Abstract: By providing a novel bipolar device design implementation, a standard CMOS process (105-109) can be used unchanged to fabricate useful bipolar transistors (80) and other bipolar devices having adjustable properties by partially blocking the P or N well doping (25) used for the transistor base (581). This provides a hump-shaped base (583, 584) region with an adjustable base width (79), thereby achieving, for example, higher gain than can be obtained with the unmodified CMOS process (101-104) alone. By further partially blocking the source/drain doping step (107) used to form the emitter (74) of the bipolar transistor (80), the emitter shape and effective base width (79) can be further varied to provide additional control over the bipolar device (80) properties. The embodiments thus include prescribed modifications to the masks (57, 62, 72, 46) associated with the bipolar device (80) that are configured to obtain desired device properties.

Abstract: Improved Schottky diodes (20) with reduced leakage current and improved breakdown voltage are provided by building a JFET (56) into the diode, serially located in the anode-cathode current path (32). The gates of the JFET (56) formed by doped regions (38, 40) placed above and below the diode's current path (32) are coupled to the anode (312) of the diode (20), and the current path (32) passes through the channel region (46) of the JFET (56). Operation is automatic so that as the reverse voltage increases, the JFET (56) channel region (46) pinches off, thereby limiting the leakage current and clamping the voltage across the Schottky junction (50) at a level below the Schottky junction (50) breakdown. Increased reverse voltage can be safely applied until the device eventually breaks down elsewhere. The impact on device area and area efficiency is minimal and the device can be built using a standard fabrication process so that it can be easily integrated into complex ICs.

Abstract: A semiconductor device includes a substrate (20), a source region (58) formed over the substrate, a drain region (62) formed over the substrate, a first gate electrode (36) over the substrate adjacent to the source region and between the source and drain regions, and a second gate electrode (38) over the substrate adjacent to the drain region and between the source and drain regions.

Abstract: An improved device (20) is provided, comprising, merged vertical (251) and lateral transistors (252), comprising thin collector regions (34) of a first conductivity type sandwiched between upper (362) and lower (30) base regions of opposite conductivity type that are Ohmically coupled via intermediate regions (32, 361) of the same conductivity type and to the base contact (38). The emitter (40) is provided in the upper base region (362) and the collector contact (42) is provided in outlying sinker regions (28) extending to the thin collector regions (34) and an underlying buried layer (28). As the collector voltage increases part of the thin collector regions (34) become depleted of carriers from the top by the upper (362) and from the bottom by the lower (30) base regions. This clamps the thin collector regions' (34) voltage well below the breakdown voltage of the PN junction formed between the buried layer (28) and the lower base region (30).

Abstract: Improved Schottky diodes (20, 20?) with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path (50, 50?) of a first conductivity type serially located between a first terminal (80, 80?, 32, 32?) comprising a Schottky contact (33, 33?) and a second (82, 82?, 212, 212?) terminal. The current path (50, 50?) lies (i) between multiple substantially parallel finger regions (36, 36?) of a second, opposite, conductivity type substantially laterally outboard of the Schottky contact (33, 33?), and (ii) partly above a buried region (44, 44?) of the second conductivity type that underlies a portion (46, 46?) of the current path (50, 50?), which regions (36, 36?; 44, 44?) are electrically coupled to the first terminal (80, 80?, 32, 32?) and the Schottky contact (33, 33?) and which portion (46, 46?) is electrically coupled to the second terminal (82, 82?, 212, 212?).

Abstract: A wire electrical discharge machine (WEDM) is disclosed, which comprises: a movable crane; a measure unit, mounted on the crane for measuring the deformation of the same; and a control unit, electrically connected to the measure unit and used for controlling the crane to move; wherein a lookup table describing the relation between the crane's deformation and position error is stored in the control unit, basing on which the control unit is able to perform a feedback displacement control on the crane with respect to its deformation.

