Patents by Inventor Yasuhiko Nara
Yasuhiko Nara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7989766Abstract: A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.Type: GrantFiled: April 1, 2009Date of Patent: August 2, 2011Assignee: Hitachi High-Technologies CorporationInventors: Yasuhiko Nara, Tohru Ando, Masahiro Sasajima, Tsutomu Saito, Tomoharu Obuki, Isamu Sekihara
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Publication number: 20110140729Abstract: An object of the invention is to provide an inspection device which has a function of preventing electric discharge so that an absorbed current is detected more efficiently. In the invention, absorbed current detectors are mounted in a vacuum specimen chamber and capacitance of a signal wire from each probe to corresponding one of the absorbed current detectors is reduced to the order of pF so that even an absorbed current signal with a high frequency of tens of kHz or higher can be detected. Moreover, signal selectors are operated by a signal selection controller so that signal lines of a semiconductor parameters analyzer are electrically connected to the probes brought into contact with a sample. Accordingly, electrical characteristics of the sample can be measured without limitation of signal paths connected to the probes to transmission of an absorbed current. In addition, a resistance for slow leakage of electric charge is provided in each probe stage or a sample stage.Type: ApplicationFiled: July 29, 2009Publication date: June 16, 2011Applicant: Hitachi High-Technologies CorporationInventors: Mitsuhiro Nakamura, Hiroshi Toyama, Yasuhiko Nara, Katsuo Oki, Tomoharu Obuki, Masahiro Sasajima
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Patent number: 7957579Abstract: An apparatus for processing a defect candidate image, including: a scanning electron microscope for taking an enlarged image of a specimen by irradiating and scanning a converged electron beam onto the specimen and detecting charged particles emanated from the specimen by the irradiation; an image processor for processing the image taken by the scanning electron microscope to detect defect candidates on the specimen and classify the detected defect candidates into one of plural classes; a memory for storing output from the image processor including images of the detected defect candidates; and a display unit which displays information stored in the memory and an indicator, wherein the display unit displays a distribution of the detected and classified defect candidates in a map format by distinguishing by the classified class, and the display unit also displays an image of a defect candidate stored in the memory together with the map which is indicated on the map by the indicator.Type: GrantFiled: October 31, 2007Date of Patent: June 7, 2011Assignee: Hitachi, Ltd.Inventors: Takashi Hiroi, Masahiro Watanabe, Chie Shishido, Aritoshi Sugimoto, Maki Tanaka, Hiroshi Miyai, Asahiro Kuni, Yasuhiko Nara
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Publication number: 20110093991Abstract: An object of the present invention relates to an arrangement of a manufactured probe in a prober apparatus without being exposed to an atmospheric air. The present invention relates to a probe storage container which can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source or the like, without being exposed to the atmospheric air. In accordance with the present invention, it is possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, and it is possible to avoid a formation of the oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken.Type: ApplicationFiled: December 23, 2010Publication date: April 21, 2011Applicant: Hitachi High-Technologies CorporationInventors: Masanori Gunji, Katsunori Nakajima, Yasuhiko Nara, Tsutomu Saito, Shigeru Izawa
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Patent number: 7894658Abstract: An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.Type: GrantFiled: October 31, 2007Date of Patent: February 22, 2011Assignee: Hitachi, Ltd.Inventors: Takashi Hiroi, Masahiro Watanabe, Chie Shishido, Aritoshi Sugimoto, Maki Tanaka, Hiroshi Miyai, Asahiro Kuni, Yasuhiko Nara
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Patent number: 7875156Abstract: A probe storage container can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source, for example, without being exposed to the atmospheric air. It is thus possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, avoiding formation of an oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken. Accordingly, it is possible to stably measure an electric characteristic of a semiconductor device or the like on the wafer.Type: GrantFiled: February 7, 2008Date of Patent: January 25, 2011Assignee: Hitachi High-Technologies CorporationInventors: Masanori Gunji, Katsunori Nakajima, Yasuhiko Nara, Tsutomu Saito, Shigeru Izawa
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Patent number: 7855363Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: GrantFiled: August 12, 2008Date of Patent: December 21, 2010Assignee: Hitachi High-Technologies CorporationInventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Publication number: 20100246933Abstract: An apparatus for processing a defect candidate image, including: a scanning electron microscope for taking an enlarged image of a specimen by irradiating and scanning a converged electron beam onto the specimen and detecting charged particles emanated from the specimen by the irradiation; an image processor for processing the image taken by the scanning electron microscope to detect defect candidates on the specimen and classify the detected defect candidates into one of plural classes; a memory for storing output from the image processor including images of the detected defect candidates; and a display unit which displays information stored in the memory and an indicator, wherein the display unit displays a distribution of the detected and classified defect candidates in a map format by distinguishing by the classified class, and the display unit also displays an image of a defect candidate stored in the memory together with the map which is indicated on the map by the indicator.Type: ApplicationFiled: October 31, 2007Publication date: September 30, 2010Inventors: Takashi Hiroi, Masahiro Watanabe, Chie Shishido, Aritoshi Sugimoto, Maki Tanaka, Hiroshi Miyai, Asahiro Kuni, Yasuhiko Nara
