Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: A transmittable lighting device is provided. The transmittable lighting device includes two substrates, a transmittable layer, two polarizers and a light source. The two substrates are respectively electrically connected to a voltage supply. A switchable electric field is provided between the two substrates, and two alignment directions of the two substrates are orthogonal to each other. The transmittable layer is located between the two substrates and has a plurality of liquid crystal molecules. Each of the plurality of liquid crystal molecule is arranged along the alignment direction of the substrate nearby, and the plurality of liquid crystal molecules is arranged in a 90-degree twisted arrangement. The two polarizers are located at two outer surfaces of the two substrates, respectively. Each polarizer has a polarization direction parallel to the alignment direction of the substrate on the same outer surface. The light source emits a lateral light entering the transmittable layer laterally.

Abstract: Disclosures of the present invention describe a halide semiconductor memristor that is suitable for being as an artificial synapse. The halide semiconductor memristor comprises a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film Moreover, a variety of experimental data have proved that, this halide semiconductor memristor is indeed suitable for being adopted as a plurality of artificial synapses that are used in manufacture of a neuromorphic device, and exhibits many advantages, including: capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the switching resistance states.

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: A control method of displayed picture for a display includes: displaying a displayed picture, wherein the displayed picture includes a first picture area and a second picture area, the first picture area displays an image signal provided by a first host, the second picture area displays an image signal provided by a second host; moving a cursor in the displayed picture to a first boundary of the second picture area where the cursor has first positioning coordinates; dragging the first boundary by the cursor towards the first picture area, such that the cursor is moved to second positioning coordinates; and updating an appearance of the second picture area according to the second positioning coordinates.

Abstract: A filtering circuit for filtering a pulse width modulated (PWM) signal includes a D flip-flop having an input terminal configured to be coupled to a logic high signal and having an output terminal coupled to an output terminal of the filtering circuit; and a circuit coupled between an input terminal of the filtering circuit and the D flip-flop, the circuit configured to, for a first pulse of the PWM signal having a duty cycle within a pre-determined range: generate a positive pulse at a clock terminal of the D flip-flop as a clock signal of the D flip-flop; and generate a negative pulse at a reset terminal of the D flip-flop as a reset signal of the D flip-flop, wherein a duration between a rising edge of the positive pulse and a falling edge of the negative pulse is equal to a duration of the first pulse of the PWM signal.

Abstract: Modified release formulations, such as solid oral dosage forms comprising a core composition comprising Compound (I) and/or a pharmaceutically acceptable salt thereof; a sub-coating layer coating the core composition, said sub-coating layer comprising a polyvinyl alcohol and/or a hydroxypropyl methyl cellulose; and an enteric coating layer encapsulating the sub-coating layer and the core composition, said enteric coating layer comprising at least one polymer selected from an acrylic/methacrylic/ethacrylic acid homopolymer and copolymers thereof, a cellulose derivative, and a polyvinylpyrrolidone, and methods of administration of a Bruton's tyrosine kinase (BTK) inhibitor using said formulations.

Abstract: A circuit includes a field effect transistor having a gate driven via a drive signal. The field effect transistor has a drain-source voltage drop indicative of the intensity of a current flowing in the current path through the field effect transistor. The circuit also includes a pair of sensing transistors that include a first sensing field effect transistor arranged with its drain and gate coupled with the drain and the gate of the field effect transistor, respectively, and a second sensing field effect transistor having a gate configured for receiving a replica of the drive signal. The second sensing field effect transistor is arranged with its current path in series with the current path of the first sensing field effect transistor. A sensing signal at a sensing node is indicative of the current intensity flowing in the current path of the field effect transistor.

Abstract: Disclosures of the present invention describe a halide semiconductor memristor that is suitable for being as an artificial synapse. The halide semiconductor memristor comprises a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film Moreover, a variety of experimental data have proved that, this halide semiconductor memristor is indeed suitable for being adopted as a plurality of artificial synapses that are used in manufacture of a neuromorphic device, and exhibits many advantages, including: capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the switching resistance states.

