Patents by Inventor Yanli Zhang

Yanli Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734070
    Abstract: Non-volatile memory strings may include multiple selection devices for coupling memory cell devices to a bit line. Different programming operations may be used to program various individual selection devices in a non-volatile memory cells string. For example, a control circuit may set a threshold voltage of a particular selection device to a value greater than a threshold voltage of another selection device. In another example, the control circuit may program the selection device using an initial sense time. Subsequent to programming the selection device using the initial sense time, the control circuit may program the selection device using a different sense time that is shorter than the initial sense time.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: August 4, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Xiang Yang, Dengtao Zhao, Huai-Yuan Tseng, Deepanshu Dutta, Zhongguang Xu, Yanli Zhang, Jin Liu
  • Publication number: 20200243498
    Abstract: A memory device includes a memory die containing memory elements, a support die containing peripheral devices and bonded to the memory die, and an electrically conductive path between two of the peripheral devices which extends at least partially through the memory die. The electrically conductive path is electrically isolated from the memory elements.
    Type: Application
    Filed: January 30, 2019
    Publication date: July 30, 2020
    Inventors: Yanli ZHANG, Kwang-Ho KIM, Johann ALSMEIER
  • Patent number: 10727215
    Abstract: A memory device includes a memory die containing memory elements, a support die containing peripheral devices and bonded to the memory die, and an electrically conductive path between two of the peripheral devices which extends at least partially through the memory die. The electrically conductive path is electrically isolated from the memory elements.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: July 28, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Yanli Zhang, Kwang-Ho Kim, Johann Alsmeier
  • Publication number: 20200232323
    Abstract: Disclosed is a multi-section non-pillar staggered protected roadway for a deep inclined thick coal seam (DITCS) and a method for coal pillar filling between sections. The multi-section non-pillar staggered protected roadway includes a floor, a coal seam, an immediate roof, and a basic roof in a multi-section coal seam, where the floor is disposed below the coal seam, a hydraulic support is disposed in a section between the floor and the immediate roof; a return airway and a transportation roadway are respectively disposed on a left side and a right side of each section; the return airway and the transportation roadway in each section are communicated with each other through a working face; and non-pillar staggered layout is used for a return airway of a next section and a transportation roadway of a current section.
    Type: Application
    Filed: January 13, 2020
    Publication date: July 23, 2020
    Inventors: Panshi XIE, Yingyi ZHANG, Yanli ZHANG, Shuangqi TIAN, Jianjie DUAN
  • Publication number: 20200235116
    Abstract: A combination of an alternating stack and a memory opening fill structure is provided over a substrate. The alternating stack includes insulating layers and electrically conductive layers. The memory opening fill structure vertically extends through the alternating stack, and includes a memory film, a vertical semiconductor channel, and a core structure comprising a core material. A phase change material is employed for the core material. A volume expansion is induced in in the core material by performing an anneal process that induces a microstructural change within the core material. The volume expansion in the core material induces a lateral compressive strain and a vertical tensile strain within the vertical semiconductor channel. The vertical tensile strain enhances charge mobility in the vertical semiconductor channel, and increases the on-current of the vertical semiconductor channel.
    Type: Application
    Filed: January 18, 2019
    Publication date: July 23, 2020
    Inventors: Chun GE, Yanli ZHANG, Fei ZHOU, Raghuveer S. MAKALA
  • Publication number: 20200227089
    Abstract: A method and an apparatus are provided for processing multimedia information by an electronic device including at least two cameras. The method includes obtaining, via a first camera of the at least two cameras, first video information corresponding to a first focus region; obtaining, via a second camera of the at least two cameras, second video information corresponding to a second focus region within the first focus region, the second focus region being smaller than the first focus region; and displaying, in a split screen layout, the first video information and the second video information on a display of the electronic device.
