Abstract: A TFT backplane structure includes a gate insulating layer that includes a three-layered portion, which includes, from bottom up, a dielectric layer, a SiNx layer, and a SiO2 layer, set at a location corresponding to a TFT in order to enhance the TFT reliability, and also includes a double-layered portion, which includes from bottom up, the dielectric layer and at least a portion of the SiNx layer, set at a location corresponding to a storage capacitor, or alternatively a single-layered structure that includes only the dielectric layer set at the location corresponding to the storage capacitor so that the dielectric constant can be increased, the distance between the two storage capacitor electrode plates is reduced, resulting in reducing the capacitor area and improve aperture ratio on the premise of storage capacitance performance.

Abstract: The present disclosure discloses an OLED panel, including: a substrate and a driving thin film transistor, a switching thin film transistor, a storage capacitor, an organic light emitting device, and a light emitting device formed on the substrate, an external voltage signal is stored in the storage capacitor via the switching thin film transistor, the external voltage signal controls a magnitude of on-current of the driving thin film transistor to control the gray scale of the organic light emitting device. The present disclosure further discloses a manufacturing method of OLED panel. In the present disclosure, the drain of the low temperature polysilicon thin film transistor is in contact with the bottom electrode of the organic light emitting device so that the current supplied to the organic light emitting device is stabilized; metal-oxide-semiconductor thin-film transistor has a low leakage current, so that a better circuit-closing effect can be achieved.

Abstract: The present application discloses a method for fabricating a TFT backplane and a TFT backplane. The method includes: providing a substrate; subsequently forming a first active region, a first oxide layer, a nitride layer and a first and a second gate independently of each other on the substrate; removing the nitride layer not covered by the first and second gate electrodes; depositing a second insulating layer; forming a second active region with different material from the first active region on the on the second insulating layer above the second gate electrode; forming a first and a second source electrodes, a first and a second drain electrodes respectively. This method can improve the performance of the TFT backplane.

Abstract: The present invention provides a groove structure employed for printing film formation, wherein the groove structure is located on a substrate, comprises a dam and a groove formed by the dam surrounding, and the dam comprises at least two layers of branch dam layers, which are stacked up, and material of the branch dam layers is silicon nitride or silicon oxide, and material of a top side branch dam layer is silicon oxide, wherein the inclined circumferential surface of the groove, which is surrounded by the branch dam layer manufactured with silicon oxide and the upper surface of the top side branch dam layer are hydrophobic surfaces, and an inclined circumferential surface of the groove, which is surrounded by the branch dam layer manufactured with silicon nitride, is a hydrophilic surface.

Abstract: The invention relates to the field of display, more specifically, to a pixel array and a display circuit for virtual reality. In the invention, two transistors (i.e., a third transistor and a fourth transistor) are respectively connected in parallel to two ends of the two transistors (i.e., the first transistor and the second transistor) controlled by the first enable signal, and as the enable signal accessed the first transistor and the second transistor is a line-by-line scan, and the enable signal accessed the third transistor and the fourth transistor can drive each of the display devices in the a plurality of rows of pixel circuits to be lit at the same time.

Abstract: A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

Abstract: The present disclosure discloses a thin film transistor array substrate including an active layer disposed on a base substrate, wherein the active layer includes a first active region and a second active region located in a same structural layer, the first active region has a material comprising poly-silicon, and includes a first channel region, and a first source region and a first drain region that are located at both sides of the first channel region, respectively, the first source region having a first contact layer disposed thereon, the first drain region having a second contact layer disposed thereon, and materials of both the first and second contact layers being boron-doped poly-silicon; and the second active region has a material comprising metal oxide semiconductor, and includes a second channel region and a second source region and a second drain region that are located at both sides of the second channel region, respectively.

