Abstract: In the technical field of lithium ion batteries, disclosed is a wet synthesis method of a high-nickel NCMA quaternary precursor. The method includes synthesizing solid tiny crystal nuclei of the NCMA quaternary precursor in a first reactor, and prompting the crystal nuclei of the quaternary precursor to grow to a certain particle size in a second reactor, wherein in the first reactor, an upper feeding mode is used to continuously produce the solid tiny crystal nuclei of the NCMA quaternary precursor. In the second reactor, an upper-and-lower dual feeding mode is used to prompt the continuous growth of the solid tiny crystal nuclei of the NCMA quaternary precursor. During a washing process, the NCMA quaternary precursor is washed with a mixed alkali solution of sodium carbonate and sodium hydroxide at certain concentration, so that Na can be reduced below 50 ppm and sulfur can be reduced below 800 ppm.

Abstract: The present description relates to compounds useful for improving pre-mRNA splicing in a cell. In particular, another aspect of the present description relates to substituted thieno [3,2-d]pyrimidine compounds, forms, and pharmaceutical compositions thereof and methods of use for treating or ameliorating familial dysautonomia.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.

Abstract: A polyurethane composition includes, based on the total weight of the composition, A) 20-35 wt % of polyurethane prepolymer PU-1 which is a reaction product of ethylene oxide (EO)-terminated polyether triol with an aromatic polyisocyanate, and B) 0.2-3 wt % of polyurethane prepolymer PU-2 which is a reaction product of polyester polyol with an aromatic polyisocyanate. The composition has a low TVOC content, has a good adhesion without the need of primer, can cure rapidly with a high initial bonding strength, while keeping good mechanical properties.

Abstract: A method for disinfecting explants of Kadsura coccinea stems with buds and a method for directly inducing rapid proliferation of sterile buds by using the explants of Kadsura coccinea stems with buds involve processes such as selection, treatment and disinfection of explants, primary culture, subculture proliferation culture. The problem of difficulty in tissue culture and primary culture of Kadsura coccinea stems is solved, and the advantages include low contamination rate of explants, high propagation rate and robust proliferation of axillary buds. This allows obtaining sterile axillary buds of Kadsura coccinea through tissue culture, and provides support for tissue culture, rapid propagation and factory seedling of Kadsura coccinea in the future.

Abstract: The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a nitride semiconductor layer disposed on the substrate, a first gate stack in contact with the nitride semiconductor layer, and a resistor laterally spaced apart from the first gate stack and electrically connected to first gate stack. The resistor comprises a first conductive terminal in contact with the nitride semiconductor layer, a second conductive terminal in contact with the nitride semiconductor layer; a first doped region of the nitride semiconductor layer between the first conductive terminal and the second conductive terminal; and a first conductive region of the nitride semiconductor layer in contact with the first conductive terminal and the second conductive terminal.

Abstract: The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor; and a capacitor having a first conductive layer and a second conductive layer and disposed on a second region of the second nitride semiconductor layer. Wherein the first conductive layer of the capacitor and the first source electrode have a first material, and the second conductive layer of the capacitor and the first field plate have a second material.

Abstract: The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a passivation layer covering the first gate conductor, and a second gate conductor disposed on the passivation layer and on a second region of the second nitride semiconductor layer, wherein the first region is laterally spaced apart from the second region.

Abstract: An apparatus for cleaning semiconductor substrates including a chamber, a chuck, a liquid collector, an enclosing wall, at least one driving mechanism, at least one internal dispenser, and at least one external dispenser. The chamber has a top wall, a side wall and a bottom wall. The chuck is disposed in the chamber. The liquid collector surrounds the chuck. The enclosing wall surrounds the liquid collector. The driving mechanism drives the enclosing wall to move up and down, wherein when the enclosing wall is driven to move up, a seal room is formed by the liquid collector, the enclosing wall, the top wall and bottom wall of the chamber. The internal dispenser is disposed inside the seal room. The external dispenser is disposed outside the seal room and capable of getting in and out of the seal room after the enclosing wall is driven to move down.

Abstract: A method for cleaning a substrate with pattern structures comprises the following steps: using gas-liquid atomization to clean a substrate surface (601); using TEBO megasonic to clean the substrate surface (602); and drying the substrate (603). The TEBO megasonic cleaning is used to remove small size particles on the substrate and the gas-liquid atomization cleaning is used to remove large size particles on the substrate. The method enables achieving an effect of cleaning the substrate without or with less device damage. A substrate cleaning apparatus is also provided.