    Type: Application
    Filed: March 27, 2020
    Publication date: July 16, 2020
    Inventors: Yu XIAO, Yanli LI, Juan LEI, Wenbo ZHANG, Bo GAO, Junjun XIONG
  • Patent number: 10712536
    Abstract: The present disclosure discloses a camera optical lens. The camera optical lens including, in an order from an object side to an image side, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens. The first lens is made of plastic material, the second lens is made of glass material, the third lens is made of glass material, the fourth lens is made of plastic material, the fifth lens is made of plastic material, and the sixth lens is made of plastic material. The camera optical lens further satisfies specific conditions.
    Type: Grant
    Filed: June 17, 2018
    Date of Patent: July 14, 2020
    Assignee: AAC OPTICS SOLUTIONS PTE. LTD.
    Inventors: Kenji Oinuma, Lei Zhang, Yanmei Wang, Yanli Xie
  • Patent number: 10712535
    Abstract: The present disclosure discloses a camera optical lens. The camera optical lens including, in an order from an object side to an image side, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens. The first lens is made of glass material, the second lens is made of glass material, the third lens is made of plastic material, the fourth lens is made of plastic material, the fifth lens is made of plastic material, and the sixth lens is made of plastic material. The camera optical lens further satisfies specific conditions.
    Type: Grant
    Filed: June 17, 2018
    Date of Patent: July 14, 2020
    Assignee: AAC OPTICS SOLUTIONS PTE. LTD.
    Inventors: Kenji Oinuma, Lei Zhang, Yanmei Wang, Yanli Xie
  • Publication number: 20200209564
    Abstract: The present disclosure relates to the field of optical lenses and provides a camera optical lens. The camera optical lens includes, from an object side to an image side: a first lens made of a glass material; a second lens made of a plastic material; a third lens made of a plastic material; a fourth lens made of a glass material; a fifth lens made of a plastic material; a sixth lens made of a plastic material; and a seventh lens made of a plastic material. The camera optical lens satisfies following conditions: 1.51f1/f2.50; 1.70n12.20; ?10.00(R13+R14)/(R13?R14)10.00; and 1.70n42.20. The camera optical lens can achieve a high imaging performance while obtaining a low TTL.
    Type: Application
    Filed: November 6, 2019
    Publication date: July 2, 2020
    Inventors: Yutong Guo, Lei Zhang, Yanmei Wang, Yanli Xie
  • Publication number: 20200209565
    Abstract: The present disclosure relates to the field of optical lenses and provides a camera optical lens. The camera optical lens includes, from an object side to an image side: a first lens made of a glass material; a second lens made of a plastic material; a third lens made of a plastic material; a fourth lens made of a plastic material; a fifth lens made of a glass material; a sixth lens made of a plastic material; and a seventh lens made of a plastic material. The camera optical lens satisfies following conditions: 1.51?f1/f?2.50; 1.69?n1?2.20; 0.60?f3/f4?2.00; ?10.00?(R13+R–)/(R13?R14)?10.00; and 1.70?n5?2.20. The camera optical lens can achieve a high imaging performance while obtaining a low TTL.
    Type: Application
    Filed: November 6, 2019
    Publication date: July 2, 2020
    Inventors: Zhanli Guo, Lei Zhang, Yanmei Wang, Yanli Xie
  • Publication number: 20200209562
    Abstract: The present disclosure relates to the field of optical lenses and provides a camera optical lens. The camera optical lens includes, from an object side to an image side: a first lens made of a plastic material; a second lens made of a plastic material; a third lens made of a plastic material; a fourth lens made of a glass material; a fifth lens made of a glass material; a sixth lens made of a plastic material; and a seventh lens made of a plastic material. The camera optical lens satisfies following conditions: 1.51?f1/f?2.50; 1.70?n4?2.20; 2.00?f3/f4?5.00; ?10.00?(R13+R14)/(R13?R14)?10.00; and 1.70?n5?2.20. The camera optical lens can achieve a high imaging performance while obtaining a low TTL.
