Abstract: A photodetector includes a substrate, an interdigital electrode layer and a photoactive layer. The interdigital electrode layer is located or sandwiched between the substrate and the photoactive layer. The interdigital electrode layer includes a first interdigital electrode and a second interdigital electrode. The first interdigital electrode and the second interdigital electrode are spaced from and staggered with each other.

Abstract: A method for forming an organic thin film transistor is provided. An interdigital electrode layer is located on a surface of the insulating substrate. An organic semiconductor layer is formed on a surface of the interdigital electrode layer. An insulating layer is located to cover the organic semiconductor layer. A gate electrode is formed on the insulating layer. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the interdigital electrode layer are spaced from each other. The carbon nanotube film structure is heated to gasify an organic semiconductor material to form the organic semiconductor layer on an interdigital electrode layer surface.

Abstract: A method for forming an organic light emitting diode array is provided. A substrate is provided. A plurality of first electrodes is formed on a substrate surface. A patterned mask layer is disposed on the substrate surface to cover the substrate and expose at least a portion of each first electrode. An evaporating source is provided. The evaporating source comprises a carbon nanotube film structure and an organic semiconductor material. The evaporating source is spaced from the plurality of first electrodes. The carbon nanotube film structure is heated to gasify the organic light emitting material and form a plurality of organic light emitting layers on a exposed surface of the plurality of first electrodes. A plurality of second electrodes are formed on a surface of the plurality of organic light emitting layers. The patterned mask layer is removed to form an organic light emitting diode array.

Abstract: A method for forming an organic thin film transistor is provided. An interdigital electrode layer is located on a surface of the insulating substrate. An organic semiconductor layer is formed on a surface of the interdigital electrode layer. An insulating layer is located to cover the organic semiconductor layer. A gate electrode is formed on the insulating layer. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the interdigital electrode layer are spaced from each other. The carbon nanotube film structure is heated to gasify an organic semiconductor material to form the organic semiconductor layer on an interdigital electrode layer surface.

Abstract: The present invention includes a method and device for updating a self-describing, structured document. A further aspect of the present invention is enabling client-based modification of the document. Additional aspects of the present invention are described in the claims, specification and drawings.

Abstract: The present disclosure relates to a nano-heterostructure. The nano-heterostructure includes a semiconductor layer, a first metallic carbon nanotube, a semiconducting carbon nanotube and a second metallic carbon nanotube. The semiconductor layer comprises a first surface and a second surface. The first metallic carbon nanotube is located on the first surface and extends in a first direction. The semiconducting carbon nanotube is located on the first surface and extends in the first direction. The semiconducting carbon nanotube is parallel and spaced away from the first metallic carbon nanotube. The second metallic carbon nanotube is located on the second surface and extends in a second direction. An angle forms between the first direction and the second direction.

Abstract: A method for characterizing carbon nanotubes comprising: providing a conductive substrate and applying an insulating layer on the conductive substrate; forming a carbon nanotube structure on a surface of the insulating layer, the carbon nanotube structure includes at least one carbon nanotube; placing the carbon nanotube structure under a scanning electron microscope, adjusting the scanning electron microscope with an accelerating voltage ranging from 5˜20 KV, a dwelling time ranging 6˜20 microseconds and a magnification ranging from 10000˜100000 times; taking photos of the carbon nanotube structure with the scanning electron microscope; and, obtaining a photo of the carbon nanotube structure, the photo shows the at least one carbon nanotube and a background.

Abstract: A method for making a thermoacoustic device array includes the following step. A substrate having a surface is provided. The surface defines a grid having a number of cells. A number of holes are defined on each of the cells. A first electrode and a second electrode are formed on each of the cells. The first electrode is spaced from the second electrode, and one row of the holes is located between the first electrode and the second electrode. A sound wave generator is applied on the substrate and electrically connected to the first electrode and the second electrode. The sound wave generator is suspended over the holes. The sound wave generator is divided according to the cells.

Abstract: A method for making semiconducting layer includes: providing a carbon nanotube film; providing a conductive substrate and applying an insulating layer on the conductive substrate; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope with an accelerating voltage ranging 5˜20 KV, and taking photos of the carbon nanotube film with the scanning electron microscope; obtaining a photo of the carbon nanotube film, wherein the photo shows the plurality of carbon nanotubes and a background, a plurality of first carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes have deeper color than the color of the background; and removing the plurality of first carbon nanotubes.

Abstract: A method for distinguishing carbon nanotubes comprising: providing a conductive substrate and applying an insulating layer on the conductive substrate; forming a carbon nanotube structure on a surface of the insulating layer, the carbon nanotube structure includes at least one carbon nanotube; placing the carbon nanotube structure under a scanning electron microscope, adjusting the scanning electron microscope with an accelerating voltage ranging from 5˜20 KV, a dwelling time ranging 6˜20 microseconds and a magnification ranging from 10000˜100000 times; taking photos of the carbon nanotube structure with the scanning electron microscope; and, obtaining a photo of the carbon nanotube structure, the photo shows the at least one carbon nanotube and a background.

