Patents by Inventor Yasuaki Hamada

Yasuaki Hamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170313625
    Abstract: A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3?Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is ? and ?×Tc3+(1??)×Tc2 is Tc4, |Tc4?Tc2|?50° C.
    Type: Application
    Filed: December 26, 2014
    Publication date: November 2, 2017
    Inventors: Koji SUMI, Kazuya KITADA, Tomohiro SAKAI, Yasuaki HAMADA, Tetsuya ISSHIKI, Satoshi KIMURA, Akio ITO, Tsuneo HANDA
  • Publication number: 20170309810
    Abstract: A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is ? and ?×Tc3+(1??)×Tc1 is Tc4, |Tc4?Tc2| is 50° C. or lower.
    Type: Application
    Filed: December 26, 2014
    Publication date: October 26, 2017
    Inventors: Koji SUMI, Kazuya KITADA, Tomohiro SAKAI, Yasuaki HAMADA, Tetsuya ISSHIKI, Satoshi KIMURA, Akio ITO, Tsuneo HANDA
  • Patent number: 9774295
    Abstract: A photoelectric conversion element includes a ferroelectric layer; a first electrode and a second electrode provided on a surface or a surface layer portion of the ferroelectric layer; a common electrode provided on a surface or a surface layer portion of an opposite side to a side of the ferroelectric layer on which the first electrode and the second electrode are provided; and a pair of lead-out electrodes extracting electric power from the ferroelectric layer, in which the first electrode and the second electrode are arranged alternately in a predetermined direction.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: September 26, 2017
    Assignee: Seiko Epson Corporation
    Inventors: Satoru Hosono, Satoshi Kimura, Setsuya Iwashita, Yasuaki Hamada
  • Patent number: 9748425
    Abstract: A photoelectric conversion element includes a PN junction formed from an N-type oxide layer and a P-type oxide layer. The P-type oxide layer is formed from an oxide having a perovskite structure.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: August 29, 2017
    Assignee: Seiko Epson Corporation
    Inventors: Yasuaki Hamada, Satoshi Kimura, Setsuya Iwashita, Akio Konishi
  • Publication number: 20170179367
    Abstract: To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.
    Type: Application
    Filed: December 9, 2016
    Publication date: June 22, 2017
    Inventors: Takeshi KIJIMA, Yuuji HONDA, Yasuaki HAMADA
  • Patent number: 9548406
    Abstract: A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: January 17, 2017
    Assignee: Seiko Epson Corporation
    Inventors: Takayuki Yonemura, Yoshihiko Yokoyama, Yasuaki Hamada
  • Patent number: 9503656
    Abstract: A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: November 22, 2016
    Assignee: Seiko Epson Corporation
    Inventors: Takayuki Yonemura, Yasuaki Hamada, Yoshihiko Yokoyama
  • Publication number: 20160190429
    Abstract: An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.
    Type: Application
    Filed: December 9, 2015
    Publication date: June 30, 2016
    Applicant: YOUTEC CO., LTD.
    Inventors: Takeshi KIJIMA, Yasuaki HAMADA, Takeshi NOMURA
  • Patent number: 9324933
    Abstract: A piezoelectric material contains a first component that is a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1, a second component that is a crystal other than a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature e Tc2, and a third component that is a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc3 different from the first component, and in which Tc2 is higher than Tc1, Tc3 is equal to or higher than Tc2, and a value of (0.1×Tc1+0.9×Tc2) is equal to or lower than 280° C.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: April 26, 2016
    Assignee: Seiko Epson Corporation
    Inventors: Koji Sumi, Kazuya Kitada, Tomohiro Sakai, Yasuaki Hamada, Tetsuya Isshiki, Satoshi Kimura, Akio Ito, Tsuneo Handa
  • Patent number: 9281432
    Abstract: A photoelectric conversion element includes a PN junction formed between an N-type oxide layer and a P-type oxide layer, in which the N-type oxide layer is formed of an oxide having a perovskite structure containing titanium and strontium, a part of strontium is substituted with a +3 valence metal element or a part of titanium is substituted with a +5 valence metal element, and the amount of the metal element substituted in the N-type oxide layer is 0.01 mass % to 0.75 mass %.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: March 8, 2016
    Assignee: Seiko Epson Corporation
    Inventor: Yasuaki Hamada
  • Patent number: 9274004
    Abstract: An infrared sensor includes a heat sensing element, the heat sensing element includes a first electrode, a second electrode and a dielectric film formed between the first electrode and the second electrode. The heat sensing element senses heat based on a change of a resistance value. The dielectric film includes at least Bi and Fe.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: March 1, 2016
    Assignee: Seiko Epson Corporation
    Inventors: Takayuki Yonemura, Takafumi Noda, Yasushi Tsuchiya, Yasuaki Hamada
  • Patent number: 9276193
