Abstract: Embodiments of the present disclosure provide a photosensitive composition for forming a color resist, a method for manufacturing a color filter substrate, and a color filter substrate. The photosensitive composition includes at least two color resist precursors, and at least two photoinitiators, each of the at least two photoinitiators being used to initiate polymerization of a corresponding one color resist precursor, of the at least two color resist precursors, to form the color resist.

Abstract: A nitride semiconductor epitaxial stack structure including: a Silicon substrate; an aluminum-including nucleation layer disposed on the silicon substrate; a buffer structure disposed on the aluminum-including nucleation layer and sequentially including: a first superlattice epitaxial structure, a first GaN based thick layer disposed on the first superlattice epitaxial structure, a second superlattice epitaxial structure disposed on the first GaN based thick layer, and a second GaN based thick layer disposed on the second superlattice epitaxial structure; a channel layer disposed on the buffer structure; a barrier layer disposed on the channel layer; and a two dimensional electron gas layer disposed near an interface between the channel layer and the barrier layer, wherein the total thickness of the first GaN based thick layer and the second GaN based thick layer is more than 2 micrometers.

Abstract: A semiconductor package includes a filler composition, wherein the filler composition includes particles each including both carbon and silica, wherein the filler composition is substantially devoid of alumina or silicon carbide, and the filler composition has a weight ratio of carbon to silica of at least greater than 1.0.

Abstract: A semiconductor power device includes an engineered aluminum-nitride substrate structure, and method of fabricating the same are described. The engineered substrate structure is effectively integrated with a transition layer of AlN/AlGaN disposed thereon, a buffer layer disposed on the transition layer having a C—(Al)GaN/u-GaN multiple stacking layered structure, a channel layer, a barrier layer, and an optional SiNx interlayer together, to form a GaN-based semiconductor power device. The GaN buffer layer is capable of achieving sufficient thickness for higher performance. The engineered substrate structure has a core region made of an aluminum nitride (AlN) substrate, a single crystal silicon layer as top material layer thereof, and bonded together with an encapsulated multi-layered structure containing adhesive layers, thin film layers and the AlN substrate.

Abstract: A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises Alx1Ga1-x1N, a material of the first functional layer comprises Alx2Ga1-x2N, 0<x1?1, 0?x2?1, and x1?x2. The interlayer includes a carbon doped or an iron doped material.

Abstract: A heterostructure device includes a channel layer, a barrier layer disposed on the channel layer, and a first electrode and a second electrode disposed on the barrier layer, respectively. The second electrode includes a p-type semiconductor structure and a raised section disposed on the p-type semiconductor structure, the second electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface of the p-type semiconductor structure and a first bottom surface of the raised section, the ohmic contact is formed between a second bottom surface of the raised section and the barrier layer.

Abstract: A semiconductor device, including: a channel layer formed on a substrate; a top barrier layer formed on the channel layer, wherein a first heterojunction is formed between the channel layer and the top barrier layer so that a first two-dimensional electron gas is generated in the channel layer; a buffer structure formed between the substrate and the channel layer; a back barrier layer formed between the buffer structure and the channel layer, wherein a second heterojunction is formed between the buffer structure and the back barrier layer so that a second two-dimensional electron gas is generated in the buffer structure; and a source electrode, a drain electrode, and a gate electrode formed on the top barrier layer, respectively; wherein a sheet carrier density of the second two-dimensional electron gas is less than 8E+10 cm?2.

Abstract: A blue color-resist for a liquid crystal display. The blue color-resist contains a blue pigment and a green pigment. A wavelength of a blue light after being transmitted through the blue color-resist is shifted toward infrared region.

Abstract: The present disclosure relates to a method for manufacturing a color filter substrate, a color substrate and a display panel in the field of display technology. The method includes: forming a color resistance layer on a basal substrate; forming a conversion layer on the basal substrate with the color resistance layer, wherein the thickness of the conversion layer is greater than the thickness of the color resistance layer and the conversion layer is convertible in color under the irradiation of preset light rays; and irradiating the conversion layer with the preset light rays so that the conversion layer is converted to a two-layer structure consisting of a black matrix (BM) pattern and a transparent over cover, wherein the BM pattern is disposed at the side of the conversion layer close to the basal substrate.

Abstract: A nitride semiconductor epitaxial stack structure including: a Silicon substrate; an aluminum-including nucleation layer disposed on the silicon substrate; a buffer structure disposed on the aluminum-including nucleation layer and sequentially including: a first superlattice epitaxial structure, a first GaN based thick layer disposed on the first superlattice epitaxial structure, a second superlattice epitaxial structure disposed on the first GaN based thick layer, and a second GaN based thick layer disposed on the second superlattice epitaxial structure; a channel layer disposed on the buffer structure; a barrier layer disposed on the channel layer; and a two dimensional electron gas layer disposed near an interface between the channel layer and the barrier layer, wherein the total thickness of the first GaN based thick layer and the second GaN based thick layer is more than 2 micrometers.

