Abstract: The present disclosure discloses a pixel circuit, a driving method and a display, including: a compensation unit connected with a driving unit; an external power supply, a driving unit and a first light emitting unit sequentially connected in series; a capacitor disposed between a first node and the external power supply; and an initialization unit with a first initialization transistor having a first electrode of connected to the first node, a gate electrode externally connected to a second scan signal, and a second electrode connected to a second light emitting unit, and a second initialization transistor having a first electrode connected to the second light emitting unit, a second electrode connected to an initialization voltage and a gate electrode externally connected to a second scan signal. The first initialization transistor and the second initialization transistor are a dual-gate transistor.

Abstract: A pixel circuit, a driving method thereof and a display are disclosed. In a compensation unit, a first electrode of a switching transistor is connected to a gate electrode of a compensation transistor, a second electrode of the switching transistor is connected to a first electrode of the compensation transistor; the gate electrode of the compensation transistor is connected to a driving unit through a first node, a second electrode of the compensation transistor is connected to a data signal; the compensation unit sets a voltage of the first node to be a first voltage; the capacitor is configured to keep the voltage of the first node to be the first voltage; the driving unit is configured to generate a driving current to drive the light emitting unit to emit light; and a driving transistor in the driving unit and the compensation transistor are a common-gate transistor.

Abstract: A pixel circuit, a driving method and a display device having the pixel circuit are disclosed, wherein the pixel circuit comprises a compensation unit, a driving unit, a light emitting unit, a capacitor, an initialization unit and an external power supply and the driving method comprises a first initialization stage, a second initialization stage, a data writing stage and a light emitting stage.

Abstract: The present disclosure relates to an array substrate, a display device, and the manufacturing method thereof. The array substrate includes a substrate, and a first gate electrode layer, a first insulation layer, a trench layer, a source/drain electrode layer, a second insulation layer, a pixel electrode layer and a second gate electrode layer formed on the substrate in sequence. The pixel electrode layer and the second gate electrode layer are spaced apart from each other. The second gate electrode layer, the first gate electrode layer, and the source/drain electrode layer form at least one thin film transistor (TFT) having a dual-gate structure. With such configuration, the driving forces of the array substrate may be greatly enhanced.

Abstract: The invention provides a manufacturing method for TFT backplane, through forming an oxygen-containing a-Si layer on the buffer layer and an oxygen-free a-Si layer on the oxygen-containing a-Si layer so that when using a boron induced SPC to crystallize the a-Si thin film, the contact interface between the a-Si thin film and the buffer layer is the oxygen-containing a-Si layer; because the nucleation is not easy to occur in oxygen-containing a-Si layer during high temperature crystallization, the nucleation only occurs top-down in the boron doped layer on the upper surface of the a-Si thin film for good die quality and thin film uniformity to achieve improve crystalline quality and uniformity. The TFT backplane provided by the invention is made with simple process, wherein the crystalline quality and uniformity of the polysilicon layer is preferable, and can enhance the TFT performance and the driving effect.

Abstract: A TFT backplane structure includes a gate insulating layer that includes a three-layered portion, which includes, from bottom up, a dielectric layer, a SiNx layer, and a SiO2 layer, set at a location corresponding to a TFT in order to enhance the TFT reliability, and also includes a double-layered portion, which includes from bottom up, the dielectric layer and at least a portion of the SiNx layer, set at a location corresponding to a storage capacitor, or alternatively a single-layered structure that includes only the dielectric layer set at the location corresponding to the storage capacitor so that the dielectric constant can be increased, the distance between the two storage capacitor electrode plates is reduced, resulting in reducing the capacitor area and improve aperture ratio on the premise of storage capacitance performance.

Abstract: The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

Abstract: The present disclosure discloses an OLED panel, including: a substrate and a driving thin film transistor, a switching thin film transistor, a storage capacitor, an organic light emitting device, and a light emitting device formed on the substrate, an external voltage signal is stored in the storage capacitor via the switching thin film transistor, the external voltage signal controls a magnitude of on-current of the driving thin film transistor to control the gray scale of the organic light emitting device. The present disclosure further discloses a manufacturing method of OLED panel. In the present disclosure, the drain of the low temperature polysilicon thin film transistor is in contact with the bottom electrode of the organic light emitting device so that the current supplied to the organic light emitting device is stabilized; metal-oxide-semiconductor thin-film transistor has a low leakage current, so that a better circuit-closing effect can be achieved.

Abstract: The invention provides a manufacturing method for TFT backplane, through forming an oxygen-containing a-Si layer on the buffer layer and an oxygen-free a-Si layer on the oxygen-containing a-Si layer so that when using a boron induced SPC to crystallize the a-Si thin film, the contact interface between the a-Si thin film and the buffer layer is the oxygen-containing a-Si layer; because the nucleation is not easy to occur in oxygen-containing a-Si layer during high temperature crystallization, the nucleation only occurs top-down in the boron doped layer on the upper surface of the a-Si thin film for good die quality and thin film uniformity to achieve improve crystalline quality and uniformity. The TFT backplane provided by the invention is made with simple process, wherein the crystalline quality and uniformity of the polysilicon layer is preferable, and can enhance the TFT performance and the driving effect.

