Abstract: The present invention is directed to novel compounds that inhibit Nav1.8 sodium channels, methods of making, and methods of using thereof. The present disclosure is further directed to administering the disclosed compounds as therapeutic solutions for chronic pain, primary pain, idiopathic pain, gastrointestinal pain, neuropathic pain, musculoskeletal pain, acute pain, inflammatory pain, cancer-related pain, idiopathic pain, postoperative pain, visceral pain, multiple sclerosis, Summer-Marr-Tuff syndrome, incontinence, pathological cough, or arrhythmia to a subject in need thereof.

Abstract: The present application discloses a semiconductor device including a substrate, a first buried gate structure, and a second buried gate structure. The substrate has an array region and a periphery region. The first buried gate structure is extended from a first surface of the substrate along a first direction into the substrate and disposed in the array region. The second buried gate structure is extended from the first surface of the substrate along the first direction into the substrate and disposed in the periphery region. A depth of the first buried gate structure is less than a depth of the second buried gate structure along the first direction.

Abstract: The present application discloses a semiconductor device including a substrate, a first buried gate structure, and a second buried gate structure. The substrate has an array region and a periphery region. The first buried gate structure is extended from a first surface of the substrate along a first direction into the substrate and disposed in the array region. The second buried gate structure is extended from the first surface of the substrate along the first direction into the substrate and disposed in the periphery region. A depth of the first buried gate structure is less than a depth of the second buried gate structure along the first direction.

Abstract: A structure includes a controlled polyimide profile. A method for forming such a structure includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a polyimide opening. The method further includes performing a second anneal at a second temperature and removing a portion of the photoresist to form the polyimide opening. The method further includes performing a third anneal at a third temperature and cleaning the polyimide opening by ashing.

Abstract: A driving circuit, a display panel and a display device are provided. The driving circuit includes a first output circuit and a first pull-up node control circuit; the first output circuit is electrically connected to a pull-up node, a first high voltage input terminal and a driving signal output terminal, and is configured to control to connect the first high voltage input terminal and the driving signal output terminal under the control of a potential of the pull-up node; the first pull-up node control circuit is electrically connected to a pull-down node, a second high voltage input terminal and the pull-up node, and is configured control to connect the pull-up node and the second high voltage input terminal under the control of a potential of the pull-down node; the first high voltage input terminal is different from the second high voltage input terminal.

Abstract: The present application discloses a semiconductor device including a substrate, a first buried gate structure, and a second buried gate structure. The substrate has an array region and a periphery region. The first buried gate structure is extended from a first surface of the substrate along a first direction into the substrate and disposed in the array region. The second buried gate structure is extended from the first surface of the substrate along the first direction into the substrate and disposed in the periphery region. A depth of the first buried gate structure is less than a depth of the second buried gate structure along the first direction.

Abstract: Provided is a display substrate including a base substrate, a plurality of pixel units, at least one first power line, a blocking structure, an auxiliary connection structure, a cathode layer and a first organic pattern. A first projection region formed from an orthographic projection of the auxiliary connection structure on the base substrate and an orthographic projection of the blocking structure on the base substrate do not overlap.

Abstract: Provided is a method of optimizing pass voltage including: determining a sweet point of an initial pass voltage; monitoring a pulse number of ISPP; obtaining a shift of a low boundary value of the pass voltage by a shift of the pulse number of the ISPP at different cycles; monitoring a pulse number of ISPE; obtaining a shift of a high boundary value of the pass voltage by a shift of the pulse number of the ISPE at the different cycles; adding the shift of the high boundary value and the shift of the low boundary value and dividing by 2 to get a shift of the sweet point of the pass voltage; and adding the sweet point of the initial pass voltage and the shift of the sweet point of the pass voltage to obtain an optimized pass voltage value.

Abstract: An array substrate is provided. The array substrate includes a plurality of first gate lines, a plurality of second gate lines, and a plurality of pixel driving circuits. The array substrate includes a first semiconductor material layer and a second semiconductor material layer on a side of the first semiconductor material layer away from a base substrate. The first semiconductor material layer includes at least active layers of the driving transistor and the data write transistor. The second semiconductor material layer includes at least an active layer of the compensating transistor. A first parasitic capacitor is formed between the second semiconductor material layer and the respective first gate line. A second parasitic capacitor is formed between the first node connecting line and the respective second gate line. A ratio of a capacitance of the first parasitic capacitor to a capacitance of the second parasitic capacitor is greater than 2.3.

Abstract: A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes alternately performing dense set operations and dense reset operations on the target memory cell, wherein the dense set operation includes applying a dense switching gate voltage and a dense set bit line voltage; and performing a normal set operation on the target memory cell, wherein the normal set operation includes applying a normal set gate voltage and a normal set bit line voltage to the target memory cell, the normal set gate voltage is greater than the pre-forming gate voltage and the dense switching gate voltage, and the normal set bit line voltage is less than the pre-forming bit line voltage and the dense set bit line voltage.

Abstract: A display substrate and a display panel are provided. The display substrate includes a base substrate; a display region, on the base substrate and including a plurality of sub-pixels arranged in an array; each of the plurality of sub-pixels includes a light-emitting element and a pixel circuit that drives the light-emitting element to emit light, and the pixel circuit includes a driving sub-circuit, a data writing sub-circuit, a threshold compensation sub-circuit, and a reset sub-circuit; the reset sub-circuit includes a first reset transistor and a second reset transistor, the threshold compensation sub-circuit includes a threshold compensation transistor and a storage capacitor, an orthographic projection of the second reset transistor on the base substrate is between an orthographic projection of the first reset transistor on the base substrate and an orthographic projection of the threshold compensation transistor on the base substrate.

