Abstract: A winding-start region that is closer to a winding-start side than a positive electrode core exposed part has positive electrode mixture unit amounts of a positive electrode inner mixture layer and a positive electrode outer mixture layer that are approximately uniform or increasing toward a winding-end side in the winding direction. A winding-start facing region has negative electrode mixture unit amounts of a negative electrode inner mixture layer and a negative electrode outer mixture layer that are approximately uniform or increasing toward the winding-end side. The positive electrode inner mixture layer and the positive electrode outer mixture layer each have a positive electrode mixture unit amount that differs at two or more locations, excluding the positive electrode core exposed part. The negative electrode inner mixture layer and the negative electrode outer mixture each have a fluctuating part where the negative electrode mixture unit amount fluctuates toward the winding-end side.

Abstract: A winding-start region that is closer to a winding-start side than a positive electrode core exposed part has positive electrode mixture unit amounts of a positive electrode inner mixture layer and a positive electrode outer mixture layer that are approximately uniform or increasing toward a winding-end side in the winding direction. A winding-start facing region has negative electrode mixture unit amounts of a negative electrode inner mixture layer and a negative electrode outer mixture layer that are approximately uniform or increasing toward the winding-end side. The positive electrode inner mixture layer and the positive electrode outer mixture layer each have a positive electrode mixture unit amount that differs at two or more locations, excluding the positive electrode core exposed part. The negative electrode inner mixture layer and the negative electrode outer mixture each have a fluctuating part where the negative electrode mixture unit amount fluctuates toward the winding-end side.

Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, a separator disposed between the positive electrode and the negative electrode, and a nonaqueous electrolyte having permeated the positive electrode, the negative electrode and the separator. The nonaqueous electrolyte includes a lithium salt and a nonaqueous solvent in which the lithium salt is dissolved. The lithium salt concentration in the nonaqueous electrolyte present within the positive electrode is higher than the lithium salt concentration in the nonaqueous electrolyte present within the negative electrode.

Abstract: A semiconductor device includes a metal plate capacitor that includes a heat-resistant metal plate and a capacitor unit including a sintered dielectric formed on at least one surface of the heat-resistant metal plate, a semiconductor chip disposed on the metal plate capacitor, a connector configured to electrically connect the semiconductor chip and the metal plate capacitor, and a protector configured to protect the semiconductor chip, the metal plate capacitor, and the connector.

Abstract: Jitter that becomes a problem in a semiconductor part which performs high-speed signal processing is reduced. A semiconductor device includes a heat-resistant metal plate, a capacitor part having a lower electrode, a sintered dielectric part, and an upper electrode that are formed on one or more surfaces of the heat-resistant metal plate, a semiconductor chip fixed on the capacitor part, a wire for electrically connecting a lead frame to the semiconductor chip and the upper electrode, and a mold part in which at least the capacitor part and the semiconductor chip are buried. The semiconductor chip, the electrode, the metal plate, and the like are electrically connected with each other via first, second, and third wires.

Abstract: A semiconductor device includes a metal plate capacitor that includes a heat-resistant metal plate and a capacitor unit including a sintered dielectric formed on at least one surface of the heat-resistant metal plate, a semiconductor chip disposed on the metal plate capacitor, a connector configured to electrically connect the semiconductor chip and the metal plate capacitor, and a protector configured to protect the semiconductor chip, the metal plate capacitor, and the connector.

Abstract: Jitter that becomes a problem in a semiconductor part which performs high-speed signal processing is reduced. A semiconductor device includes a heat-resistant metal plate, a capacitor part having a lower electrode, a sintered dielectric part, and an upper electrode that are formed on one or more surfaces of the heat-resistant metal plate, a semiconductor chip fixed on the capacitor part, a wire for electrically connecting a lead frame to the semiconductor chip and the upper electrode, and a mold part in which at least the capacitor part and the semiconductor chip are buried. The semiconductor chip, the electrode, the metal plate, and the like are electrically connected with each other via first, second, and third wires.

Abstract: A resistance-formed substrate includes a first insulating layer, a first wiring formed on a first surface of the first insulating layer, a thin-film resistance layer formed on a second surface of the first insulating layer, and a first via-hole conductor. The first via-hole conductor penetrates through the first insulating layer, and is electrically connected to the first wiring and the thin-film resistance layer. The first via-hole conductor includes a metal part including a low-melting point metal and a high-melting point metal, and a paste resin part. The low-melting point metal includes tin and bismuth, and has a melting point of 300° C. or lower. The high-melting point metal includes at least one of copper and silver, and has a melting point of 900° C. or higher. The first via-hole conductor is in contact with the thin-film resistance layer at both the paste resin part and the metal part.

Abstract: A passive component incorporating interposer includes a double-sided circuit board (1) having a wiring layer (8) on both sides, a passive component (2) mounted on the wiring layer (8) on one surface of the double-sided circuit board (1), a second insulating layer (3) made of woven fabric or non-woven fabric or inorganic filler and thermosetting resin laminated on the surface of the double-sided circuit board (1) mounted with the passive component (2), a first insulating layer (4) made of woven fabric or non-woven fabric or inorganic filler and thermosetting resin laminated on the other surface of the double-sided circuit board (1) not mounted with the passive component (2), first and second wiring layers (5, 6) formed on the first and second insulating layers (3, 4), and a through hole (7) for electrically connecting the wiring layers (8) disposed on both surfaces of the double-sided circuit board (1) and the first and second wiring layers (5, 6), where the first wiring layer (5) is formed to enable mounting

Abstract: A transfer material capable of transferring a fine wiring pattern to a substrate reliably and easily. The transfer material includes at least three layers of a first metal layer as a carrier, a second metal layer that is transferred to the substrate as a wiring pattern, and a peel layer adhering the first and second metal layers releasably. On the surface portion of the first metal layer, a concave and convex portion corresponding to the wiring pattern is formed, and the peel layer and the second metal layer are formed on a region of the convex portions.

