Abstract: The present disclosure relates to a method for manufacturing a color filter substrate, a color substrate and a display panel in the field of display technology. The method includes: forming a color resistance layer on a basal substrate; forming a conversion layer on the basal substrate with the color resistance layer, wherein the thickness of the conversion layer is greater than the thickness of the color resistance layer and the conversion layer is convertible in color under the irradiation of preset light rays; and irradiating the conversion layer with the preset light rays so that the conversion layer is converted to a two-layer structure consisting of a black matrix (BM) pattern and a transparent over cover, wherein the BM pattern is disposed at the side of the conversion layer close to the basal substrate.

Abstract: A nitride semiconductor epitaxial stack structure including: a Silicon substrate; an aluminum-including nucleation layer disposed on the silicon substrate; a buffer structure disposed on the aluminum-including nucleation layer and sequentially including: a first superlattice epitaxial structure, a first GaN based thick layer disposed on the first superlattice epitaxial structure, a second superlattice epitaxial structure disposed on the first GaN based thick layer, and a second GaN based thick layer disposed on the second superlattice epitaxial structure; a channel layer disposed on the buffer structure; a barrier layer disposed on the channel layer; and a two dimensional electron gas layer disposed near an interface between the channel layer and the barrier layer, wherein the total thickness of the first GaN based thick layer and the second GaN based thick layer is more than 2 micrometers.

Abstract: An illuminant module includes a first illuminant unit, a second illuminant unit, a first phosphor layer, and a second phosphor layer. The first illuminant unit includes one or more first LED dice and a current regulator electrically connected to the LED dice in series. The second illuminant unit includes one or more second LED dice. The first phosphor layer at least covers the first LED dice, wherein first phosphor layer and the first LED dice collectively provide an emission having a first color temperature. The second phosphor layer at least covers the second LED dice, wherein second phosphor layer and the second LED dice collectively provide an emission having a second color temperature, the current regulator is configured to adjust currents flowing to the first illuminant unit and the second illuminant unit for changing luminous flux of emissions emitted from the first illuminant unit and the second illuminant unit.

Abstract: A three dimensional (3D) glass structure for decorating a workpiece includes a 3D glass layer, a light emitting layer, and a decorating layer. The 3D glass layer has a front surface and a back surface opposite to each other. The light emitting layer is disposed on the back surface of the 3D glass layer. The decorating layer is disposed between the 3D glass layer and the light emitting layer.

Abstract: A film for decorating a workpiece, a decorated molding article and a method for fabricating the decorated molding article are provided. The film includes a wood veneer layer, an extension layer, an adhesive layer, and a base layer. The wood veneer layer has a first surface and a second surface opposite to each other. The extension layer is disposed on the first surface of the wood veneer layer. The adhesive layer is disposed on the second surface of the wood veneer layer. The base layer is disposed between the wood veneer layer and the adhesive layer. The adhesive layer is disposed between the base layer and the workpiece.

Abstract: The present application discloses a semiconductor device comprising a crystalline substrate having a first region and a second region, a nuclei structure on the first region, a first crystalline buffer layer on the nuclei structure, a void between the second region and the first crystalline buffer layer, a second crystalline buffer layer on the first crystalline buffer layer, an intermediate layer located between the first crystalline buffer layer and the second crystalline buffer layer, and a semiconductor device layer on the second crystalline buffer layer.

Abstract: The present disclosure relates to a filler composition for a semiconductor package. The filler composition comprises carbon and silica.

Abstract: A heterostructure device includes a channel layer, a barrier layer disposed on the channel layer, and a first electrode and a second electrode disposed on the barrier layer, respectively. The second electrode includes a p-type semiconductor structure and a raised section disposed on the p-type semiconductor structure, the second electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface of the p-type semiconductor structure and a first bottom surface of the raised section, the ohmic contact is formed between a second bottom surface of the raised section and the barrier layer.

