Abstract: A photocurrent scanning system comprises a laser generating device, a focusing device, a displacement adjustment device, a bias supply device, and a measuring device. The laser generating device is used to emit a laser. The focusing device is used to focus the laser to a surface of a sample. The displacement adjustment device is used to place the sample and adjust a position of the sample, to make the laser focused onto different parts of the surface of the sample. The bias supply device is used to supply a voltage to the sample. The measuring device is used to measure a photocurrent signal flowing through the sample.

Abstract: A method for making blackbody radiation source is provided. A blackbody radiation cavity and a carbon nanotube array located on a substrate are provided. A black lacquer layer is coated on an inner surface of the blackbody radiation cavity. A pressure is applied to the carbon nanotube array to form a carbon nanotube paper. The carbon nanotube paper is placed on the black lacquer layer. The substrate is peeled off to make the carbon nanotube paper bond to the black lacquer layer. An adhesive tape is placed on the carbon nanotube paper. And then the adhesive tape peeling off to separate carbon nanotubes in the carbon nanotube paper from the adhesive tape and bond to the black lacquer layer, the carbon nanotubes vertically aligned and forms the carbon nanotube array.

Abstract: A laser remote control switching system comprises a laser source and a control circuit. The control circuit comprises a power, an electronic device, a first electrode, a second electrode, and a photosensitive element electrically connected in sequence to form a loop. Each of the two nanofiber actuators comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Abstract: A nanofiber actuator comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. A ferroelectric switching layer is arranged between the bottom electrode and the top electrode. The ferroelectric switching layer is configured to change polarization based upon one or more voltages applied to the bottom electrode or the top electrode. A seed layer is arranged between the bottom electrode and the top electrode. The seed layer and the ferroelectric switching layer have a non-monoclinic crystal phase.

Abstract: A nano manipulator comprises a base and a clamping structure. The clamping structure comprises two nanofiber actuators located on the base and spaced from each other. Each of the two nanofiber actuators comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Abstract: A bionic arm comprises a bionic palm and at least one finger. The at least one finger comprises a nanofiber actuator. A nanofiber actuator comprises a composite structure and a vanadium dioxide layer. The composite structure comprises a carbon nanotube wire and an aluminum oxide layer. The aluminum oxide layer is coated on a surface of the carbon nanotube wire, and the aluminum oxide layer and the carbon nanotube wire are located coaxially with each other. The vanadium dioxide layer is coated on a surface of the composite structure, and the vanadium dioxide layer and the composite structure are located non-coaxially with each other.

Abstract: A cavity black body radiation source is provided. The cavity black body radiation source comprises a blackbody radiation cavity, a black lacquer, and a carbon nanotube layer. The blackbody radiation cavity comprises an inner surface. The black lacquer is located on the inner surface. The carbon nanotube layer is located on a surface of the black lacquer away from the blackbody radiation cavity. The carbon nanotube layer comprises a plurality of carbon nanotubes and a plurality of microporous. A method of making the cavity blackbody radiation source is also provided.

Abstract: The present invention provides modified glucagon-like peptide 1 (GLP1) polypeptides, fusion proteins comprising modified GLP1 polypeptides, and methods of use thereof. In various embodiments of the invention, the fusion proteins are GLP1 receptor agonists that comprise a modified GLP1 fused to a stabilizing domain. In some embodiments, the fusion proteins comprising modified GLP1 are useful for treating or ameliorating a symptom or indication of a disorder such as obesity and diabetes.

Abstract: A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A buffer layer is formed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are separated to form a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

Abstract: The present invention relates to a surface source blackbody. The plane source blackbody comprises a panel, and a plurality of carbon nanotubes. The panel comprises a first surface and a second surface opposite to the first surface. A carbon nanotube array is located on the first surface of the panel. The carbon nanotube array comprises a plurality of carbon nanotubes. The plurality of carbon nanotubes are substantially perpendicular to the first surface of the panel. The carbon nanotube array has a high emissivity, so the plane source blackbody using the carbon nanotube array as a surface material has a high effective emissivity.