Abstract: Improved Schottky diodes (20) with reduced leakage current and improved breakdown voltage are provided by building a JFET (56) into the diode, serially located in the anode-cathode current path (32). The gates of the JFET (56) formed by doped regions (38, 40) placed above and below the diode's current path (32) are coupled to the anode (312) of the diode (20), and the current path (32) passes through the channel region (46) of the JFET (56). Operation is automatic so that as the reverse voltage increases, the JFET (56) channel region (46) pinches off, thereby limiting the leakage current and clamping the voltage across the Schottky junction (50) at a level below the Schottky junction (50) breakdown. Increased reverse voltage can be safely applied until the device eventually breaks down elsewhere. The impact on device area and area efficiency is minimal and the device can be built using a standard fabrication process so that it can be easily integrated into complex ICs.

Abstract: An apparatus for processing an image with a discrete wavelet transform is provided. For one-dimensional circuit, the method changes conventional image data processing flow and uses common product of sequential calculations with respect to the time axis. The calculations for input data are not repeated so that components of the hardware architecture are minimized. For two-dimensional circuit, the method uses an external data scanning method to eliminate an external memory, transposing buffer, from a transforming circuit.

Abstract: A pixel structure including a substrate, a scan line, a data line, a common line, an active device, a pixel electrode, a passivation layer and a transition auxiliary electrode is provided. The scan line and the data line on the substrate intersect with each other to define a pixel region. The common line on the substrate is parallel to the scan line. The active device disposed within the pixel region is electrically connected to the scan line and the data line. The pixel electrode disposed within the pixel region is electrically connected to the active device. The passivation layer is between the data line and the pixel electrode. The transition auxiliary electrode is adjacent to the periphery of the pixel electrode and electrically connected to the common line through a contact hole of the passivation layer. The transition auxiliary electrode and the pixel electrode are made of the same film.

Abstract: The invention provides a working trough and a method for maintaining a uniform temperature of a working fluid. The working trough is applied to an electrical discharge machine that performs wire cutting using the working fluid. The method for maintaining a uniform temperature of the working fluid is applied to the working trough and characterized by forming opening structures in a receiving slot of the working trough such that a spiral swirl having a predetermined height is allowed to be formed in the working fluid, thereby maintaining a uniform temperature of the working fluid in the receiving slot when a wire cutting process is performed in the working fluid by the electrical discharge machine. The disturbance of the spiral swirl also facilitates the discharge of scraps. The present invention further has an advantage of low cost.

Abstract: A pixel structure including a substrate, a scan line, a data line, a common line, an active device, a pixel electrode, a passivation layer and a transition auxiliary electrode is provided. The scan line and the data line on the substrate intersect with each other to define a pixel region. The common line on the substrate is parallel to the scan line. The active device disposed within the pixel region is electrically connected to the scan line and the data line. The pixel electrode disposed within the pixel region is electrically connected to the active device. The passivation layer is between the data line and the pixel electrode. The transition auxiliary electrode is adjacent to the periphery of the pixel electrode and electrically connected to the common line through a contact hole of the passivation layer. The transition auxiliary electrode and the pixel electrode are made of the same film.

Abstract: A feed control method for wire cutting electrochemical discharge machining is disclosed. The method determines whether a contact event has occurred using a wire electrode, based on variations in wire tension when being cut. A wire is cut with an ideal feed speed when the wire electrode is not in contact with a workpiece.

Abstract: By providing a novel bipolar device design implementation, a standard CMOS process (105-109) can be used unchanged to fabricate useful bipolar transistors (80) and other bipolar devices having adjustable properties by partially blocking the P or N well doping (25) used for the transistor base (581). This provides a hump-shaped base (583, 584) region with an adjustable base width (79), thereby achieving, for example, higher gain than can be obtained with the unmodified CMOS process (101-104) alone. By further partially blocking the source/drain doping step (107) used to form the emitter (74) of the bipolar transistor (80), the emitter shape and effective base width (79) can be further varied to provide additional control over the bipolar device (80) properties. The embodiments thus include prescribed modifications to the masks (57, 62, 72, 46) associated with the bipolar device (80) that are configured to obtain desired device properties.

