Abstract: A transducer includes a substrate, a lower electrode, an insulating layer, an oscillating membrane, and an upper electrode. The substrate has a cave and an island-shaped protrusion defining the cave. The lower electrode is disposed in the cave and on the island-shaped protrusion of the substrate. The insulating layer is disposed on the lower electrode. The oscillating membrane includes a contact portion and an oscillating portion. The contact portion is in contact with the insulating layer and is located between the oscillating portion and the insulating layer. A cavity is located between the oscillating portion and the cave of the substrate. The upper electrode is disposed on the oscillating membrane. Moreover, a manufacturing method of the transducer is also provided.

Abstract: Apparatuses and systems for providing multiple structures to enable flexibility of a multiple transmission and reception point ultra-reliable low-latency communication (M-TRP URLLC) operation and reduce measurement effort and power consumption from a transceiving apparatus such as a UE are provided. The techniques disclosed here feature a transceiving apparatus including a transceiver and circuitry. The transceiver, in operation, receives signals from multiple transmission and reception points (M-TRPs) in a network on at least physical downlink shared channels (PDSCHs). The circuitry, in operation, performs beam failure recovery (BFR) by evaluating beam failure detection (BFD) and candidate new beam detection (CBD) for the signals from at least a first one of the M-TRPs.

Abstract: Embodiments of the present disclosure provide semiconductor devices having a front side to backside conductive path through a source/drain feature. In some embodiments, the front side to backside conductive path may be formed through a source/drain feature in a standard cell. The other embodiments, the front side to backside conductive path is formed through a source/drain feature in a filler cell. The front side to backside conductive path enables flexible routing for local connections, backside signal connections, and/or backside power rail connection.

Abstract: An integrated circuit (IC) device includes first and second power rails extending in a first direction, a first plurality of active areas extending in the first direction, and a second plurality of active areas extending in the first direction and offset from the first plurality of active areas in the first direction. The first power rail is electrically connected to first active areas of each of the first and second pluralities of active areas, the second power rail is electrically connected to second active areas of each of the first and second pluralities of active areas, the first plurality of active areas includes a third active area located between the first and second active areas and electrically connected to the second power rail, and the first and second active areas of the second plurality of active areas are adjacent active areas of the second plurality of active areas.

Abstract: A display module includes a display panel and a support backplane located on a side of the display panel where a non-display surface of the display panel is located. The support backplane has a first region and a second region disposed on a periphery of the first region. At least a portion of a portion, located in the second region, of the support backplane is etched away to form at least one groove.

Abstract: Multigate devices and methods for fabricating such are disclosed herein. An exemplary multigate device includes a first FET disposed in a first region; and a second FET disposed in a second region of a substrate. The first FET includes first channel layers disposed over the substrate, and a first gate stack disposed on the first channel layers and extended to warp around each of the first channel layers. The second FET includes second channel layers disposed over the substrate, and a second gate stack disposed on the second channel layers and extended to warp around each of the second channel layers. A number of the first channel layers is greater than a number of the second channel layers. A bottommost one of the first channel layers is below a bottommost one of the second channel layers.

Abstract: In an embodiment, a device includes: a first interconnect structure including metallization patterns; a second interconnect structure including a power rail; a device layer between the first interconnect structure and the second interconnect structure, the device layer including a first transistor, the first transistor including an epitaxial source/drain region; and a conductive via extending through the device layer, the conductive via connecting the power rail to the metallization patterns, the conductive via contacting the epitaxial source/drain region.

Abstract: A semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an epitaxial source/drain region adjacent the channel region, wherein the epitaxial source/drain region extends through the first insulating fin. The semiconductor device further includes a front-side interconnect structure on a first side of the device layer; and a backside interconnect structure on a second side of the device layer opposite the first side of the device layer. The backside interconnect structure comprises a backside source/drain contact that is electrically connected to the epitaxial source/drain region.

Abstract: An integrated circuit includes a semiconductor substrate, an isolation region extending into, and overlying a bulk portion of, the semiconductor substrate, a buried conductive track comprising a portion in the isolation region, and a transistor having a source/drain region and a gate electrode. The source/drain region or the gate electrode is connected to the buried conductive track.

