Abstract: A surface acoustic wave device which occupies a small mounting area and has a low profile, yet having an improved reliability, and can be made available at low cost. The surface acoustic wave device comprises a piezoelectric substrate, a function region formed of comb-like electrodes for exciting surface acoustic wave provided on a main surface of the piezoelectric substrate, a space formation member covering the function region, a plurality of bump electrodes provided on a main surface of the piezoelectric substrate and a terminal electrode provided opposed to the main surface of piezoelectric substrate. The bump electrode and the terminal electrode are having a direct electrical connection, and a space between piezoelectric substrate and terminal electrode is filled with resin.

Abstract: A module with a built-in circuit component of the present invention includes an electric insulating layer, a pair of wiring layers provided on both principal planes of the electric insulating layer, a plurality of via conductors electrically connecting the pair of wiring layers and passing through the electric insulating layer in a thickness direction thereof, and a circuit component buried in the electric insulating layer, wherein the plurality of via conductors are disposed in a circumferential portion of the electric insulating layer in accordance with a predetermined rule. The plurality of via conductors are placed at an interval, for example, so as to form at least one straight line, in a cut surface of the electric insulating layer in a direction parallel to a principal plane thereof.

Abstract: An optical transmission board is provided. The optical transmission board includes an optical transmission channel, a retention board for retaining the optical transmission channel and circuit patterns. The circuit patterns are formed on the retention board and a part of the circuit patterns is used as an electric circuit. The optical transmission channel is positionally regulated by the part of the circuit patterns.

Abstract: A component built-in module including a core layer formed of an electric insulating material, and an electric insulating layer and a plurality of wiring patterns, which are formed on at least one surface of the core layer. The electric insulating material of the core layer is formed of a mixture including at least an inorganic filler and a thermosetting resin. At least one or more of active components and/or passive components are contained in an internal portion of the core layer. The core layer has a plurality of wiring patterns and a plurality of inner vias formed of a conductive resin. The electric insulating material formed of the mixture including at least an inorganic filler and a thermosetting resin of the core layer has a modulus of elasticity at room temperature in the range from 0.6 GPa to 10 GPa. Thus, it is possible to provide a thermal conductive component built-in module capable of filling the inorganic filler with high density; burying the active component such as a semiconductor etc.

Abstract: A double-sided or multilayer wiring board having high-density wiring is obtained by embedding a spherical semiconductor element in an electrically insulating substrate which composes the wiring board, and a thin electronic device can be provided using such a wiring board. Furthermore, a flexible double-sided or multilayer wiring board which is capable of being housed in a limited space while keeping a desired form can be provided by embedding the spherical semiconductor element, and a thin electronic device can be provided using a variety of such wiring boards by imparting different types of flexibility to desired parts of such a wiring board as required.

Abstract: A composite electronic component having a multi-layer wiring board, a first power terminal electrode, a second power terminal electrode, an external connection power supply terminal, a surface-mounted component, an insulator, and a power supply pattern. The first and the second power terminal electrodes are disposed on a first face of the multi-layer wiring board. The external connection power supply terminal is disposed on a second face opposite to the first face of the multi-layer wiring board and connected with the first power terminal electrode. The surface-mounted component is mounted on the first face of the multi-layer wiring board and connected with the first and the second power terminal electrodes at a first face thereof. The insulator covers at least a second face opposite to the first face of the surface-mounted component, the first power terminal electrode, and the second power terminal electrode with a first face thereof.

Abstract: A circuit component built-in module includes the following: an electrical insulating substrate made of a first mixture including a filler and a thermosetting resin; a wiring pattern formed on at least a principal surface of the electrical insulating substrate; circuit components that are arranged inside the electrical insulating substrate and connected electrically to the wiring pattern; and vias for electrically connecting the wiring patterns. At least one of the circuit components is mounted using wires. Part or all of the wires is sealed with a second mixture including a filler and a resin. This circuit component built-in module can eliminate a wire failure or short circuit while using a low cost mounting technique such as wire bonding.

Abstract: A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.

Abstract: In a module with a built-in semiconductor, higher densification is achieved by disposing inner vias close to a semiconductor device. A module which has a space (107) between a first wiring layer (102a) and a built-in semiconductor device (105). The module is obtained by: mounting the semiconductor device (105) on a first wiring layer (102a) of a wiring board (103) without using a sealing resin; stacking on the circuit board an electrically insulating substrate having a through bore (inner via) (104) filled with a conductive paste and an opening for receiving the semiconductor device, and a mold release carrier having a second wiring layer (102b) in the stated order; and heating and pressurizing so that the semiconductor device (105) is incorporated in a core layer (101) which is formed by curing the electrically insulating substrate.