Abstract: Provided are a manufacturing method of a transistor on color filter type organic light emitting display and a transistor on color filter type organic light emitting display. In the manufacturing method of a transistor on color filter type organic light emitting display, after preparing the color filter layer, by coating the zinc oxide solution mixed with lithium on the gate insulation layer in a spin coating manner to form a zinc oxide coating layer mixed with lithium and then, by annealing the zinc oxide coating layer mixed with lithium and patterning the zinc oxide coating layer mixed with lithium to form a channel layer, the process temperature can be as low as 200 Celsius degrees to satisfy the temperature condition of manufacturing the transistor on color filter type organic light emitting display and the operation is easy without using the expensive vacuum equipment.

Abstract: A pixel circuit, a driving method and a display is provided. The pixel circuit comprises a compensation unit which includes a data strobe transistor and a compensation transistor, wherein a first electrode of the data strobe transistor is coupled to a second electrode of the compensation transistor; a first electrode of the compensation transistor is coupled to a gate electrode of the compensation transistor, the gate electrode thereof is coupled to a driving unit through a first node; an external power supply, the driving unit and a light-emitting unit are sequentially coupled in series; a capacitor is located between the first node and the external power supply; the driving unit generates a driving current to drive the light-emitting unit to emit light; a driving transistor of the driving unit shares a same gate electrode with the compensation transistor.

Abstract: The disclosure discloses a common-gate transistor, a pixel circuit, a driving method and a display, including: a first doped region, a second doped region, a third doped region, a fourth doped region and a fifth doped region; the second doped region, the third doped region, the fourth doped region, and the fifth doped region are indirectly communicated through the first doped region, and the second doped region, the third doped region, and the fourth doped region, the fifth doped region and the first doped region are hetero-doped respectively. The two transistors in the common-gate transistor share one gate doped region, i.e., the first doped region, which can not only save one gate doped region, but also can make the gates of the two transistors have the same electrical parameters, and then the cascode effect of the two transistors is more ideal.

Abstract: A pixel circuit, a driving method thereof and a display are disclosed. In a compensation unit, a first electrode of a switching transistor is connected to a gate electrode of a compensation transistor, a second electrode of the switching transistor is connected to a first electrode of the compensation transistor; the gate electrode of the compensation transistor is connected to a driving unit through a first node, a second electrode of the compensation transistor is connected to a data signal; the compensation unit sets a voltage of the first node to be a first voltage; the capacitor is configured to keep the voltage of the first node to be the first voltage; the driving unit is configured to generate a driving current to drive the light emitting unit to emit light; and a driving transistor in the driving unit and the compensation transistor are a common-gate transistor.

Abstract: Provided are a manufacturing method of a transistor on color filter type organic light emitting display and a transistor on color filter type organic light emitting display. In the manufacturing method of a transistor on color filter type organic light emitting display, after preparing the color filter layer, by coating the zinc oxide solution mixed with lithium on the gate insulation layer in a spin coating manner to form a zinc oxide coating layer mixed with lithium and then, by annealing the zinc oxide coating layer mixed with lithium and patterning the zinc oxide coating layer mixed with lithium to form a channel layer, the process temperature can be as low as 200 Celsius degrees to satisfy the temperature condition of manufacturing the transistor on color filter type organic light emitting display and the operation is easy without using the expensive vacuum equipment.

Abstract: A pixel circuit, a driving method and a display device having the pixel circuit are disclosed, wherein the pixel circuit comprises a compensation unit, a driving unit, a light emitting unit, a capacitor, an initialization unit and an external power supply and the driving method comprises a first initialization stage, a second initialization stage, a data writing stage and a light emitting stage.

Abstract: The present disclosure discloses a pixel circuit, a driving method and a display, including: a compensation unit connected with a driving unit; an external power supply, a driving unit and a first light emitting unit sequentially connected in series; a capacitor disposed between a first node and the external power supply; and an initialization unit with a first initialization transistor having a first electrode of connected to the first node, a gate electrode externally connected to a second scan signal, and a second electrode connected to a second light emitting unit, and a second initialization transistor having a first electrode connected to the second light emitting unit, a second electrode connected to an initialization voltage and a gate electrode externally connected to a second scan signal. The first initialization transistor and the second initialization transistor are a dual-gate transistor.