Abstract: In an embodiment, a device includes: a first interconnect structure including metallization patterns; a second interconnect structure including a power rail; a device layer between the first interconnect structure and the second interconnect structure, the device layer including a first transistor, the first transistor including an epitaxial source/drain region; and a conductive via extending through the device layer, the conductive via connecting the power rail to the metallization patterns, the conductive via contacting the epitaxial source/drain region.

Abstract: The present invention relates to an immunochromatographic assay device, comprising: a cover plate; an immunochromatographic assay kit; and a sample loading pad. A wet zone is defined by the cover plate and at least part of a sample loading portion of the sample loading pad disposed close to an installation position of the immunochromatographic assay kit. The height of the wet zone satisfies the following condition: when flowing into the wet zone, a sample solution is driven by capillary action to flow from a surface of the sample loading portion toward the immunochromatographic assay kit.

Abstract: A frequency offset (FO) estimation method includes: sampling a frequency-modulated repetition-coded segment of a packet to generate a plurality of samples; obtaining a frequency deviation (FD) value for each of a plurality of target samples selected from the plurality of samples; and estimating an FO value through accumulating complete FD values of the plurality of target samples.

Abstract: Methods of performing backside etching processes on source/drain regions and gate structures of semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a first interconnect structure on a front-side of the first transistor structure; and a second interconnect structure on a backside of the first transistor structure, the second interconnect structure including a first dielectric layer on the backside of the first transistor structure; a contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and first spacers along sidewalls of the contact between the contact and the first dielectric layer, sidewalls of the first spacers facing the first dielectric layer being aligned with sidewalls of the source/drain region of the first transistor structure.

Abstract: In an exemplary aspect, the present disclosure is directed to a device. The device includes a semiconductor substrate, a stack of semiconductor layers over the semiconductor substrate, a gate structure over and between the stack of semiconductor layers, where the gate structure engages with the stack of semiconductor layers. Moreover, the device also includes a silicide layer extending along sidewall surfaces of the stack of semiconductor layers, and a source/drain feature on a sidewall surface of the silicide layer.

Abstract: Systems and methods for altering the geometry of a fluid channel to prevent upstream mobility of bacteria, using angled obstacles on the interior of the channel that among other things creates vortices that restrict the mobility. An optimized geometry can be realized by an artificial intelligence algorithm or similar methods based on performance of various configurations of obstacle parameters.

Abstract: An intervention-based shared control method and apparatus in forward collision avoidance scenario of autonomous vehicle includes: acquiring vehicle state data of the autonomous vehicle and inputting the vehicle state data into a constructed forward collision avoidance control model to obtain an optimal nominal collision avoidance trajectory of the autonomous vehicle; and acquiring steering input data of a driver in controlling the autonomous vehicle, and obtaining the shared control method in the forward collision avoidance scenario of the autonomous vehicle. The present disclosure proposes a vehicle model decoupling method for control solution and risk prediction in a high-velocity forward collision avoidance scenario.

Abstract: A computer-implemented method may include (1) causing a radar component to emit one or more radar signals and (2) causing the radar component to analyze one or more return signals. Also disclosed is a method for forming a 3D liquid crystal polarization hologram optical element and a method for characterizing diffractive waveguides includes directing light onto a structure and measuring the diffracted light to capture at least one image of the structure. Lastly, disclosed is a method of pattering organic solid crystals and a method directing a beam of input light to a surface of an optical material to determine crystallographic and optical parameters of the optical material. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a fin structure with first semiconductor material layers and second semiconductor material layers alternately stacked over a substrate and forming fin spacers on sidewalls of the fin structure. The method further includes etching the fin structure to form a source/drain recess exposing inner sidewalls of the fin spacers and forming an isolating feature covering lower portions of the inner sidewalls of the fin spacers. The method further includes forming a source/drain structure covering upper portions of the inner sidewalls of the fin spacers and removing the first semiconductor material layers. The method further includes forming a gate structure wrapping around the second semiconductor material layers.

Abstract: An integrated circuit includes a semiconductor substrate, an isolation region extending into, and overlying a bulk portion of, the semiconductor substrate, a buried conductive track comprising a portion in the isolation region, and a transistor having a source/drain region and a gate electrode. The source/drain region or the gate electrode is connected to the buried conductive track.