Abstract: A method for security implementation is provided. In the method, a first committee node receives first request information for requesting an authorization certificate for a first issuing node; and the first committee node generates a first digital signature jointly with at least one second committee node. The first digital signature is used to generate the authorization certificate for the first issuing node; and the authorization certificate is used to prove that the first issuing node has a first permission, which refers to a permission to issue certificates for a plurality of user nodes managed by the first issuing node. Provided is also a method of security implementation performed by a proxy server, and an apparatus of security implementation applied to a proxy server.

Abstract: A security implementation method, includes: receiving, by an issuing node, first request information sent by a first user node, the first request information being used to request a first credential, where the first credential is used to verify an identity of the first user node; and generating, by the issuing node, the first credential in response to the first request information in a case where the issuing node has a first authority, where the first authority refers to an authority capable of generating a credential, and the first authority is jointly granted to the issuing node by multiple committee nodes.

Abstract: Embodiments of this application provide a security implementation method and apparatus, a device, and a network element. The method includes: receiving, by a first network element, first information, where the first information includes a device authentication code DAC and/or a service authentication code SAC; and the DAC is used to authenticate an association relationship between a first device and at least one second device, and the SAC is used to authenticate whether the first device and/or the at least one second device support/supports a service type indicated by service identifier information, and/or whether the first device and/or the at least one second device support/supports a data type indicated by data identifier information.

Abstract: This invention relates to a method for entire removal of a space truss, and an assistive support mechanism therefor. The assistive support mechanism is arranged on a vertical support rod of a truss structure, the assistive support mechanism comprises an assistive support assembly, a lattice support member, and a conversion platform. The lifting assembly is arranged at a top of the conversion platform and comprises a stranded wire, a lifting member, and a control member. The method for entire removal of a space truss comprises mounting the assistive support mechanism, and performing initial removal of the truss structure; lowering the truss structure; and then performing secondary removal of the entire space truss. The major removal work is done on the ground, thereby reducing the requirement for removal-assisting measures and the operational risks, and improving the working efficiency.

Abstract: A terminal device includes a processor and a memory. The memory is configured to store a computer program, the processor is configured to invoke and execute the computer program stored in the memory, to cause the terminal device to perform: acquiring an authorization credential of a first network element, where the authorization credential is used by the terminal device to verify whether a transmission of sensing data is authorized, and the authorization credential comprises a first digital signature; and authorizing the transmission of the sensing data, in a case where the authorization credential is verified successfully based on the first digital signature.

Abstract: The method for implementing security, applicable to a first device, includes: acquiring an authorization certification of a first network element, wherein the authorization certification is used to verify whether the first network element is authorized to receive data, the data being originated from at least one second device associated with the first device; and the authorization certification comprises a first digital signature; and determining that the first network element is authorized to receive the data from the at least one second device based on a successful verification on the authorization certification based on the first digital signature.

Abstract: A method for growing a periodically-poled nonlinear crystal may include placing a seed crystal into a melt to form a seed crystal melt mixture, where the seed crystal may include at least one of strontium tetraborate (SBO) or lithium triborate (LBO), and where the melt includes at least one of a mixture of Sr, B, and O or a mixture of Li, B, and O. The method may further include heating the seed crystal melt mixture to a predetermined temperature until the periodically-poled nonlinear crystal forms.

Abstract: In one embodiment a semiconductor structure comprises a semiconductor substrate, a trench dielectric layer disposed in a trench of the semiconductor substrate, a first source/drain region disposed in contact with the semiconductor substrate, a gate and a second source/drain region. The gate is disposed between the first source/drain region and the second source/drain region. The semiconductor structure further comprises a dielectric isolation layer disposed between the semiconductor substrate and the second source/drain region.

Abstract: A battery detection system includes a battery assembly and an electronic device. The battery assembly includes a first connector and a detection module connected to the first connector. The electronic device includes a second connector and a control module connected to the second connector. When the first connector is connected to the second connector, the detection module is configured to output first identification information to the electronic device through the first connector. When the second connector receives the first identification information, the control module confirms that the battery assembly is in a connected state. After the first connector is disconnected from the second connector, the detection module generates and outputs second identification information. When information received by the second connector changes from the first identification information to the second identification information, the control module confirms that the battery assembly is disconnected.

Abstract: Embodiments of present invention provide a resistive random-access memory (RRAM) cell. The RRAM cell includes a bottom electrode; a metal oxide layer, the metal oxide layer having a central portion that is in direct contact with the bottom electrode, a peripheral portion that is nonplanar with the central portion, and a vertical portion between the central portion and the peripheral portion; and a top electrode directly above the metal oxide layer. A method of manufacturing the RRAM cell is also provided.

