Patents by Inventor Xiangjin Xie
Xiangjin Xie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967523Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: GrantFiled: October 11, 2021Date of Patent: April 23, 2024Assignee: Applied Materials, Inc.Inventors: Xiangjin Xie, Kevin Kashefi
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Patent number: 11939666Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.Type: GrantFiled: June 1, 2020Date of Patent: March 26, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Xiangjin Xie, Carmen Leal Cervantes, Feng Chen, Lu Chen, Wenjing Xu, Aravind Kamath, Cheng-Hsiung Matthew Tsai, Tae Hong Ha, Alexander Jansen, Xianmin Tang
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Patent number: 11848229Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: GrantFiled: October 21, 2022Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
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Publication number: 20230317516Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a metal-carbonyl containing precursor to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: July 14, 2022Publication date: October 5, 2023Applicant: Applied Materials, Inc.Inventors: Muthukumar Kaliappan, Michael Haverty, Bhaskar Jyoti Bhuyan, Mark Saly, Aaron Dangerfield, Michael L. McSwiney, Feng Q. Liu, Xiangjin Xie
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Patent number: 11756784Abstract: A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.Type: GrantFiled: July 5, 2022Date of Patent: September 12, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Carmen Leal Cervantes, Alexander Jansen, Xiangjin Xie
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Publication number: 20230230806Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a processing chamber and a second input configured to receive an RF delivered power from a matching network connected between the RF power source and the processing chamber. The RF power delivery compensation circuit calculates an RF forward power compensation factor based on the RF forward power and the RF delivered power for adjusting the RF forward power delivered to the processing chamber during operation.Type: ApplicationFiled: January 5, 2022Publication date: July 20, 2023Inventors: Yida LIN, Rui LI, Martin Lee RIKER, Haitao WANG, Noufal Kappachali, Xiangjin XIE
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Publication number: 20230197508Abstract: Methods for selectively depositing a self-assembled monolayer (SAM) on metallic surfaces are disclosed. Some embodiments of the disclosure utilize phenanthroline or a phenanthroline derivative to form the self-assembled monolayer. Some embodiments selective form the self-assembled monolayer on tungsten or molybdenum. Some embodiments utilize the self-assembled monolayer to selectively deposit on dielectric surfaces over metallic surfaces.Type: ApplicationFiled: December 17, 2021Publication date: June 22, 2023Applicant: Applied Materials, Inc.Inventors: Xiangjin Xie, Kevin Kashefi
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Publication number: 20230132200Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: October 21, 2022Publication date: April 27, 2023Applicant: Applied Materials, Inc.Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
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Publication number: 20230126055Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: October 21, 2022Publication date: April 27, 2023Applicant: Applied Materials, Inc.Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
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Publication number: 20230122969Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Inventors: Shirish PETHE, Fuhong ZHANG, Joung Joo LEE, Rui LI, Xiangjin XIE, Xianmin TANG
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Publication number: 20230115211Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: October 11, 2021Publication date: April 13, 2023Applicant: Applied Materials, Inc.Inventors: Xiangjin Xie, Kevin Kashefi
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Patent number: 11562925Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.Type: GrantFiled: September 29, 2020Date of Patent: January 24, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Shirish Pethe, Fuhong Zhang, Joung Joo Lee, Rui Li, Xiangjin Xie, Xianmin Tang
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Publication number: 20230017383Abstract: Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.Type: ApplicationFiled: July 14, 2021Publication date: January 19, 2023Inventors: Bencherki MEBARKI, Joung Joo LEE, Komal GARDE, Kishor Kumar KALATHIPARAMBIL, Xianmin TANG, Xiangjin XIE, Rui LI
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Patent number: 11527437Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.Type: GrantFiled: September 15, 2020Date of Patent: December 13, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Lanlan Zhong, Fuhong Zhang, Gang Shen, Feng Chen, Rui Li, Xiangjin Xie, Tae Hong Ha, Xianmin Tang
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Publication number: 20220364230Abstract: Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the layer to a plasma. The exposed layer can be deposited by an atomic layer deposition process, and can be, for example, a tantalum nitride layer. The bias power can be up to 500 watts of RF power at a pulse frequency of about 1 Hz to about 10 kHz. The bias power can be pulsed uniformly or at multiple different levels.Type: ApplicationFiled: April 29, 2022Publication date: November 17, 2022Inventors: Rui LI, Xiangjin XIE, Xianmin TANG, Anthony Chih-Tung CHAN
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Publication number: 20220336207Abstract: A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.Type: ApplicationFiled: July 5, 2022Publication date: October 20, 2022Inventors: Carmen LEAL CERVANTES, Alexander JANSEN, Xiangjin XIE
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Publication number: 20220328348Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.Type: ApplicationFiled: June 29, 2022Publication date: October 13, 2022Applicant: Applied Materials, Inc.Inventors: Rui Li, Xiangjin Xie, Tae Hong Ha, Xianmin Tang, Lu Chen
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Publication number: 20220293392Abstract: Embodiments of coils for use in process chambers are provided herein. In some embodiments, a coil for use in a process chamber includes: a coil body having a first end portion and an opposing second end portion coupled to the first end portion via a central portion, the coil body having an annular shape with the first end portion and the second end portion disposed adjacent to each other and spaced apart by a gap forming a discontinuity in the annular shape, wherein at least one of the first end portion and the second end portion have a height that is greater than a height of the central portion; and a plurality of hubs coupled to an outer sidewall of the coil body and configured to facilitate coupling the coil to the process chamber, wherein a hub of the plurality of hubs is coupled to each of the first end portion and the second end portion and configured to couple the coil to a power source.Type: ApplicationFiled: March 4, 2022Publication date: September 15, 2022Inventors: Rui Li, Andrew Tomko, Xiangjin Xie, Goichi Yoshidome
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Patent number: D1009816Type: GrantFiled: August 29, 2021Date of Patent: January 2, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Martin Lee Riker, Keith A. Miller, Fuhong Zhang, Luke Vianney Varkey, Kishor Kumar Kalathiparambil, Xiangjin Xie
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Patent number: D1024149Type: GrantFiled: December 16, 2022Date of Patent: April 23, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Martin Lee Riker, Luke Vianney Varkey, Xiangjin Xie