Abstract: Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation.

Abstract: A drying apparatus is based on supercritical fluid. The drying apparatus includes: an upper cover; a base, arranged below the upper cover and the base and the upper cover; a substrate tray, arranged on the base; a first fluid supply tube, arranged on the top wall of the upper cover; a fluid disturbance plate, arranged below the first fluid supply tube; a second fluid supply tube, arranged on a first side wall of the upper cover; and a fluid discharge tube, arranged on a second side wall of the upper cover. The inner space of the closed chamber can be minimized by using the drying apparatus, thereby saving the usage amount of the supercritical fluid, and reducing the usage costs.

Abstract: The present invention provides a hypoxia-triggered artificial transcription factor (HATF), and further provides a hypoxia-triggered transcription control system. The transcription control system comprises a nucleic acid sequence encoding the HATF, and a recognition element (RE). The hypoxia-triggered transcription control system comprises two sets of transcription control units linked upstream and downstream, wherein the upstream transcription control unit comprises a hypoxia-triggered transcription reaction element for controlling the HATF and a nucleic acid sequence encoding the HATF, and the downstream transcription control unit comprises an RE and a gene of interest. Co-regulation by the artificial transcription factor HATF and the recognition element RE can increase the expression of the gene of interest by a factor of one hundred.

Abstract: A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning.

Abstract: A method for cleaning a substrate with pattern structures comprises the following steps: using gas-liquid atomization to clean a substrate surface (601); using TEBO megasonic to clean the substrate surface (602); and drying the substrate (603). The TEBO megasonic cleaning is used to remove small size particles on the substrate and the gas-liquid atomization cleaning is used to remove large size particles on the substrate. The method enables achieving an effect of cleaning the substrate without or with less device damage. A substrate cleaning apparatus is also provided.

Abstract: Related to is a method for cleaning an in-process wafer. The method includes causing the in-process wafer to be rotated, causing function water to be applied to a surface of the rotated in-process wafer to generate a flowing function water film on the rotated in-process wafer, causing the surface of the in-process wafer to be cleaned by a sonic device for a first period, causing the sonic device to be lifted and/or rotation speed of the rotated in-process wafer to be accelerated to separate the sonic device from the flowing function water film, causing the function water to be applied to the surface of the rotated in-process wafer for a second period after separating the sonic device from the function water film, and causing the surface of the in-process wafer to be dried.

Abstract: The present invention relates to novel compounds of Formulae I-XI: wherein each A, A?, Q, Q?, W, Rw, Y, and Z, and -- are as defined herein, which inhibit NOD-like receptor protein 3 (NLRP3) inflammasome activity. The invention further relates to the processes for their preparation, pharmaceutical compositions and medicaments containing them, and their use in the treatment of diseases and disorders mediated by NLRP3.

Abstract: The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a passivation layer covering the first gate conductor, and a second gate conductor disposed on the passivation layer and on a second region of the second nitride semiconductor layer, wherein the first region is laterally spaced apart from the second region.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time ?1, or comparing the detected power off time with a preset time ?2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time

Abstract: Embodiments of the present disclosure provide an information processing method and apparatus, a device, an electronic device, a computer-readable storage medium, a computer program product, and a computer program. The method includes: acquiring comment data corresponding to at least one target media content, where the target media content is media content that has an association with a preset object; acquiring at least one question-and-answer content related to the preset object in the comment data, where the question-and-answer content includes question content and at least one answer content for the question content; aggregating and displaying the at least one question-and-answer content on an interface associated with the preset object.

Abstract: The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor, a first conductive terminal and a second conductive terminal disposed on a second region of the second nitride semiconductor layer, and a resistor formed in the first nitride semiconductor layer and electrically connected between the first conductive terminal and the second conductive terminal, wherein the resistor comprises at least one conductive region.

Abstract: A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.

Abstract: Provided herein are compounds of Formula (I): and forms thereof, including compositions thereof and uses therewith for treating spinal muscular atrophy.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Abstract: A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer and includes a first pattern and a second pattern which are spaced apart from each other. The source pad is immediately above the first metal layer, the second metal layer, and the first pattern of the third metal layer and is electrically coupled with the nitride-based transistor. The drain pad is immediately above the first metal layer, the second metal layer, and the second pattern of the third metal layer and is electrically coupled with the nitride-based transistor.

Abstract: An apparatus for cleaning flip chip assemblies is provided. The apparatus comprises: a chuck assembly; a motor coupled to the chuck assembly by a spindle; at least one carrier for holding flip chips; at least one spray nozzle for directing DIW, a cleaning solution, a gas or a vapor. Embodiments of the invention further provide methods for cleaning flip chip assemblies. The method comprises: loading at least one flip chip to the flip chip carriers; rotating the chuck assembly at a rotation speed; flowing DIW for rinsing the flip chips; flowing a cleaning solution for removing the contaminants; applying ultrasonic/megasonic energy to the flip chips; blowing a gas or a vapor via the spray nozzles for drying the flip chips; bringing the flip chips out of the flip chip carriers.

Abstract: The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor; and a capacitor having a first conductive layer and a second conductive layer and disposed on a second region of the second nitride semiconductor layer. Wherein the first conductive layer of the capacitor and the first source electrode have a first material, and the second conductive layer of the capacitor and the first field plate have a second material.

Abstract: Disclosed is an artificial eyelash, comprising an artificial eyelash body. A cross section of the artificial eyelash body along a length direction is a polygon. The polygon comprises a triangle. The artificial eyelash body comprises an end portion close to an eyelid and a tip portion far away from the eyelid. The artificial eyelash body is converged to one point of the tip portion along a taper from the end portion to the tip portion. The polygonal artificial eyelash can better reflect light, so that the artificial eyelash has better luster under light, thus providing better eye decoration for a user.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.