Abstract: The present invention relates to a method for improving symptom of mood disorder or its related disorder comprising a step of allowing Gm1 protein and the like to be excessively present in a brain of a mammal, and a non-human mammal, to which the method has been applied, and the like.

Abstract: A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Abstract: Provided are a technique for high-speed switching between clock signals different in frequency, and a clock-control-signal-generation circuit which serves to generate a control signal for clock switching in a clock selector operable to switch between clock signals including a first clock signal based on first and second clock-stop-permission signals and a clock-resume-permission signal. The clock-control-signal-generation circuit includes: a before-switching clock processing unit; and an after-switching clock processing unit. In each of the before- and after-switching clock processing units, the high-frequency clock processing subunit and the low-frequency clock processing subunit take partial charges of processing of clock signals involved in the switching respectively, whereby the processing is speeded up.

Abstract: A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Abstract: A novel protein (Gm1) includes an amino acid sequence part having a high homology with a domain having a high homology with a GTP binding site and a GTPase site conserved among G protein ? subunits and a trimer forming domain conserved among G protein ? subunits. The Gm1 protein is involved in signal transduction via a G protein-coupled receptor (GPCR) stimulation. The Gm1 protein is expressed intensively in human brain, thymus, testes, spleen, small intestine, uterus and heart.

Abstract: A novel protein (Gm1) includes an amino acid sequence part having a high homology with a domain having a high homology with a GTP binding site and a GTPase site conserved among G protein ? subunits and a trimer forming domain conserved among G protein ? subunits. The Gm1 protein is involved in signal transduction via a G protein-coupled receptor (GPCR) stimulation. The Gm1 protein is expressed intensively in human brain, thymus, testes, spleen, small intestine, uterus and heart. A method for screening for a substance capable of regulating a cellular signal transduction employs a polynucleotide encoding the Gm1 protein.

Abstract: A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Abstract: A head IC adjusts an amplitude level of head read signals with regard to scattering in head output characteristics, so as to conform to the input dynamic range of the read channel AGC. An AGC amplifier is provided in a head IC connected to a read channel, and the feedback response speed of the AGC circuit of the head IC is set to be substantially slower than the feedback response speed of the AGC circuit of the read channel. Within the head IC, the amplitude of signals from the head is automatically adjusted, enabling adjustment of the input signal level to the input dynamic range of the AGC amplifier of the read channel. The AGC circuit of the head IC has no effect on the faster AGC operation of the AGC circuit of the read channel.

Abstract: A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Abstract: The present invention relates to a novel compound characterized by having a one-dimensional tunnel structure and being represented by the chemical formula H2Ti12O25, a method for manufacturing the same, and a lithium secondary battery containing, as a constituent thereof, an electrode produced by using the novel titanium oxide as an active material, and expected to demonstrate superior charge/discharge cycle characteristics over a long period of time as well as high capacity.

Abstract: A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Abstract: A storage apparatus and a magnetic head driving device includes a recording/reproducing head including a write element and a magnetoresistive element, a driving circuit for driving the write element and the magnetoresistive element, and write wires and read wires which connect the recording/reproducing head to the driving circuit. The write wires and the read wires are disposed in parallel in at least a portion between the recording/reproducing head and the driving circuit. At a location between the recording/reproducing head and the driving circuit, either of the write wires and the read wires are disposed so that a polarity of the either of the write wires and the read wires is reversed with respect to a polarity of the other of the write wires and the read wires.

Abstract: A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly comprise laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Abstract: The present invention relates to a method for improving symptom of mood disorder or its related disorder comprising a step of allowing Gm1 protein and the like to be excessively present in a brain of a mammal, and a non-human mammal, to which the method has been applied, and the like.

Abstract: The present invention relates to a method for improving symptom of mood disorder or its related disorder comprising a step of allowing activated-type Gm1 protein and the like to be excessively present in a brain of a mammal, and a non-human mammal, to which the method has been applied, and the like.

Abstract: In a semiconductor memory device, third and fourth transistors are configured as a vertical structure. The third transistor is laminated over a first transistor, and the fourth transistor is laminated over a second transistor, whereby a reduction in cell area is achieved. A voltage, which is set on the condition that the difference between a source potential applied to each of the first and second transistors and the potential of a select level of a word line becomes greater than or equal to a threshold voltage of each of the third and fourth transistors, is supplied to a source electrode of each of the first and second transistors, to thereby perform “0” write compensation.

Abstract: A novel protein (Gm1) includes an amino acid sequence part having a high homology with a domain having a high homology with a GTP binding site and a GTPase site conserved among G protein ? subunits and a trimer forming domain conserved among G protein ? subunits. The Gm1 protein is involved in signal transduction via a G protein-coupled receptor (GPCR) stimulation. The Gm1 protein is expressed intensively in human brain, thymus, testes, spleen, small intestine, uterus and heart. A method for screening for a substance capable of regulating a cellular signal transduction employs a polynucleotide encoding the Gm1 protein.

Abstract: An electronic circuit device has a high-density mount board (2), on which are disposed a microcomputer (3) and random access memory (7) which are connected to each other through an exclusive memory bus (12) for high-speed data transfer, a programmable device (8) which is a variable logic circuit represented by FPGA, and an electrically-rewritable nonvolatile memory (16) which can store the operation program of the microcomputer. The high-density mount board has external mounting pins on the bottom surface so that it can be mounted on a mother board in the same manner as a system on-chip multi-chip module. With an intended logic function being set on the programmable device, a hardware-based function to be realized by the electronic circuit device can be simulated. With an operation program being written to the nonvolatile memory, a software-based function to be realized can be simulated.

Abstract: We identified a novel protein (Gm1) comprising an amino acid sequence part having a high homology with a domain having a high homology with a GTP binding site and a GTPase site conserved among G protein ? subunits and a trimer forming domain conserved among G protein ? subunits. The Gm1 is involved in an signal transduction via a G protein-coupled receptor (GPCR) stimulation. Accordingly, this protein is considered to be a novel G protein. The Gm1 is expressed intensively in human brain, thymus, testes, spleen, small intestine, uterus and heart. We also established a method for screening for a substance capable of regulating a cellular signal transduction employing a polynucleotide encoding the Gm1.

Abstract: A head IC adjusts an amplitude level of head read signals with regard to scattering in head output characteristics, so as to conform to the input dynamic range of the read channel AGC. An AGC amplifier is provided in a head IC connected to a read channel, and the feedback response speed of the AGC circuit of the head IC is set to be substantially slower than the feedback response speed of the AGC circuit of the read channel. Within the head IC, the amplitude of signals from the head is automatically adjusted, enabling adjustment of the input signal level to the input dynamic range of the AGC amplifier of the read channel. The AGC circuit of the head IC has no effect on the faster AGC operation of the AGC circuit of the read channel.