Abstract: A semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a metal clip, and a molding encapsulation. The low side FET is flipped and is attached to a first die paddle of the lead frame. The lead frame comprises one or more voltage input (Vin) leads; a gate lead; one or more switching node (Lx) leads; a first die paddle; a second die paddle; and an end paddle. Each of an exposed bottom surface of the one or more Lx leads is directly connected to an exposed bottom surface of the end paddle. A longitudinal direction of an exposed bottom surface of the gate lead is perpendicular to a longitudinal direction of each of the exposed bottom surface of the one or more Lx leads. An entirely of each of the one or more Vin leads is of the full thickness.

Abstract: The embodiments of the present disclosure provide a detection method, apparatus for automatic driving sensor, and electronic device. The method includes: pre-establishing a standard association relationship, the sensor to-be-detected is used for capturing in a fixed scene, and a corresponding capturing result is displayed.

Abstract: A semiconductor package includes a lead frame, a chip, and a molding encapsulation. The lead frame comprises a die paddle, a first plurality of leads, additional one or more leads, a second plurality of leads, a first tie bar, a second tie bar, a third tie bar, and a fourth tie bar. A respective end surface of each lead of the first plurality of leads, the additional one or more leads, and the second plurality of leads is plated with a metal. A respective end surface of the first tie bar, the second tie bar, the third tie bar, and the fourth tie bar is not plated with the metal. A method for fabricating a semiconductor package includes the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, applying a trimming process, applying a plating process, and applying a singulation process.

Abstract: A method includes storing an anchor row vector identification for an anchor row to a local memory. It is determined whether the anchor row vector identification is visible based on isolation requirements. The anchor row vector identification is accessed upon a determination that the anchor row vector identification is visible, and the row vector identification is re-read from the local memory. It is determined whether the anchor row vector identification has not changed since a start of the accessing. Upon a determination that the anchor row vector identification has not changed, read anchor row fields are returned. A first check history is performed on an anchor row history tuple sequence number (TSN) for the anchor row.

Abstract: A wafer level chip scale semiconductor package comprises a device semiconductor layer, a backside metallization layer, a film laminate layer, and a metal layer. The device semiconductor layer comprises a plurality of metal electrodes disposed on a front surface of the device semiconductor. Each side surface of the backside metallization layer is coplanar with a corresponding side surface of the device semiconductor layer. Each side surface of the metal layer is coplanar with a corresponding side surface of the film laminate layer. A surface area of a back surface of the backside metallization layer is smaller than a surface area of a front surface of the metal layer.

Abstract: A method comprises the steps of providing a wafer; applying a redistribution layer, grinding a back side of the wafer; depositing a metal layer; and applying a singulation process. A semiconductor package comprises a metal-oxide-semiconductor field-effect transistor (MOSFET), a redistribution layer, and a metal layer. The MOSFET comprises a source electrode, a gate electrode, a drain electrode and a plurality of partial drain plugs. The source electrode, the gate electrode, and the drain electrode are positioned at a front side of the MOSFET.

Abstract: A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles comprising a first die paddle. The first die paddle comprises one or more through holes, one or more protrusions with grooves on top surfaces of the one or more protrusions, or one or more squeezed extensions. Each of the one or more through holes is filled with a respective portion of the molding encapsulation. Each of the one or more through holes may be of a rectangular shape, a rectangular shape with four filleted corners, a circular shape, or an oval shape. Each of the grooves is filled with a respective portion of the molding encapsulation. A respective side wall of each of the one or more squeezed extensions is of a swallowtail shape. The swallowtail shape directly contacts the molding encapsulation.

Abstract: A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second low side FET, a first high side FET, and a second high side FET to the lead frame; mounting a first metal clip and a second metal clip; forming a molding encapsulation; and applying a singulation process.

Abstract: Methods and systems are described for managing a shared database. One or more processing nodes may access a shared database. A common log node may manage the shared database. The common log node may validate database operations requested by the one or more processing nodes. During validation, the common log node may detect conflicts that occur between database operations requested by the one or more processing nodes.

Abstract: This application provides a data processing method and apparatus. The method includes: receiving, by a master storage node, information that is about a first transaction and that is sent by a read-write node, where the information about the first transaction is used to request to perform a write operation on first data stored on the master storage node; determining, by the master storage node, the first data based on the information about the first transaction, and executing the first transaction; generating, by the master storage node, first transaction status metadata when the first transaction ends, where the first transaction status metadata includes identification information of expired data and identification information of the first transaction; and sending, by the master storage node, the first transaction status metadata to at least one read-only node. According to the data processing method and apparatus, a read delay of a read-only node can be eliminated.

Abstract: A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles, a first plurality of leads, and a second plurality of leads. A respective end surface of each lead of the first plurality of leads and the second plurality of leads is plated with a metal. A first respective window on a first side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A second respective window on a second side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A method for fabricating a semiconductor package comprises the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, and applying a cutting process or a punching process.

