Abstract: A semiconductor device and method for fabricating a semiconductor device includes etch selectivity tuning to enlarge epitaxy process windows. Through modification of etching processes and careful selection of materials, improvements in semiconductor device yield and performance can be delivered. Etch selectivity is controlled by using dilute gas, using assistive etch chemicals, controlling a magnitude of bias power used in the etching process, and controlling an amount of passivation gas used in the etching process, among other approaches. A recess is formed in a dummy fin in a region of the semiconductor where epitaxial growth occurs to further enlarge the epitaxy process window.

Abstract: A package structure is provided. The package structure includes a reinforced plate and multiple conductive structures surrounded by the reinforced plate. The package structure also includes a redistribution structure over the reinforced plate. The redistribution structure has multiple polymer-containing layers and multiple conductive features, and the reinforced plate is thinner than the redistribution structure. A thickness ratio of a first thickness of the reinforced plate to a second thickness of the redistribution structure is greater than about 0.5. The package structure further includes one or more chip structures bonded to the redistribution structure.

Abstract: Provided herein are methods of treating or preventing a T-cell mediated inflammatory disease or cancer in a subject in need thereof comprising administering to the subject a therapeutically effective amount of an antibody that specifically binds to human PSGL-1 in combination with a Janus kinase (JAK) inhibitor. In some embodiments, the T-cell mediated inflammatory disease is GVHD, e.g., acute GVHD or chronic GVHD.

Abstract: A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sidewall of the fin; an epitaxial source/drain region in the fin and adjacent the gate spacer; and a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of the corner spacer.

Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. Each of the plurality of semiconductor layers extends along a first lateral direction. The semiconductor device includes a gate structure that extends along a second lateral direction and comprises at least a lower portion that wraps around each of the plurality of semiconductor layers. The lower portion of the gate structure comprises a plurality of first gate sections that are laterally aligned with the plurality of semiconductor layers, respectively, and wherein each of the plurality of first gate sections has ends that each extend along the second lateral direction and present a first curvature-based profile.

Abstract: A cyclic process including an etching process, a passivation process, and a pumping out process is provided to prevent over etching of the sacrificial gate electrode, particularly when near a high-k dielectric feature. The cyclic process solves the problems of failed gate electrode layer at an end of channel region and enlarges filling windows for replacement gate structures, thus improving channel control. Compared to state-of-art solutions, embodiments of the present disclosure also enlarge volume of source/drain regions, thus improving device performance.

Abstract: Provided are devices and methods for forming devices. A device includes a workpiece; a thermal interface material (TIM) disposed over the workpiece; and a lid disposed over the workpiece, wherein the lid has an underside formed with a trench, and wherein a vertically extending portion of the TIM extends into the trench and a base portion of the TIM is located outside of the trench.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: The present disclosure provides industrially scalable methods of making (Z)-endoxifen or a salt thereof, crystalline forms of endoxifen, and compositions comprising them. The present disclosure also provides methods for treating hormone-dependent breast and hormone-dependent reproductive tract disorders.

Abstract: A duplex Bluetooth transmission tire pressure system is provided. The duplex Bluetooth transmission tire pressure system includes a host, a plural of Bluetooth tire pressure detectors and a plural of vehicle transceivers; the host is electrically connected to the plural of vehicle transceivers; the plural of vehicle transceivers and the plural of Bluetooth tire pressure detectors are Bluetooth duplex packet transmitted. The plural of Bluetooth tire pressure detectors includes a locating program and a tire condition program. The host commands the vehicle transceiver to transmit a Bluetooth controlling packet to the plural of Bluetooth tire pressure detectors to operate or stop the locating program and limit the tire condition program.

Abstract: A chip package structure is provided. The chip package structure includes a first semiconductor die bonded over an interposer substrate and a warpage release layer structure. The chip package structure also includes a first organic material layer covering an upper surface of the first semiconductor die; and a first metal layer covering an upper surface of the first organic material layer. The first metal layer has a planar shape that is the same as a planar shape of the first semiconductor die, as viewed in a top-view perspective.

