Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.

Abstract: A device is disclosed that includes a master controller, a process chamber, a local controller, a switch, and a data storage. The process chamber is configured to generate a data according to a EUV light generation process. The local controller is coupled to the master controller and configured to control the process chamber. The switch is coupled between the master controller and the local controller, wherein the switch is configured to provide paths for the local controller to communicate with the master controller. The data storage directly connected to the local controller and configured to store the data. The local controller communicates directly with the data storage.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: The invention discloses a high-k dielectric layer, a fabricating method thereof and a multi-function equipment implementing such fabricating method. The high-k dielectric layer of the invention includes M atomic-layer-deposited films formed in sequence on a material layer of a semiconductor device, where M is an integer larger than 1. The material layer can be a semiconductor layer, a metal layer or another dielectric layer. Each atomic-layer-deposited film is formed of an oxide and formed by an atomic layer deposition (ALD) process. N assigned films among the M atomic-layer-deposited films are bombarded by a non-reactive gas plasma during or after the cycles of the ALD process, where N is a natural number and less than or equal to M.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.

Abstract: An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.

Abstract: Aspects herein provide for a knit component having a tubular rib knit structure that extends away from a base portion of the knit component. The tubular rib knit structure includes at least a first portion extending along a longitudinal side of the tubular rib knit structure, where the first portion exhibits a first visual effect at a first area of the knit component and exhibits a second visual effect at a second area of the knit component.

Abstract: A system module applied to the machine controller for simulating a machine operation screen based on a non-invasive data-extraction system, is disclosed. An image capture device of the system module can receive an original operation screen outputted from the machine controller, and transmit the original operation screen to the non-invasive data-extraction system and a high-speed image process unit for extraction of the information shown on the operation screen. The software control system can extract the operational information of the machine controller in real time, to create a machine operation flow for generating a simulated machine operation screen which is then outputted to a screen of the machine controller. As a result, the site working staff can be provided with operational information associated with the machine in real time, for example, the operational information includes currently executed operation screen, position of mouse cursor and pop-up window detection result.

Abstract: A system module of customizing a screen image based on a non-invasive data-extraction system, and a method thereof are disclosed. The system module is applicable to a machine controller controlling a machine, and sensors are disposed around the machine. In the system module, an image capture device receives an image of an original screen from the machine controller, and transmits the image to the non-invasive data-extraction system for extracting information, and a software control system integrates data measured by the sensors with the information, and combined the integration result with a customized screen image, and an extra control component is embedded in an original operation screen of the machine controller. The customized screen image is shown on the machine controller to display information by more visual manner. Furthermore, the signal receiving device and an HID simulation device can be used to provide a basic function of a KVM switch.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. An inverse mask is provided. A sacrificial layer is deposited over a substrate. A patterned photoresist layer is formed over the sacrificial layer using the inverse mask. The sacrificial layer is then etched through the patterned photoresist layer to form a patterned sacrificial layer. A hard mask layer is deposited over the patterned sacrificial layer. The patterned sacrificial layer is then removed to form a second pattern on the hard mask layer.

Abstract: A device is disclosed that includes a master controller, a process chamber, a local controller, a switch, and a data storage. The process chamber is configured to generate a data according to a EUV light generation process. The local controller is coupled to the master controller and configured to control the process chamber. The switch is coupled between the master controller and the local controller, wherein the switch is configured to provide paths for the local controller to communicate with the master controller. The data storage directly connected to the local controller and configured to store the data. The local controller communicates directly with the data storage.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.

Abstract: Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (H2SO4) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (H2SO4) from the SPM effluent and to provide the recovered H2SO4 to the SPM cleaning unit via a feedback conduit.

Abstract: A lithography apparatus is provided. The lithography apparatus includes a reticle stage. The reticle stage includes a main base, an electrostatic chuck and a safety protecting device. The electrostatic chuck is disposed on the main base and configured to generate an electrostatic force for holding a reticle. The safety protecting device is connected to the main base and is configured to generate a pushing force toward the reticle when the electrostatic force generated by the electrostatic chuck is interrupted.

Abstract: An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: The invention discloses a high-k dielectric layer, a fabricating method thereof and a multi-function equipment implementing such fabricating method. The high-k dielectric layer of the invention includes M atomic-layer-deposited films formed in sequence on a material layer of a semiconductor device, where M is an integer larger than 1. The material layer can be a semiconductor layer, a metal layer or another dielectric layer. Each atomic-layer-deposited film is formed of an oxide and formed by an atomic layer deposition (ALD) process. N assigned films among the M atomic-layer-deposited films are bombarded by a non-reactive gas plasma during or after the cycles of the ALD process, where N is a natural number and less than or equal to M.