Abstract: A multilayered substrate includes a plurality of circuit boards including a plurality of wiring layers including a grounding layer and a power layer, a solid electrolytic capacitor having an insulative oxide film layer, an electrolytic layer, and a conductor layer sequentially formed on one surface or both surfaces of a foil-like metal substrate, and a conductive substance passing through the circuit board across a thickness thereof. The solid electrolytic capacitor is disposed to be held between the plurality of circuit boards. The conductor layer is connected to a grounding electrode formed on the grounding layer, the foil-like metal substrate being connected to a power electrode formed on the power layer.

Abstract: A passive component incorporating interposer includes a double-sided circuit board (1) having a wiring layer (8) on both sides, a passive component (2) mounted on the wiring layer (8) on one surface of the double-sided circuit board (1), a second insulating layer (3) made of woven fabric or non-woven fabric or inorganic filler and thermosetting resin laminated on the surface of the double-sided circuit board (1) mounted with the passive component (2), a first insulating layer (4) made of woven fabric or non-woven fabric or inorganic filler and thermosetting resin laminated on the other surface of the double-sided circuit board (1) not mounted with the passive component (2), first and second wiring layers (5, 6) formed on the first and second insulating layers (3, 4), and a through hole (7) for electrically connecting the wiring layers (8) disposed on both surfaces of the double-sided circuit board (1) and the first and second wiring layers (5, 6), where the first wiring layer (5) is formed to enable mounting

Abstract: The mounting board has a capacitor-forming sheet made from a valve metal, first and second board-forming structures, first and second electrodes, an extractor electrode, and a conductive polymer. The capacitor-forming sheet has an inner layer and a rough oxide film on at least one face of the inner layer. The first board-forming structure is provided on a face of the capacitor-forming sheet, and the second board-forming structure is provided on another face thereof on a side opposite to the first one. The first and second electrodes are isolated to each other and provided on a surface of at least one of the first and second board-forming structures. The extractor electrode and conductive polymer are provided inside at least one of the first and second board-forming structures. The extractor electrode electrically-connects the first electrode with the inner layer. The conductive polymer electrically-connects the second electrode with the rough oxide film.

Abstract: The mounting board has a capacitor-forming sheet made from a valve metal, first and second board-forming structures, first and second electrodes, an extractor electrode, and a conductive polymer. The capacitor-forming sheet has an inner layer and a rough oxide film on at least one face of the inner layer. The first board-forming structure is provided on a face of the capacitor-forming sheet, and the second board-forming structure is provided on another face thereof on a side opposite to the first one. The first and second electrodes are isolated to each other and provided on a surface of at least one of the first and second board-forming structures. The extractor electrode and conductive polymer are provided inside at least one of the first and second board-forming structures. The extractor electrode electrically-connects the first electrode with the inner layer. The conductive polymer electrically-connects the second electrode with the rough oxide film.

Abstract: An electronic component built-in module according to the present invention includes a pair of opposed circuit substrates, each of which includes a wiring pattern and an insulating base material containing a resin, an insulating layer that is placed between the pair of circuit substrates and contains an inorganic filler and a resin composition containing a thermosetting resin, an electronic component that is embedded in the insulating layer, and an inner via that is provided in the insulating layer so as to make an electrical connection between wiring patterns provided on different circuit substrates. A glass transition temperature Tg1 of the resin composition contained in the insulating layer and a glass transition temperature Tg2 of the insulating base material included in each of the circuit substrates satisfy a relationship Tg1>Tg2.

Abstract: A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.

Abstract: A circuit board with an built-in electronic component according to the present invention includes an insulating layer, a first wiring pattern provided on a first main surface of the insulating layer, a second wiring pattern provided on a second main surface different from the first main surface of the insulating layer, and an electronic component such as a semiconductor chip or the like provided in an internal portion of the insulating layer. The electronic component includes a first external connection terminal formed on a first surface and a second external connection terminal formed on a second surface different from the first surface. The first external connection terminal is connected electrically to the first wiring pattern, and the second external connection terminal is connected electrically to the second wiring pattern.

Abstract: A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.

Abstract: A multilayered substrate includes a plurality of circuit boards including a plurality of wiring layers including a grounding layer and a power layer, a solid electrolytic capacitor having an insulative oxide film layer, an electrolytic layer, and a conductor layer sequentially formed on one surface or both surfaces of a foil-like metal substrate, and a conductive substance passing through the circuit board across a thickness thereof. The solid electrolytic capacitor is disposed to be held between the plurality of circuit boards. The conductor layer is connected to a grounding electrode formed on the grounding layer, the foil-like metal substrate being connected to a power electrode formed on the power layer.

Abstract: A fabrication method for an optical transmission channel board includes a first step of forming on a substrate a layer containing an electrically conductive material, and a second step of patterning said layer containing an electrically conductive material formed on said substrate, and thereby forming circuit patterns at least a part of which is used as an electric circuit and at least a part of which positionally regulates an optical transmission channel.