Abstract: A light emitting device including a light emitting unit and a phosphor resin layer is provided. The light emitting unit has a top surface and a bottom surface opposite to each other. Each of the light emitting units includes two electrodes. The two electrodes are disposed on the bottom surface. The phosphor resin layer is disposed on the top surface of the light emitting unit. One side of the phosphor resin layer has a mark. One of the two electrodes is closer to the mark with respect to the other one of the two electrodes.

Abstract: A light emitting device including a first light emitting unit, a second light emitting unit, a heat dissipation substrate, a plurality of first bumps and a plurality of second bumps is provided. The heat dissipation substrate is disposed between the first light emitting unit and the second light emitting unit. The first bumps are connected between the first light emitting unit and the heat dissipation substrate. The second bumps are connected between the second light emitting unit and the heat dissipation substrate.

Abstract: A light emitting device including a first light emitting unit, a second light emitting unit, a heat dissipation substrate, a plurality of first bumps and a plurality of second bumps is provided. The heat dissipation substrate is disposed between the first light emitting unit and the second light emitting unit. The first bumps are connected between the first light emitting unit and the heat dissipation substrate. The second bumps are connected between the second light emitting unit and the heat dissipation substrate.

Abstract: A light emitting device including a light emitting unit and a phosphor resin layer is provided. The light emitting unit has a top surface and a bottom surface opposite to each other. Each of the light emitting units includes two electrodes. The two electrodes are disposed on the bottom surface. The phosphor resin layer is disposed on the top surface of the light emitting unit. One side of the phosphor resin layer has a mark. One of the two electrodes is closer to the mark with respect to the other one of the two electrodes.

Abstract: A manufacturing method of a semiconductor light-emitting device is provided. Steps of the manufacturing method includes: providing a substrate; placing at least one light-emitting unit on the substrate; encapsulating the at least one light-emitting unit onto the substrate by a phosphor layer and a reflective layer. The phosphor layer at least covers an upper surface of the at least one light-emitting unit, and the reflective layer surrounds the at least one light-emitting unit.

Abstract: A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a plurality of through holes penetrating the base layer, a first metal layer disposed on the first surface, and comprising an encircling portion and a plurality of upper pads arranged separately, wherein the encircling portion surrounds the upper pads to form a trench between the encircling portion and the upper pads, and a second metal layer disposed on the second surface and comprising a plurality of bottom pads arranged separately, wherein the bottom pads are electrically connected to the upper pads via the through holes respectively. The through holes are positioned under the upper pads and the encircling portion of the first metal layer is electrically floating.

Abstract: A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a plurality of through holes penetrating the base layer, a first metal layer disposed on the first surface, and a second metal layer disposed on the second surface. The first metal layer includes a closed-loop trench. A part of the second metal layer is electrically connected to the first metal layer via the through holes. The through holes are positioned at an inner part the closed-loop trench.

Abstract: A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a plurality of through holes penetrating the base layer, a first metal layer disposed on the first surface, and a second metal layer disposed on the second surface. The first metal layer includes a closed-loop trench. A part of the second metal layer is electrically connected to the first metal layer via the through holes. The through holes are positioned at an inner part the closed-loop trench.

Abstract: A semiconductor light-emitting device that includes a substrate, at least one light-emitting unit arranged on the substrate, a phosphor layer at least covering an upper surface of the at least one light-emitting unit, and a reflective layer arranged on the substrate is provided. The reflective layer surrounds the at least one light-emitting unit. A manufacturing method of a semiconductor light-emitting device is also provided.