Abstract: The disclosure relates to a method of making nanotube film. The method includes following steps. A free-standing carbon nanotube film is provided. The carbon nanotube film includes a number of carbon nanotubes aligned and connected with each other via van der Waals force. The carbon nanotube film is suspended and defects are induced on the surface of the carbon nanotubes. A nano-material layer is grown on the surface of the carbon nanotubes via atomic layer deposition. The carbon nanotube film is removed by annealing to form a number of nanotubes; wherein the number of nanotubes are successively aligned and connected with each other to form a free-standing nanotube film.

Abstract: A method for making thin film transistor includes: providing a gate electrode and forming an insulating layer on the gate electrode; providing a carbon nanotube film comprising a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope to take photo of the carbon nanotube film to distinguish the plurality of metallic carbon nanotubes and the plurality of semiconducting carbon nanotubes; removing the metallic carbon nanotubes, and forming a source electrode and a drain electrode on a surface of the semiconducting layer.

Abstract: A method for making semiconducting layer includes: providing a carbon nanotube film; providing a conductive substrate and applying an insulating layer on the conductive substrate; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope with an accelerating voltage ranging 5˜20 KV, and taking photos of the carbon nanotube film with the scanning electron microscope; obtaining a photo of the carbon nanotube film, wherein the photo shows the plurality of carbon nanotubes and a background, a plurality of first carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes have deeper color than the color of the background; and removing the plurality of first carbon nanotubes.

Abstract: A method for making a transparent conductive layer comprising: providing a carbon nanotube film comprising a plurality of carbon nanotubes; providing a conductive substrate and applying an insulating layer on the conductive substrate; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope, and taking photos of the carbon nanotube film with the scanning electron microscope; obtaining a photo of the carbon nanotube film, wherein the photo shows the plurality of carbon nanotubes and a background, a plurality of first carbon nanotubes of the plurality of carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes of the plurality of carbon nanotubes have deeper color than the color of the background; and removing the plurality of second carbon nanotubes.

Abstract: A method for characterizing carbon nanotubes comprising: providing a conductive substrate and applying an insulating layer on the conductive substrate; forming a carbon nanotube structure on a surface of the insulating layer, the carbon nanotube structure includes at least one carbon nanotube; placing the carbon nanotube structure under a scanning electron microscope, adjusting the scanning electron microscope with an accelerating voltage ranging from 5˜20 KV, a dwelling time ranging 6˜20 microseconds and a magnification ranging from 10000˜100000 times; taking photos of the carbon nanotube structure with the scanning electron microscope; and, obtaining a photo of the carbon nanotube structure, the photo shows the at least one carbon nanotube and a background.

Abstract: A method for distinguishing carbon nanotubes comprising: providing a conductive substrate and applying an insulating layer on the conductive substrate; forming a carbon nanotube structure on a surface of the insulating layer, the carbon nanotube structure includes at least one carbon nanotube; placing the carbon nanotube structure under a scanning electron microscope, adjusting the scanning electron microscope with an accelerating voltage ranging from 5˜20 KV, a dwelling time ranging 6˜20 microseconds and a magnification ranging from 10000˜100000 times; taking photos of the carbon nanotube structure with the scanning electron microscope; and, obtaining a photo of the carbon nanotube structure, the photo shows the at least one carbon nanotube and a background.

Abstract: A method for making thin film transistor includes: providing a gate electrode and forming an insulating layer on the gate electrode; providing a carbon nanotube film comprising a plurality of metallic carbon nanotubes and a plurality of semiconducting carbon nanotubes; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope to take photo of the carbon nanotube film to distinguish the plurality of metallic carbon nanotubes and the plurality of semiconducting carbon nanotubes; removing the metallic carbon nanotubes, and forming a source electrode and a drain electrode on a surface of the semiconducting layer.

Abstract: An epitaxial base is provided. The epitaxial base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface and defines a plurality of grooves and bulges on the epitaxial growth surface. The carbon nanotube layer covers the epitaxial growth surface, wherein a first part of the carbon nanotube layer is attached to top surfaces of the plurality of bulges, a second part of the carbon nanotube layer is attached to bottom surfaces of the plurality of grooves, the second part of the carbon nanotube layer is separated from the first part of the carbon nanotube layer, and side surfaces of the plurality of grooves are free of carbon nanotubes.

Abstract: The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.

Abstract: The disclosure relates to a biomimetic insect. The biomimetic insect includes a trunk and at least two wings connected to the trunk. The wing includes a carbon nanotube layer and a vanadium dioxide layer (VO2) layer stacked with each other. Because the drastic, reversible phase transition of vanadium dioxide, the wing has giant deformation amplitude and fast response.