Abstract: Systems, methods, apparatus, and techniques are provided for producing encoded trellis coded modulation (TCM) data from user information. Encoding parameters are selected based on a target information rate. The encoding parameters include a first dimensionality value and a second dimensionality value. A first part of the user information is encoded based on the first dimensionality value to produce a first number of coded bits, and a second part of the user information is encoded based on the second dimensionality value to produce a second number of coded bits.

Abstract: An error correction system includes an iterative code that employs an interleaved component code and an embedded parity component code. In some embodiments, on the transmission side, input signals received at an input node are encoded based on the interleaved code, which encodes an interleaved version of the input data to produce a first set of codewords. At least a portion of the first set of codewords preferably is divided into a plurality of symbols which are encoded based on the embedded parity code to provide encoded data. Similarly, in some embodiments, on the receiving side, received data are detected to produce detected information and soft outputs. The detected information is decoded based on the embedded parity code to obtain decoded information. The decoded information preferably is used, together with other soft information, by an interleaved decoder to generate reliability metrics for biasing a subsequent decoding iteration.

Abstract: A system including a state set module to arrange states of a memory cell in three sets. The memory cell stores three bits when programmed to a state. Each set includes three rows of bits. In a set, a row includes one of the three bits of the states. The first, second, and third rows of the first, second, and third sets include a first number of state transitions. The second, third, and first rows of the first, second, and third sets include a second number of state transitions. The third, first, and second rows of the first, second, and third sets include a third number of state transitions. A write module writes first, second, and third portions of data to a plurality of memory cells, each memory cell storing the three bits when programmed to a state, using states selected respectively from the first, second, and third sets.

Abstract: Embodiments herein provide data recovery techniques and configurations for solid state memory devices. For example, a method includes identifying a hard error associated with a cell of a solid state memory device, providing a location of the cell having the identified hard error to a decoder to recover data originally programmed to the cell, and recovering the data originally programmed to the cell using the decoder. Other embodiments may be described and/or claimed.

Abstract: An integrated circuit including a first interface, a decoder, and a controller. The first interface is configured to (i) write encoded data in a portion of a flash memory, and (ii) read the encoded data back from the flash memory. The decoder is configured to (i) according to an error correction code, decode the encoded data read back from the flash memory, and (ii) based on the decoded data, determine a number of decoding errors corresponding to the decoded data. The controller is configured to, in response to the number of decoding errors being greater than or equal to a first threshold, cease accessing the portion of the flash memory. The first threshold is less than a number of errors correctable by the error correction code for the portion of the flash memory.

Abstract: In one embodiment, the present invention includes an error correction method. The error correction method comprises receiving a digital signal and processing the digital signal to perform a first error correction. The first error correction includes a first correction for data insertions or deletions and a first correction of data errors to generate a reference signal. The reference signal corresponds to the digital signal having been corrected to a first correction accuracy. The digital signal and the reference signal may be processed to perform a second correction for data insertions or deletions to generate a synchronized signal. The second correction of the digital signal is based on the reference signal, and the correction accuracy of the second correction is more accurate than the first correction accuracy.

Abstract: Systems and methods are provided for decoding data using hard decisions and soft information. In particular, the systems and methods described herein are directed to decoders having variable nodes and check nodes, each with multiple states. The systems and methods include receiving, at a decoder during a first iteration, values for each of a plurality of variable nodes, and determining, during a second iteration, one or more indications for each of a plurality of check nodes based on the one or more values of the variable nodes received during the first iteration. The methods further include updating, at the decoder during the second iteration, the values for each of the variable nodes based on the values of the respective variable node received during the first iteration, and the indications for each of the plurality connected check nodes during the first iteration.

Abstract: Apparatus, methods, and other embodiments associated with group based read reference voltage management in flash memory are described. According to one embodiment, an apparatus includes a partition logic, a Vref memory, and a Vref logic. The partition logic is configured to assign respective cells in a flash memory device to respective groups of cells. The Vref memory is configured to store respective Vref values mapped to respective groups of cells. The read logic is configured to read a cell in the flash memory by determining a group to which the cell is assigned; determining a Vref mapped to the group; and using the Vref value to read the cell. In one embodiment, the apparatus includes an adaptation logic configured to selectively adapt respective Vref values mapped to the respective groups of cells.

Abstract: A system including a divider module, a read module, a counting module, and a reference voltage setting module. The divider module is configured to select a voltage range in which to adjust a reference voltage used to read memory cells of nonvolatile memory, and to divide the voltage range into a plurality of bins, where each of the bins is defined by a pair of voltages. The read module is configured to perform a plurality of read operations by applying, to the memory cells, the voltages defining the bins. The counting module is configured to generate, in each of the read operations, counts of a number of memory cells having threshold voltages in each of the bins. The reference voltage setting module is configured to adjust, based on the counts, the reference voltage to a voltage selected from one or more voltages associated with the bins.

Abstract: The present disclosure describes techniques for flash-based soft information generation. In some aspects a flash-memory device includes a soft information generator configured to determine soft information for a data value stored by a flash-memory cell. The soft information includes fewer bits than a number of data bits read from the flash-memory cell from which the soft information is generated. When the flash-memory device transfers the soft information to a memory controller, fewer bits per data value are transferred. By so doing, an efficiency of a data link between the flash memory device and the memory controller may be improved.