Abstract: A method and apparatus for cleaning semiconductor wafer, combining batch cleaning and single wafer cleaning together. The method includes: taking at least two wafers from a cassette in a load port and putting said wafers into a first tank filled with chemical solution; after processing said wafers in the first tank, taking said wafers out of the first tank and keeping said wafers wet; putting said wafers into a second tank filled with liquid; after processing said wafers in the second tank, taking said wafers out of the second tank and keeping said wafers wet; putting one of said wafers on a chuck inside a single wafer cleaning module; rotating the chuck while applying chemical solution on said wafer; applying deionized water on said wafer; drying said wafer; taking said wafer out of the single wafer cleaning module and putting said wafer back to the cassette in the load port.

Abstract: The present invention relates to a method for inducing amplification of human type I NKT cells in vitro using a “specific stimulant+staged cytokine” mode, which consists of two culture stages, wherein the first culture stage focuses on specific amplification of the number of the type I NKT cells, in which a specific stimulant ?-GalCer is used to advantageously amplify the type I NKT cells and ?-GalCer-loaded CD1d-expressing cells are used to stimulate continuous proliferation of the type I NKT cells while adding cytokines IL-2 and IL-7 to assist growth of the type I NKT cells; and the second culture stage is to synchronously perform amplification of the number of the type I NKT cells and guide directed function differentiation, in which CD1d-expressing cells incubated with ?-GalCer continue to stimulate proliferation of the type I NKT cells while adding IL-2, IL-7 and IL-15 to assist amplification of the type I NKT cells and guide differentiation, and IL-12 is added to the culture system 1-2 days before the e

Abstract: The present description relates to compounds, forms, and pharmaceutical compositions thereof and methods of using such compounds, forms, or compositions thereof for treating or ameliorating Huntington's disease. In particular, the present description relates to substituted monocyclic heteroaryl compounds of Formula (I), Formula (II), or Formula (III), forms and pharmaceutical compositions thereof and methods of using such compounds, forms, or compositions thereof for treating or ameliorating Huntington's disease.

Abstract: A composition for inducing and/or amplifying TSCM in vitro, a culture medium including the composition, and a method for inducing and/or amplifying TSCM in vitro are provided, wherein the composition comprises inducing agents including IL-7 and IL-21. The chimeric antigen receptor T-memory stem cells induced differentiated and amplified by adding the composition can be used directly for reinfusion therapy of patients.

Abstract: Disclosed are a fusion peptide of CD4 helper T cell epitopes, a nucleic acid encoding the same and an immunogenic composition comprising the same. The epitope fusion peptide comprises a cytomegalovirus epitope and an influenza virus epitope. The epitope fusion peptide can substantially improve the level of cellular immune response to a target immunogen, particularly a weak immunogen, and is an effective means for overcoming the immune tolerance of immune system to an antigen, particularly to a tumor antigen or an infection-related antigen, and is suitable for efficiently enhancing the efficacy of vaccine.

Abstract: The present description relates' to compounds of formula (I) useful for improving pre-mRNA splicing in a cell. In particular, another aspect of the present description relates to substituted thieno[3,2-b]pyridine compounds, forms, and pharmaceutical compositions thereof and methods of use for treating or ameliorating familial dysautonomia.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time ?1, or comparing the detected power off time with a preset time ?2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time

Abstract: The present disclosure relates to a novel influenza immunogen with broad-spectrum anti-influenza virus effect and the immunization method thereof. The present disclosure provides a novel anti-influenza immunogen whose sequence comprises the amino acid sequence shown in SEQ ID No: 1 and SEQ ID No: 2, or an immunogenic fragment thereof, or a combination thereof. In addition, the present disclosure also provides use of the recombinant vector vaccine using said immunogen in the anti-influenza vaccine, and the immunization method of the recombinant vector vaccine using said immunogen. Through the sequential administration of multiple vector vaccines expressing the novel influenza immunogen, and the combined use of systemic administration and local administration, a high-level T cell immune response is induced in the local respiratory tract, which can produce broad-spectrum protection against multiple influenza virus infections.

Abstract: A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.