Abstract: A sensing device that includes (a) an image sensor matrix that comprises a first pixel and a second pixel; wherein the first pixel is configured to generate a first detection signal indicative of a presence of a first analyte; wherein the second pixel is configured to generate a second detection signal that is indifferent to the presence of the first analyte; and (b) a processing circuit that is configured to determine the presence of the first analyte based on at least a relationship between the first detection signal and the second detection signal.

Abstract: A semiconductor device includes a storage element write unit including a storage element configured to be electrically written only once and store two values, a write controller connected to the storage element through a first node signal and configured to perform a write to the storage element based on a write control signal instructing a write to the storage element, and a write state detection circuit configured to detect that the storage element is in a write state based on a measurement signal obtained by measuring the first node signal. In a case where the write controller receives a detection signal indicating that the storage element is in the write state from the write state detection circuit after start of a write to the storage element, the write controller stops write operation after a lapse of a predetermined time from detection of the write state of the storage element.

Abstract: A single-channel, single-poly floating gate (EEPROM-type) memristor including asymmetric source/drain-to-gate coupling and an asymmetric channel doping pattern. Asymmetric source/drain-to-gate coupling is achieved by configuring the drain, source and floating gate such that the gate-to-drain capacitance is greater than the gate-to-source capacitance. The asymmetric channel doping pattern is implemented by forming different drain-side and source-side doping portions (i.e., different N-type or P-type implant configurations and/or positions). The asymmetric channel doping pattern is preferably formed using standard CMOS implants (e.g., NLDD and P-type pocket implants). Multiple N-type and P-type implants may be selectively positioned to achieve a desired balance between program/erase speeds, reverse (read direction) threshold voltage and immunity to read-disturb and over-erase. A drain-side diode may be additionally used to suppress over-erase.

Abstract: A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.

Abstract: A UVC disinfection system that may include a UVC radiation illumination unit, a control unit, and a node. The node may include (i) a power supply, (ii) a UVC dose sensing unit that comprises a UVC sensing element, wherein the UVC dose sensing unit is configured to sense that the UVC radiation dose received by the node reached a predefined UVC radiation dose; and (iii) a node transmitter that is configured transmit a node unique signal following a sensing, by the UVC dose sensing unit, that the UVC radiation dose received by the node reached a predefined UVC radiation dose. The control unit is configured to control an emission of UVC radiation from the UVC radiation illumination unit based on a reception or a lack of reception of the node unique signal.

Abstract: A semiconductor device includes a storage element write unit including a storage element configured to be electrically written only once and store two values, a write controller connected to the storage element through a first node signal and configured to perform a write to the storage element based on a write control signal instructing a write to the storage element, and a write state detection circuit configured to detect that the storage element is in a write state based on a measurement signal obtained by measuring the first node signal. In a case where the write controller receives a detection signal indicating that the storage element is in the write state from the write state detection circuit after start of a write to the storage element, the write controller stops write operation after a lapse of a predetermined time from detection of the write state of the storage element.

Abstract: A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.

Abstract: A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.

Abstract: A biosensor that includes a semiconductor active region; a sensing region configured to contact a fluid; and multiple electrodes that comprise decoupling electrodes and additional electrodes. The decoupling electrodes may be configured, wherein operating in a first mode, to prevent a formation of a top conductive channel within the semiconductor active region; and wherein the additional electrodes are configured, wherein operating in the first mode, to independently control (i) one or more properties of one or more other conductive channels formed within the semiconductor active region, and (ii) a Debye length at an interface between the sensing region and the fluid.

Abstract: An ultraviolet sensor that may include a group of serially connected photovoltaic diodes of alternating polarities; a selective blocking portion that is configured to prevent ultraviolet radiation from reaching photovoltaic diodes that belong to the group and are of a first polarity, while allowing the ultraviolet radiation to reach photovoltaic diodes that belong to the group and are of a second polarity; and an interface for providing an output signal of the group, the output signal is indicative of ultraviolet radiation sensed by the photovoltaic diodes that belong to the group and are of the second polarity.

Abstract: An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.

Abstract: A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.

Abstract: For example, an Electrostatically Formed Nanowire (EFN) may include a source region; at least one drain region; a wire region configured to drive a current between the source and drain regions via a conductive channel; a first lateral-gate area extending along a first surface of the wire region between the source and drain regions; a second lateral-gate area extending along a second surface of the wire region between the source and drain regions; and a sensing area in opening in a backside of a silicon substrate under the wire region and the first and second lateral-gate areas, the sensing area configured to, in reaction to a predefined substance, cause a change in a conductivity of the conductive channel.

Abstract: A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.

Abstract: A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.

Abstract: A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.

Abstract: A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.

Abstract: An ultraviolet sensor that may include a group of serially connected photovoltaic diodes of alternating polarities; a selective blocking portion that is configured to prevent ultraviolet radiation from reaching photovoltaic diodes that belong to the group and are of a first polarity, while allowing the ultraviolet radiation to reach photovoltaic diodes that belong to the group and are of a second polarity; and an interface for providing an output signal of the group, the output signal is indicative of ultraviolet radiation sensed by the photovoltaic diodes that belong to the group and are of the second polarity.

Abstract: A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.

Abstract: A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.