Abstract: A semiconductor structure includes a substrate, a first nitride layer, a second nitride layer, a third nitride layer, and a polarity inversion layer. The first nitride layer is formed on the substrate, and the polarity inversion layer formed at a surface of the first nitride layer converts a non-metallic polar surface of the first nitride layer into a metallic polar surface of the polarity inversion layer. The second nitride layer is formed on the polarity inversion layer. The third nitride layer is formed on the second nitride layer.

Abstract: An epitaxial structure including at least a substrate, a nucleation layer, a buffer layer, a channel layer, a barrier layer, and a P-type aluminum indium gallium nitride layer is provided. The nucleation layer is formed on the substrate; the buffer layer is formed on the nucleation layer; the channel layer is formed on the buffer layer; the barrier layer is formed on the channel layer; and the P-type aluminum indium gallium nitride layer is formed on the barrier layer. The material of the P-type aluminum indium gallium nitride layer is AlInGaN with a P-type dopant, in which the contents of Al, In and Ga all change stepped-periodically or stepped-periodical-gradually in the thickness direction, and the doping concentration of the P-type dopant changes stepped-periodically or stepped-periodical-gradually in the thickness direction.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: A self-powered apparatus is used for various kinds of cycling and indoor exercise devices. The self-powered apparatus includes a pedal unit, a spindle, a generator and an energy storage element. The pedal unit includes an inner surface to form an accommodating space therein. The spindle is accommodated in the accommodating space. The generator includes a stator and a rotor. The stator is disposed on the spindle, the rotor is disposed on the inner surface of the pedal unit, and the rotor surrounds the stator correspondingly and is non-contact with the stator. The energy storage element is electrically coupled to the generator. When the pedal unit is being pedaled to rotate by a rider, the stator is fixed on the spindle, the rotor rotates relatively to the stator and along with the pedal unit, and a power is generated by the generator to charge the energy storage element.

Abstract: The present disclosure provides industrially scalable methods of making (Z)-endoxifen or a salt thereof, crystalline forms of endoxifin, and compositions comprising them. The present disclosure also provides methods for treating hormone-dependent breast and hormone-dependent reproductive tract disorders.

Abstract: An optical depth sensing apparatus includes a first light source emitting a first light beam having a first polarization state, a second light source emitting a second light beam having a second polarization state, a first sensing device sensing the first light beam and including a first metalens, and a second sensing device sensing the second light beam and including a second metalens. An electric field direction of the first polarization state is perpendicular to an electric field direction of the second polarization state. The first light beam having the first polarization state is transmitted to the first metalens, and the second light beam having the second polarization state is reflected or absorbed by the first metalens. The second light beam having the second polarization state is transmitted to the second metalens, and the first light beam having the first polarization state is reflected or absorbed by the second metalens.

Abstract: A method of fabricating a semiconductor structure includes forming a recess in an active channel structure by removing a portion thereof, filling the recess with a dielectric material, forming a cladding layer adjacent the active channel structure but not adjacent the dielectric material, and forming a gate structure comprising a first gate structure and a second gate structure around the active channel structure. A width of the dielectric material in the recess is greater than a width of the first gate structure and a width of the second gate structure.

Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another, a gate structure that comprises a lower portion and an upper portion, a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface, and an etch stop layer extends between the portion of the bottom surface of the gate spacer and the top surface of the topmost semiconductor layer.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a source/drain region disposed over a substrate, a gate electrode layer disposed over the substrate, a first gate spacer disposed between the gate electrode layer and the source/drain region, and a dielectric spacer disposed between the gate electrode layer and the source/drain region. A first portion of the dielectric spacer is in contact with a first portion of the first gate spacer. The structure further includes a sacrificial layer disposed between a second portion of the first gate spacer and a second portion of the dielectric spacer.