Abstract: A welding process involves a fixture for holding a workpiece and a welder, or welding electrode. The fixture imposes ultrasonic vibration on the workpiece. The welder vibrates during vibration, and is operable at a first voltage for welding and a second voltage for peening. The peening may occur while the weldmetal is crystallizing. The welding process may be a process of welding two part as together, or of filling a groove or other feature, or of applying or restoring a surface, or of applying a hard facing or ceramic to a parent metal or object. The weldmetal may be the same, or substantially the same, as the parent metal, or it may be different. The different material may be a ceramic material.

Abstract: A method includes forming a bottom electrode layer, and depositing a first ferroelectric layer over the bottom electrode layer. The first ferroelectric layer is amorphous. A second ferroelectric layer is deposited over the first ferroelectric layer, and the second ferroelectric layer has a polycrystalline structure. The method further includes depositing a third ferroelectric layer over the second ferroelectric layer, with the third ferroelectric layer being amorphous, depositing a top electrode layer over the third ferroelectric layer, and patterning the top electrode layer, the third ferroelectric layer, the second ferroelectric layer, the first ferroelectric layer, and the bottom electrode layer to form a Ferroelectric Random Access Memory cell.

Abstract: An optical system and an operating method thereof are disclosed. The optical system includes a light source device, a gaze module and a fundus detection device. The light source device includes a light source module, a light intensity modulation module and a lens module. The light source module is used to emit a therapy light to an eye. The light intensity modulation module is used to modulate an intensity of the therapy light. The lens module is used to control a depth of the therapy light. The gaze module is used to be gazed by the eye to fix a fundus of the eye. The fundus detection device and the light source device are integrated to detect the fundus to obtain a fundus image.

Abstract: A portable ring-type fluorescence optical system for observing microfluidic channel and an operating method thereof are disclosed. The portable ring-type fluorescence optical system includes a photographic chip, a first polarizer, an objective lens, a ring-type fluorescent light source, a biological sample on a microfluidic chip, a second polarizer and a bottom illumination light source arranged in order from top to bottom. The ring-type fluorescent light source is used to generate a ring-type fluorescent light to the biological sample on the microfluidic chip. The objective lens is used to magnify a fluorescent image of the biological sample on the microfluidic chip to focus on the photographic chip. The first polarizer disposed under the photographic chip and the second polarizer disposed under the biological sample form a non-zero angle to each other to block reflected lights that the biological sample reflects the lights emitted by the bottom illumination light source.

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Abstract: A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

Abstract: A carbon nanotube composite structure includes a carbon nanotube and a film-like structure. The carbon nanotube includes a p-type portion and an n-type portion. The film-like structure is a molybdenum disulfide film or a tungsten disulfide film, and the film-like structure covers the n-type portion.

Abstract: A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film. The source electrode is electrically connected to the film-like structure. The drain electrode is electrically connected to the carbon nanotube.

Abstract: A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Abstract: A drug screening platform simulating hyperthermic intraperitoneal chemotherapy including a dielectrophoresis system, a microfluidic chip and a heating system is disclosed. The dielectrophoresis system is used to provide a dielectrophoresis force. The microfluidic chip includes a cell culture array and observation module and a drug mixing module. The cell culture array and observation module are used to arrange the cells into a three-dimensional structure through the dielectrophoresis force to construct a three-dimensional tumor microenvironment. The drug mixing module is coupled to the cell culture array and observation module and used to automatically split and mix the inputted drugs and output the drug combinations into the cell culture array and observation module.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a first bottom electrode layer over a substrate. A ferroelectric switching layer is disposed over the first bottom electrode layer. A first top electrode layer is disposed over the ferroelectric switching layer. A second bottom electrode layer is disposed between the first bottom electrode layer and the ferroelectric switching layer. The second bottom electrode layer is less susceptible to oxidation than the first bottom electrode layer.

Abstract: A laser remote control switching system comprises a laser source and a control circuit. The control circuit comprises a power, an electronic device, a first electrode, a second electrode, and a photosensitive element electrically connected in sequence to form a loop. Each of the two nanofiber actuators comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Abstract: A method includes forming a bottom electrode layer, and depositing a first ferroelectric layer over the bottom electrode layer. The first ferroelectric layer is amorphous. A second ferroelectric layer is deposited over the first ferroelectric layer, and the second ferroelectric layer has a polycrystalline structure. The method further includes depositing a third ferroelectric layer over the second ferroelectric layer, with the third ferroelectric layer being amorphous, depositing a top electrode layer over the third ferroelectric layer, and patterning the top electrode layer, the third ferroelectric layer, the second ferroelectric layer, the first ferroelectric layer, and the bottom electrode layer to form a Ferroelectric Random Access Memory cell.

Abstract: Modified glucagon-like peptide (GLP1) fusion proteins with modified GLP1 polypeptides and related methods of use are described. Aspects of the disclosure further relate to fusion proteins that are GLP1 receptor agonists with a modified GLP1 fused to a stabilizing domain such as an extra cellular domain or antibody. Fusion proteins with modified GLP1 that are useful for treating or ameliorating a symptom or indication of a blood sugar disorder such as obesity and diabetes are also provided.

Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method includes forming a lower electrode layer over a substrate, and an un-patterned amorphous initiation layer over the lower electrode layer. An intermediate ferroelectric material layer is formed have a substantially uniform amorphous phase on the un-patterned amorphous initiation layer. An anneal process is performed to change the intermediate ferroelectric material layer to a ferroelectric material layer having a substantially uniform orthorhombic crystalline phase. An upper electrode layer is formed over the ferroelectric material layer. One or more patterning processes are performed on the upper electrode layer, the ferroelectric material layer, the un-patterned amorphous initiation layer, and the lower electrode layer to form a ferroelectric memory device. An upper ILD layer is formed over the ferroelectric memory device, and an upper interconnect is formed to contact the ferroelectric memory device.

Abstract: A portable ring-type fluorescence optical system for observing microfluidic channel and an operating method thereof are disclosed. The portable ring-type fluorescence optical system includes a photographic chip, a first polarizer, an objective lens, a ring-type fluorescent light source, a biological sample on a microfluidic chip, a second polarizer and a bottom illumination light source arranged in order from top to bottom. The ring-type fluorescent light source is used to generate a ring-type fluorescent light to the biological sample on the microfluidic chip. The objective lens is used to magnify a fluorescent image of the biological sample on the microfluidic chip to focus on the photographic chip. The first polarizer disposed under the photographic chip and the second polarizer disposed under the biological sample form a non-zero angle to each other to block reflected lights that the biological sample reflects the lights emitted by the bottom illumination light source.

Abstract: The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

Abstract: A supercapacitor is provided. The supercapacitor includes an elastic fiber, an internal electrode, a first electrolyte layer, and an external electrode. The internal electrode, the first electrolyte layer, and the external electrode are sequentially wrapped on an outer surface of the elastic fiber. The internal electrode includes a first carbon nanotube film and a NiO@MnOx composite structure, and the external electrode includes a second carbon nanotube film and a Fe2O3 layer.

Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method includes forming a bottom electrode layer over a substrate and forming a seed layer over the bottom electrode layer. A ferroelectric switching layer is formed over the bottom electrode layer and to contact the seed layer. The ferroelectric switching layer is formed to have a first region with a first crystal phase and a second region with a different crystal phase. A top electrode layer is formed over the ferroelectric switching layer. One or more patterning processes are performed on the bottom electrode layer, the seed layer, the ferroelectric switching layer, and the top electrode layer to form a ferroelectric random access memory (FeRAM) device.