Abstract: The disclosure relates to a method for making an actuator based on carbon nanotubes. The method includes: providing a carbon nanotube layer; depositing a vanadium oxide (VOx) layer on the carbon nanotube layer; and annealing the VOx layer in an oxygen atmosphere to form a vanadium dioxide layer (VO2) layer. Because the drastic reversible phase transition of VO2, the actuator has giant deformation amplitude and fast response.

Abstract: The disclosure relates to a biomimetic limb and robot using the same. The biomimetic limb includes: an arm and a biomimetic hand connected to the arm and including at least one biomimetic finger. The biomimetic finger includes a carbon nanotube layer and a vanadium dioxide layer (VO2) layer stacked with each other. Because the drastic, reversible phase transition of VO2, the biomimetic finger has giant deformation amplitude and fast response. An robot using the biomimetic limb is also provided.

Abstract: The disclosure relates to an actuator based on carbon nanotubes and actuating system using the same. The actuator includes: a carbon nanotube layer and a vanadium dioxide layer stacked with each other. Because the drastic, reversible phase transition of VO2, the actuator has giant deformation amplitude and fast response. An actuating system using the actuator is also provided.

Abstract: The disclosure relates to a temperature sensitive system. The system includes a powder, a detector, a first electrode, a second electrode and an actuator. The powder, the detector, the first electrode, the second electrode and the actuator are connected to form a loop circuit. The actuator can deform in response to temperature change so that the circuit to be on or off. The detector is connected to the actuator in parallel or in series and configured to show the current change of the loop circuit to the user. The actuator includes a carbon nanotube layer and a vanadium dioxide layer (VO2) layer stacked with each other. Because the drastic, reversible phase transition of VO2, the actuator has giant deformation amplitude and fast response and the temperature sensitive system has high sensitivity.

Abstract: A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a number of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween.

Abstract: A method for transferring a carbon nanotube array is disclosed. The carbon nanotube array has an ability to have a carbon nanotube structure drawn therefrom. The carbon nanotube array is transferred from a growing substrate to a substitute substrate, meanwhile the carbon nanotube array is still having the ability to have a carbon nanotube structure drawn from the substitute substrate. The substitute substrate is placed on the top surface of the carbon nanotube array. An adhesive layer is sandwiched between the substitute substrate and the carbon nanotube array. The substitute substrate is separated from the growing substrate, thereby separating the bottom surface of the carbon nanotube array from the growing substrate. A method for making a carbon nanotube structure is also disclosed.

Abstract: The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.

Abstract: The present disclosure relates to a nano-heterostructure. The nano-heterostructure includes a semiconductor layer, a first metallic carbon nanotube, a semiconducting carbon nanotube and a second metallic carbon nanotube. The semiconductor layer comprises a first surface and a second surface. The first metallic carbon nanotube is located on the first surface and extends in a first direction. The semiconducting carbon nanotube is located on the first surface and extends in the first direction. The semiconducting carbon nanotube is parallel and spaced away from the first metallic carbon nanotube. The second metallic carbon nanotube is located on the second surface and extends in a second direction. An angle forms between the first direction and the second direction.

Abstract: The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.

Abstract: The present disclosure relates to a light detector. The light detector includes a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure. The nano-heterostructure is electrically coupled with the first electrode and the second electrode. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

Abstract: The present disclosure relates to a method for making nanoscale heterostructure. The method includes: forming a first carbon nanotube layer on a support, the first carbon nanotube layer includes a number of first carbon nanotubes; forming a semiconductor layer on a surface of the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, the second carbon nanotube layer includes a number of second carbon nanotubes; finding and labeling a first metal carbon nanotube and a semiconductor carbon nanotube parallel to and spaced away from the first metal carbon nanotube; finding and labeling a second metal carbon nanotube, an extending direction of the second metal carbon nanotube is crossed with an extending direction of the first metal carbon nanotube and the semiconductor carbon nanotube; removing the other carbon nanotubes; and annealing the above structure.

Abstract: The present disclosure relates to a nano-scale transistor. The nano-scale transistor includes a source electrode, a drain electrode, a gate electrode and a nano-heterostructure. The nano-heterostructure is electrically coupled with the source electrode and the drain electrode. The gate electrode is insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

Abstract: The present disclosure relates to a method for making nanoscale heterostructure. The method includes: forming a first carbon nanotube layer on a support, the first carbon nanotube layer includes a number of first carbon nanotubes; forming a semiconductor layer on a surface of the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, the second carbon nanotube layer includes a number of second carbon nanotubes; finding and labeling a first metal carbon nanotube and a semiconductor carbon nanotube parallel to and spaced away from the first metal carbon nanotube; finding and labeling a second metal carbon nanotube, an extending direction of the second metal carbon nanotube is crossed with an extending direction of the first metal carbon nanotube and the semiconductor carbon nanotube; removing the other carbon nanotubes; and annealing the above structure.

Abstract: A method of growing carbon nanotubes includes following steps. A reactor is constructed, wherein the reactor includes a reactor chamber and a rotating mechanism inside the reactor chamber. A carbon nanotube catalyst composite layer is applied, the carbon nanotube catalyst composite layer is configured to be rotated by the rotating mechanism in the reactor chamber, and the carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. The carbon nanotube catalyst composited layer is positioned inside the reactor chamber. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber. The carbon nanotube catalyst composite layer is rotated. The carbon nanotube catalyst composite layer is heated to grow carbon nanotubes.

Abstract: A thermoacoustic device includes a substrate, a first electrode and a second electrode, at least two supporting members, and a first carbon nanotube film. The substrate includes a surface. The first electrode and the second electrode are located on the surface of the substrate and spaced from each other. The at least two supporting members are spaced from each other and respectively located on surfaces of the first electrode and the second electrode. The at least two supporting members include a plurality of carbon nanotubes parallel with each other and substantially perpendicular to the surface of the substrate. The first carbon nanotube film is supported by the at least two supporting members and has a portion between the at least two supporting members suspended above the substrate. The supporting members electrically connect the first carbon nanotube film with the first electrode and the second electrode.

Abstract: A method for forming an organic light emitting diode is provided. A substrate and an evaporating source are provided. A first electrode is formed on a surface of the substrate. The evaporating source is spaced from the first electrode. The carbon nanotube film structure is heated to gasify an organic light emitting material and form an organic light emitting layer on a surface of the first electrode. A second electrode is formed on a surface of the organic light emitting layer.

Abstract: A method for forming an organic thin film transistor is provided. An organic semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer are formed on an insulating substrate. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the insulating substrate are spaced from each other. The carbon nanotube film structure is heated to gasify the organic semiconductor material to form the organic semiconductor layer on a depositing surface.

Abstract: The present invention includes a method and device for updating a self-describing, structured document. A further aspect of the present invention is enabling client-based modification of the document. Additional aspects of the present invention are described in the claims, specification and drawings.

Abstract: A method for forming an organic thin film solar battery includes steps of: providing a substrate and an evaporating source; forming a first electrode on a surface of the substrate; spacing the evaporating source from the first electrode, and heating the carbon nanotube film structure to gasify the photoactive material and form a photoactive layer on a surface of the first electrode; and forming a second electrode on a surface of the photoactive layer.

Abstract: A cable includes a conductive core, an insulating layer, a shielding layer, and a sheath. The sheath coats the shielding layer. The shielding layer coats the insulating layer. The insulating layer coats the conductive wire. The conductive core includes a conductive wire and a carbon nanotube film comprising a plurality of carbon nanotubes. The carbon nanotubes coat the conductive core.