Abstract: Embodiments of the present disclosure provide apparatuses and methods for determining a compacting arrangement to store logical addressable units, which include compressed data sectors, into hardware addressable units of a storage device. The compacting arrangement is based on compression information associated with the logical addressable units. A write module is used to write the compressed data sectors to the storage device according to the compacting arrangement.

Abstract: Methods, apparatuses, and systems for comparing threshold voltages of a plurality of flash memory cells to a plurality of reference voltages. A number of flash memory cells having threshold voltages that fall within each bin of a plurality of bins is determined. The plurality of bins each represent a plurality of threshold voltage ranges. A threshold voltage distribution of the plurality of flash memory cells is calculated based at least in part on the number of flash memory cells that fall into each of the bins.

Abstract: An apparatus includes, in at least one aspect, a memory interface configured to connect with a plurality of multi-level memory cells and a circuitry coupled with the memory interface. The plurality of multi-level memory cells include a first page and a second page. The first page is associated with bits of a first significance. The second page is associated with bits of a second significance. The circuitry is configured to map a first portion of an encoded data sector to the first page and map a second portion of the encoded data sector to the second page. The first portion excludes the second portion and the second portion excludes the first portion such that each of the first page and the second page contains different data from the encoded data sector.

Abstract: Systems, methods, and other embodiments associated with soft decoding for a quantized channel are described. According to one embodiment, a method includes repetitively controlling the soft decoder to attempt to decode the signal based, at least in part, on a reliability measure selected from a pre-determined collection of reliability measures. When the soft decoder fails to decode the signal, the method includes computing a new reliability measure and repetitively controlling the soft decoder to attempt to decode the signal based, at least in part, on the new reliability measure. When the soft decoder decodes the signal with the new reliability measure, the method includes adding the new reliability to the pre-determined collection of reliability measures.

Abstract: Systems and methods are provided for recovering data stored in memory. A group of data is encoded using a first layer of code to form a first encoded group of data. Individual portions of the first encoded group of data are then encoded using a second layer of code to form a second encoded group of data. A processor may request access to an individual portion of the group of data. The encoded version of the requested individual portion is retrieved from memory and decoded using the second layer of code to recover the requested individual portion. If the recovery of the requested individual portion fails, the remaining encoded portions of the group are retrieved from memory and decoded using the first layer of code to recover the requested individual portion.

Abstract: In a method of encoding data, a data block is received; transformed, error-corrected encoded data blocks based on the received data block are generated and one is selected based on a constraint; and the selected data block is transmitted. The method may include adding, to the received data block, pivot data corresponding to different transformations. In an apparatus, an encoded data generator is configured to generate different encoded data block candidates based on a received data block, and a selector is configured to select one of the candidates to output as encoded data based on a constraint. The encoded data generator may include a transformer configured to apply one or more transformations to the received data block, and an error correction code (ECC) encoder configured to apply error correction to the received data block. The encoded data generator and the selector may be included in a transmitter.

Abstract: Embodiments provide a method comprising receiving input data comprising a plurality of data sectors; compressing the plurality of data sectors to generate a corresponding plurality of compressed data sectors; splitting a compressed data sector of the plurality of compressed data sectors to generate a plurality of split compressed data sectors; and storing the plurality of compressed data sectors, including the plurality of split compressed data sectors, in a plurality of memory pages of a memory.

Abstract: A system including a read module to perform a first read operation to determine a state of a memory cell, and in response to a first failure to decode data read from the memory cell, perform second and third read operations to determine the state of the memory cell. The memory cell has first and second threshold voltages when programmed to first and second states, respectively. A shift detection module detects, in response to a second failure to decode data read from the memory cell in the second and third read operations, a shift in a distribution of at least one of the first and second threshold voltages. A binning module divides the distribution into a plurality of bins. A log-likelihood ratio (LLR) module generates LLRs for the plurality of bins based on a variance of the distribution and adjusts the LLRs based on an amount of the shift.

Abstract: A system including a divider module, a read module, a counting module, and a reference voltage setting module. The divider module is configured to select a voltage range in which to adjust a reference voltage used to read memory cells of nonvolatile memory, and to divide the voltage range into a plurality of bins, where each of the bins is defined by a pair of voltages. The read module is configured to perform a plurality of read operations by applying, to the memory cells, the voltages defining the bins. The counting module is configured to generate, in each of the read operations, counts of a number of memory cells having threshold voltages in each of the bins. The reference voltage setting module is configured to adjust, based on the counts, the reference voltage to a voltage selected from one or more voltages associated with the bins.

Abstract: A system including a write module to write pilot data at predetermined locations in a page of memory cells that are interspersed with user data in the page. The pilot data has a first predetermined pattern and provides an indication of a disturbance experienced by the user data due to noise and a read, write, or erase operation performed on the page. A read module reads data from the predetermined locations subsequent to writing the pilot data. A signal processing module compares the data read from the predetermined locations with the pilot data and estimates, based on the comparison of the data read from the predetermined locations in the page with the pilot data, and the first predetermined pattern of the pilot data, the disturbance experienced by the user data due to the noise and the read, write, or erase operation performed on the page.