Abstract: An array substrate, a manufacturing method thereof, and a display panel. The array substrate includes a light-emitting area and a non-light-emitting area. The array substrate comprises: a substrate; a gate insulating layer comprising a first gate insulating layer and a second gate insulating layer disposed on the substrate in sequence; and a storage capacitor disposed in the light-emitting area and comprising a first transparent electrode and a second transparent electrode. Wherein the first transparent electrode is disposed between the first gate insulating layer and the second gate insulating layer, and the second transparent electrode is disposed on the second gate insulating layer.

Abstract: The present disclosure provides a display panel and a manufacturing method thereof. The display panel includes at least a part of metal layer disposed in a bonding area. The metal layer includes a first sub-metal layer, a second sub-metal layer, and a third sub-metal layer disposed in sequence and in a stack. A material used as the first sub-metal layer and the third sub-metal layer is one of molybdenum, titanium, or molybdenum-titanium alloy, and a material used as the second sub-metal layer is copper. The display panel provided by the present disclosure can solve problems that metal silver in the bonding area cannot be exposed outside and metal copper exposed outside is easily oxidized.

Abstract: An array substrate and a manufacturing method thereof, the array substrate includes a glass substrate, a barrier layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode layer, an interlayer insulation layer, a source/drain electrode layer, a passivation layer, and a pixel electrode which are disposed layer by layer. The manufacturing method includes providing the glass substrate, manufacturing the barrier layer, manufacturing the buffer layer, manufacturing the active layer, manufacturing the gate insulating layer, manufacturing the gate electrode layer, a patterning step, a step of doping plasma, manufacturing the interlayer insulation layer, manufacturing the source/drain electrode layer, manufacturing the passivation layer, and manufacturing the pixel electrode.

Abstract: An ultra-high molecular weight polyethylene fiber with ultra-high cut resistance includes an ultra-high molecular weight polyethylene matrix and carbon fiber powder particles dispersed therein. The content of the carbon fiber powder particles is 0.25-10 wt %. A method for preparing the ultra-high molecular weight polyethylene fiber with the ultrahigh cut resistance and a cut-resistant glove woven therefrom are further provided. The test proves that the glove woven from the ultra-high molecular weight polyethylene fiber with the ultra-high cut resistance is soft and comfortable, and does not have prickling sensation. According to the test of the Standard EN388-2003, the level of the cut-resistant grade ranges from 4 to 5.

Abstract: An array substrate, a display panel, and a method of fabricating an array substrate are provided. The array substrate includes a display region and a non-display region. The array substrate further includes a substrate, a first transparent layer disposed on the substrate corresponding to the display region, an interlayer insulating layer disposed on the substrate, and a second transparent layer disposed on the interlayer insulating layer.

Abstract: The present disclosure provides an OLED display panel which includes a substrate, a drive circuit layer, a light-emitting functional layer, and a pixel definition layer. The light-emitting functional layer includes a light-emitting area and a non-light-emitting area. The drive circuit layer includes a buffer layer, a first electrode plate, and a second electrode plate, and the first electrode plate and the second electrode plate form a storage capacitor. It solves the technical problem of current OLED display panels having dark stripes by not depositing the first electrode plate when silicon nitride is deposited to form a first buffer layer which prevents ionic gases produced when silicon nitride is deposited from having a reduction reaction with the first electrode plate.

Abstract: A display panel is provided. The display panel includes thin film transistors arranged in an array. A source and a drain of each of the thin film transistors each include an electrode layer, and the electrode layer of the source or the drain extends to a pixel opening area and can be used as a pixel electrode.

Abstract: The present application provides an array substrate and a manufacturing method thereof. The array substrate includes a thin film transistor and a storage capacitor prepared on a substrate; the thin film transistor includes a gate, an active layer, and a source/drain; the storage capacitor includes a first electrode and a second electrode isolated therefrom by a dielectric layer; the gate is disposed above the first electrode and located at one end of the first electrode; and the second electrode corresponds to a portion of the first electrode non-corresponding to the gate.

Abstract: The present disclosure provides an organic light-emitting display panel and a manufacturing method thereof. The organic light-emitting display panel includes: a substrate, a first electrode, a light-shielding layer, a buffer layer, and a second electrode. The technical effect of the present disclosure is that: the first electrode adopts a composition, such as transparent indium-doped zinc oxide (IZO) and indium gallium zinc oxide (IGZO), and the transparent first electrode can be disposed on a bottom of a light-emitting area to reduce sizes of pixel areas and improve resolution of organic light-emitting display panels.

Abstract: A display panel and a manufacturing method thereof, and an electronic equipment are provided. The display panel includes a first thin film transistor and a second thin film transistor. A sectional structure of the second thin film transistor includes a second gate electrode, a second source electrode, a second drain electrode, and a second semiconductor layer. The second semiconductor layer is located on the second source electrode and the second drain electrode. Two ends of the second semiconductor layer are electrically connected to the second source electrode and the second drain electrode, respectively.

