Abstract: A resonator chip and a manufacturing method thereof are provided. The manufacturing method of the resonator chip includes the following steps. A quartz wafer is provided. The quartz wafer has a first surface and a second surface opposite to the first surface. A first etching process is performed on the quartz wafer to form multiple inverted mesa portions, and the inverted mesa portions has a first thickness. The quartz wafer is singulated to form multiple resonator chips. Each of the resonator chips includes one of the inverted mesa portions. A second etching process is performed on the resonator chips to form chamfers at edges of the resonator chips.

Abstract: Aspects herein provide for a knit component having a tubular rib knit structure that extends away from a base portion of the knit component. The tubular rib knit structure includes at least a first portion extending along a longitudinal side of the tubular rib knit structure, where the first portion exhibits a first visual effect at a first area of the knit component and exhibits a second visual effect at a second area of the knit component.

Abstract: A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Abstract: Aspects herein provide for a knit component having a tubular rib knit structure that extends away from a base portion of the knit component. The tubular rib knit structure includes at least a first portion extending along a longitudinal side of the tubular rib knit structure, where the first portion exhibits a first visual effect at a first area of the knit component and exhibits a second visual effect at a second area of the knit component.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

Abstract: A method includes: determining a first material and a second material of a photonic waveguide for propagating light, the photonic waveguide having a first section and a second section arranged in a first layer and a second layer, respectively, of the photonic waveguide; determining a spacing between the first layer and the second layer; determining a parameter set of a crosstalk reduction structure, according to the spacing, the first material and a wavelength of the light, to cause insertion losses of the first section and the second section to be lower than a predetermined threshold; and forming the first and second sections with the first and second materials, respectively, the first section having the crosstalk reduction structure overlapping the second section.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: A method includes: determining a first material and a second material of a photonic waveguide for propagating light, the photonic waveguide having a first section and a second section arranged in a first layer and a second layer, respectively, of the photonic waveguide; determining a spacing between the first layer and the second layer; determining a parameter set of a crosstalk reduction structure, according to the spacing, the first material and a wavelength of the light, to cause insertion losses of the first section and the second section to be lower than a predetermined threshold; and forming the first and second sections with the first and second materials, respectively, the first section having the crosstalk reduction structure overlapping the second section.

Abstract: A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Abstract: A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.

Abstract: A method includes: determining a first material and a second material of a photonic waveguide for propagating light, the photonic waveguide having a first section and a second section arranged in a first layer and a second layer, respectively, of the photonic waveguide; determining a spacing between the first layer and the second layer; determining a parameter set of a crosstalk reduction structure, according to the spacing, the first material and a wavelength of the light, to cause insertion losses of the first section and the second section to be lower than a predetermined threshold; and forming the first and second sections with the first and second materials, respectively, the first section having the crosstalk reduction structure overlapping the second section.

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

Abstract: Aspects herein provide for a knit component having a tubular rib knit structure that extends away from a base portion of the knit component. The tubular rib knit structure includes at least a first portion extending along a longitudinal side of the tubular rib knit structure, where the first portion exhibits a first visual effect at a first area of the knit component and exhibits a second visual effect at a second area of the knit component.

Abstract: A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Abstract: A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.