    Type: Application
    Filed: November 6, 2019
    Publication date: July 2, 2020
    Inventors: Qing Zhao, Lei Zhang, Yanmei Wang, Yanli Xie
  • Publication number: 20200209563
    Abstract: The present disclosure relates to the field of optical lenses and provides a camera optical lens. The camera optical lens includes, from an object side to an image side: a first lens made of a glass material; a second lens made of a plastic material; a third lens made of a glass material; a fourth lens made of a plastic material; a fifth lens made of a plastic material; a sixth lens made of a plastic material; and a seventh lens made of a plastic material. The camera optical lens satisfies following conditions: 1.51?f1/f?2.50; 1.70?n1?2.20; 0.50?f3/f4?2.00; ?10.00?(R13+R14)/(R13?R14)?10.00; and 1.70?n3?2.20. The camera optical lens can achieve a high imaging performance while obtaining a low TTL.
    Type: Application
    Filed: November 6, 2019
    Publication date: July 2, 2020
    Inventors: Xiaofeng Xiong, Lei Zhang, Yanmei Wang, Yanli Xie
  • Publication number: 20200209561
    Abstract: The present disclosure relates to the field of optical lenses and provides a camera optical lens. The camera optical lens includes, from an object side to an image side: a first lens made of a plastic material; a second lens made of a plastic material; a third lens made of a glass material; a fourth lens made of a glass material; a fifth lens made of a plastic material; a sixth lens made of a plastic material; and a seventh lens made of a plastic material. The camera optical lens satisfies following conditions: 1.50?f1/f?2.50; 1.70?n3?2.20; ?2.00?f3/f4?2.00; 1.00?(R13+R14)/(R13?R14)?10.00; and 1.70?n4?2.20. The camera optical lens can achieve a high imaging performance while obtaining a low TTL.
    Type: Application
    Filed: November 6, 2019
    Publication date: July 2, 2020
    Inventors: Yonghua Ji, Lei Zhang, Yanmei Wang, Yanli Xie
  • Patent number: 10700078
    Abstract: A three-dimensional memory device includes alternating stacks of electrically conductive strips and spacer strips located over a substrate and laterally spaced apart among one another by memory stack assemblies. The spacer strips may include air gap strips or insulating strips. Each of the memory stack assemblies includes two two-dimensional arrays of lateral protrusion regions. Each of the lateral protrusion regions comprises a respective curved charge storage element. The charge storage elements may be discrete elements located within a respective lateral protrusion region, or may be a portion of a charge storage material layer that extends vertically over multiple electrically conductive strips. Each of the memory stack assemblies may include two rows of vertical semiconductor channels that laterally overlie a respective vertical stack of charge storage elements.
    Type: Grant
    Filed: February 18, 2019
    Date of Patent: June 30, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Zhixin Cui, Masatoshi Nishikawa, Yanli Zhang
  • Patent number: 10700090
    Abstract: A three-dimensional memory device includes alternating stacks of electrically conductive strips and spacer strips located over a substrate and laterally spaced apart among one another by memory stack assemblies. The spacer strips may include air gap strips or insulating strips. Each of the memory stack assemblies includes two two-dimensional arrays of lateral protrusion regions. Each of the lateral protrusion regions comprises a respective curved charge storage element. The charge storage elements may be discrete elements located within a respective lateral protrusion region, or may be a portion of a charge storage material layer that extends vertically over multiple electrically conductive strips. Each of the memory stack assemblies may include two rows of vertical semiconductor channels that laterally overlie a respective vertical stack of charge storage elements.
