Patents by Inventor Yao Lin

Yao Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120294
    Abstract: A chip package includes a substrate, a semiconductor chip, and a thermal conductive structure. The chip package includes a first and a second support structures below the thermal conductive structure. The first and the second support structures connect the substrate and corners of the thermal conductive structure. The thermal conductive structure has a side edge connecting the first and the second support structures. The first and the second support structures and the side edge together define of an opening exposing a space surrounding the semiconductor chip. The first and the second support structures are disposed along a side of the substrate. The first support structure is laterally separated from the side of the substrate by a first lateral distance. The side edge of the thermal conductive structure is laterally separated from the side of the substrate by a second lateral distance different than the first lateral distance.
    Type: Application
    Filed: December 21, 2023
    Publication date: April 11, 2024
    Inventors: Shu-Shen YEH, Chin-Hua WANG, Kuang-Chun LEE, Po-Yao LIN, Shyue-Ter LEU, Shin-Puu JENG
  • Patent number: 11955455
    Abstract: A method includes bonding a first package component over a second package component. The second package component includes a plurality of dielectric layers, and a plurality of redistribution lines in the plurality of dielectric layers. The method further includes dispensing a stress absorber on the second package component, curing the stress absorber, and forming an encapsulant on the second package component and the stress absorber.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Puu Jeng, Chien-Sheng Chen, Po-Yao Lin, Po-Chen Lai, Shu-Shen Yeh
  • Patent number: 11955385
    Abstract: A semiconductor device includes a first stack structure, a second stack structure, and a third stack structure. Each of the stack structure includes semiconductor layers vertically spaced from one another. The first, second, and third stack structures all extend along a first lateral direction. The second stack structure is disposed between the first and third stack structures. The semiconductor device includes a first gate structure that extends along a second lateral direction and wraps around each of the semiconductor layers. The semiconductor layers of the first stack structure are coupled with respective source/drain structures. The semiconductor layers of the second stack structure are coupled with respective source/drain structures. The semiconductor layers of the third stack structure are coupled with a dielectric passivation layer.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Chih-Han Lin, Chen-Ping Chen, Hsiao Wen Lee
  • Patent number: 11954032
    Abstract: An apparatus for managing buffers and a method thereof are provided. The method for managing buffers includes: receiving a plurality of pieces of data, where the plurality of pieces of data includes a first piece of data and a second piece of data; allocating at least one buffer to establish a cluster buffer according to a data amount of the first piece of data; and if at least one of a first condition and a second condition is satisfied, ending a storage operation of the cluster buffer, where the first condition is that a total remaining space of the at least one buffer that has stored the data in the cluster buffer is less than a remaining space threshold, and the second condition is that the quantity of the at least one buffer that has stored the data in the cluster buffer reaches a cluster threshold.
    Type: Grant
    Filed: January 24, 2022
    Date of Patent: April 9, 2024
    Assignee: REALTEK SINGAPORE PRIVATE LIMITED
    Inventors: Mark Tsung-Han Chiang, Mei-Yao Lin
  • Patent number: 11948581
    Abstract: A smart interpreter engine is provided. The smart interpreter engine includes a speech to text converter, a natural language processing module and a translator. The speech to text converter is utilized for converting speech data corresponding to a first language into text data corresponding to the first language. The natural language processing module is utilized for converting the text data corresponding to the first language into glossary text data corresponding to the first language according to a game software. The translator is utilized for converting the glossary text data corresponding to the first language into text data corresponding to a second language.
    Type: Grant
    Filed: May 18, 2022
    Date of Patent: April 2, 2024
    Assignee: ACER INCORPORATED
    Inventors: Gianna Tseng, Shih-Cheng Huang, Shang-Yao Lin, Szu-Ting Chou
  • Patent number: 11948892
    Abstract: A method for forming a package structure is provided. The method includes forming first conductive structures and a first semiconductor die on a same side of a redistribution structure. The method includes forming an interposer substrate over the redistribution structure, wherein the first semiconductor die is between the interposer substrate and the redistribution structure, and edges of the interposer substrate extend beyond edges of the first semiconductor die. The method includes forming a second semiconductor die on the redistribution structure, wherein the first semiconductor die and the second semiconductor die are disposed on opposite sides of the redistribution structure.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Hao Tsai, Meng-Liang Lin, Po-Yao Chuang, Techi Wong, Shin-Puu Jeng
  • Publication number: 20240107804
    Abstract: A display substrate and a display device are provided. The display substrate includes a display region including light emitting units; the light emitting units are arranged into light emitting unit rows, and the light emitting units in one of the light emitting unit rows are arranged along a first direction; the light emitting units include first light emitting units. In at least part of the display region: distances, in the first direction, between a light emitting region of one first light emitting unit and light emitting regions of two of the first light emitting units adjacent to the one first light emitting units are different, and/or distances, in a second direction, between a light emitting region of one first light emitting units and the light emitting regions of two of the first light emitting units adjacent to the one first light emitting units are different.