    Abstract: A piezoelectric material contains a first component that is a rhombohedral crystal that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1, a second component that is a crystal other than a rhombohedral crystal that is configured to have a complex oxide with the perovskite structure and Curie temperature Tc2, and a third component that is configured to have a complex oxide with the perovskite structure in which the component is formed as the same crystal system as the second component and Curie temperature Tc3, in which Tc1 is higher than Tc2, and Tc3 is equal to or higher than Tc1.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: March 1, 2016
    Assignee: Seiko Epson Corporation
    Inventors: Koji Sumi, Kazuya Kitada, Tomohiro Sakai, Yasuaki Hamada, Tetsuya Isshiki, Satoshi Kimura, Akio Ito, Tsuneo Handa
  • Patent number: 9211710
    Abstract: A liquid ejection head including a piezoelectric element having a piezoelectric layer and electrodes The piezoelectric layer is 3 ?m or less in thickness. The piezoelectric layer is made of a piezoelectric material including bismuth manganate ferrate and barium titanate. The piezoelectric layer is preferentially oriented with the (110) plane.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: December 15, 2015
    Assignee: Seiko Epson Corporation
    Inventor: Yasuaki Hamada
  • Patent number: 9190601
    Abstract: A piezoelectric material contains a first component that is a rhombohedral crystal that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1 and a second component that is a crystal other than a rhombohedral crystal that is configured to have a complex oxide with the perovskite structure and Curie temperature Tc2, in which |Tc1?Tc2| is equal to or less than 50° C.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: November 17, 2015
    Assignee: Seiko Epson Corporation
    Inventors: Koji Sumi, Kazuya Kitada, Tomohiro Sakai, Yasuaki Hamada, Tetsuya Isshiki, Satoshi Kimura, Akio Ito, Tsuneo Handa
  • Patent number: 9144975
    Abstract: A piezoelectric element having a piezoelectric layer and electrodes. The piezoelectric layer is 3 ?m or less in thickness. The piezoelectric layer is made of a piezoelectric material containing a perovskite compound including bismuth manganate ferrate and barium titanate. The piezoelectric layer is preferentially oriented with the (110) plane. A full width at half maximum of the X-ray diffraction peak attributed to the (110) plane is 0.24° or more and 0.28° or less.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: September 29, 2015
    Assignee: Seiko Epson Corporation
    Inventor: Yasuaki Hamada
  • Publication number: 20150172556
    Abstract: A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.
    Type: Application
    Filed: December 11, 2014
    Publication date: June 18, 2015
    Inventors: Takayuki YONEMURA, Yasuaki HAMADA, Yoshihiko YOKOYAMA
  • Publication number: 20150155418
    Abstract: A photoelectric conversion element includes a PN junction formed between an N-type oxide layer and a P-type oxide layer, in which the N-type oxide layer is formed of an oxide having a perovskite structure containing titanium and strontium, a part of strontium is substituted with a +3 valence metal element or a part of titanium is substituted with a +5 valence metal element, and the amount of the metal element substituted in the N-type oxide layer is 0.01 mass % to 0.75 mass %.
    Type: Application
    Filed: December 1, 2014
    Publication date: June 4, 2015
    Inventor: Yasuaki HAMADA
  • Patent number: 9034418
    Abstract: A method for manufacturing a piezoelectric film includes: forming a piezoelectric precursor film including Bi, Fe, Mn, Ba, and Ti; and obtaining a piezoelectric film preferentially oriented with the (110) plane by crystallizing the piezoelectric precursor film.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: May 19, 2015
    Assignee: Seiko Epson Corporation
    Inventor: Yasuaki Hamada
  • Publication number: 20150116428
    Abstract: A piezoelectric element used between a lowest use temperature T1 and a highest use temperature T2, includes a first electrode, a piezoelectric layer provided on the first electrode and made of a piezoelectric material including a composite oxide having a perovskite structure, the piezoelectric material having a morphotropic phase boundary which is inclined with respect to a temperature axis, and the piezoelectric material satisfying at least one of formulas T3?T1?T4 and T3?T2?T4, where T3 is a temperature corresponding to the morphotropic phase boundary at a lowest point and T4 is a temperature corresponding to the morphotropic phase boundary at a highest point and a second electrode provided on the piezoelectric layer.
    Type: Application
    Filed: October 23, 2014
    Publication date: April 30, 2015
    Inventor: Yasuaki HAMADA
  • Publication number: 20150084151
    Abstract: A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.
    Type: Application
    Filed: September 25, 2014
    Publication date: March 26, 2015
    Inventors: Takayuki YONEMURA, Yoshihiko YOKOYAMA, Yasuaki HAMADA