Abstract: A single-poly non-volatile memory includes a PMOS select transistor (210) formed with a select gate (212), and P+ source and drain regions (211, 213) formed in a shared n-well region (240), a serially connected PMOS floating gate transistor (220) formed with part of a p-type floating gate layer (222) and P+ source and drain regions (221, 223) formed in the shared n-well region (240), and a coupling capacitor (230) formed over a p-well region (250) and connected to the PMOS floating gate transistor (220), where the coupling capacitor (230) includes a first capacitor plate formed with a second part of the p-type floating gate layer (222) and an underlying portion of the p-well region (250).

Abstract: A wire-receiving mechanism for holding electrical wire used to cut or burn through a metal work piece in wire electrical discharge machines (WEDMs) is disclosed. A passive wheel and an active wheel are disposed side by side with one another in a case body, the active wheel being capable of causing the passive wheel to rotate, wherein one side of the passive wheel has a driving unit defined thereon. The driving unit is disposed to penetrate through one side of the case body, and includes a driving member disposed to one side of the case body, an action member connected to the driving member and a sliding member connected to the action member for pushing the passive wheel, wherein a pretension spring is disposed at one side of the sliding member for controlling the gap between the passive wheel and the active wheel such that the processing wires can be stably held and conveyed.

Abstract: A wire electrical discharge machine (WEDM) is disclosed, which comprises: a movable crane; a measure unit, mounted on the crane for measuring the deformation of the same; and a control unit, electrically connected to the measure unit and used for controlling the crane to move; wherein a lookup table describing the relation between the crane's deformation and position error is stored in the control unit, basing on which the control unit is able to perform a feedback displacement control on the crane with respect to its deformation.

Abstract: A therapeutic compound consisting of human telomerase, its catalytic subunit hTert, or a known variant of either, and a biodegradable nanoparticle carrier, which can be administered to cells in a cell culture or in a living animal, is provided herein. The therapeutic compound is envisioned as a method for treating a wide variety of age-related diseases such as idiopathic pulmonary fibrosis, aplastic anemia, dyskeratosis congenita, arteriosclerosis, macular degeneration, osteoporosis, Alzheimer's, diabetes type 2, and any disease that correlates with telomere shortening and may be corrected or ameliorated by lengthening telomeres. The therapeutic compound is also envisioned as method for potentially treating more generic problems of human aging.

Abstract: A semiconductor device includes a substrate (20), a source region (58) formed over the substrate, a drain region (62) formed over the substrate, a first gate electrode (36) over the substrate adjacent to the source region and between the source and drain regions, and a second gate electrode (38) over the substrate adjacent to the drain region and between the source and drain regions.

Abstract: A pixel structure including a substrate, a scan line, a data line, a common line, an active device, a pixel electrode, a passivation layer and a transition auxiliary electrode is provided. The scan line and the data line on the substrate intersect with each other to define a pixel region. The common line on the substrate is parallel to the scan line. The active device disposed within the pixel region is electrically connected to the scan line and the data line. The pixel electrode disposed within the pixel region is electrically connected to the active device. The passivation layer is between the data line and the pixel electrode. The transition auxiliary electrode is adjacent to the periphery of the pixel electrode and electrically connected to the common line through a contact hole of the passivation layer. The transition auxiliary electrode and the pixel electrode are made of the same film.

Abstract: An apparatus for processing an image with a discrete wavelet transform is provided. For one-dimensional circuit, the method changes conventional image data processing flow and uses common product of sequential calculations with respect to the time axis. The calculations for input data are not repeated so that components of the hardware architecture are minimized. For two-dimensional circuit, the method uses an external data scanning method to eliminate an external memory, transposing buffer, from a transforming circuit.