Abstract: A mount assembly which amplifies a light signal from an optical transmission line and transmits the light signal to another optical transmission line and does not require a highly precise perpendicularity at a connection portion between the optical transmission line and the mount assembly. The mount assembly (100) is obtained by connecting a photo-electro conversion device (10a), spherical semiconductor devices (12a) and (12b) and an electro-photo conversion device (10b) through electrical-connection portions (14) so that a light received by the photo-electro conversion device (10a) is amplified by the spherical semiconductor devices (12a) and (12b) and then emitted from the electro-photo conversion device (10b).

Abstract: A method for manufacturing an electric element built-in module including flip-chip mounting at least one electric element such as a semiconductor chip or a surface acoustic wave device on a wiring pattern, sealing the electric element with a thermosetting resin composition, and grinding or abrading the thermosetting resin composition and electric element from a side of the electric element opposite that of the wiring pattern. The method provides upper surfaces of the electric element and the thermosetting resin composition that are substantially flush with each other. The method provides an electric element built-in module suitable for high-density packaging with a reduced thickness without damaging the electric element and while maintaining mechanical strength.

Abstract: A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.

Abstract: A circuit board with an built-in electronic component according to the present invention includes an insulating layer, a first wiring pattern provided on a first main surface of the insulating layer, a second wiring pattern provided on a second main surface different from the first main surface of the insulating layer, and an electronic component such as a semiconductor chip or the like provided in an internal portion of the insulating layer. The electronic component includes a first external connection terminal formed on a first surface and a second external connection terminal formed on a second surface different from the first surface. The first external connection terminal is connected electrically to the first wiring pattern and the second external connection terminal is connected electrically to the second wiring pattern.

Abstract: A composite electronic component having a multi-layer wiring board, a first power terminal electrode, a second power terminal electrode, an external connection power supply terminal, a surface-mounted component, an insulator, and a power supply pattern. The first and the second power terminal electrodes are disposed on a first face of the multi-layer wiring board. The external connection power supply terminal is disposed on a second face opposite to the first face of the multi-layer wiring board and connected with the first power terminal electrode. The surface-mounted component is mounted on the first face of the multi-layer wiring board and connected with the first and the second power terminal electrodes at a first face thereof. The insulator covers at least a second face opposite to the first face of the surface-mounted component, the first power terminal electrode, and the second power terminal electrode with a first face thereof.

Abstract: A circuit board with an built-in electronic component according to the present invention includes an insulating layer, a first wiring pattern provided on a first main surface of the insulating layer, a second wiring pattern provided on a second main surface different from the first main surface of the insulating layer, and an electronic component such as a semiconductor chip or the like provided in an internal portion of the insulating layer. The electronic component includes a first external connection terminal formed on a first surface and a second external connection terminal formed on a second surface different from the first surface. The first external connection terminal is connected electrically to the first wiring pattern, and the second external connection terminal is connected electrically to the second wiring pattern.

Abstract: A semiconductor built-in millimeter-wave band module includes: an insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate made of a dielectric material having thermal conductivity higher than the insulating substrate and laminated on one surface of the insulating substrate; a plurality of wiring patterns formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device operating at millimeter-wave band, which is arranged inside of the insulating substrate, is packaged on the high thermal conductivity substrate in a face-up manner, and is connected electrically with the wiring patterns; and a distributed constant circuit element and an active element provided on the semiconductor device. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element.

Abstract: A transfer sheet of the present invention includes a resin film having a glass transition temperature of not lower than 60° C., a silicone resin layer formed on the resin film, and a metal wiring pattern formed on the silicone resin layer. The metal wiring pattern has an exposed face that forms a roughened face, and the roughened face has a ten-point average surface roughness (Rz) of 2 ?m or more, while a face of the wiring pattern, which is in contact with the silicone resin layer, has a surface roughness (Rz) lower than that of the exposed face. Thereby, the present invention provides a transfer sheet that has improved transfer performance for enabling transferring at low temperature, and improved dimensional stability and also a via-connection reliability. The present invention provides also a wiring board using the transfer sheet and a method of manufacturing the same.

Abstract: A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 ?m and not more than 100 ?m, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 ?m and not more than 200 ?m.

Abstract: A capacitor-mounted metal foil of the present invention is provided with a metal foil and a plurality of capacitors formed on the metal foil. Each of the capacitors includes a conductive layer disposed above the metal foil, and a dielectric layer disposed between the metal foil and the conductive layer.

Abstract: A transfer sheet of the present invention includes a resin film having a glass transition temperature of not lower than 60° C., a silicone resin layer formed on the resin film, and a metal wiring pattern formed on the silicone resin layer. The metal wiring pattern has an exposed face that forms a roughened face, and the roughened face has a ten-point average surface roughness (Rz) of 2 ?m or more, while a face of the wiring pattern, which is in contact with the silicone resin layer, has a surface roughness (Rz) lower than that of the exposed face. Thereby, the present invention provides a transfer sheet that has improved transfer performance for enabling transferring at low temperature, and improved dimensional stability and also a via-connection reliability. The present invention provides also a wiring board using the transfer sheet and a method of manufacturing the same.