Abstract: A diffusion plate of a backlight structure and a display device using the same are provided. The diffusion plate is used in the backlight structure having several light emitting diodes. The diffusion plate includes a main body with many depression structures positioned on a surface of the main body. The surface faces the light emitting diodes. Each depression structure is positioned above the corresponding light emitting diode and includes an inclined surface. An inclined angle is formed between each inclined surface and a central axis of the corresponding light emitting diode for refracting the light emitted by the corresponding light emitting diode.

Abstract: A method for fabricating a integrated circuit with improved performance is disclosed. The method comprises providing a substrate; forming a hard mask layer over the substrate; forming protected portions and unprotected portions of the hard mask layer; performing a first etching process, a second etching process, and a third etching process on the unprotected portions of the hard mask layer, wherein the first etching process partially removes the unprotected portions of the hard mask layer, the second etching process treats the unprotected portions of the hard mask layer, and the third etching process removes the remaining unprotected portions of the hard mask layer; and performing a fourth etching process to remove the protected portions of the hard mask layer.

Abstract: A cleaning sequence usable in semiconductor manufacturing efficiently cleans semiconductor substrates while preventing chemical oxide formation thereon. The sequence includes the sequence of: 1) treating with an HF solution; 2) treating with pure H2SO4; 3) treating with an H2O2 solution; 4) a DI water rinse; and 5) treatment with an HCl solution. The pure H2SO4 solution may include an H2SO4 concentration of about ninety-eight percent (98%) or greater. After the HCl solution treatment, the cleaned surface may be a silicon surface that is free of a chemical oxide having a thickness of 5 angstroms or greater. The invention finds particular advantage in semiconductor devices that utilize multiple gate oxide thicknesses.

Abstract: A method is provided for fabricating a semiconductor device. The method includes removing a silicon material from a gate structure located on a substrate through a cycle including: etching the silicon material to remove a portion thereof, where the substrate is spun at a spin rate, applying a cleaning agent to the substrate, and drying the substrate; and repeating the cycle, where a subsequent cycle includes a subsequent spin rate for spinning the substrate during the etching and where the subsequent spin rate does not exceed the spin rate of the previous cycle.

Abstract: The present invention discloses synthesis of 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamine. First, 2,2?-diamino-9,9?-spirobifluorene, a Pd-catalyst as auxiliary and aryl halide BX are provided, wherein X is selected from the group consisting of: Cl, Br and I, B comprises one of the following group: aryl moiety, hetero cycle, multiple fused ring, multiple fused ring with hetero atom(s). Next, a substitution reaction is performed to react the 2,2?-diamino-9,9?-spirobifluorene with the aryl halide BX to produce the 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamines. In addition, the present invention discloses organic light emitting devices comprising hole transporting material comprising 2,2?-bis(N,N-disubstituted amino)-9,9?-spirobifluorenes.

Abstract: A data synchronization apparatus is provided. The data synchronization apparatus comprises a first-in first-out buffer (FIFO buffer), a control circuit and a phase-locked loop (PLL). The FIFO buffer receives and stores a plurality of data and provides a FIFO adjustment signal according to the number of the data stored in the FIFO buffer. The data stored in the FIFO buffer are sent out to an external device at a clock rate derived from a master clock signal. The control circuit provides a PLL adjustment signal according to the FIFO adjustment signal. The PLL provides the master clock signal and adjusts the frequency of the master clock signal in response to the PLL adjustment signal.

Abstract: The present disclosure provides a method for fabricating a semiconductor device. The method includes forming first, second, third, and fourth gate structures on a semiconductor substrate, each gate structure having a dummy gate, removing the dummy gate from the first, second, third, and fourth gate structures, thereby forming first, second, third, and fourth trenches, respectively, forming a metal layer to partially fill in the first, second, third, and fourth trenches, forming a first photoresist layer over the first, second, and third trenches, etching a portion of the metal layer in the fourth trench, removing the first photoresist layer, forming a second photoresist layer over the second and third trenches, etching the metal layer in the first trench and the remaining portion of the metal layer in the fourth trench, and removing the second photoresist layer.

Abstract: A side-type backlight module includes a light guide plate and a plurality of light emitting diode (LED) sources. The light guide plate includes a side. The LED sources are disposed on the side, in which two successive LED sources are spaced by a pitch. It is varied to arrange each pitch between two successive LED sources. Moreover, a method for operating the side-type backlight module is disclosed in the specification.

Abstract: Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

Abstract: A light-emitting unit includes a bounding frame, a first light-emitting element, a second light-emitting element, and a first reflecting sheet. The first light-emitting element and the second light-emitting element are disposed in the bounding frame, and emit light in different directions. The first reflecting sheet is disposed on the bounding frame, and has a reflecting surface on one side away from the bounding frame.

