Abstract: A mounting structure is provided between internal and external crowns of a prosthetic device, in which a tenon-mortise type engagement is formed for fixing the crowns. The internal crown forms an internal coupling section and the external crown forms an external coupling section that corresponds to the internal coupling section. The external coupling section includes a liftable structure, whereby when the external crown is fit to the internal crown, the liftable structure is slightly bulged outward to allow for easy movement of the external crown for fitting to the internal crown. With the inter-engagement between the internal and external coupling sections, the external crown is set stably and securely on the internal crown and problems of insufficient or excessive fitting tightness between the crowns are eliminated or alleviated.

Abstract: A method of forming a FinFET device is provided. In one embodiment, a fin is formed on a substrate. A gate structure is formed over the fin, the gate structure having a dielectric layer and a conformal first polysilicon layer formed above the dielectric layer. An etch stop layer is formed above the first polysilicon layer and thereafter a second polysilicon layer is formed above the etch stop layer. The second polysilicon layer and the etch stop layer are removed. A metal layer is formed above the first polysilicon layer. The first polysilicon layer is reacted with the metal layer to silicide the first polysilicon layer. Any un-reacted metal layer is thereafter removed and source and drain regions are formed on opposite sides of the fin.

Abstract: A light emitting diode (LED) illuminant system, a manufacture method thereof, and a backlight module using the same are provided. The LED illuminant system includes a plurality of white light illuminants and at least one green light illuminant mixed in the white light illuminants. A light power ratio of the green light illuminant to the white light illuminants is in between ? to 1/20. The color temperature of the whole illuminant system will be enhanced to a certain extent by mixing the green light illuminant and the white light illuminants. The manufacture method includes the following steps: obtaining a transmission spectrum of the white light illuminants; analyzing the transmission spectrum to determine n supplemental amount of a green light; and disposing at least one green illuminant in accordance with the supplemental amount of the green light.

Abstract: A detachment-prevented removable double-crown prosthetic appliance includes an internal crown member, which has an outside surface to which two resilient retention clamping strips are mounted, each of the resilient retention clamping strips including a root section that is fixed to the outside surface of the internal crown member and a spring section extending from the root section, the spring sections of the resilient retention clamping strips being spaced by a gap that has a reduced neck portion forming a pass; and an external crown member, which is removably mounted to the internal crown member and has a lower inner portion forming a fitting chamber for removably fitting over the internal crown member, the fitting chamber having an inside surface that forms a retention block that is engageable with the resilient retention clamping strips so as to securely but removably couple the external crown member to the internal crown member.

Abstract: A reusable nanowire field effect transistor for detecting biomolecular interactions. The field effect transistor contains nanowire covalently linked to a docking molecule, which is capable of binding to an anchor molecule in a reversible manner, i.e., at an association constant of 105 to 109 M?1.

Abstract: A method for fabricating a integrated circuit is disclosed. An exemplary method includes providing a substrate; forming a hard mask layer over the substrate; forming a patterned photoresist layer over the hard mask layer, such that portions of the hard mask layer are exposed; performing a dry etching process to remove the exposed portions of the hard mask layer; removing the patterned photoresist layer using at least one of a nitrogen plasma ashing and a hydrogen plasma ashing; and performing a wet etching process to remove remaining portions of the hard mask layer.

Abstract: A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.

Abstract: A method for fabricating a integrated circuit is disclosed. An exemplary method includes providing a substrate; forming a hard mask layer over the substrate; forming a patterned photoresist layer over the hard mask layer, such that portions of the hard mask layer are exposed; performing a dry etching process to remove the exposed portions of the hard mask layer; removing the patterned photoresist layer using at least one of a nitrogen plasma ashing and a hydrogen plasma ashing; and performing a wet etching process to remove remaining portions of the hard mask layer.

Abstract: A method of determining driving currents of a backlight module includes: disposing the backlight module onto a base; defining a plurality of areas from a top area to a bottom are of the backlight module; and reducing the driving current of the area that is situated further from the base.

Abstract: A method of forming a FinFET device is provided. In one embodiment, a fin is formed on a substrate. A gate structure is formed over the fin, the gate structure having a dielectric layer and a conformal first polysilicon layer formed above the dielectric layer. An etch stop layer is formed above the first polysilicon layer and thereafter a second polysilicon layer is formed above the etch stop layer. The second polysilicon layer and the etch stop layer are removed. A metal layer is formed above the first polysilicon layer. The first polysilicon layer is reacted with the metal layer to silicide the first polysilicon layer. Any un-reacted metal layer is thereafter removed and source and drain regions are formed on opposite sides of the fin.

