Abstract: The present disclosure provides a bonding method for a semiconductor substrate, which may improve flatness of a bonded substrate. The present disclosure further provides a bonded semiconductor substrate. The semiconductor substrate is thermally treated prior to bonding, and oxygen precipitates in the semiconductor substrate are partially or totally converted to interstitial oxygen atoms in the thermal treatment.

Abstract: The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.

Abstract: A system and method of optimizing tree pruning for a decision tree may include splitting, a first dataset into a training dataset and a testing dataset, growing the training dataset into a first decision tree, sampling the training dataset by creating a plurality of sampling datasets from the training dataset, pruning the first decision tree using the plurality of sampling datasets, creating a plurality of models, at least one for each of the plurality of sampling datasets, and verifying the accuracy of each of the plurality of models, using the testing dataset.

Abstract: Provided is a steam turbine overspeed protection system, includes a drive gear arranged to match a rotation speed of a rotor of a steam turbine; a rotating shaft parallel to an axis of the drive gear and capable of rotating at a critical rotation speed; a protective gear arranged on the rotating shaft and forming a lead screw nut mechanism with the rotating shaft, and arranged to be capable of engaging with the drive gear when the rotation speed of the drive gear exceeds the critical rotation speed; and an operating rod connected to the protective gear; wherein, when the drive gear engages with the protective gear, the protective gear can move in the axial direction of the rotating shaft and thereby drive the operating rod to move and produce an action that activates a protection device for preventing steam turbine overspeed.

Abstract: A method for preparing a substrate with an insulating buried layer includes: providing a substrate, the substrate having a supporting layer and an insulating layer arranged on a surface of the supporting layer; performing first ion implantation, implanting modified ions into the substrate, wherein a distance from an interface between the insulating layer and the supporting layer to a Gaussian distribution peak of modified ion concentration is less than 50 nm, such that the modified ions form a nano cluster in the insulating layer; and performing a second ion implantation, continuing to implant the modified ions into the insulating layer, wherein the ions are implanted in the same way as the first ion implantation, and a distance from a Gaussian distribution peak of modified ion concentration in this step to the Gaussian distribution peak of modified ion concentration in the first ion implantation is less than 80 nm.

Abstract: The present disclosure provides a method for preparing a substrate with a carrier trapping center. The method includes: implanting bubbling ions into the semiconductor substrate to form a splitting layer, and implanting modified ions into the insulating layer to form a nano cluster; providing a supporting substrate; bonding the supporting substrate to the semiconductor substrate by using the insulating layer as an intermediate layer; performing a first heat treatment for the bonded substrate such that a splitting layer is formed at the position where the bubbling ions are implanted, and causing the semiconductor substrate to split at the position of the splitting layer; performing rapid thermal annealing for the substrate; and performing a second heat treatment for the rapidly thermally annealed semiconductor substrate to consolidate the bonding interface and form the nano cluster at the position where the modified ions are implanted.

Abstract: A wireless communication device mounted on a mobile object, the mobile object including: a mobile communication unit that is able to connect to a mobile communication network; and a wireless network connection unit that provides a wireless network connection service based on the mobile communication network connected by the mobile communication unit, the wireless communication device includes: a satellite positioning unit configured to acquire position information on the wireless communication device based on a satellite positioning system; and a control unit configured to control a connection state of the wireless network connection service based on the position information acquired by the satellite positioning unit.

Abstract: A method and apparatus for controlling a volume of a device is provided herein. During operation, a first device will receive a volume-adjustment message from a second device, along with an identity of an active application being run on the second device. The volume-adjustment message indicates whether or not the second device increased or decreased their volume. The first device will increase or decrease their volume in a similar manner as the second device if the first device is currently running a same active application as the second device; otherwise the first device will adjust its volume in an opposite direction as indicated in the volume-adjustment message.

Abstract: The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.

Abstract: Provided are a CMOS device having a charged punch-through stopper (PTS) layer to reduce punch-through and a method of manufacturing the same. In an embodiment, the CMOS semiconductor device includes an n-type device and a p-type device. The n-type device and the p-type device each may include: a fin structure formed on a substrate; an isolation layer formed on the substrate, wherein a portion of the fin structure above the isolation layer acts as a fin of the n-type device or the p-type device; a charged PTS layer formed on side walls of a portion of the fin structure beneath the fin; and a gate stack formed on the isolation layer and intersecting the fin. For the n-type device, the PTS layer has net negative charges, and for the p-type device, the PTS layer has net positive charges.

Abstract: A method of determining at least one selection parameter for selecting an intraocular lens to be inserted into an eye; the method comprises reading, by a data processing system, data indicative of an axial position of at least a portion of an anterior surface of an at least partially empty capsular bag of the eye, relative to an optical axis of the eye. The method further comprises determining an axial position parameter, which is representative of the axial position of the portion of the anterior surface, depending on the data. The method further comprises determining the at least one selection parameter for selecting the intraocular lens depending on the determined position parameter.