    Type: Grant
    Filed: February 18, 2019
    Date of Patent: June 30, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Zhixin Cui, Masatoshi Nishikawa, Yanli Zhang
  • Patent number: 10685978
    Abstract: Electrical isolation between adjacent stripes of drain-select-level electrically conductive layers can be provided by forming a drain-select-level isolation structure between neighboring rows of memory stack structures. The drain-select-level isolation structure can partially cut through upper regions of the neighboring rows of memory stack structures. Vertical semiconductor channels of the neighboring rows of memory stack structures include a lower tubular segment and an upper semi-tubular segment that contact the drain-select-level isolation structure. Electrical current through drain select levels is limited to the semi-tubular segment of each vertical semiconductor channel. Alternatively, the drain-select-level isolation structure can be formed around the memory stack structures within the neighboring rows of memory stack structures.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: June 16, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Ching-Huang Lu, Wei Zhao, Yanli Zhang, James Kai
  • Patent number: 10685979
    Abstract: Electrical isolation between adjacent stripes of drain-select-level electrically conductive layers can be provided by forming a drain-select-level isolation structure between neighboring rows of memory stack structures. The drain-select-level isolation structure can partially cut through upper regions of the neighboring rows of memory stack structures. Vertical semiconductor channels of the neighboring rows of memory stack structures include a lower tubular segment and an upper semi-tubular segment that contact the drain-select-level isolation structure. Electrical current through drain select levels is limited to the semi-tubular segment of each vertical semiconductor channel. Alternatively, the drain-select-level isolation structure can be formed around the memory stack structures within the neighboring rows of memory stack structures.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: June 16, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Ching-Huang Lu, Wei Zhao, Yanli Zhang, James Kai
  • Publication number: 20200181727
    Abstract: A non-oriented electrical steel having excellent magnetic properties, the chemical elements thereof in percentage by mass being: Si: 0.2-1.5%, Mn: 0.01-0.30%, Al: 0.001-0.009%, O: 0.005-0.02%, C?0.005%, S?0.005%, N?0.005%, and Ti?0.002%, the remainder being Fe and other unavoidable impurities, and Al/Si?0.006 and Mn/Si?0.2. The method for producing comprises the following sequence of steps: (1) smelting; (2) hot rolling: the slab heating temperature being 850° C. to 1250° C., and the final rolling temperature being 800-1050° C.; (3) acid pickling; (4) cold rolling; (5) annealing: the annealing plate temperature being controlled between 620° C.-900° C.; and (6) coating.
    Type: Application
    Filed: October 26, 2017
    Publication date: June 11, 2020
    Applicant: BAOSHAN IRON & STEEL CO., LTD.
    Inventors: Xuejun LV, Feng ZHANG, Zhenyu ZONG, Yanli SONG, Lingyun CHEN, Bo WANG, Shishu XIE
  • Patent number: 10622369
    Abstract: A three-dimensional memory device includes semiconductor devices located on a semiconductor substrate, lower interconnect level dielectric layers embedding lower interconnect structures, an alternating stack of insulating layers and electrically conductive layers overlying the lower interconnect level dielectric layers and including stepped surfaces, memory stack structures vertically extending through the alternating stack, and contact via structures extending downward from the stepped surfaces through underlying portions of the alternating stack to the lower interconnect structures. Each of the contact via structures laterally contacts an electrically conductive layer located at the stepped surfaces, and provides electrical interconnection to an underlying semiconductor device. A top portion of each contact via structures contacts an electrically conductive layer, and is electrically isolated from other underlying electrically conductive layers.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: April 14, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Fei Zhou, Raghuveer S. Makala, Hiroyuki Kinoshita, Yanli Zhang, James Kai, Johann Alsmeier, Stephen Ross, Senaka Kanakamedala
  • Patent number: 10600800
    Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and word-line-level electrically conductive layers located over a substrate, and a drain-select-level electrically conductive layer located over the alternating stack. Memory stack structures extend through the alternating stack and the drain-select-level electrically conductive layer. Dielectric divider structures including a respective pair of straight sidewalls and drain-select-level isolation structures including a respective pair of sidewalls that include a respective set of concave vertical sidewall segments divide the drain-select-level electrically conductive layer into multiple strips. The drain-select-level electrically conductive layer and the drain-select-level isolation structures are formed by replacement of a drain-select-level sacrificial material layer with a conductive material and by replacement of drain-select-level sacrificial line structures with dielectric material portions.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: March 24, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Masatoshi Nishikawa, Shinsuke Yada, Yanli Zhang