Abstract: An illuminant module includes a first illuminant unit, a second illuminant unit, a first phosphor layer, and a second phosphor layer. The first illuminant unit includes one or more first LED dice and a current regulator electrically connected to the LED dice in series. The second illuminant unit includes one or more second LED dice. The first phosphor layer at least covers the first LED dice, wherein first phosphor layer and the first LED dice collectively provide an emission having a first color temperature. The second phosphor layer at least covers the second LED dice, wherein second phosphor layer and the second LED dice collectively provide an emission having a second color temperature, the current regulator is configured to adjust currents flowing to the first illuminant unit and the second illuminant unit for changing luminous flux of emissions emitted from the first illuminant unit and the second illuminant unit.

Abstract: A three dimensional (3D) glass structure for decorating a workpiece includes a 3D glass layer, a light emitting layer, and a decorating layer. The 3D glass layer has a front surface and a back surface opposite to each other. The light emitting layer is disposed on the back surface of the 3D glass layer. The decorating layer is disposed between the 3D glass layer and the light emitting layer.

Abstract: A film for decorating a workpiece, a decorated molding article and a method for fabricating the decorated molding article are provided. The film includes a wood veneer layer, an extension layer, an adhesive layer, and a base layer. The wood veneer layer has a first surface and a second surface opposite to each other. The extension layer is disposed on the first surface of the wood veneer layer. The adhesive layer is disposed on the second surface of the wood veneer layer. The base layer is disposed between the wood veneer layer and the adhesive layer. The adhesive layer is disposed between the base layer and the workpiece.

Abstract: The present application discloses a semiconductor device comprising a crystalline substrate having a first region and a second region, a nuclei structure on the first region, a first crystalline buffer layer on the nuclei structure, a void between the second region and the first crystalline buffer layer, a second crystalline buffer layer on the first crystalline buffer layer, an intermediate layer located between the first crystalline buffer layer and the second crystalline buffer layer, and a semiconductor device layer on the second crystalline buffer layer.

Abstract: The present disclosure relates to a filler composition for a semiconductor package. The filler composition comprises carbon and silica.

Abstract: A heterostructure device includes a channel layer, a barrier layer disposed on the channel layer, and a first electrode and a second electrode disposed on the barrier layer, respectively. The second electrode includes a p-type semiconductor structure and a raised section disposed on the p-type semiconductor structure, the second electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface of the p-type semiconductor structure and a first bottom surface of the raised section, the ohmic contact is formed between a second bottom surface of the raised section and the barrier layer.

Abstract: Heterostructure field-effect transistor (HFET) having a channel layer, a barrier layer disposed on the channel layer, and a gate, source and drain electrodes disposed on the barrier layer, respectively, and corresponding fabrication methods are disclosed. The drain electrode includes a p-type semiconductor patterned structure and a raised drain section, the drain electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface together with a side surface of p-type semiconductor patterned structure and a bottom surface together with a side surface of raised drain section, the ohmic contact is formed between another surface of raised drain section and barrier layer, the raised drain section partially surrounding the p-type semiconductor patterned structure, and a bandgap of the channel layer is less than a bandgap of the barrier layer.

Abstract: An integrated interactively teaching platform system comprising a pre-class interactive data compiling device, a in-class interactive data compiling device, and an after-class interactive data assessing device, wherein the pre-class interactive data compiling device generates an interactive teaching plan and an evaluating test paper object which can be used in class by the in-class interactive data compiling device. The in-class interactive data compiling device performs a teaching service and an evaluation test with an evaluating test paper object, and tracks the evaluating test paper object to obtain an evaluation result. The after-class interactive data assessing device generates an assessing record according to the evaluation result to provide teachers with the current study status of students.

Abstract: An alignment mark is adapted to be positioned relative to a head of a patient, and includes an alignment unit and a marking unit. The alignment unit includes a pad member and an alignment member. The pad member is adapted to adhere to a scalp of the patient. The alignment member has a threaded section that extends through the pad member and that is adapted to be threadedly locked into a cranium of the patient, and a head section that is opposite to the threaded section and that abuts against the pad member. The marking unit is removably disposed on the alignment unit, and includes a marking member.

Abstract: A stereotactic stabilizer is adapted to be mounted to a fixing device and to be mounted with a stereotactic surgical instrument. The stereotactic stabilizer includes base seat and a rod member. The base seat has a main portion and an instrument connecting portion that is provided on the main portion and that is adapted to be mounted with the stereotactic surgical instrument. The rod member extends from the base seat and is adapted to be mounted to the fixing device so as to be positioned relative to a head of a patient.