Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Abstract: An object of the present invention relates to an arrangement of a manufactured probe in a prober apparatus without being exposed to an atmospheric air. The present invention relates to a probe storage container which can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source or the like, without being exposed to the atmospheric air. In accordance with the present invention, it is possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, and it is possible to avoid a formation of the oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken.

Abstract: The disclosed subject matter is related to a circuit pattern inspection apparatus for detecting a gradual changing of defect expanding over a large area of the semiconductor wafer. In order to detect a gradual changing of a defect related condition expanding over a large area of the semiconductor wafer, comparison is made between dies on a wafer that are separated from each other by a distance of at least one die width. For example, when a value according to a difference between such dies exceeds a pre-determined value, an existence of the gradual changing can be confirmed.

Abstract: An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.

Abstract: An apparatus for processing a defect candidate image, including: a scanning electron microscope for taking an enlarged image of a specimen by irradiating and scanning a converged electron beam onto the specimen and detecting charged particles emanated from the specimen by the irradiation; an image processor for processing the image taken by the scanning electron microscope to detect defect candidates on the specimen and classify the detected defect candidates into one of plural classes; a memory for storing output from the image processor including images of the detected defect candidates; and a display unit which displays information stored in the memory and an indicator, wherein the display unit displays a distribution of the detected and classified defect candidates in a map format by distinguishing by the classified class, and the display unit also displays an image of a defect candidate stored in the memory together with the map which is indicated on the map by the indicator.

Abstract: In a pattern inspecting apparatus, images of places which can be expected to be the same pattern are compared with one another. However, a comparison of images obtained by different stage scans and the occurrence of a place capable of being inspected only once lead to a deterioration in the performance of detecting various error defects and an area incapable of being inspected, respectively. For solving this problem, defects detected in a high sensitivity condition are regarded as defect candidates and a critical threshold value, used as a boundary to detect a smaller value as a defect, of a defect candidate portion is obtained by an image processing circuit or an image of the defect candidate portion is obtained by processing with software. Further, the critical threshold value thus obtained is compared with plural threshold values, thereby permitting plural inspection results to be obtained in a single inspection.

Abstract: In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.

Abstract: A pattern inspection apparatus including: an image detecting part for detecting a digital image of an object substrate; a display having a screen on which the digital image of the object substrate and/or a distribution of defect candidates in a map form are displayable; an input device for inputting information of a non-inspection region to be masked on the object substrate by defining a region on the screen on which said distribution of defect candidates is displayed in a map form; a memory part for storing coordinate data, pattern data or feature quantity data of the non-inspection region to be masked on the object substrate inputted on the screen by the input device; and a defect judging part in which the digital image detected by the image detecting part is examined in a state that a region matching with a condition stored in the memory part is masked and a defect is detected in a region other than said masked region.

Abstract: The disclosed subject matter is related to a circuit pattern inspection apparatus for detecting a gradual changing of defect expanding over a large area of the semiconductor wafer. In order to detect a gradual changing of a defect related condition expanding over a large area of the semiconductor wafer, comparison is made between dies on a wafer that are separated from each other by a distance of at least one die width. For example, when a value according to a difference between such dies exceeds a pre-determined value, an existence of the gradual changing can be confirmed.

Abstract: In a pattern inspecting apparatus, images of places which can be expected to be the same pattern are compared with one another. However, a comparison of images obtained by different stage scans and the occurrence of a place capable of being inspected only once lead to a deterioration in the performance of detecting various error defects and an area incapable of being inspected, respectively. For solving this problem, defects detected in a high sensitivity condition are regarded as defect candidates and a critical threshold value, used as a boundary to detect a smaller value as a defect, of a defect candidate portion is obtained by an image processing circuit or an image of the defect candidate portion is obtained by processing with software. Further, the critical threshold value thus obtained is compared with plural threshold values, thereby permitting plural inspection results to be obtained in a single inspection.

Abstract: A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects, while masking a region pre-registered in terms of coordinates, or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to determine whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned on/off, or they are so displayed as to be distinguishable from the other defects.

Abstract: Conventionally, defect data outputted by an inspection system comprised only characteristic quantitative data, such as coordinate data, area, and projected length, and only the coordinate data for moving to a defect location could be utilized effectively. By contrast, the present invention, by using image data in addition to characteristic quantitative data as the defect data for an inspection system, enables the retrieval of image data via an outside results confirmation system. Further, in the case of defect data of a plurality of substrates, it is enabled to display a defect image during inspection by the fact that similar defects are retrieved via images and retrieval results are displayed as trends makes it possible to display a defect image during inspection by searching similar defects on images and displaying them as a trend, designating a substrate on the trend, thereby displaying the defect map thereof and designating a defect on the defect map.

Abstract: A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.

Abstract: In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.

Abstract: A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects, while masking a region pre-registered in terms of coordinates, or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to determine whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned on/off, or they are so displayed as to be distinguishable from the other defects.

Abstract: A defect inspecting apparatus in which a plurality of probes to measure electric characteristics of a sample including a fine wiring pattern are combined with a charged-particle beam unit includes graphic user interfaces (GUI) to simply control the plural probes. The apparatus includes a probe image processing unit to display the plural probes on a display; a selecting unit to select, from the probes displayed on the display, a probe to be operated; and a display unit to simultaneously display the probe selecting unit and information indicating that the selected probe is an operable probe, or the probe is in a non-selected state.

Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.

Abstract: A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.

Abstract: Conventionally, defect data outputted by an inspection system comprised only characteristic quantitative data, such as coordinate data, area, and projected length, and only the coordinate data for moving to a defect location could be utilized effectively. By contrast, by using image data in addition to characteristic quantitative data as the defect data for an inspection system, the retrieval of image data via an outside results confirmation system is made possible. Further, for defect data of a plurality of substrates, it is possible to display a defect image during inspection by the fact that similar defects are retrieved via images and retrieval results are displayed as trends, which makes it possible to display a defect image during inspection by searching similar defects on images and displaying them as a trend, and designating a substrate on the trend, thereby displaying the defect map thereof and designating a defect on the defect map.

Abstract: A defect inspecting apparatus in which a plurality of probes to measure electric characteristics of a sample including a fine wiring pattern are combined with a charged-particle beam unit includes graphic user interfaces (GUI) to simply control the plural probes. The apparatus includes a probe image processing unit to display the plural probes on a display; a selecting unit to select, from the probes displayed on the display, a probe to be operated; and a display unit to simultaneously display the probe selecting unit and information indicating that the selected probe is an operable probe, or the probe is in a non-selected state.