Abstract: A thin film transistor substrate and a method of fabricating same are provided. The thin film transistor substrate includes a substrate, a light shielding layer disposed on the substrate, a buffer layer disposed on the light shielding layer, an active layer disposed on the buffer layer, and a gate insulating layer disposed on the active layer. The gate insulating layer includes a stacked structure including a first insulating layer and a second insulating layer.

Abstract: An array substrate includes a substrate, a metal light blocking layer positioned on the substrate, a conductive protection layer covering the metal light blocking layer, a buffer layer positioned on the substrate and covering the conductive protection layer, a transistor positioned on the buffer layer and connected to the conductive protection layer, and a pixel electrode connected to the transistor. By utilizing a transparent conductive layer to cover the surface of the copper light blocking layer, the transparent conductive layer becomes a protection layer on the copper layer to protect it from being oxidized and diffused. It also reduces the damage on the copper layer during the etching process and reduces the stripping risk of the copper layer.

Abstract: The present disclosure discloses a common-gate transistor, a pixel circuit, a pixel structure and a display panel, wherein the common-gate transistor includes: a first electrode region, a second electrode region and a third electrode region which are independently disposed, and a common gate region that is in contact with the first electrode region, the second electrode region, and the third electrode region; the common gate region, the first electrode region, and the second electrode region constitute a first transistor; and the common gate region, the first electrode region, and the third electrode region constitute a second transistor.

Abstract: Provided are a manufacturing method of an organic light emitting diode back plate and the organic light emitting diode back plate. In the manufacturing method of an OLED back plate, pixel openings and light blocking grooves correspondingly above active layers are formed in a pixel definition layer. Then, OLED light-emitting functional layers are formed in the pixel openings and the black light shielding blocks completely covering the active layers are formed in the light shielding grooves by ink jet printing, thereby effectively preventing the TFT elements from being affected by the illumination and ensuring the characteristics of the TFT elements. The structure is simple and the production cost is low.

Abstract: Fuzzy-logic based traction control for electric vehicles is provided. The system detects a wheel slip ratio for each wheel. The system receives an input torque command. The system determines a slip error for each wheel based on the wheel slip ratio for each wheel and a target wheel slip ratio. The system, using the fuzzy-logic based control selection technique, selects a traction control technique from one of a least-quadratic-regulator, a sliding mode controller, a loop-shaping based controller, or a model predictive controller. The system generates a compensation torque value for each wheel. The system generates the compensation torque value based on the traction control technique selected via the fuzzy-logic based control selection technique and the slip error for each wheel. The system transmits commands to actuate drive units of the vehicles based on the compensation torque value.

Abstract: The disclosure discloses a common-gate transistor, a pixel circuit, a driving method and a display, including: a first doped region, a second doped region, a third doped region, a fourth doped region and a fifth doped region; the second doped region, the third doped region, the fourth doped region, and the fifth doped region are indirectly communicated through the first doped region, and the second doped region, the third doped region, and the fourth doped region, the fifth doped region and the first doped region are hetero-doped respectively. The two transistors in the common-gate transistor share one gate doped region, i.e., the first doped region, which can not only save one gate doped region, but also can make the gates of the two transistors have the same electrical parameters, and then the cascode effect of the two transistors is more ideal.

Abstract: The present disclosure relates to an OLED display panel. The OLED display panel includes a TFT array substrate, and a flat layer on the TFT array substrate. The flat layer includes a first flat layer and a second flat layer on the first flat layer. A viscosity of the first flat layer is less than a viscosity of the second flat layer. In addition, the present disclosure also relates to a manufacturing method of the OLED display panel to enhance the performance of the OLED display panel.

Abstract: Fuzzy logic based and machine learning enhanced vehicle dynamics determination is provided. A system can identify a previous longitudinal velocity and receive data from an inertia measurement unit. The system can determine a roll angle and a pitch angle. The system can determine a lateral acceleration and a longitudinal acceleration. The system can receive wheel speed sensor data, tire pressure sensor data, and steering angle sensor data, and use the data to determine a longitudinal velocity. The system can select one of a reduced-order non-linear Luenberger observer technique or a reduced-order Kalman filter technique. The system can determine a lateral velocity and a sideslip angle. The system can provide the lateral velocity and the sideslip angle to a vehicle controller.

Abstract: Implementation modes of the disclosure disclose an obstacle detection method, an intelligent driving control method, an electronic device, and a non-transitory computer-readable storage medium. The obstacle detection method includes that: a first disparity map of an environment image is obtained, the environment image being an image representing information of a space environment where an intelligent device is moving; multiple obstacle pixel areas are determined in the first disparity map; the multiple obstacle pixel areas are clustered to obtain at least one class cluster; and an obstacle detection result is determined according to the obstacle pixel areas belonging to the same class cluster.

Abstract: Provided are a manufacturing method of an organic light emitting diode back plate and the organic light emitting diode back plate. In the manufacturing method of an OLED back plate, pixel openings and light blocking grooves correspondingly above active layers are formed in a pixel definition layer. Then, OLED light-emitting functional layers are formed in the pixel openings and the black light shielding blocks completely covering the active layers are formed in the light shielding grooves by ink jet printing, thereby effectively preventing the TFT elements from being affected by the illumination and ensuring the characteristics of the TFT elements. The structure is simple and the production cost is low.