Abstract: The present invention provides an artificial tooth comprising a plurality of internal crown members, a plurality of connecting rods, at least one external crown member, at least one spring clip. The internal crown members are respectively fitted to a plurality of abutments. Each of the connecting rods connects to at least two of the internal crown members. The external crown member has at least one groove therein, and the groove is formed to correspond to the internal crown members. The spring clip clamps a protrusion block formed on the internal crown members or on an adjacent tooth. Further, the spring clip comprises two spring arms opposite each other, and each of two spring arms has a fixed end and a movable end opposite to fixed end. Each of two spring arms connects to the fixed end and the movable end, and fixed end is fixed inside the internal crown members.

Abstract: A filtering circuit for filtering a pulse width modulated (PWM) signal includes a D flip-flop having an input terminal configured to be coupled to a logic high signal and having an output terminal coupled to an output terminal of the filtering circuit; and a circuit coupled between an input terminal of the filtering circuit and the D flip-flop, the circuit configured to, for a first pulse of the PWM signal having a duty cycle within a pre-determined range: generate a positive pulse at a clock terminal of the D flip-flop as a clock signal of the D flip-flop; and generate a negative pulse at a reset terminal of the D flip-flop as a reset signal of the D flip-flop, wherein a duration between a rising edge of the positive pulse and a falling edge of the negative pulse is equal to a duration of the first pulse of the PWM signal.

Abstract: An ambient-light-sensing hole structure package and a method of manufacturing the same are provided. The ambient-light-sensing hole structure package includes a transparent cover, a decorative layer, a porous structure layer, and an optical adhesive. The transparent cover has a surface. The decorative layer is disposed on the surface and the decorative layer has an opening that exposes a portion of the surface. The porous structure layer is disposed on one side of the decorative layer and the porous structure layer covers the portion of the surface. The porous structure layer includes a plurality of through holes, and the through holes overlap with the opening. The optical adhesive is interposed between the decorative layer and the porous structure layer.

Abstract: A driving module including a circuit board, a rotating member rotatably disposed on the circuit board, and a power source mechanically linked to the rotating member and electrically connected to the control circuit is provided. The circuit board has a control circuit, a first conductive portion, and a plurality of second conductive portions. The first conductive portion and the second conductive portions are electrically connected to the control circuit respectively. The rotating member has a first abutment and a second abutment electrically connected to each other. The power source is controlled by the control circuit to rotate the rotating member relative to the circuit board. The first abutment constantly abuts the first conductive portion, and the second conductive portions are on a rotating path of the second abutment. A restoration method and an imaging device are also provided.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A light-emitting wireless charging structure includes a base, a wireless charging module, a light-emitting element and an upper cover. The wireless charging module is disposed on the base. The light-emitting element is disposed on the base adjacent to the wireless charging module. The upper cover covers the wireless charging module and the light-emitting element. The upper cover has a lower surface facing the wireless charging module and an upper surface opposite to the bottom surface. When the light-emitting element emits light, light coming from the light-emitting element passes through the upper cover and forms a mark on the upper surface to indicate the position of the wireless charging module. When the light-emitting element is turn off or kept in an off state, either the mark that has been formed on the upper surface disappears therefrom or no any mark is ever shown on the top surface.

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: A touch panel capable of being simply manufactured includes a foldable substrate, a plurality of touch driving electrodes on the substrate, and a plurality of touch sensing electrodes on the substrate. The substrate includes two laminated layers achieved by folding. The touch driving electrodes are on one of the two laminated layers and the touch sensing electrodes are on the other of the two laminated layers. The touch driving electrodes and the touch sensing electrodes are formed by a same conductive layer on a surface of the substrate.

Abstract: The touch panel includes a transparent substrate, a first touch-sensing electrode structure, a second touch-sensing electrode structure, and a patterned metal layer. The transparent substrate has a touch-sensing region and a peripheral region adjacent to at least one edge of the touch-sensing region. The first touch-sensing electrode structure is disposed on the touch-sensing region of the transparent substrate. The second touch-sensing electrode structure is positioned over the touch-sensing region and is configured to form at least one capacitor with the first touch-sensing electrode structure. The patterned metal layer has a plurality of first through holes located in the peripheral region and is extended on a level the same as the first touch-sensing electrode structure or the second touch-sensing electrode structure.

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.