Abstract: A method of fabricating a semiconductor device is provided. In one embodiment, a gate structure is formed on a substrate, the gate structure having a gate dielectric layer and a first polysilicon layer formed above the gate dielectric layer. A passivation layer is formed above the first polysilicon layer. A second polysilicon layer is formed above the passivation layer. The second polysilicon layer and the passivation layer are removed. A metal layer is formed above the first polysilicon layer. The first polysilicon layer is reacted with the metal layer to silicide the first polysilicon layer. Any un-reacted metal layer is thereafter removed.

Abstract: A charge pump circuit includes a first power transistor selectively actuated by a first control signal to deliver relatively higher amounts of current to a capacitor and a second non-power transistor connected in parallel with the first power transistor and selectively actuated by a second control signal to deliver relatively lower amounts of current to the capacitor. The charge pump circuit includes a pumped voltage output that is sensed to generate a sensed voltage output. A comparison circuit compares the sensed voltage output to a threshold voltage. A logic circuit receives an output of the comparison circuit and enables the first power transistor and disables the second non-power transistor in a first mode of operation if the comparison is not satisfied. The logic circuit further disables the first power transistor and enables the second non-power transistor in a second mode of operation if the comparison is satisfied.

Abstract: The present disclosure provides a method for fabricating a semiconductor device. The method includes forming first, second, third, and fourth gate structures on a semiconductor substrate, each gate structure having a dummy gate, removing the dummy gate from the first, second, third, and fourth gate structures, thereby forming first, second, third, and fourth trenches, respectively, forming a metal layer to partially fill in the first, second, third, and fourth trenches, forming a first photoresist layer over the first, second, and third trenches, etching a portion of the metal layer in the fourth trench, removing the first photoresist layer, forming a second photoresist layer over the second and third trenches, etching the metal layer in the first trench and the remaining portion of the metal layer in the fourth trench, and removing the second photoresist layer.

Abstract: A backlight unit usable in an LCD for dynamically expanding color gamut of the LCD. In one embodiment, the backlight unit has a plurality of light emitting elements, and a control unit electrically coupled with the plurality of light emitting elements for controlling intensity of light emitting from each of the plurality of light emitting elements in response to a frame of image data applied to the plurality of pixels, wherein the control unit is configured such that when the frame of image data applied to the plurality of pixels is in a red color, a green color, or a blue color, the intensity of light from the red color, the green color, or the blue color emitting from each of the plurality of light emitting elements is adjusted to its corresponding maximal value so as to expand the red, the green, or the blue area of the color gamut of the LCD panel accordingly.

Abstract: The invention relates to a controlled release formulation for an oral cytokine inhibitor of interleukin-1 beta converting enzyme.

Abstract: A method and device in which the light emitted from a color sub-pixel in an organic light emitted display panel can be the sum of two or more light beams of slightly different colors in the same wavelength range. The difference in color is the result of difference in the length of the resonant cavity within the same color sub-pixel. In the manufacturing process, the non-uniformity in the layer thickness can cause a shift in the color coordinates in the color sub-pixels. The color shift when the width of the color spectrum is narrow is more noticeable. By broadening the width of the color spectrum, the color shift would become less appreciable. Thus, broadening the width of the color spectrum would ease the strict requirements in manufacturing.

Abstract: A backlight source has different luminescence types of electroluminescence devices and coordinates at least one of the arrangement positions and the arrangement spacing of the electroluminescence devices to improve the brightness uniformity of the backlight source and make the mixed light better. Moreover, because of the brightness uniformity promotion, the overall thickness of backlight module can be reduced.

Abstract: A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.

Abstract: A shoe insole is injection molded from composite materials, the composite materials includes 62%-80% by weight of nylon and 20%-38% by weight of short fiber material.

Abstract: Alight guide plate assembly for a backlight module is provided. The light guide plate assembly includes a plurality of light guide plates. Each light guide plate has a top face, at least one side face, and at least one connecting part. The connecting part is formed on the side face of the light guide plate. The connecting part has a connecting face, wherein the adjacent connecting faces are connected to each other. The top faces of the plurality of light guide plates are coplanar. A distance between the connecting face and the top face is ? to 1/20 of the thickness of the light guide plate.