Abstract: A light emitting diode (LED) illuminant system, a manufacture method thereof, and a backlight module using the same are provided. The LED illuminant system includes a plurality of white light illuminants and at least one green light illuminant mixed in the white light illuminants. A light power ratio of the green light illuminant to the white light illuminants is in between 1/5 to 1/20. The color temperature of the whole illuminant system will be enhanced to a certain extent by mixing the green light illuminant and the white light illuminants. The manufacture method includes the following steps: obtaining a transmission spectrum of the white light illuminants; analyzing the transmission spectrum to determine n supplemental amount of a green light; and disposing at least one green illuminant in accordance with the supplemental amount of the green light.

Abstract: A backlight unit usable in an LCD for dynamically expanding color gamut of the LCD. In one embodiment, the backlight unit has a plurality of light emitting elements, and a control unit electrically coupled with the plurality of light emitting elements for controlling intensity of light emitting from each of the plurality of light emitting elements in response to a frame of image data applied to the plurality of pixels, wherein the control unit is configured such that when the frame of image data applied to the plurality of pixels is in a red color, a green color, or a blue color, the intensity of light from the red color, the green color, or the blue color emitting from each of the plurality of light emitting elements is adjusted to its corresponding maximal value so as to expand the red, the green, or the blue area of the color gamut of the LCD panel accordingly.

Abstract: A data synchronization apparatus is provided. The data synchronization apparatus comprises a first-in first-out buffer (FIFO buffer), a control circuit and a phase-locked loop (PLL). The FIFO buffer receives and stores a plurality of data and provides a FIFO adjustment signal according to the number of the data stored in the FIFO buffer. The data stored in the FIFO buffer are sent out to an external device at a clock rate derived from a master clock signal. The control circuit provides a PLL adjustment signal according to the FIFO adjustment signal. The PLL provides the master clock signal and adjusts the frequency of the master clock signal in response to the PLL adjustment signal.

Abstract: A diffusion plate of a backlight structure and a display device using the same are provided. The diffusion plate is used in the backlight structure having several light emitting diodes. The diffusion plate includes a main body with many depression structures positioned on a surface of the main body. The surface faces the light emitting diodes. Each depression structure is positioned above the corresponding light emitting diode and includes an inclined surface. An inclined angle is formed between each inclined surface and a central axis of the corresponding light emitting diode for refracting the light emitted by the corresponding light emitting diode.

Abstract: The invention relates to a controlled release formulation for an oral cytokine inhibitor of interleukin-1 beta converting enzyme.

Abstract: A method for stripping photoresist and cleaning a semiconductor substrate include a high temperature stripping process in a freshly mixed SPM solution followed by cleaning in a water soluble organic co-solvent such as acetone, IPA, methanol, ethanol, butanol, or DMSO. The substrate may undergo back side heating during the SPM solution stripping process and may optionally use nanospraying techniques to direct the water soluble organic co-solvent to the substrate. The method completely strips plasma hardened photoresist using only wet chemical operations.

Abstract: A backlight source has different luminescence types of electroluminescence devices and coordinates at least one of the arrangement positions and the arrangement spacing of the electroluminescence devices to improve the brightness uniformity of the backlight source and make the mixed light better. Moreover, because of the brightness uniformity promotion, the overall thickness of backlight module can be reduced.

Abstract: A light-emitting unit includes a bounding frame, a first light-emitting element, a second light-emitting element, and a first reflecting sheet. The first light-emitting element and the second light-emitting element are disposed in the bounding frame, and emit light in different directions. The first reflecting sheet is disposed on the bounding frame, and has a reflecting surface on one side away from the bounding frame.

Abstract: The present invention uses different frequencies to drive the LED strips in the back-lighting source so that the spatial uniformity of the back-lighting source as well as the color levels in the source can be monitored and adjusted. Each individual strip is assigned to a different frequency. Alternatively, the strips are divided into groups and each group is assigned to a different frequency. A group may comprise two or more strips. Furthermore, some groups may have more strips than the other groups and the number of LEDs in one strip may be different from the number in other strips. The brightness uniformity and the color levels in the back-lighting source are sensed by one or more groups of color sensors in R, G and B. The assignment of driving frequencies can be based on the location of the strips.

Abstract: The present invention discloses synthesis of 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamine. First, 2,2?-diamino-9,9?-spirobifluorene, a Pd-catalyst as auxiliary and aryl halide BX are provided, wherein X is selected from the group consisting of: Cl, Br and I, B comprises one of the following group: aryl moiety, hetero cycle, multiple fused ring, multiple fused ring with hetero atom(s). Next, a substitution reaction is performed to react the 2,2?-diamino-9,9?-spirobifluorene with the aryl halide BX to produce the 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamines. In addition, the present invention discloses organic light emitting devices comprising hole transporting material comprising 2,2?-bis(N,N-disubstituted amino)-9,9?-spirobifluorenes.