Abstract: A method of determining at least one selection parameter for selecting an intraocular lens to be inserted into an eye; the method comprises reading, by a data processing system, data indicative of an axial position of at least a portion of an anterior surface of an at least partially empty capsular bag of the eye, relative to an optical axis of the eye. The method further comprises determining an axial position parameter, which is representative of the axial position of the portion of the anterior surface, depending on the data. The method further comprises determining the at least one selection parameter for selecting the intraocular lens depending on the determined position parameter.

Abstract: Disclosed are a method and a system for pushing recommended friends to a user on a social networking site, wherein, the method includes: automatically analyzing usage information of each user on a current social networking site to obtain feature information of each user; matching feature information of a user on the current social network with feature information of other users on the current social networking site to obtain matching goodness-of-fit values of feature information between the user and the other users; determining users corresponding to matching goodness-of-fit values which are greater than a preset goodness-of-fit value as matching users of the user; sending friend recommendation information to the user, wherein the friend recommendation information includes information of each matching user. The present document can achieve that a social networking site actively recommends friends to a user.

Abstract: A method for preparing a substrate with an insulating buried layer includes: providing a substrate, the substrate having a supporting layer and an insulating layer arranged on a surface of the supporting layer; performing first ion implantation, implanting modified ions into the substrate, wherein a distance from an interface between the insulating layer and the supporting layer to a Gaussian distribution peak of modified ion concentration is less than 50 nm, such that the modified ions form a nano cluster in the insulating layer; and performing a second ion implantation, continuing to implant the modified ions into the insulating layer, wherein the ions are implanted in the same way as the first ion implantation, and a distance from a Gaussian distribution peak of modified ion concentration in this step to the Gaussian distribution peak of modified ion concentration in the first ion implantation is less than 80 nm.

Abstract: The present disclosure provides a method for preparing a substrate with a carrier trapping center. The method includes: implanting bubbling ions into the semiconductor substrate to form a splitting layer, and implanting modified ions into the insulating layer to form a nano cluster; providing a supporting substrate; bonding the supporting substrate to the semiconductor substrate by using the insulating layer as an intermediate layer; performing a first heat treatment for the bonded substrate such that a splitting layer is formed at the position where the bubbling ions are implanted, and causing the semiconductor substrate to split at the position of the splitting layer; performing rapid thermal annealing for the substrate; and performing a second heat treatment for the rapidly thermally annealed semiconductor substrate to consolidate the bonding interface and form the nano cluster at the position where the modified ions are implanted.

Abstract: The present disclosure provides a method for cleaning a bonding interface before bonding. The method includes: providing a first surface and a second surface for bonding, the first surface being a non-crystal surface and the second surface being a crystal surface; and cleaning the first surface and the second surface with ammonia respectively before bonding, wherein at least one of parameters of an ammonia concentration and a cleaning temperature for cleaning the first surface is higher than a counterpart of parameters for cleaning the second surface.

Abstract: The present disclosure provides a method for preparing a substrate with a carrier trapping center. The method includes: injecting bubbling ions into the semiconductor substrate to form a splitting layer, and injecting modified ions into the insulating layer to form a nano cluster; providing a supporting substrate; bonding the supporting substrate to the semiconductor substrate by using the insulating layer as an intermediate layer; performing a first heat treatment for the bonded substrate such that a splitting layer is formed at the position where the bubbling ions are injected, and causing the semiconductor substrate to split at the position of the splitting layer; thinning a splitting surface of the split semiconductor substrate; and performing a second heat treatment for the thinned semiconductor substrate to consolidate the bonding interface and form the nano cluster at the position where the modified ions are injected.

Abstract: A wireless communication device mounted on a mobile object, the mobile object including: a mobile communication unit that is able to connect to a mobile communication network; and a wireless network connection unit that provides a wireless network connection service based on the mobile communication network connected by the mobile communication unit, the wireless communication device includes: a satellite positioning unit configured to acquire position information on the wireless communication device based on a satellite positioning system; and a control unit configured to control a connection state of the wireless network connection service based on the position information acquired by the satellite positioning unit.

Abstract: A method and apparatus for controlling a volume of a device is provided herein. During operation, a first device will receive a volume-adjustment message from a second device, along with an identity of an active application being run on the second device. The volume-adjustment message indicates whether or not the second device increased or decreased their volume. The first device will increase or decrease their volume in a similar manner as the second device if the first device is currently running a same active application as the second device; otherwise the first device will adjust its volume in an opposite direction as indicated in the volume-adjustment message.

Abstract: A wireless communication device mounted on a mobile object, the mobile object including: a mobile communication unit that is able to connect to a mobile communication network; and a wireless network connection unit that provides a wireless network connection service based on the mobile communication network connected by the mobile communication unit, the wireless communication device includes: a satellite positioning unit configured to acquire position information on the wireless communication device based on a satellite positioning system; and a control unit configured to control a connection state of the wireless network connection service based on the position information acquired by the satellite positioning unit.