Abstract: Heterostructure field-effect transistor (HFET) having a channel layer, a barrier layer disposed on the channel layer, and a gate, source and drain electrodes disposed on the barrier layer, respectively, and corresponding fabrication methods are disclosed. The drain electrode includes a p-type semiconductor patterned structure and a raised drain section, the drain electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface together with a side surface of p-type semiconductor patterned structure and a bottom surface together with a side surface of raised drain section, the ohmic contact is formed between another surface of raised drain section and barrier layer, the raised drain section partially surrounding the p-type semiconductor patterned structure, and a bandgap of the channel layer is less than a bandgap of the barrier layer.

Abstract: An integrated interactively teaching platform system comprising a pre-class interactive data compiling device, a in-class interactive data compiling device, and an after-class interactive data assessing device, wherein the pre-class interactive data compiling device generates an interactive teaching plan and an evaluating test paper object which can be used in class by the in-class interactive data compiling device. The in-class interactive data compiling device performs a teaching service and an evaluation test with an evaluating test paper object, and tracks the evaluating test paper object to obtain an evaluation result. The after-class interactive data assessing device generates an assessing record according to the evaluation result to provide teachers with the current study status of students.

Abstract: A stereotactic stabilizer is adapted to be mounted to a fixing device and to be mounted with a stereotactic surgical instrument. The stereotactic stabilizer includes base seat and a rod member. The base seat has a main portion and an instrument connecting portion that is provided on the main portion and that is adapted to be mounted with the stereotactic surgical instrument. The rod member extends from the base seat and is adapted to be mounted to the fixing device so as to be positioned relative to a head of a patient.

Abstract: An alignment mark is adapted to be positioned relative to a head of a patient, and includes an alignment unit and a marking unit. The alignment unit includes a pad member and an alignment member. The pad member is adapted to adhere to a scalp of the patient. The alignment member has a threaded section that extends through the pad member and that is adapted to be threadedly locked into a cranium of the patient, and a head section that is opposite to the threaded section and that abuts against the pad member. The marking unit is removably disposed on the alignment unit, and includes a marking member.

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm?2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Abstract: The present application discloses a semiconductor device comprising a crystalline substrate having a first region and a second region, a nuclei structure on the first region, a first crystalline buffer layer on the nuclei structure, a void between the second region and the first crystalline buffer layer, a second crystalline buffer layer on the first crystalline buffer layer, an intermediate layer located between the first crystalline buffer layer and the second crystalline buffer layer, and a semiconductor device layer on the second crystalline buffer layer.

Abstract: This disclosure discloses a power device. The power device comprises a substrate; a first semiconductor layer having a first band gap and disposed on the substrate; a second semiconductor layer having a second band gap being lager than the first band gap and disposed on the first semiconductor layer; a third semiconductor layer having a third band gap smaller than the second band gap layer and disposed on the second semiconductor layer; a source electrode disposed on the third semiconductor layer; a base electrode electrically connecting the source electrode; and a p-type metal-oxide layer disposed between the base electrode and the third semiconductor layer.

Abstract: An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0<x<1, 0<y<2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.

Abstract: A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers formed in the third semiconductor layer and comprising a second element of III group. The first element of III group and the second element of III group are the same. The second semiconductor layer and the plurality of first interlayers are doped with carbon.

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013cm?2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Abstract: An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0<x<1, 0<y<2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.

Abstract: A rehabilitation-assisting apparatus is provided in this disclosure. The rehabilitation-assisting apparatus includes at least one step-information sensing unit, an alert-signal generating unit and a processing unit. The step-information sensing unit can be worn on a user's lower limb. The step-information sensing unit senses and generates step information of the user. The processing unit builds connections with the step-information sensing unit and the alert-signal generating unit. The processing unit determines if the user is walking appropriately according to the step information of the user. The processing unit drives the alert-signal generating unit to generate an alert signal when the user is not walking appropriately.