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Publication number: 20100200749Abstract: A semiconductor testing method capable of quickly counting semiconductor cells in which a seemingly horizontal or vertical line is drawn with a mouse, and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell is surrounded in a rectangular frame by a ruler, and the number of cells is displayed with a numeric value.Type: ApplicationFiled: April 22, 2010Publication date: August 12, 2010Applicant: Hitachi High-Technologies CorporationInventors: Tohru ANDO, Yasuhiko Nara, Tsutomu Saito, Shinichi Kato, Takeshi Sunaoshi
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Publication number: 20100177954Abstract: A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.Type: ApplicationFiled: March 22, 2010Publication date: July 15, 2010Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION.Inventors: Tohru ANDO, Tsutomu Saito, Yasuhiko Nara, Mikio Takagi, Koichi Takauchi
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Patent number: 7732791Abstract: A semiconductor testing method capable of quickly counting semiconductor cells in which a seemingly horizontal or vertical line is drawn with a mouse, and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell is surrounded in a rectangular frame by a ruler, and the number of cells is displayed with a numeric value.Type: GrantFiled: August 6, 2007Date of Patent: June 8, 2010Assignee: Hitachi High-Technologies CorporationInventors: Tohru Ando, Yasuhiko Nara, Tsutomu Saito, Shinichi Kato, Takeshi Sunaoshi
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Publication number: 20100116986Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.Type: ApplicationFiled: January 21, 2010Publication date: May 13, 2010Applicant: Hitachi High-Technologies CorporationInventors: Tomoharu Obuki, Hiroshi Toyama, Yasuhiro Mitsui, Munetoshi Fukui, Yasuhiko Nara, Tohru Ando, Katsuo Ooki, Tsutomu Saito, Masaaki Komori
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Patent number: 7700916Abstract: A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.Type: GrantFiled: October 20, 2006Date of Patent: April 20, 2010Assignee: Hitachi High-Technologies CorporationInventors: Tohru Ando, Tsutomu Saito, Yasuhiko Nara, Mikio Takagi, Koichi Takauchi
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Patent number: 7663104Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.Type: GrantFiled: February 27, 2008Date of Patent: February 16, 2010Assignee: Hitachi High-Technologies CorporationInventors: Tomoharu Obuki, Hiroshi Toyama, Yasuhiro Mitsui, Munetoshi Fukui, Yasuhiko Nara, Tohru Ando, Katsuo Ooki, Tsutomu Saito, Masaaki Komori
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Publication number: 20100019148Abstract: In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.Type: ApplicationFiled: October 8, 2009Publication date: January 28, 2010Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasuhiko NARA, Masaaki Nojiri, Kouichi Hayakawa, Hiroyuki Shinada, Yukio Hagita
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Publication number: 20090250610Abstract: A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.Type: ApplicationFiled: April 1, 2009Publication date: October 8, 2009Inventors: Yasuhiko NARA, Tohru ANDO, Masahiro SASAJIMA, Tsutomu SAITO, Tomoharu OBUKI, Isamu SEKIHARA
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Patent number: 7532328Abstract: The disclosed subject matter is related to a circuit pattern inspection apparatus for detecting a gradual changing of defect expanding over a large area of the semiconductor wafer. In order to detect a gradual changing of a defect related condition expanding over a large area of the semiconductor wafer, comparison is made between dies on a wafer that are separated from each other by a distance of at least one die width. For example, when a value according to a difference between such dies exceeds a pre-determined value, an existence of the gradual changing can be confirmed.Type: GrantFiled: October 15, 2007Date of Patent: May 12, 2009Assignee: Hitachi High-Technologies CorporationInventors: Yasuhiko Nara, Masaaki Nojiri, Kouichi Hayakawa, Takashi Hiroi
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Publication number: 20090045338Abstract: An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.Type: ApplicationFiled: August 12, 2008Publication date: February 19, 2009Inventors: Hiroshi Miyai, Ryuichi Funatsu, Taku Ninomiya, Yasuhiko Nara
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Patent number: 7457453Abstract: A pattern inspection apparatus including: an image detecting part for detecting a digital image of an object substrate; a display having a screen on which the digital image of the object substrate and/or a distribution of defect candidates in a map form are displayable; an input device for inputting information of a non-inspection region to be masked on the object substrate by defining a region on the screen on which said distribution of defect candidates is displayed in a map form; a memory part for storing coordinate data, pattern data or feature quantity data of the non-inspection region to be masked on the object substrate inputted on the screen by the input device; and a defect judging part in which the digital image detected by the image detecting part is examined in a state that a region matching with a condition stored in the memory part is masked and a defect is detected in a region other than said masked region.Type: GrantFiled: July 24, 2007Date of Patent: November 25, 2008Assignee: Hitachi, Ltd.Inventors: Takashi Hiroi, Masahiro Watanabe, Chie Shishido, Aritoshi Sugimoto, Maki Tanaka, Hiroshi Miyai, Asahiro Kuni, Yasuhiko Nara
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Patent number: D637098Type: GrantFiled: April 26, 2010Date of Patent: May 3, 2011Assignee: Hitachi High-Technologies CorporationInventors: Mitsuru Oonuma, Akira Omachi, Kazuhiko Nishiyama, Hiroyuki Suzuki, Yasuhiko Nara