    Type: Application
    Filed: May 31, 2021
    Publication date: March 28, 2024
    Applicants: Chengdu BOE Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Mingwen WANG, Yao HUANG, Xingliang XIAO, Zhong LU, Yuan CHEN, Yamei ZHOU, Yu SONG, Wei HU, Fuqiang LIN
  • Publication number: 20240105705
    Abstract: Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 28, 2024
    Inventors: Po-Hao Tsai, Techi Wong, Po-Yao Chuang, Shin-Puu Jeng, Meng-Wei Chou, Meng-Liang Lin
  • Patent number: 11938678
    Abstract: Disclosed herein are an adhesion blocking element, a three-dimensional printing device and a three-dimensional printing method. The adhesion blocking element comprises: one light-transmittable main body comprising a first surface and a second surface which are disposed opposite to each other, and side faces connecting the first surface and the second surface; and a plurality of microstructures arranged on the main body, wherein each microstructure has one cavity formed in the main body and one first open face which is arranged on the first surface of the main body and communicated to the cavity. The present invention decreases the adhesion between the adhesion blocking element and the cured layer by improving the structure of the adhesion blocking element itself, and eliminates the negative pressure adsorption between the cured layer and the adhesion blocking element, so that it is easier to peel the adhesion blocking element off from the cured layer.
    Type: Grant
    Filed: May 5, 2019
    Date of Patent: March 26, 2024
    Assignee: LUXCREO (BEIJING) INC.
    Inventors: Guang Zhu, Zhifeng Yao, Fang Li, Yi-Ho Lin, Yanhui Guo, Hu Wang
  • Patent number: 11942363
    Abstract: A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Kuei-Yu Kao, Chen-Ping Chen, Chih-Han Lin
  • Patent number: 11942529
    Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. Each of the plurality of semiconductor layers extends along a first lateral direction. The semiconductor device includes a gate structure that extends along a second lateral direction and comprises at least a lower portion that wraps around each of the plurality of semiconductor layers. The lower portion of the gate structure comprises a plurality of first gate sections that are laterally aligned with the plurality of semiconductor layers, respectively, and wherein each of the plurality of first gate sections has ends that each extend along the second lateral direction and present a first curvature-based profile.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Chih-Han Lin, Hsiao Wen Lee
  • Patent number: 11942396
    Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer.
    Type: Grant
    Filed: December 29, 2021
    Date of Patent: March 26, 2024
    Assignee: Industrial Technology Research Institute
    Inventors: Heng-Chieh Chien, Shu-Jung Yang, Yu-Min Lin, Chih-Yao Wang, Yu-Lin Chao
  • Publication number: 20240096705
    Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
  • Publication number: 20240096776
    Abstract: A package substrate is provided and includes a core board body and a first circuit structure and a second circuit structure disposed on opposite sides of the core board body, where the number of wiring layers of the second circuit structure is different from the number of wiring layers of the first circuit structure, so that the package substrate is asymmetrical. The first circuit structure and the second circuit structure are designed according to the thickness and coefficient of thermal expansion of the first dielectric layer of the first circuit structure and the second dielectric layer of the second circuit structure, so as to prevent the problem of warping from occurring to the package substrate.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 21, 2024
    Inventors: Andrew C. CHANG, Min-Yao CHEN, Sung-Kun LIN
  • Publication number: 20240096731
    Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Chin-Hua WANG, Po-Yao LIN, Feng-Cheng HSU, Shin-Puu JENG, Wen-Yi LIN, Shu-Shen YEH
  • Publication number: 20240097007
    Abstract: A semiconductor device is described. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Hsiao Wen Lee, Ya-Yi Tsai, Shu-Uei Jang, Chih-Han Lin, Shu-Yuan Ku
  • Publication number: 20240096893
    Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shih-Yao Lin, Chao-Cheng Chen, Chih-Han Lin, Ming-Ching Chang, Wei-Liang Lu, Kuei-Yu Kao
  • Publication number: 20240096822
    Abstract: A package structure is provided. The package structure includes a first conductive pad in a first insulating layer, a conductive via in a second insulating layer directly under the first conductive pad, and a first under bump metallurgy structure directly under the first conductive via. In a first horizontal direction, the conductive via is narrower than the first under bump metallurgy structure, and the first under bump metallurgy structure is narrower than the first conductive pad.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Chia-Kuei HSU, Ming-Chih YEW, Shu-Shen YEH, Che-Chia YANG, Po-Yao LIN, Shin-Puu JENG
  • Publication number: 20240096778
    Abstract: A semiconductor die package is provided. The semiconductor die package includes a semiconductor die and a package substrate supporting and electrically connected to the semiconductor die. The semiconductor die has a corner. The package substrate includes several conductive lines, and one of the conductive lines under the corner of the semiconductor die includes a first line segment and a second line segment connected to the first line segment. The first line segment is linear and extends in a first direction. The second line segment is non-linear and has a varying extension direction.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 21, 2024
    Inventors: Ya-Huei LEE, Shu-Shen YEH, Kuo-Ching HSU, Shyue-Ter LEU, Po-Yao LIN, Shin-Puu JENG
  • Patent number: 11935855
    Abstract: An electronic package structure and a method for manufacturing the same are provided. The electronic package structure includes a first electronic component, a second electronic component, an interconnection element, an insulation layer, and an encapsulant. The second electronic component is disposed adjacent to the first electronic component. The interconnection element is disposed between the first electronic component and the second electronic component. The insulation layer is disposed between the first electronic component and the second electronic component and has a side surface and a top surface connecting to the side surface. The encapsulant surrounds the interconnection element and at least partially covers the top surface of the insulation layer and has an extended portion in contact with the side surface of the insulation layer.
    Type: Grant
    Filed: November 24, 2021
    Date of Patent: March 19, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Wei-Jen Wang, Yi Dao Wang, Tung Yao Lin