Abstract: The present invention relates to a semiconductor structure. The semiconductor structure comprises a semiconductor layer, at least one metallic carbon nanotube, and at least one graphene layer. The semiconductor layer defines a first surface and a second surface opposite to the first surface. The at least one metallic carbon nanotube is located on the first surface of the semiconductor layer. The at least one graphene layer is located on the second surface of the semiconductor layer. The at least one metallic carbon nanotube, the semiconductor layer and the at least one graphene layer are stacked with each other to form at least one three-layered stereoscopic structure. The present invention also relates a semiconductor device, and a photodetector.

Abstract: Method and system arranged for configuring Intelligent Electronic Device, IED, process bus network switches from a substation specification according to IEC 61850 standard, said method comprising: calculating, from a substation topology file and from control function and substation bay library files, a Substation Specification Description file and substation traffic demand flow files comprising a GOOSE message profile subscription file and a Sampled Values message profile subscription file; generating destination MAC addresses; simulating the process bus communication network using said substation traffic demand flow files and process bus communication network topology, said topology comprising said process bus network switches, respective links and IED links; calculating the shortest path between each publisher IED and each subscriber IED; calculating a switch multicast filtering rule file, for each switch output port, comprising a multicast filter rule that allows the calculated shortest paths; translating

Abstract: The present invention relates to a plane source blackbody. The plane source blackbody comprises a panel, a black lacquer layer, and a carbon nanotube array. The panel comprises a first surface and a second surface opposite to the first surface. The black lacquer layer and the carbon nanotube array are located on the first surface. The carbon nanotube array comprises a plurality of carbon nanotubes. Each of the carbon nanotubes comprises a top end and a bottom end. The bottom end of each of the carbon nanotubes is immersed into the black lacquer layer and the top end of each of the carbon nanotubes is exposed out from the black lacquer layer. The plurality of carbon nanotubes are substantially perpendicular to the first surface of the pane.

Abstract: The present invention provides modified glucagon-like peptide 1 (GLP1) polypeptides, fusion proteins comprising modified GLP1 polypeptides, and methods of use thereof. In various embodiments of the invention, the fusion proteins are GLP1 receptor agonists that comprise a modified GLP1 fused to a stabilizing domain. In some embodiments, the fusion proteins comprising modified GLP1 are useful for treating or ameliorating a symptom or indication of a disorder such as obesity and diabetes.

Abstract: A supercapacitor is provided. The supercapacitor includes an elastic fiber, an internal electrode, a first electrolyte layer, and an external electrode. The internal electrode, the first electrolyte layer, and the external electrode are sequentially wrapped on an outer surface of the elastic fiber. The internal electrode includes a first carbon nanotube film and a NiO@MnOx composite structure, and the external electrode includes a second carbon nanotube film and a Fe2O3 layer.

Abstract: The present disclosure relates to a light emitting diode. The light emitting diode comprises a first semiconductor layer, a second semiconductor layer, an active layer, a first electrode, and a second electrode. The active layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is a first carbon nanotube, the second electrode is a second carbon nanotube. A first extending direction of the first carbon nanotube and a second extending direction of the second carbon nanotube are crossed with each other. A vertical p-n junction or a vertical p-i-n junction is formed by the first semiconductor layer and the second semiconductor layer in a direction perpendicular to the first semiconductor layer.

Abstract: The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

Abstract: The present disclosure relates to a photoelectric detector. The photoelectric detector comprises a semiconductor device, a first electrode, a second electrode, and a current detection element. The semiconductor device comprises a semiconductor layer, a first carbon nanotube, and a second carbon nanotube. The semiconductor layer comprises a N-type semiconductor layer and a P-type semiconductor layer, and the semiconductor layer defines a first surface and a second surface. The first carbon nanotube is on the first surface and electrically connected the first electrode. The second carbon nanotube is on the second surface and electrically connected the second electrode. The first carbon nanotube and the second carbon nanotube intersects with each other. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor layer, and the second carbon nanotube.

Abstract: The present disclosure relates to a semiconductor structure. The semiconductor structure comprises a semiconductor layer, a first carbon nanotube, and a second carbon nanotube. The semiconductor layer comprises an N-type semiconductor layer and a P-type semiconductor layer stacked with each other. The first carbon nanotube is on a first surface of the semiconductor layer. The second carbon nanotube is on a second surface of the semiconductor layer. A first extending direction of the first carbon nanotube intersects with a second extending direction of the second carbon nanotube. At an intersection of the first carbon nanotube and the second carbon nanotube, and in a direction perpendicular to the semiconductor layer, a multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor layer, and the second carbon nanotube.