Abstract: A piezoelectric substrate according to the present disclosure includes: a base body; an electrode formed at the base body; and a piezoelectric layer formed at the electrode and containing potassium, sodium, and niobium. A value of IR2/IR1 obtained by dividing an integrated intensity IR2 at a peak 2 by an integrated intensity IR1 at a peak 1, when a surface of the piezoelectric layer is measured by Fourier transform infrared spectroscopy, is less than 0.086. Here, the peak 1 has a strongest area intensity among peaks detected at wavenumbers of 475 cm?1 to 700 cm?1, and the peak 2 has an area intensity that is a sum of area intensities of peaks detected at wavenumbers of 1200 cm?1 to 1645 cm?1.

Abstract: A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

Abstract: A piezoelectric element according to the present disclosure includes: a substrate; a first electrode formed on the substrate; a piezoelectric layer formed on the first electrode; and a second electrode formed on the piezoelectric layer, in which the piezoelectric layer contains potassium, sodium, niobium, oxygen, and carbon, and in secondary ion mass spectrometry in the piezoelectric layer, a ratio of a maximum intensity of carbon to a maximum intensity of oxygen is 3.1×10?3 or more and 9.1×10?3 or less.

Abstract: A droplet ejection head includes a nozzle plate having a nozzle, a pressure chamber forming substrate having a pressure chamber, a vibration plate, and a piezoelectric element containing potassium, sodium, and niobium and formed on the vibration plate. The piezoelectric element includes a first electrode, a second electrode, and a piezoelectric layer located between the first electrode and the second electrode. A total thickness of the piezoelectric layer, the first electrode, and the second electrode is larger than a thickness of the vibration plate.

Abstract: A piezoelectric element according to the present disclosure includes: a first electrode; a piezoelectric layer formed at an upper part of the first electrode; and a second electrode formed at an upper part of the piezoelectric layer, in which the piezoelectric layer contains potassium, sodium, and niobium, and a Young's modulus of the piezoelectric layer measured by a nanoindentation method exceeds 130 GPa.

Abstract: A piezoelectric element includes an adhesion layer formed at a vibration plate and containing titanium, a lower electrode formed at the adhesion layer, a diffusion reduction layer formed at the lower electrode and containing iridium, a seed layer formed at the diffusion reduction layer and containing bismuth, a piezoelectric layer formed at the seed layer and containing potassium, sodium, and niobium, and an upper electrode formed at the piezoelectric layer.

Abstract: A piezoelectric element includes: a first electrode formed at a vibration plate; a seed layer formed at the first electrode; a piezoelectric film containing potassium, sodium, and niobium and formed at the seed layer; and a second electrode formed at the piezoelectric film. The piezoelectric film contains lithium and one or more first transition elements. The seed layer contains bismuth. When the piezoelectric film is divided into two equal parts in a stacking direction, the second electrode side is defined as a first region, and the first electrode side is defined as a second region, a bismuth intensity obtained by SIMS measurement at a boundary between the first region and the second region is equal to or less than 1/500 of a maximum bismuth intensity obtained by the SIMS measurement of the piezoelectric film.

Abstract: An electric current based on electric charge produced on the piezoelectric body changes by going through a first path, a second path, a third path, and a fourth path in this order. On the first path, the electric current becomes larger as the voltage becomes higher. On the second path, the electric current becomes smaller as the voltage becomes higher. On the third path, the electric current becomes larger as the voltage becomes higher. On the fourth path, the electric current becomes smaller as the voltage becomes higher.

Abstract: A piezoelectric substrate includes: a substrate; a first electrode formed on the substrate; and a piezoelectric layer formed on the first electrode and containing potassium, sodium, and niobium. A full width at half maximum of an X-ray intensity peak on a plane (100) of the piezoelectric layer in a Psi axis-direction scan result of an X-ray diffraction measurement in which a surface of the piezoelectric layer is irradiated with X-rays at an angle of 54.74° from a direction perpendicular to the surface is more than 0° and 1.2° or less.

Abstract: A piezoelectric element includes: a first electrode; an oxide layer formed on the first electrode; a piezoelectric layer formed on the oxide layer and containing potassium, sodium, and niobium; and a second electrode formed on the piezoelectric layer. When a potential difference of 10 V is applied between the first electrode and the second electrode, a current density of a leak current differs by 10,000 times or more between a case in which the first electrode is set at a high potential and a case in which the second electrode is set at a high potential.

Abstract: A piezoelectric element includes: a first electrode and a second electrode; and a piezoelectric layer provided between the first electrode and the second electrode and having a perovskite structure, in which 0<P1/P2?0.5 and 0<P1 where, when a positive predetermined voltage is applied to the piezoelectric layer, then a voltage applied to the piezoelectric layer is set to 0 V for 0.1 seconds, and then a triangular wave voltage waveform having a maximum voltage of the predetermined voltage is applied to the piezoelectric layer to obtain a hysteresis curve drawn counterclockwise, P1 is a residual polarization amount at a start point of the hysteresis curve and P2 is a residual polarization amount at an end point of the hysteresis curve.

Abstract: A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

Abstract: A piezoelectric element includes: a first electrode and a second electrode; and a piezoelectric layer provided between the first electrode and the second electrode and having a perovskite structure, in which 0<P1/P2?0.5 and 0<P1 where, when a positive predetermined voltage is applied to the piezoelectric layer, then a voltage applied to the piezoelectric layer is set to 0 V for 0.1 seconds, and then a triangular wave voltage waveform having a maximum voltage of the predetermined voltage is applied to the piezoelectric layer to obtain a hysteresis curve drawn counterclockwise, P1 is a residual polarization amount at a start point of the hysteresis curve and P2 is a residual polarization amount at an end point of the hysteresis curve.

Abstract: A piezoelectric element 1 includes a first electrode 20, a second electrode 40, and a piezoelectric layer 30 provided between the first electrode 20 and the second electrode 40. The piezoelectric layer 30 is composed of a composite oxide having a perovskite-type structure and containing potassium (K), sodium (Na), and niobium (Nb), and has a first peak derived from a (100) plane, a second peak derived from a (010) plane, and a third peak derived from a (001) plane in an X-ray diffraction pattern obtained by ?-2? measurement.

Abstract: An electric current based on electric charge produced on the piezoelectric body changes by going through a first path, a second path, a third path, and a fourth path in this order. On the first path, the electric current becomes larger as the voltage becomes higher. On the second path, the electric current becomes smaller as the voltage becomes higher. On the third path, the electric current becomes larger as the voltage becomes higher. On the fourth path, the electric current becomes smaller as the voltage becomes higher.

Abstract: A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

Abstract: To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.

Abstract: A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3?Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is ? and ?×Tc3+(1??)×Tc2 is Tc4, |Tc4?Tc2|?50° C.

Abstract: An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.

Abstract: A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a plane; an orientation film including a zirconium oxide film that is cubic crystal-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal-oriented on the orientation film.