Abstract: A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.

Abstract: The present invention provides a scan gantry for a medical imaging system. The scan gantry comprises a bottom supporting frame and a tilt supporting frame that are connected to each other, wherein the tilt supporting frame is tiltable relative to the bottom supporting frame. The scan gantry further comprises a locking mechanism connected between the bottom supporting frame and the tilt supporting frame. In the process that the tilt supporting frame is being tilted relative to the bottom supporting frame, the locking mechanism is in an unlocked state; and when the tilt supporting frame is stationary relative to the bottom supporting frame, the locking mechanism is in a locked state to prevent the tilt supporting frame from moving relative to the bottom supporting frame.

Abstract: A method for cleaning a semiconductor substrate without damaging its patterned structure via an ultra/mega sonic device comprises applying liquid into a space between the substrate and the sonic device; setting an ultra/mega sonic device power supply at a frequency f1 and power P1; and at zero output before bubble cavitation occurs; followed by at f1 and P1 again after bubble temperature is lowered; detecting power on time (at P1, f1), power off time or amplitude of each waveform output by the power supply; comparing the detected power on time with a preset time T1, power off time with a preset time ?2, amplitude of each waveform with a preset value, if the detected power on time is longer than ?1, or power off time is shorter than ?2, or amplitude of any waveform is larger than the preset value, shut down the power supply and send out an alarm.

Abstract: A method for effectively cleaning vias (20034), trenches (20036) or recessed areas on a substrate (20010) using an ultra/mega sonic device (1003, 3003, 16062, 17072), comprising: applying liquid (1032) into a space between a substrate (20010) and an ultra/mega sonic device (1003, 3003, 16062, 17072); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside vias (20034), trenches (20036) or recessed areas on the substrate (20010) increasing to a first set value, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside the vias (20034), trenches (20036) or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate (20010) being cleaned.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: A method for disinfecting explants of Kadsura coccinea stems with buds and a method for directly inducing rapid proliferation of sterile buds by using the explants of Kadsura coccinea stems with buds involve processes such as selection, treatment and disinfection of explants, primary culture, subculture proliferation culture. The problem of difficulty in tissue culture and primary culture of Kadsura coccinea stems is solved, and the advantages include low contamination rate of explants, high propagation rate and robust proliferation of axillary buds. This allows obtaining sterile axillary buds of Kadsura coccinea through tissue culture, and provides support for tissue culture, rapid propagation and factory seedling of Kadsura coccinea in the future.

Abstract: The present invention relates to a gantry of a CT scanning device comprising: a first housing having a first bore; a second housing having a second bore, disposed opposite to the first housing, wherein there is a gap between the first bore and the second bore, as a ray scanning bore; a scan window assembly comprising an annular window body having an inner surface and an outer surface, the scan window assembly being engaging-locked with the first housing and the second housing and sealing and covering the ray scanning bore. In this way, the engaging-lock can restrict deformation of the annular window body when an external force is applied on the scan window assembly, and the sealing can prevent liquid in the first and second housing from leaking out and prevent liquid inside the scan window assembly from leaking into the first and second housing.

Abstract: The present invention provides a recombinant viral vector, an immunogenic composition containing the same, and the use thereof. The recombinant viral vector comprises a polynucleotide encoding a fusion peptide of CD4 helper T cell epitopes, the epitope fusion peptide comprising a cytomegalovirus epitope and/or an influenza virus epitope. The epitope fusion peptide and the recombinant viral vector provided by the present invention can improve the level of cellular immune response to a target immunogen, particularly to a weak immunogen, and overcome the immune tolerance of immune system to an antigen, particularly to a tumor antigen or an infection-related antigen. The products of the present invention are suitable for enhancing the efficacy of vaccines.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Abstract: Embodiments of this application disclose a semiconductor device and a manufacturing method thereof The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate and having a first bandgap, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a second bandgap. The second bandgap is larger than the first bandgap. The semiconductor device further includes a gate contact disposed over the second nitride semiconductor layer and a first field plate disposed over the gate contact. The first field plate has a first surface facing the substrate, a second surface facing the substrate, and a protruded portion. The protruded portion has a bottom surface facing the substrate. The bottom surface is located between the first surface and the second surface.

Abstract: A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.

Abstract: The present disclosure discloses a method for measuring a mudflat elevation based on remotely sensed water content, comprising steps of: measuring a spectral value of a soil surface in a mudflat area using a full-band spectrometer, analyzing a relationship between the spectral value and a soil water content of the mudflat area; building a remotely sensed water content retrieval model using a statistical correlation method; selecting a water sensitive waveband in the remote sensing data, and retrieving the soil water content of the mudflat area; analyzing a relationship between the soil water content and the mudflat likewise using the statistical correlation method; building a relational model between the mudflat water content and an elevation, and applying the model to a satellite image to obtain the mudflat elevation.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: Provided herein are compounds of Formula (I): and forms thereof, including compositions thereof and uses therewith for treating spinal muscular atrophy.

Abstract: The present invention discloses a method for effectively cleaning vias, trenches or recessed areas on a substrate using an ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside vias, trenches or recessed areas on the substrate increasing to a first set value, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside the vias, trenches or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: Embodiments of the present disclosure relate to a method for cleaning an in-process wafer. The method comprises causing the in-process wafer to be rotated, causing function water to be applied to a surface of the rotated in-process wafer to generate a flowing function water film on the rotated in-process wafer, causing the surface of the in-process wafer to be cleaned by a sonic device for a first period, causing the sonic device to be lifted and/or rotation speed of the rotated in-process wafer to be accelerated to separate the sonic device from the flowing function water film, causing the function water to be applied to the surface of the rotated in-process wafer for a second period after separating the sonic device from the function water film, and causing the surface of the in-process wafer to be dried.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: An apparatus for cleaning semiconductor substrates includes a chamber (101), a chuck (102), a liquid collector (104), an enclosing wall (105), at least one driving mechanism (106), at least one internal dispenser (111), and at least one external dispenser (118). The chamber (101) has a top wall (1011), a side wall (1012) and a bottom wall (1013). The chuck (102) is disposed in the chamber (101) for holding a semiconductor substrate (103). The liquid collector (104) surrounds the chuck (102). The enclosing wall (105) surrounds the liquid collector (104). The at least one driving mechanism (106) drives the enclosing wall (105) to move up and down, wherein when the at least one driving mechanism (106) drives the enclosing wall (105) to move up, a seal room (110) is formed by the liquid collector (104), the enclosing wall (105), the top wall (1011) of the chamber (101), and the bottom wall (1013) of the chamber (101). The at least one internal dispenser (111) is disposed inside the seal room (110).

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.