Abstract: A controlling method for a wireless communication device is provided. The controlling method for the wireless communication device includes: attaching a first Universal Subscriber Identity Module (USIM) to a Long-Term Evolution (LTE) network; determining whether a second USIM is camped on the LTE network; detecting whether a paging collision is happened, if the second USIM is camped on the LTE network; generating a requested International Mobile Subscriber Identity (IMSI) offset for the second USIM, if the paging collision is happened, wherein the requested IMSI offset is 1 or min(T, nB)?1, T is a default paging period and nB is a number of paging occurrences within the default paging period; transmitting an attach request with the requested IMSI offset to the LTE network for the second USIM; receiving a negotiated IMSI offset from the LTE network; and attaching the second USIM to the LTE network with the negotiated IMSI offset.

Abstract: A multi-phase coupled inductor includes a first iron core, a second iron core, and a plurality of coil windings. The first iron core includes a first body and a plurality of first core posts. The plurality of first core posts are connected to the first body. The second iron core is opposite to the first iron core. The second iron core and the first body are spaced apart from each other by a gap. The plurality of coil windings wrap around the plurality of first core posts, respectively. Each of the coil windings has at least two coils.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: A p-aminobenzoic acid-producing microorganism is provided. The p-aminobenzoic acid-producing microorganism is obtained by a method for preparing a p-aminobenzoic acid-producing microorganism. The method for preparing a p-aminobenzoic acid-producing microorganism includes (a) performing an acclimation process on a source microorganism with at least one sulfonamide antibiotic to obtain at least one acclimatized microorganism and (b) screening out at least one p-aminobenzoic acid-producing microorganism from the at least one acclimatized microorganism, wherein the at least one p-aminobenzoic acid-producing microorganism has a higher p-aminobenzoic acid titer than the source microorganism.

Abstract: A non-contact switch and a non-contact switch control system are provided. The non-contact switch control system includes multiple non-contact switches, each including an infrared light module, a brightness sensing unit, a second switch module and a processing unit. The infrared light module includes a first switch module, transmitting unit and receiving unit. The first switch module has a first switch state. The transmitting unit connected to the first switch module emits infrared light according to the first switch state. The receiving unit receives a reflected light of the infrared light. The brightness sensing unit generates brightness information according to an ambient light. The second switch module has a second switch state. The processing unit is connected with the infrared light module, the brightness sensing unit and the second switch module, and controls the second switch state according to the reflected light and the brightness information.

Abstract: A method for gating in tomographic imaging system includes steps of: (a) performing a tomographic imaging on an object with a target moving periodically along a first axis for acquiring projection images; (b) obtaining projected curves by summing up pixel values along a direction of a second axis perpendicular to the first axis in each projection image; (c) determining a target zone on the projection images, wherein a central position on the first axis of the target zone is corresponding to a position having the largest variation in the projected curves on the first axis; (d) calculating parameter values of pixel values in the target zones and obtaining a curve of a moving cycle of the target according to the parameter values; and (e) selecting the projection images under the same state in the moving cycle for image reconstruction according to the curve of the moving cycle of the target.

Abstract: A detection circuit is provided herein, which includes a first transistor, a second transistor, a third transistor, a light sensor, a capacitor, and a fourth transistor. The first transistor has a control terminal, a first terminal, and a second terminal. The second transistor is coupled to the control terminal. The third transistor is coupled to the control terminal and the second terminal. The light sensor is coupled to the control terminal. The capacitor is coupled to the control terminal. The fourth transistor is coupled to the second terminal.

Abstract: The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.

Abstract: A light emitting module includes a carrier, a light emitting element, a reflection layer, and a fluorescent layer. The light emitting element is disposed on the carrier. The reflection layer is disposed on the carrier and surrounds the light emitting element. The fluorescent layer covers at least part of the light emitting element. The disadvantages of over broad light emitting angle and low illuminance may be solved. Comparing with the related art, the present disclosure achieves an object of increasing the illuminance by at least 10%.