Abstract: A wafer level chip scale semiconductor package comprises a device semiconductor layer, a backside metallization layer, a film laminate layer, and a metal layer. The device semiconductor layer comprises a plurality of metal electrodes disposed on a front surface of the device semiconductor. Each side surface of the backside metallization layer is coplanar with a corresponding side surface of the device semiconductor layer. Each side surface of the metal layer is coplanar with a corresponding side surface of the film laminate layer. A surface area of a back surface of the backside metallization layer is smaller than a surface area of a front surface of the metal layer.

Abstract: A method comprises the steps of providing a wafer; applying a redistribution layer, grinding a back side of the wafer; depositing a metal layer; and applying a singulation process. A semiconductor package comprises a metal-oxide-semiconductor field-effect transistor (MOSFET), a redistribution layer, and a metal layer. The MOSFET comprises a source electrode, a gate electrode, a drain electrode and a plurality of partial drain plugs. The source electrode, the gate electrode, and the drain electrode are positioned at a front side of the MOSFET.

Abstract: A semi-wafer level packaging method comprises the steps of providing a wafer; grinding a back side of the wafer; forming a metallization layer; removing a peripheral ring; bonding a first tape; applying a dicing process; bonding a second tape; removing the first tape; bonding a supporting structure; bonding a third tape; removing the second tape; and applying a singulation process. A semi-wafer level packaging method comprises the steps of providing a wafer; attaching a carrier wafer to the wafer; grinding a back side of the wafer; forming a metallization layer; applying a dicing process; bonding a supporting structure; removing the carrier wafer; bonding a tape; and applying a singulation process.

Abstract: The disclosed systems and methods for intelligent heterogeneous computation directed to receiving monitoring data and a set of training data, wherein the monitoring data includes an occupancy rate of a preprocessed data queue and a utilization factor of accelerating devices, generating a resource computation job list in accordance with the monitoring data, forwarding jobs, in the resource computation job list to be executed on a central processing unit (CPU), to a CPU worker queue, forwarding control messages to the CPU worker queue, wherein the control messages are associated with jobs in the resource computation job list to be executed on the accelerating devices, and executing, by the accelerating devices, jobs in the resource computation job list to be executed on the accelerating devices.

Abstract: A semi-wafer level packaging method comprises the steps of providing a wafer; grinding a back side of the wafer; forming a metallization layer; removing a peripheral ring; bonding a first tape; applying a dicing process; bonding a second tape; removing the first tape; bonding a supporting structure; bonding a third tape; removing the second tape; and applying a singulation process. A semi-wafer level packaging method comprises the steps of providing a wafer; attaching a carrier wafer to the wafer; grinding a back side of the wafer; forming a metallization layer; applying a dicing process; bonding a supporting structure; removing the carrier wafer; bonding a tape; and applying a singulation process.

Abstract: A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles, a first plurality of leads, and a second plurality of leads. A respective end surface of each lead of the first plurality of leads and the second plurality of leads is plated with a metal. A first respective window on a first side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A second respective window on a second side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A method for fabricating a semiconductor package comprises the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, and applying a cutting process or a punching process.

Abstract: The disclosed systems and methods are directed to generating cache IDs for each of a plurality of AI training pipelines, accessing training data elements included in a training data set, generating IDs corresponding to the training data elements, receiving the data IDs and an associated cache ID, randomizing the data IDs, selecting a subset of the randomized data IDs, fetching the training data elements previously cached by a cache node, receiving a portion of the training data elements present in the caching server corresponding to the subset of randomized data IDs, forwarding the portion of the training data elements present in the caching server to at least one consumer node, fetching the remaining training data elements associated with the subset of randomized data IDs from the training data set, and forwarding the remaining training data elements to at least one transformation node for training the neural network.

Abstract: The disclosed computing node comprises a processor and a non-transitory storage medium storing instructions executable by the processor. A method and a system are also disclosed. A subset of a plurality of conventional redo records, corresponding to received write requests, is selected based on an identical data location identifier. The conventional redo records of such selected subset are combined into a consolidated redo record. The consolidated redo record is then transmitted to a target node for processing.

Abstract: A semiconductor package fabrication method comprises the steps of providing a wafer, applying a seed layer, forming a photo resist layer, plating a copper layer, removing the photo resist layer, removing the seed layer, applying a grinding process, forming metallization, and applying a singulation process. A semiconductor package comprises a silicon layer, an aluminum layer, a passivation layer, a polyimide layer, a copper layer, and metallization. In one example, an area of a contact area of a gate clip is smaller than an area of a gate copper surface. The area of the contact area of the gate clip is larger than a gate aluminum surface. In another example, an area of a contact area of a gate pin is larger than an area of a gate copper surface. The area of the contact area of the gate pin is larger than a gate aluminum surface.