Abstract: A nonlinear crystal including stacked strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency doubling stage of a laser assembly to generate laser output light having a wavelength in the range of about 180 nm to 200 nm. One or more fundamental laser beams are frequency doubled, down-converted and/or summed using one or more frequency conversion stages to generate an intermediate frequency light with a corresponding wavelength in the range of about 360 nm to 400 nm, and then the final frequency converting stage utilizes the nonlinear crystal to double the frequency of the intermediate frequency light to generate the desired laser output light at high power. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

Abstract: Embodiments of present invention provide a resistive random-access memory (RRAM) cell. The RRAM cell includes a bottom electrode; a metal oxide layer, the metal oxide layer having a central portion that is in direct contact with the bottom electrode, a peripheral portion that is nonplanar with the central portion, and a vertical portion between the central portion and the peripheral portion; and a top electrode directly above the metal oxide layer. A method of manufacturing the RRAM cell is also provided.

Abstract: An inspection system may include an illumination source to generate an illumination beam, illumination optics to direct the illumination beam to a sample at an off-axis angle along an illumination direction, and collection optics to collect scattered light from the sample in a dark-field mode, where the scattered light from the sample includes surface haze associated with light scattered from a surface of the sample, and where at least a at least a portion of the surface haze has elliptical polarizations. The system may further include pupil-plane optics to convert the polarizations of the surface haze across the pupil to linear polarization that is aligned parallel to a selected haze orientation direction. The system may include a linear polarizer to reject the surface haze aligned parallel to this haze orientation direction and a detector to generate a dark-field image of the sample based on light passed by the linear polarizer.

Abstract: An electronic device includes a cell, a circuit board, and a cell protection unit. The circuit board is provided in the electronic device and configured to control the electronic device. The circuit board is electrically coupled to the cell, and the cell protection unit is provided on the circuit board. The cell protection unit is integrated with the circuit board, so as to facilitate heat dissipation of the cell, prolong the service life of the cell, speed up the production cycle of the cell, and reduce the production cost of the cell.

Abstract: A method including forming an oxide layer on a first substrate and forming a second substrate on the oxide layer. Doping a first section of the second substrate while not doping a second section of the second substrate. Forming a first nano device on the second section of the second substrate and forming a second nano device on first section of the second substrate. Flipping the first substrate over to allow for backside processing of the substrate and forming at least one backside contact connected to the first nano device while backside contacts are not formed or connected to the second nano device.

Abstract: A nonlinear crystal grating assembly including two integral nonlinear crystal grating structures having inverted crystal axes and having parallel spaced-apart mesas with predetermined mesa widths arranged such that, when assembled in an interdigitated configuration, the mesas of the two grating structures form an alternating grating pattern that is aligned with a propagation direction of input light, thereby creating a periodic structure for quasi-phase-matching (QPM). The nonlinear crystal grating structures are formed using strontium tetraborate, lithium triborate or another nonlinear crystal material. The nonlinear crystal grating assembly is utilized in a laser assembly in which fundamental wavelengths are doubled and/or summed using intermediate frequency conversion stages, and then a final frequency converting stage utilizes the nonlinear crystal grating assembly to double or sum one or more intermediate light beam frequencies to generate laser output light at high power and photon energy levels.

Abstract: A nonlinear crystal including stacked strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency doubling stage of a laser assembly to generate laser output light having a wavelength in the range of about 180 nm to 200 nm. One or more fundamental laser beams are frequency doubled, down-converted and/or summed using one or more frequency conversion stages to generate an intermediate frequency light with a corresponding wavelength in the range of about 360 nm to 400 nm, and then the final frequency converting stage utilizes the nonlinear crystal to double the frequency of the intermediate frequency light to generate the desired laser output light at high power. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

Abstract: A nonlinear crystal grating assembly including two integral nonlinear crystal grating structures having inverted crystal axes and having parallel spaced-apart mesas with predetermined mesa widths arranged such that, when assembled in an interdigitated configuration, the mesas of the two grating structures form an alternating grating pattern that is aligned with a propagation direction of input light, thereby creating a periodic structure for quasi-phase-matching (QPM). The nonlinear crystal grating structures are formed using strontium tetraborate, lithium triborate or another nonlinear crystal material. The nonlinear crystal grating assembly is utilized in a laser assembly in which fundamental wavelengths are doubled and/or summed using intermediate frequency conversion stages, and then a final frequency converting stage utilizes the nonlinear crystal grating assembly to double or sum one or more intermediate light beam frequencies to generate laser output light at high power and photon energy levels.

Abstract: An electronic device includes a cell, a circuit board, and a cell protection unit. The circuit board is provided in the electronic device and configured to control the electronic device. The circuit board is electrically coupled to the cell, and the cell protection unit is provided on the circuit board. The cell protection unit is integrated with the circuit board, so as to facilitate heat dissipation of the cell, prolong the service life of the cell, speed up the production cycle of the cell, and reduce the production cost of the cell.

Abstract: In one embodiment a semiconductor structure comprises a semiconductor substrate, a trench dielectric layer disposed in a trench of the semiconductor substrate, a first source/drain region disposed in contact with the semiconductor substrate, a gate and a second source/drain region. The gate is disposed between the first source/drain region and the second source/drain region. The semiconductor structure further comprises a dielectric isolation layer disposed between the semiconductor substrate and the second source/drain region.