Abstract: A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3?Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is ? and ?×Tc3+(1??)×Tc2 is Tc4, |Tc4?Tc2|?50° C.

Abstract: A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is ? and ?×Tc3+(1??)×Tc1 is Tc4, |Tc4?Tc2| is 50° C. or lower.

Abstract: A photoelectric conversion element includes a ferroelectric layer; a first electrode and a second electrode provided on a surface or a surface layer portion of the ferroelectric layer; a common electrode provided on a surface or a surface layer portion of an opposite side to a side of the ferroelectric layer on which the first electrode and the second electrode are provided; and a pair of lead-out electrodes extracting electric power from the ferroelectric layer, in which the first electrode and the second electrode are arranged alternately in a predetermined direction.

Abstract: A photoelectric conversion element includes a PN junction formed from an N-type oxide layer and a P-type oxide layer. The P-type oxide layer is formed from an oxide having a perovskite structure.

Abstract: To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.

Abstract: A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.

Abstract: A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.

Abstract: An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.

Abstract: A piezoelectric material contains a first component that is a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1, a second component that is a crystal other than a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature e Tc2, and a third component that is a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc3 different from the first component, and in which Tc2 is higher than Tc1, Tc3 is equal to or higher than Tc2, and a value of (0.1×Tc1+0.9×Tc2) is equal to or lower than 280° C.

Abstract: A photoelectric conversion element includes a PN junction formed between an N-type oxide layer and a P-type oxide layer, in which the N-type oxide layer is formed of an oxide having a perovskite structure containing titanium and strontium, a part of strontium is substituted with a +3 valence metal element or a part of titanium is substituted with a +5 valence metal element, and the amount of the metal element substituted in the N-type oxide layer is 0.01 mass % to 0.75 mass %.

Abstract: A piezoelectric material contains a first component that is a rhombohedral crystal that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1, a second component that is a crystal other than a rhombohedral crystal that is configured to have a complex oxide with the perovskite structure and Curie temperature Tc2, and a third component that is configured to have a complex oxide with the perovskite structure in which the component is formed as the same crystal system as the second component and Curie temperature Tc3, in which Tc1 is higher than Tc2, and Tc3 is equal to or higher than Tc1.

Abstract: An infrared sensor includes a heat sensing element, the heat sensing element includes a first electrode, a second electrode and a dielectric film formed between the first electrode and the second electrode. The heat sensing element senses heat based on a change of a resistance value. The dielectric film includes at least Bi and Fe.

Abstract: A liquid ejection head including a piezoelectric element having a piezoelectric layer and electrodes The piezoelectric layer is 3 ?m or less in thickness. The piezoelectric layer is made of a piezoelectric material including bismuth manganate ferrate and barium titanate. The piezoelectric layer is preferentially oriented with the (110) plane.

Abstract: A piezoelectric material contains a first component that is a rhombohedral crystal that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1 and a second component that is a crystal other than a rhombohedral crystal that is configured to have a complex oxide with the perovskite structure and Curie temperature Tc2, in which |Tc1?Tc2| is equal to or less than 50° C.

Abstract: A piezoelectric element having a piezoelectric layer and electrodes. The piezoelectric layer is 3 ?m or less in thickness. The piezoelectric layer is made of a piezoelectric material containing a perovskite compound including bismuth manganate ferrate and barium titanate. The piezoelectric layer is preferentially oriented with the (110) plane. A full width at half maximum of the X-ray diffraction peak attributed to the (110) plane is 0.24° or more and 0.28° or less.

Abstract: A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.

Abstract: A photoelectric conversion element includes a PN junction formed between an N-type oxide layer and a P-type oxide layer, in which the N-type oxide layer is formed of an oxide having a perovskite structure containing titanium and strontium, a part of strontium is substituted with a +3 valence metal element or a part of titanium is substituted with a +5 valence metal element, and the amount of the metal element substituted in the N-type oxide layer is 0.01 mass % to 0.75 mass %.

Abstract: A method for manufacturing a piezoelectric film includes: forming a piezoelectric precursor film including Bi, Fe, Mn, Ba, and Ti; and obtaining a piezoelectric film preferentially oriented with the (110) plane by crystallizing the piezoelectric precursor film.

Abstract: A piezoelectric element used between a lowest use temperature T1 and a highest use temperature T2, includes a first electrode, a piezoelectric layer provided on the first electrode and made of a piezoelectric material including a composite oxide having a perovskite structure, the piezoelectric material having a morphotropic phase boundary which is inclined with respect to a temperature axis, and the piezoelectric material satisfying at least one of formulas T3?T1?T4 and T3?T2?T4, where T3 is a temperature corresponding to the morphotropic phase boundary at a lowest point and T4 is a temperature corresponding to the morphotropic phase boundary at a highest point and a second electrode provided on the piezoelectric layer.

Abstract: A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.