Abstract: Disclosed is a display panel including: first spacer on the array substrate, an orthographic projection of the first spacer on the array substrate being a first pattern extending along a first direction; a second spacer on the counter substrate, an orthographic projection of the second spacer on the array substrate being a second pattern extending along a second direction; at least two third spacers, orthographic projections of which on the array substrate being respectively on two sides of the first pattern along the first direction; at least two fourth spacers, orthographic projections of which on the array substrate being respectively on two sides of the second pattern along the second direction; one of the third spacer and the fourth spacer is on the array substrate, and the other is on the counter substrate.

Abstract: A method of making an integrated circuit includes steps of selecting a first cell and a second cell for an integrated circuit layout from a cell library in an electronic design automation (EDA) system, the first and second cells each having a cell active area, a cell gate electrode, at least one fin of a first set of fins, and a cell border region, each cell also having the active area at an exposed side, and placing the first exposed side against the second exposed side at a cell border. The method also includes operations of aligning at least one fin of the first set of fins with at least one fin of the second set of fins across a cell border.

Abstract: A method of manufacturing a positive electrode material has the steps of synthesizing an iron metal in a phosphoric acid solution to form an iron phosphate dispersion solution; adding a vanadium pentoxide (V2O5), a non-ionic surfactant and a carbon source to the iron phosphate dispersion solution; and adding a lithium salt to the iron phosphate dispersion solution and then grinding and dispersing it to produce a positive electrode material. By regulating the timing of the addition of vanadium pentoxide (V2O5), the present invention enables the battery made of the positive electrode material to have the advantage of higher battery performance.

Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: An electrical device and an operation control method are provided. The electronic device includes a touch module and a processor. The touch module includes a touchable region. The touchable region is divided into at least a first touchable region and a second touchable region. The first touchable region is configured to implement a first function. The second touchable region is configured to implement the first function and a second function. The processor is electrically connected to the touch module. When at least one first touch point is detected in the first touchable region, at least one second touch point is detected in the second touchable region, and the processor determines that a distance between the first touch point and the second touch point is within a predetermined distance, the second touchable region is switched to implementing the first function.

Abstract: The present invention discloses a flat heat pipe, comprising a bottom plate, a top plate, and a support plate located between the bottom plate and the top plate; a micron-level radial strip is processed on the inner surface of the bottom plate; the inner surface of the top plate is processed with superhydrophilic and superhydrophobic radial structures arranged at intervals to transport the condensate to the direction of the surrounding pipe wall; a wick is arranged on the inner side of the support plate. The present invention has the function of pumpless directional transport of liquid and convergence of refluxed condensate; thereby improving the heat exchange performance of the entire flat heat pipe.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: Detecting sequential access violations for high-level synthesis (HLS) includes performing a simulation, using computer hardware, of an application for HLS. During the simulation, accesses of the application to elements of an array of the application are detected. During the simulation, determinations of whether the accesses occur in a sequential order are made. An indication of whether the access occur in sequential order is generated.

Abstract: A semiconductor component is provided in the form of an enhancement mode high-electron-mobility transistor having an n-i-p semiconductor junction epitaxial structure. The semiconductor component includes: a channel layer and a barrier layer formed on the channel layer. A two-dimensional electron gas (2DEG) is formed in the channel layer adjacent to an interface between the channel layer and the barrier layer. A gate electrode is disposed on the barrier layer. A semiconductor junction structure is disposed and sandwiched between the gate electrode and the barrier layer. The semiconductor junction structure includes a first region doped with a first dopant and in direct contact with the gate electrode, a second region doped with a second dopant different from the first dopant, and a third region being unintentionally doped and sandwiched between the first region and the second region. The semiconductor junction structure depletes a portion of the 2DEG thereunder.

Abstract: A vitrification device for gametes or embryos, wherein, the vitrification straw comprises: a loading rod, wherein the loading rod is a metal rod; a loading strip, wherein, the loading strip is connected with one end of the loading rod. According to the present invention, the loading rod is arranged as metal rod, which avoids embrittlement fracture caused by sudden temperature change when the loading rod is taken out of liquid nitrogen, moreover, the ice crystals that form on gametes or embryos when the loading rod floats out of the surface of liquid nitrogen, affecting the safety of gametes or embryos, the metal material used by this invention can increase the weight of the loading rod, preventing it from floating up in the liquid nitrogen, hence improve safety of gametes or embryos.