Abstract: The present disclosure relates to an array substrate, a display device, and the manufacturing method thereof. The array substrate includes a substrate, and a first gate electrode layer, a first insulation layer, a trench layer, a source/drain electrode layer, a second insulation layer, a pixel electrode layer and a second gate electrode layer formed on the substrate in sequence. The pixel electrode layer and the second gate electrode layer are spaced apart from each other. The second gate electrode layer, the first gate electrode layer, and the source/drain electrode layer form at least one thin film transistor (TFT) having a dual-gate structure. With such configuration, the driving forces of the array substrate may be greatly enhanced.

Abstract: The invention provides a manufacturing method for TFT backplane, through forming an oxygen-containing a-Si layer on the buffer layer and an oxygen-free a-Si layer on the oxygen-containing a-Si layer so that when using a boron induced SPC to crystallize the a-Si thin film, the contact interface between the a-Si thin film and the buffer layer is the oxygen-containing a-Si layer; because the nucleation is not easy to occur in oxygen-containing a-Si layer during high temperature crystallization, the nucleation only occurs top-down in the boron doped layer on the upper surface of the a-Si thin film for good die quality and thin film uniformity to achieve improve crystalline quality and uniformity. The TFT backplane provided by the invention is made with simple process, wherein the crystalline quality and uniformity of the polysilicon layer is preferable, and can enhance the TFT performance and the driving effect.

Abstract: A TFT backplane structure includes a gate insulating layer that includes a three-layered portion, which includes, from bottom up, a dielectric layer, a SiNx layer, and a SiO2 layer, set at a location corresponding to a TFT in order to enhance the TFT reliability, and also includes a double-layered portion, which includes from bottom up, the dielectric layer and at least a portion of the SiNx layer, set at a location corresponding to a storage capacitor, or alternatively a single-layered structure that includes only the dielectric layer set at the location corresponding to the storage capacitor so that the dielectric constant can be increased, the distance between the two storage capacitor electrode plates is reduced, resulting in reducing the capacitor area and improve aperture ratio on the premise of storage capacitance performance.

Abstract: The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

Abstract: The invention provides a manufacturing method for TFT backplane, through forming an oxygen-containing a-Si layer on the buffer layer and an oxygen-free a-Si layer on the oxygen-containing a-Si layer so that when using a boron induced SPC to crystallize the a-Si thin film, the contact interface between the a-Si thin film and the buffer layer is the oxygen-containing a-Si layer; because the nucleation is not easy to occur in oxygen-containing a-Si layer during high temperature crystallization, the nucleation only occurs top-down in the boron doped layer on the upper surface of the a-Si thin film for good die quality and thin film uniformity to achieve improve crystalline quality and uniformity. The TFT backplane provided by the invention is made with simple process, wherein the crystalline quality and uniformity of the polysilicon layer is preferable, and can enhance the TFT performance and the driving effect.

Abstract: The present disclosure discloses an OLED panel, including: a substrate and a driving thin film transistor, a switching thin film transistor, a storage capacitor, an organic light emitting device, and a light emitting device formed on the substrate, an external voltage signal is stored in the storage capacitor via the switching thin film transistor, the external voltage signal controls a magnitude of on-current of the driving thin film transistor to control the gray scale of the organic light emitting device. The present disclosure further discloses a manufacturing method of OLED panel. In the present disclosure, the drain of the low temperature polysilicon thin film transistor is in contact with the bottom electrode of the organic light emitting device so that the current supplied to the organic light emitting device is stabilized; metal-oxide-semiconductor thin-film transistor has a low leakage current, so that a better circuit-closing effect can be achieved.