Abstract: A method for producing a porous structure electrode with gas permeability and liquid impermeability, includes the following steps: Step 1: mixing a catalytic material having hydrophilicity, a carbon nanotube material, a material with a hydrophilic group, and a carbon black material to form a first slurry, wherein the carbon nanotube material has a specific surface area equal to or greater than the carbon black material; Step 2: mixing the first slurry with an emulsified material to form a second slurry; Step 3: obtaining a film material through a film forming process; Step 4: heating the film material to a first temperature to remove solvent in the film material; Step 5: Repeating steps 3 to 4; and Step 6: heating the film material to a second temperature to remove liquid in the film material, thereby leaving pores in the film material, and allowing the film material to solidify.

Abstract: A communication apparatus includes: MAC control circuitry, which, in operation, controls transmission and reception of a control frame and a data frame that are used for communication with another communication apparatus; and radio circuitry, which, in operation, performs radio communication of the control frame and the data frame using a transmission antenna and a reception antenna, wherein, when the radio circuitry receives, from the another communication apparatus, an SSW frame including an OCB response subfield among a plurality of the control frames, the MAC control circuitry determines whether to perform data communication between the communication apparatus and the another communication apparatus in accordance with the OCB response subfield.

Abstract: A display apparatus includes a plurality of rows of subpixels, a first scan circuit, and a second scan circuit. The first scan circuit includes a plurality of first scan units and a plurality of second scan units alternately arranged. The second scan circuit includes a plurality of third scan units. A respective first scan unit and a respective second scan unit are configured to provide control signals to two adjacent rows of subpixels, respectively. A respective third scan unit is configured to provide control signals to the first adjacent row of subpixels and the second adjacent row of subpixels. Control signals output from the respective first scan unit are out of phase with respect to control signals output from the respective second scan unit. A first duration of an effective voltage of a first control signal output from the respective first scan unit is greater than a second duration of an effective voltage of a second control signal output from the respective second scan unit.

Abstract: The present application provides a semiconductor structure having a porous structure between a conductive pad and a metal layer. The semiconductor structure includes: a substrate including an interconnection structure; a dielectric layer disposed over the substrate; a conductive pad disposed over the dielectric layer; a passivation layer, disposed over the dielectric layer and partially exposing the conductive pad; and a porous layer, surrounded by the dielectric layer and extending between the substrate and the conductive pad.

Abstract: A display panel and a display device are disclosed, the display panel includes a plurality of display regions, a peripheral region surrounding the plurality of display regions, a plurality of light-emission control scan driving circuits provided in the peripheral region, a first start signal line, and a second start signal line. The first start signal line is different from the second start signal line, the plurality of display regions include a first display region and a second display region, the plurality of light-emission control scan driving circuits include a first light-emission control scan driving circuit and a second light-emission control scan driving circuit, the first start signal line is configured to provide a first start signal to the first light-emission control scan driving circuit, and the second start signal line is configured to provide a second start signal to the second light-emission control scan driving circuit.

Abstract: The present application discloses a contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an impurity region positioned in the substrate; an intervening conductive layer positioned on the impurity region; a bottom conductive layer positioned on the bottom conductive layer; a conductive capping layer positioned on the bottom conductive layer; a top conductive layer positioned on the conductive capping layer. The intervening conductive layer, the bottom conductive layer, the conductive capping layer, and the top conductive layer configure a contact structure. The bottom conductive layer includes germanium or silicon germanium. The bottom conductive layer includes n-type dopants or p-type dopants.

Abstract: A liquid delivery system and a gas-liquid mixing device are provided. The gas-liquid mixing device includes a ROS (reactive oxygen species) generation module, a RNS (reactive nitrogen species) generation module, a venturi, and a control module. The ROS generation module and the RNS generation module can react with air through electrical breakdown effect to respectively generate a plurality of ROS gas particles and a plurality of RNS gas particles. The venturi can generate a negative pressure to draw in the ROS gas particles and the RNS gas particles, so as to be mixed into a liquid. The control module can control one of the ROS generation module and the RNS generation module to perform electrical breakdown effect to obtain a surge duration, and another one of the ROS generation module and the RNS generation module to perform electrical breakdown effect after the surge duration.

Abstract: A scan circuit is provided. The scan circuit includes a plurality of scan units. A respective scan unit of the plurality of scan units includes a plurality of transistors. A respective gate electrode of a respective transistor of the plurality of transistors includes a first portion and a second portion in different layers. First portions of respective gate electrodes of the plurality of transistors in the respective scan unit are configured to be provided with a power supply signal. Second portions of the respective gate electrodes of the plurality of transistors in the respective scan unit are configured to be provided with gate scanning signals, respectively. First portions of gate electrodes of at least two transistors in the respective scan unit are parts of a unitary structure.

Abstract: A display substrate includes at least two barrier layers in a peripheral area of the display substrate. The at least two barrier layers includes a first barrier layer forming an enclosure; and a third barrier layer on a side of the first barrier layer closer to a display area. The third barrier layer includes one or more discontinuous portions.