package includes a package substrate, a first semiconductor die, a second semiconductor die, a first encapsulant and a second encapsulant. The package substrate has a first side and a second side facing away from the first side, and the second side has a concave recessed from a planar portion of the second side. The first semiconductor die is attached to the first side of the package substrate. The second semiconductor die is attached to a recessed surface of the concave. The first encapsulant covers the first side of the package substrate and encapsulates the first semiconductor die. The second encapsulant fills up the concave and encapsulates the second semiconductor die.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first substrate including a center region and an edge region distal from the center region, a first circuit layer positioned on the first substrate, a center power pad positioned in the first circuit layer and above the center region, an edge power pad positioned in the first circuit layer, above the edge region, and electrically coupled to the center power pad, a redistribution power pattern positioned above the first circuit layer and electrically coupled to the center power pad, and an edge power via positioned between the edge power pad and the redistribution power pattern, and electrically connecting the edge power pad and the redistribution power pattern. The first substrate, the center power pad, the edge power pad, the redistribution power pattern, and the edge power via together configure a first semiconductor die.

Abstract: The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a package substrate, a bottom device die, an interposing package substrate and a top device die. The bottom device die is bonded to the package substrate. The interposing package substrate is located over the bottom device die and bonded to the package substrate. The top device die is bonded to the interposing package substrate form above the interposing package substrate.

Abstract: The present application provides a semiconductor package and a manufacturing method for the semiconductor package. The semiconductor package includes a package substrate, a first semiconductor die, a second semiconductor die, a first encapsulant and a second encapsulant. The package substrate has a first side and a second side facing away from the first side, and the second side has a concave recessed from a planar portion of the second side. The first semiconductor die is attached to the first side of the package substrate. The second semiconductor die is attached to a recessed surface of the concave. The first encapsulant covers the first side of the package substrate and encapsulates the first semiconductor die. The second encapsulant fills up the concave and encapsulates the second semiconductor die.

Abstract: The present application provides a method for manufacturing a semiconductor die. The method includes forming dielectric layers on a substrate; forming decoupling capacitors in the dielectric layers; forming first and second bonding pads on the dielectric layers, wherein the first bonding pads are coupled to a power supply voltage, the second bonding pads are coupled to a reference voltage, a group of the decoupling capacitors are located under one of the first bonding pads, first terminals of the group of the decoupling capacitors are electrically connected to the one of the first bonding pads, second terminals of the group of the decoupling capacitors are routed to one of the second bonding pads; and forming bond metals on the first and second bonding pads, wherein the decoupling capacitors are overlapped with the first and second bonding pads, and laterally surround portions of the dielectric layers overlapped with the bond metals.

Abstract: The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a package substrate, a bottom device die, an interposing package substrate and a top device die. The bottom device die is bonded to the package substrate. The interposing package substrate is located over the bottom device die and bonded to the package substrate. The top device die is bonded to the interposing package substrate form above the interposing package substrate.

Abstract: A semiconductor package includes a first semiconductor die, a first substrate, a second semiconductor die, and a second substrate. The first substrate is disposed on the first semiconductor die and includes a plurality of first metal line layers vertically spaced apart from each other, and each of the first metal line layers is electrically connected to one of the followings: a ground source and a plurality of power sources of different types. The second semiconductor die is disposed on the first substrate. The second substrate is disposed on the second semiconductor die and includes a plurality of second metal line layers vertically spaced apart from each other, and each of the second metal line layers is electrically connected to one of the followings: the ground source and the power sources of different types.

Abstract: A memory package structure includes a substrate, a memory chip and a plurality of resistors. The substrate has a plurality of pins. The pins include a plurality of data pins used to transfer data signal. The memory chip is located on the substrate. A plurality of bonding pads is located on the memory chip. The bonding pads include a plurality of data pads used to receive the data signal from data pins or transfer the data signal from the memory chip. The resistors is located on the substrate. Each data pad is connected to a corresponding one of the data pins through a corresponding one of the resistors.

Abstract: The present disclosure provides a device die, a die assembly and an electronic system. The device die includes a package and a plurality of transfer pads disposed on a functional surface of the package. The transfer pads are divided into a plurality of segments electrically isolated from each other. In an adjacent pair of transfer pads, there is only one electrical connection between the transfer pads, comprising one segment in one transfer pad electrically connected to one segment in the other transfer pad. The die assembly includes a pair of device dies stacked in a stepped configuration. The electronic system includes a supporting member having at least one metallic layer, and a plurality of device dies disposed on the supporting member and mechanically and electrically coupled to the metallic layer by a plurality of conductive strings.

Abstract: The present disclosure provides a method of testing a testing device with a ground noise. The method includes coupling a device under test in series between a source and a ground in an automatic test equipment, coupling a ground bounce generator in series between the device under test and the ground, coupling the testing device to the device under test, providing a current by the source through the device under test and the ground bounce generator, controlling the ground bounce generator to generate the ground noise, and collecting a performance result of the testing device in the automatic test equipment.