Abstract: The invention relates to the field of electronic circuit design technology, more particularly, to an AMOLED panel test circuit, by integrating the second test unit, the first test unit and the data line output unit together, and respectively achieves the test of the first test unit and the second test unit of the panel through switching on and off the transistor, avoids the problem that one of the test circuit needs to pass around the end of the panel because the test circuit is not integrated in prior art, which causes big line impedance, and increases the detection rate, and saves the cost.

Abstract: The present invention provides a groove structure employed for printing film formation, wherein the groove structure is located on a substrate (1), and comprises a dam (2) and a groove (3) formed by the dam (2) surrounding, and the dam (2) comprises at least two layers of branch dam layers (21), which are stacked up, and material of the branch dam layers (21) is silicon nitride or silicon oxide, and material of a top side branch dam layer (21) is silicon oxide, wherein the inclined circumferential surface of the groove, which is surrounded by the branch dam layer (21) manufactured with silicon oxide and the upper surface of the top side branch dam layer (21) are hydrophobic surfaces, and an inclined circumferential surface of the groove, which is surrounded by the branch dam layer (21) manufactured with silicon nitride, is a hydrophilic surface.

Abstract: The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

Abstract: The present disclosure relates to a display device, a pixel driving circuit and a driving method thereof. The OLED pixel driving circuit includes an electroluminescent devices, first to seventh switching elements and a storage capacitor. The sixth switching element has a first terminal coupled to a first node and a second terminal coupled to a third node, the seventh switching element has a first terminal receiving an initialization voltage, and a second terminal coupled to the first node.

Abstract: A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

Abstract: The invention provides a TFT backplane structure and manufacturing method thereof. The TFT backplane structure uses the three-layered structure, from bottom up, dielectric layer (41), SiNx layer (42), and SiO2 layer (43), for the gate insulating layer (4) corresponding to the location of the TFT (T), to enhance the TFT reliability; uses a double-layered gate insulating layer (4), from bottom up, the dielectric layer (41), and at least a portion of SiNx layer (42), at the location corresponding to the storage capacitor (C), or a single-layered gate insulating layer (4), i.e., the dielectric layer (4), at the location corresponding to the storage capacitor (C), the dielectric constant can be increased, the distance between the two storage capacitor electrode plates is reduced, resulting in reducing the capacitor area and improve aperture ratio on the premise of storage capacitance performance.

Abstract: An OLED display device includes an array of pixel units. Each pixel unit includes a pixel driving circuit and an OLED. The pixel units in each column is connected to a data line. The pixel units in each row is connected to a first scan line for selecting and activating pixel units to receive a data voltage provided by the data line. The pixel units in each row is connected to a second scan line for selecting and resetting pixel units. An emission control line connected to the pixel units in each odd-numbered row is connected to a first clock signal end. An emission control line connected to the pixel units in each even-numbered row is connected to a second clock signal end. Two emission control signals outputted by the first and second clock signal ends have the same period and have a stable phase difference between 90° and 180°.

Abstract: The invention relates to the field of display, more specifically, to a pixel array and a display circuit for virtual reality. In the invention, two transistors (i.e., a third transistor and a fourth transistor) are respectively connected in parallel to two ends of the two transistors (i.e., the first transistor and the second transistor) controlled by the first enable signal, and as the enable signal accessed the first transistor and the second transistor is a line-by-line scan, and the enable signal accessed the third transistor and the fourth transistor can drive each of the display devices in the a plurality of rows of pixel circuits to be lit at the same time.

Abstract: The invention provides a TFT backplane structure and manufacturing method thereof. The TFT backplane structure uses the three-layered structure, from bottom up, dielectric layer (41), SiNx layer (42), and SiO2 layer (43), for the gate insulating layer (4) corresponding to the location of the TFT (T), to enhance the TFT reliability; uses a double-layered gate insulating layer (4), from bottom up, the dielectric layer (41), and at least a portion of SiNx layer (42), at the location corresponding to the storage capacitor (C), or a single-layered gate insulating layer (4), i.e., the dielectric layer (4), at the location corresponding to the storage capacitor (C), the dielectric constant can be increased, the distance between the two storage capacitor electrode plates is reduced, resulting in reducing the capacitor area and improve aperture ratio on the premise of storage capacitance performance.

Abstract: The present disclosure relates to a display device, a pixel driving circuit and a driving method thereof. The OLED pixel driving circuit includes an electroluminescent devices, first to seventh switching elements and a storage capacitor. The sixth switching element has a first terminal coupled to a first node and a second terminal coupled to a third node, the seventh switching element has a first terminal receiving an initialization voltage, and a second terminal coupled to the first node.

Abstract: An organic light-emitting diode (OLED) pixel compensation circuit includes a driving module, a compensation module, an OLED lighting module, and a precharging module. The compensation module is connected to the driving module and is configured to receive a voltage of an external first power for compensating a turn-on voltage of the driving module. The precharging module is connected to the OLED lighting module and is configured to receive a voltage of an external second power for precharging the OLED lighting module. The driving module is connected to the OLED lighting module and is configured to remain on under compensation by the compensation module for receiving the voltage of the external first power to obtain a driving voltage for driving the OLED lighting module to emit light, thereby driving the OLED lighting module to emit light.